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    UN8231 Search Results

    UN8231 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UN8231 Panasonic NPN Transistor with built-in Resistor Original PDF
    UN8231 Panasonic Silicon NPN epitaxial planer transistor Original PDF
    UN8231 Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    UN8231 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    UN8231A Panasonic Silicon NPN Transistor with integrated resistor Original PDF
    UN8231A Panasonic Silicon NPN epitaxial planer transistor Original PDF
    UN8231A Unknown The Transistor Manual (Japanese) 1993 Scan PDF
    UN8231A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF

    UN8231 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    UNR8231

    Abstract: UNR8231A
    Text: Transistors with built-in Resistor UNR8231/8231A UN8231/8231A Silicon NPN epitaxial planar type Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) M Di ain sc te on na tin nc ue e/ d (1.0) (0.2) 4.5±0.1 0.7 • Features 0.65 max. 14.5±0.5 (1.0) ue pl d in an c se ed lud


    Original     		UNR8231/8231A UN8231/8231A) UNR8231 UNR8231A PDF

    UNR8231

    Abstract: UNR8231A
    Text: Transistors with built-in Resistor UNR8231/8231A UN8231/8231A Silicon NPN epitaxial planar type Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 0.7 • Features 0.65 max. 14.5±0.5 (1.0) • High forward current transfer ratio hFE • Resistor built-in type, allowing downsizing of the equipment


    Original     		UNR8231/8231A UN8231/8231A) UNR8231 UNR8231A UNR8231 UNR8231A PDF

    UNR8231

    Abstract: UNR8231A
    Text: Transistors with built-in Resistor UNR8231/UNR8231A UN8231/UN8231A Silicon NPN epitaxial planer transistor Unit: mm 0.7 • Absolute Maximum Ratings Parameter Collector to base voltage (Ta=25˚C) Symbol UNR8231 UNR8231A UNR8231 Collector to emitter voltage UNR8231A


    Original     		UNR8231/UNR8231A UN8231/UN8231A) UNR8231 UNR8231A UNR8231 UNR8231A PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors with built-in Resistor UNR8231/8231A UN8231/8231A Silicon NPN epitaxial planar type Unit: mm 6.9±0.1 4.0 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 0.7 • Features 0.65 max. 14.5±0.5 (1.0) M Di ain sc te on na tin nc ue e/ d • High forward current transfer ratio hFE


    Original     		UNR8231/8231A UN8231/8231A) UNR8231 UNR8231A UNR8231A PDF

    UN823

    Abstract: UN8231 UN8231A
    Text: Transistors with built-in Resistor UN8231/UN8231A Silicon NPN epitaxial planer transistor Unit: mm 1.05 2.5±0.1 ±0.05 6.9±0.1 0.7 4.0 0.8 ● 0.65 max. 14.5±0.5 High forward current transfer ratio hFE. Resistor built-in type, allowing downsizing of the equipment and


    Original     		UN8231/UN8231A UN8231 UN8231A UN823 UN8231 UN8231A PDF

    UNR8231

    Abstract: UNR8231A
    Text: Transistors with built-in Resistor UNR8231/UNR8231A UN8231/UN8231A Silicon NPN epitaxial planer transistor Unit: mm 1.05 2.5±0.1 ±0.05 6.9±0.1 0.7 4.0 0.8 ● 0.65 max. 14.5±0.5 High forward current transfer ratio hFE. Resistor built-in type, allowing downsizing of the equipment and


    Original     		UNR8231/UNR8231A UN8231/UN8231A) UNR8231 UNR8231A UNR8231 UNR8231A PDF

    YTS2222A

    Abstract: YTS3904 YTS3905 YTS2222 YTS3903 UN9217 YTS4125 YTS2221 YTS2221A YTS2907
    Text: - 348 - Ta=25tC, *EP(àTc=25‘ C ft £ ffl UN8231A ÍÜT Digital UN9110 töT & VcBO VcEO Ic(DC) Pc Pc* (V) (V) (A) <W) (W) m ICBO (max) (/¿A) VcB (V) % (min) w & (max) tí VCE (V) (Ta=25‘ C) Ic / I e (A) [*EPÍátypfiSJ (max) (V) (V) le (A) Ib (A) 60


    OCR Scan     		UN8231A UN9110 UN9111 UN9113 UN9114 003ax SC-59) YTS2222A YTS2221 SC-59 YTS2222A YTS3904 YTS3905 YTS2222 YTS3903 UN9217 YTS4125 YTS2221 YTS2221A YTS2907 PDF

    UN7000

    Abstract: UN8000 UN9110 UNR921CJ UN1219 un4115 un1211
    Text: Pakage No. Rb Ik Q ) Rst <kO) New S Type(D34) S-Mini Type(D5) M Type{D35) Mini Type(D12) (Pc =400m W , 600mW M 1W '2) (Pc = 200mW) (Pc=300m W ) (Pc — 150mW) PNP PNP NPN PNP MT1 Type(D37) (Pc =400m W , 600mW*1 ) Mini-Power MT2 Type(D38) (P c= 1W ) (Pc=125m W )


    OCR Scan     		UN1000 600mW UN2000 200mW) N2111 UN2112 UN2113 UN2114 UN2115 UN2116 UN7000 UN8000 UN9110 UNR921CJ UN1219 un4115 un1211 PDF

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan     		MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202 PDF

    1k MT

    Abstract: ml5212 UN6211 schematic diagram washing machines UN5217 UN5218 UN5219 UN6110 IM6114 UN6113
    Text: - 34 6 - Ta=25'C (Ta=25£C, *Ep(ÌTc=25<C) m UN5216 UN5217 UN5218 UN5219 UN6110 UN6111 UN 6112 UN6113 UN 6114 UN6115 UN6116 UN6117 UN6118 UN 6119 IINB121 UN6122 UN6123 UN6124 UN6210 UN 6211 ITMC01 0 UN6213 UN6214 UN6215 UN6216 UN6217 UN6218 UN6219 UN6221


    OCR Scan     		N5216 UN5217 UN5218 UN5219 UN6110 UN6214 UN6215 UN6216 UN6217 51K/5 1k MT ml5212 UN6211 schematic diagram washing machines IM6114 UN6113 PDF

    equivalent transistor n 4212

    Abstract: N 4212 N4212 N111F N621D un4115 un1211 un4211 equivalent
    Text: Series N am e Pakage No. R esistance value Rbe Rb ik O ) <kQ) UN1000 Series UN2000 Series U N 2000T Series UN4000 Series UN5Û00 Series UN6000 Series UN7000 Series UN8000 Series U N9000 Series M T 2 T y p e (D 3 8 ) SS Mini Type (D1) (P c = 1 W ) (P c = 1 2 5 m W )


    OCR Scan     		UN1000 600mW UN1111 UN1112 UN1113 UN1114 UN1115 UN1116 UN1117 UN1118 equivalent transistor n 4212 N 4212 N4212 N111F N621D un4115 un1211 un4211 equivalent PDF