Untitled
Abstract: No abstract text available
Text: ESAB33 CS (5A) F FAST RECOVERY DIODE ' Features Soft recovery, low noise. High reliability $7E Connection Diagram I Applications • M & U t f Z 'f y T 's y H igh speed pow er sw itchin g. M axim um Ratings and Characteristics : A bsolute M axim um Ratings
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ESAB33
l95t/R89
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h0263
Abstract: ESAB85-009 P151 T460 T930
Text: ESAB85-009I5A SCHOTTKY BARRIER DIODE •4tH!: : Features '1&VF Low V f S uper high speed sw itch in g . Connection Diagram H igh reliability by planer design *. A pplications H igh speed pow er sw itch in g . M axim um Ratings and C haracteristics • « * * * * £ * : A bsolute M axim um Ratings
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ESAB85-009
O-220AB
SC-46
500ns,
095t/R89
Shl50
h0263
P151
T460
T930
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Untitled
Abstract: No abstract text available
Text: TP802C0400A -4 K SCHOTTKY BARRIER DIODE Features • te V F Low VF Super high speed sw itch in g . • w a f t «14 Connection Diagram High reliability by planer design ' Applications High speed p ow er sw itchin g. M axim um Ratings and Characteristics : A bsolute M axim um Ratings
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TP802C0400A)
500ns
E3TS30S3^
95t/R89
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ENS150-11A
Abstract: 200ih1u JIS-C-0806 ENS060-13 ENS070-13 ENS080-15 ENS120-15 ENS240-13 tb1208c
Text: ENS080-15 v IJ □ v t - y 7 7 ' y *. Outline Drawings - / < SILICON SURGE ABSORBERS as 01 02 tm 'T -X JüttimrO : M axim um Ratings and Characteristics : A bsolute M axim um Ratings Item Maximum O ff-S ta te Voltage C ritical Rate of Rise of Maximum O ff-S ta te Voltage
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ENS080-15
ENS150-11A
200ih1u
JIS-C-0806
ENS060-13
ENS070-13
ENS080-15
ENS120-15
ENS240-13
tb1208c
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68000 MC68681 PROGRAMMING EXAMPLE
Abstract: mcr 5102 PMX 820 M68000 M68300 MC68340 MC68341 motorola 68000 manual UM 9515 motorola 68000
Text: 10/31/95 SECTION 1: OVERVIEW UM Rev 1 TABLE OF CONTENTS Paragraph Number Title Page Number Section 1 Device Overview 1.1 Section 2 Signal Descriptions
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A23-A0)
A31-A24)
MC68341
68000 MC68681 PROGRAMMING EXAMPLE
mcr 5102
PMX 820
M68000
M68300
MC68340
motorola 68000 manual
UM 9515
motorola 68000
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Untitled
Abstract: No abstract text available
Text: A - * - " MODEL SERIES 5 1 0 0 7 /8 " Diam eter Single Turn W irew ound Precision Potentiometer MODEL STYLES 5101 1/8" Shaft, 3/8" Bushing 5103 1/8" Shaft, Servo ELECTRICAL Resistance Range, Ohms 200 to 15K Standard Resistance Tolerance ±5% M inim um Practical Resistance Tolerance
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133bblQ
133bblD
0D03334
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electrolytic ELITE
Abstract: electrolytic ELITE ed elite series pz ELITE EB series 50A5 3300 XL 3300 uF 450V 1360 uF 450V 22 J.63 capacitor JIS-C-5101-4
Text: O No. I O O / \ ' 7 I K 1 Products G uide 7 ,r ; P age 1. C ap acitor S eries Table - 2 2. Precautions in Using Alum inum Electrolytic C apacitors - 4 3. Part N um bering System
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sh163b
electrolytic ELITE
electrolytic ELITE ed
elite series pz
ELITE EB series
50A5
3300 XL
3300 uF 450V
1360 uF 450V
22 J.63 capacitor
JIS-C-5101-4
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diode js7
Abstract: Transistor B123 Transistor DF- RO DF RV transistor transistor sit R/smd diode js7 tr/4114R-003-R1/diode js7
Text: 2 DI300A-050 300A POWER TRANSISTOR MODULE High Current 1hFE v*' High DC Current.Gain Insulated Type : Applications 'v ^ - W • High Power Switching Uninterruptible Power Supply ►AC * - 9 MW AC Motor Controls W elding Machines M axim um R atings and Characteristics
