UN1113
Abstract: XP4113
Text: Composite Transistors XP4113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UN1113 x 2 elements • Absolute Maximum Ratings Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage
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XP4113
UN1113
UN1113
XP4113
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UN1113
Abstract: UNR1113 XN01113 XN1113
Text: Composite Transistors XN01113 XN1113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UNR1113(UN1113) x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN01113
XN1113)
UNR1113
UN1113)
UN1113
XN01113
XN1113
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UN1113
Abstract: UNR1113 XP04113 XP4113
Text: Composite Transistors XP04113 XP4113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 UNR1113(UN1113) x 2 elements • Absolute Maximum Ratings (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage
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XP04113
XP4113)
UNR1113
UN1113)
UN1113
XP04113
XP4113
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XP01113
Abstract: XP1113 UN1113 UNR1113
Text: Composite Transistors XP01113 XP1113 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UNR1113(UN1113) x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element
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XP01113
XP1113)
UNR1113
UN1113)
XP01113
XP1113
UN1113
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UN1113
Abstract: UNR1113 XP06113 XP6113
Text: Composite Transistors XP06113 XP6113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UNR1113(UN1113) x 2 elements • Absolute Maximum Ratings 0 to 0.1 ● 0.12 –0.02 ■ Basic Part Number of Element 0.7±0.1
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XP06113
XP6113)
UNR1113
UN1113)
UN1113
XP06113
XP6113
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XN4313
Abstract: No abstract text available
Text: Composite Transistors XN04313 XN4313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 0.50+0.10 –0.05 • UNR1213 (UN1213) + UNR1113 (UN1113) Tr1 1.1+0.2
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XN04313
XN4313)
UNR1213
UN1213)
UNR1113
UN1113)
SC-74
XN4313
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UN1113
Abstract: XP1113
Text: Composite Transistors XP1113 Silicon PNP epitaxial planer transistor Unit: mm 0.2±0.05 For switching/digital circuits 2.1±0.1 1 2 1.25±0.1 0.425 5 3 4 +0.05 0.9± 0.1 UN1113 x 2 elements 0 to 0.1 ● 0.7±0.1 • Basic Part Number of Element 0.12 – 0.02
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XP1113
UN1113
UN1113
XP1113
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UN1113
Abstract: XP6113
Text: Composite Transistors XP6113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits 1 6 2 5 3 4 +0.05 UN1113 x 2 elements 0 to 0.1 ● 0.12 –0.02 • Basic Part Number of Element 0.7±0.1 0.9±0.1 0.2 ● Two elements incorporated into one package.
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XP6113
UN1113
UN1113
XP6113
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UN1113
Abstract: XN1113
Text: Composite Transistors XN1113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 -0.3 +0.25 0.65±0.15 1.45±0.1 3 0.65±0.15 1 2 0 to 0.1 UN1113 x 2 elements +0.1 +0.2 1.1 -0.1 ● 0.8 • Basic Part Number of Element
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XN1113
UN1113
UN1113
XN1113
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Untitled
Abstract: No abstract text available
Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm 2.5±0.1 (1.0) R 0.9 M Di ain sc te on na tin nc ue e/ d • Costs can be reduced through downsizing of the equipment and reduction of the number of parts
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UNR111x
UN111x
UNR1110
UNR1111
UNR1112
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XP04313 XP04313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) 0.2±0.05 5 0.12+0.05 –0.02 4 1.25±0.10 2.1±0.1 • Features 5˚ • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half
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XP04313
XP04313)
UNR1213
UN1213)
UNR1113
UN1113)
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UN1113
Abstract: XN4113
Text: Composite Transistors XN4113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 +0.1 +0.1 0 to 0.05 0.4±0.2 Ta=25˚C Parameter Symbol Ratings Unit Collector to base voltage Rating Collector to emitter voltage
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XN4113
UN1113
XN4113
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UN1114
Abstract: 1117 S Transistor UN1110 UN1111 UN1112 UN1113 UN1115 UN1116 UN1117 UN1118