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E82988
diode js7
Transistor B123
Transistor DF- RO
DF RV transistor
transistor sit
R/smd diode js7
tr/4114R-003-R1/diode js7
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Untitled
Abstract: No abstract text available
Text: ERC20M 5A t a n t u m — K FAST RECOVERY DIODE Features Insulated package by fully m o ld in g . High voltage by mesa design. • ¡ftifs fitt Connection Diagram High reliability : Applications High speed switching. M axim um Ratings and Characteristics
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ERC20M
l95t/R89
Shl50
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DIODE S4 5AA
Abstract: 5962-8971001XX S7B SMD TR plji S4 5AA S78 SMD ADG526A ADG527A DG526 DG527
Text: ANALOG DEVICES □ CMOS Latched 8/16 Channel Analog Multiplexers FEATURES 44V Supply M axim um Rating Vss to Voo Analog Signal Range Single/Dual Supply Specifications W ide Supply Ranges 10.8V to 16.5V Microprocessor Compatible (100ns WR Pulse) Extended Plastic Tem perature Range
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ADG526A/ADG527A
100ns
DG526
DG527
ADG526A
ADG527A
DIODE S4 5AA
5962-8971001XX
S7B SMD TR
plji
S4 5AA
S78 SMD
DG527
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ERG75
Abstract: T151 T760 T810 A23G
Text: ERG75 45A : Outline Drawings FAST RECOVERY DIODE Features • t — Pl aner chip • Soft recovery type • Stud mounted : Applications • Switching power supplies • 'f-av't— Free-wheel diode • Others. M axim um Ratings and Characteristics '• Absolute Maximum Ratings
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ERG75
ERG75
eBTB30Â
EaT05
I95t/R89)
T151
T760
T810
A23G
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Untitled
Abstract: No abstract text available
Text: E R 6 2 - 0 0 4 io a C SCHOTTKY BARRIER DIODE * Features • &vF Low VF Super high speed switching. • 7 i Connection Diagram High reliability by planer design, : Applications High speed power switching. : M axim um Ratings and Characteristics : Absolute Maximum Ratings
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I95t/R89)
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557 timer connections
Abstract: M68000 MC68340 MC68681
Text: 11/2/95 SECTION 1: OVERVIEW UM Rev 1 TABLE OF CONTENTS Paragraph Number Page Number Title Section 1 Device Overview 1.1 1.1.1 1.1.2 1.2 1.2.1 1.2.2 1.3 1.3.1 1.3.1.1 1.3.1.2 1.3.1.3 1.3.1.4 1.3.1.5 1.3.1.6 1.3.1.7 1.3.2 1.3.3 1.3.4 1.4 1.5 1.6 1.7 M68300 Family. 1-2
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M68SGG
MC68340
557 timer connections
M68000
MC68681
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mcr 5102
Abstract: M68000 M68300 MC68349 MC68681 pipeline synchronization 8332 memory
Text: 11/3/95 SECTION 1: OVERVIEW UM Rev 1 TABLE OF CONTENTS Paragraph Number Title Page Number Section 1 Overview 1.1 1.2 1.2.1 1.2.2 1.3 1.3.1 1.3.2 1.3.3 1.4 1.4.1 1.4.2 1.4.3 1.4.3.1 1.4.3.2 1.4.3.3 1.4.3.4 1.4.3.5 1.4.3.6 1.4.3.7 1.5 1.6 1.6.1 1.6.2 1.7 Features. 1-2
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M68300
CPU030
CPU32+
MC68349
mcr 5102
M68000
MC68681
pipeline synchronization
8332 memory
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esad92-02
Abstract: AT8N
Text: ESAD92-02 20 a H’Hß'+äs : Outline Drawings LOW LOSS SUPER HIGH SPEED RECTIFIER Features • i£V r Low V f Super high speed switching. • -?\s—r- Connection Diagram High reliability by planer design. : Applications High speed power switching. M axim um Ratings and Characteristics
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ESAD92-02
t95t/R89
Shl50
AT8N
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Untitled
Abstract: No abstract text available
Text: SILICON PIN DIODE MMBV3401LT1* . designed primarily for VHF band switching applications but also suitable for use in general-purpose switching circuits. Supplied in a Surface M ount package. CASE 318-07, STYLE 8 SOT-23 TO-236AB • Rugged PIN Structure Coupled with W irebond Construction for Optim um
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MMBV3401LT1*
OT-23
O-236AB)
MMBV3401LT1
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ESAB92-02
Abstract: A-221 T151 T460 T760
Text: ESAB92-02 5 a LOW LOSS SUPER HIGH SPEED RECTIFIER I Features • ItV F Low VF IW tttt C onnection Diagram Super high speed switching. • T V -* High reliability by planer design • E I& ! : A pplica tions High speed power switching. M axim um Ratings and C haracteristics
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ESAB92-02
O-22QAB
SC-46
ETS30S3^
I95t/R89)
A-221
T151
T460
T760
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ERD36M
Abstract: No abstract text available
Text: ERD36M 4A FA S T RECOVERY DIODE • ifrHi : Features Insulated package by fully molding Super high speed switching Low V F in turn on ■ M ttttto tfJM Connection Diagram High reliability ■ Æ iÉ : Applications • sax-f High speed switching. M axim um Ratings and Characteristics
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ERD36M
l95t/R89
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ESAD83-004
Abstract: LT460
Text: ESAD83-004 30 a g ± 'jv m * * y 5 j— K SCHOTTKY BARRIER DIODE : Features Low VF S uper high speed s w itc h in g . Connection Diagram High reliability by planer d esign. : Applications High speed pow er sw itch in g . M axim um Ratings and Characteristics
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ESAD83-004
500ns
LT460
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Untitled
Abstract: No abstract text available
Text: M O T O R O L A SC -CXSTRS/R F> 1 6367254 MOTOROLA SC DE|b3ti7254 XSTRS/R 96D 8 2 4 7 5 _ T ~ F □DÔ247T S | D ^ ? - 2 - 7 MAXIM UM RATINGS Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage
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b3ti7254
7007AB
MD7007F
MQ7007
D7007AB
MD7007
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LT9E
Abstract: No abstract text available
Text: E R D 75 2 oa "f K : O utline D raw ings FAST RECOVERY DIODE • 4$ ^ : Features • Planer chip • V 7 Y l) 1 i ' il) — Soft recovery type • Stud mounted : Applications • Switching power supplies • Free-wheel diode • Others. M axim um Ratings and Characteristics
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50HzjE
ii3Tg5fi35^
I95t/R89)
LT9E
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b35 DIODE schottky
Abstract: ERG81-004 ERG81A-004 ERG81 T151 T460 T930 ERG8VERG81
Text: • : Outline Drawings SCHOTTKY BARRIER DIODE : Features • Low fo rw a rd voltage d rop V FM Fast recovery tim e • X^*yKJf£ Stud m ounted ! Applications • S w itching pow er supplies Prevention to contrary connection • Others. ■ £ 4 K : 4 t t t : M axim um Ratings and Characteristics
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ERG8VERG81
ERG81-004,
ERG81A-004
50HzIESÂ
I95t/R89)
b35 DIODE schottky
ERG81-004
ERG81A-004
ERG81
T151
T460
T930
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ENS150-11A
Abstract: No abstract text available
Text: ENS150-11A ' > \ u > - y - - i ¿ > y ^ ± S S A : Outline Drawings y *v - ' < SILICON SURGE ABSORBERS 8S » m 01 *r-* x,n $• > «» *) D2 sB(s¡s(íA,Ktea) P 7 I* 7.6± 0.3 ■ L 1.6d:0.3 ' 'J l: 1.6±0.3 u □ m ¿±0.1 '• Maxim um Ratings and Characteristics
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ENS150-11A
I95t/R89)
ENS150-11A
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A509
Abstract: PA886C02 SC-65 T151 T930 l4pf
Text: PA 886C 02 3 oa SCHOTTKY BARRIER DIODE ’ Features • ifc V F Low Vf • UiSV' Super high speed sw itching. • TV- *- ¿ t f t f l MKt t C onnection Diagram H igh reliability by planer design, I A pplications H igh speed pow er sw itching. ! M axim um Ratings and C haracteristics
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95t/R
A509
PA886C02
SC-65
T151
T930
l4pf
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