Text: Transistors with built-in Resistor / 111D/111E/111F/111H/111L Silicon PNP epitaxial planer transistor Unit: mm For digital circuits 6.9±0.1 2.5±0.1 1.5 1.0 0.4 ● ● ● ● ● ● ● ● ● ● ●
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111D/111E/111F/111H/111L
UN1111
UN1112
UN1113
UN1114
UN1115
UN1116
UN1117
UN1118
UN1119
UN1114
1117 S Transistor
UN1110
UN1111
UN1112
UN1113
UN1115
UN1116
UN1117
UN1118
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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XN4313
Abstract: UN1113 UN1213 UNR1113 UNR1213 XN04313
Text: Composite Transistors XN04313 XN4313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) M Di ain sc te on na tin nc ue e/ d For switching/digital circuit 5 6 3 2 • Basic Part Number of Element
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XN04313
XN4313)
UNR1213
UN1213)
UNR1113
UN1113)
SC-74
XN4313
UN1113
UN1213
UNR1113
UNR1213
XN04313
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UNR1110
Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Text: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ
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UNR111x
UN111x
UN1110)
UN1111)
UN1112)
UN1113)
UN1114)
UN1115)
UN1116)
UN1117)
UNR1110
UNR1111
UNR1112
UNR1113
UNR1114
UNR1115
UNR1116
UNR1117
UNR1118
UNR1119
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UN1113
Abstract: UNR1113 XN04113 XN4113
Text: Composite Transistors XN04113 XN4113 Silicon PNP epitaxial planer transistor Unit: mm For switching/digital circuits +0.2 2.8 –0.3 +0.25 • Absolute Maximum Ratings +0.1 +0.1 0 to 0.05 0.4±0.2 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage
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XN04113
XN4113)
UN1113
UNR1113
XN04113
XN4113
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Untitled
Abstract: No abstract text available
Text: Composite Transistors XN04313 XN4313 Silicon NPN epitaxial planar transistor (Tr1) Silicon PNP epitaxial planar transistor (Tr2) Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) • Features 5 6 3 2 0.30+0.10 –0.05 ■ Basic Part Number of Element 0.50+0.10
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XN04313
XN4313)
UNR1213
UN1213)
UNR1113
UN1113)
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UN1113
Abstract: UNR1113 XP04113 XP4113
Text: Composite Transistors XP04113 XP4113 Silicon PNP epitaxial planer transistor 0.2±0.05 5 6 ● 0.12+0.05 –0.02 4 5° Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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XP04113
XP4113)
UNR1113
UN1113)
UN1113
XP04113
XP4113
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UN1113
Abstract: UNR1113 XP06113 XP6113
Text: Composite Transistors XP06113 XP6113 Silicon PNP epitaxial planer transistor 0.2±0.05 5 6 ● 4 Features 0.2±0.1 Two elements incorporated into one package. (Transistors with built-in resistor) Reduction of the mounting area and assembly cost by one half.
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XP06113
XP6113)
UNR1113
UN1113)
UN1113
XP06113
XP6113
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transistor a2160
Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Text: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124
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OCR Scan
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N12861
N13801
MN1381
N13811
N13821
N150402
15P0802
N150412
MN15151
MN152121
transistor a2160
transistor A1270
A1270 transistor
transistor 2sD 4515
1431T transistor
transistor A769
mini circuits 15542
A1270 Y
AN 5606K
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3866S
Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Text: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series
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OCR Scan
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1020G
N12861
N12B62
MN1381
MN13811
MN13821
15P0802
15P5402
58851A
70803A
3866S
transistor a999
bs 7818 -1995
transistor tt 2206
A999 transistor
TT 2206 transistor
a1535A
8340UAS
transistor 3866S
2SD 4515
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UN1219
Abstract: 12Z2 UN1110 UN1111 UN1113 UN1115 UN921E UN921F UN921K UN921L
Text: - 340 - T a = 2 5 t ,*EP[äTc=25T; m s ft £ VcBO VcEO lc(DC) (V) (V) (A) Pc Pei CW) m 5 ICBO (max) ( UA) S (min) W ^ (max) tt Vc e (V) (Ta=25°C) Ic / I e (A) [*£P(ätypffi] (max) (V) (V) le (A) Ib (A) UN921E föT Digital 50 50 0. 1 0.125 0 .1 50 60 10
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UN921E
UN921F
UN921K
UN921L
UN1110
UN1111
UN1213
10K/47K
UNI114
UN1214
UN1219
12Z2
UN1113
UN1115
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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