BAT54WX
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# BAT54WX Features • • Extremely-Fast Switching Speed Low Forward Voltage Drop 200mWatt, 30Volt Schottky Diodes Maxim um Ratings Symbol
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BAT54WX
200mWatt,
30Volt
OD-523
100mA
BAT54WX
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# BAT54WX Features • • Extremely-Fast Switching Speed Low Forward Voltage Drop 200mWatt, 30Volt Schottky Diodes
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BAT54WX
200mWatt,
30Volt
OD-523
100mA
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Untitled
Abstract: No abstract text available
Text: 3 87 5081 G E SOLID 01E STATE Optoelectronic Specifications_ 19816 - HARRIS SEMICOND SECTOR 37E D I D T- '//: / / •43GE571 0027270 T ■ HAS Infrared Emitter CQX14, CQX15, CQX16, CQX17 G alliu m Arsenide In fra re d -E m ittin g Diode
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43GE571
CQX14,
CQX15,
CQX16,
CQX17
92CS-42662
92CS-429S1
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ixys ml 075
Abstract: 50N60A
Text: OIXYS HiPerFAST IGBT with Diode IXGX50N60AU1 IXGX50N60AU1S = 600 V = 75 A = 2.7 V = 275 ns 'C E S IC 25 VCE sat fi Preliminary data S ym bol Test C onditions V* CES T j = 2 5 « C to 1 5 0 ° C 600 V V CGR T j = 25°C to 150°C; RGE = 1 M£2 600 V v GES
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IXGX50N60AU1
IXGX50N60AU1S
50N60AU1
ixys ml 075
50N60A
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D 819
Abstract: No abstract text available
Text: □1XYS Preliminary Data Low VCE sat IGBT with Diode High Speed IGBT with Diode Combi Pack V CES IXGH 12N100U1 IXGH 12N100AU1 ^C25 V CE(sat) 1000 V 24 A 3.5 V 1000 V 24 A 4.0 V TO-247 SMD (Note 1) Symbol Test C onditions V CES Tj = 25°C to 150°C 1000 V
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12N100U1
12N100AU1
24SBSC
T0-247
D 819
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Untitled
Abstract: No abstract text available
Text: 3875081 G E SO LID 0 1E STATE D 19656 Optoelectronic Specifications_ H A RR IS S E M I C O N D S E C T O R T 37E D B 4 3 02 27 1 0027116 1 -4 I- I HAS Infrared Emitter LED55B, LED55C, LED56, LED55BF, LED55CF, LED56F " Gallium Arsenide Infrared-Emitting Diode
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LED55B,
LED55C,
LED56,
LED55BF,
LED55CF,
LED56F
LED55B-LED55C-LED56
LED55C
LED56
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Untitled
Abstract: No abstract text available
Text: ZENER DIODES 1W Part# 1N4158B 1N4159B 1N4160B 1N4161B 1N4162B 1N4163B 1N4164B 1N4165B 1N4166B 1N4167B 1N4168B 1N4169B 1N4170B 1N4171B 1N4172B 1N4173B 1N4174B 1N4175B 1N4176B 1N4400B 1N4401B 1N4402B 11'd4403 B 1N4404B 1N4405B 1N4406B 1N4407B 1N4408B 1N4409B
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1N4158B
1N4159B
1N4160B
1N4161B
1N4162B
1N4163B
1N4164B
1N4165B
1N4166B
1N4167B
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1N416B
Abstract: 1N4162B 1N4158B 1N4159B 1N4160B 1N4161B 1N4163B 1N4164B 1N4165B 1N4166B
Text: ZENER DIODES 1W Part# 1N4158B 1N4159B 1N4160B 1N4161B 1N4162B 1N4163B 1N4164B 1N4165B 1N4166B 1N4167B 1N4168B 1N4169B 1N4170B 1N4171B 1N4172B 1N4173B 1N4174B 1N4175B 1N4176B 1N4400B 1N4401B 1N4402B 1N4403B 1N4404B 1N4405B 1N4406B 1N4407B 1N4408B 1N4409B 1N4410B
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1N4158B
1N4159B
1N4160B
1N4161B
1N4162B
1N4163B
1N4164B
1N4165B
1N4166B
1N4167B
1N416B
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L4448
Abstract: No abstract text available
Text: Small Signal Diodes SOD80 Mini Melf m iniBag rder 0rder NOum ber N um ber \ K ?JJ T ype 10 pcs. 500 pcs. N Sw itching type, G eneral Purpose 500m W B A V 100 70-0100 500100 LL914 70-0914 500914 L L4148 704148 504148 LL4150 70-4150 50-4150 L L4448 704448
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LL914
L4148
LL4150
L4448
LL101A
LL103A
100mA
L4448
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44258
Abstract: 1N473SA 1W4751A 1N4159B 1N4160B 1N4161B 1N4162B 1N4163B AT617 1N4166B
Text: ZENER DIODES P irt# Nominal Zener Voltjga T n t Currant M u lm u a Oynamic Impetfanc* *n<ûl 1N4158B 1N4159B 1N4160B 1N4161B 1N4162B 1N4163B 1N4164B 1N4165B 1N4166B 1N4167B 1N4166B 1N4169B 1N4170B 1N4171B 1N4172B 1N4173B 1N4174B 1N4175B 1N4176B 1N4400B 1N4401B
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1N41S8B
1N4159B
1N4160B
1N4161B
1N4162B
1N4163B
1H4164B
1N4165B
1N4166B
1N4167B
44258
1N473SA
1W4751A
AT617
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Untitled
Abstract: No abstract text available
Text: HEWLETT-PACKARD/ CMPNTS blE D • 4 4 4 7 5 6 4 ü ü ü T b l 2 ITS » H P A Hermetic Schottky Diodes for Mixers and Detectors 1-18 GHz Technical Data HSCH-6000 Series Features • Low P a ra s itic H erm etic P ackage -High Frequency Performance -M eets Performance
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HSCH-6000
MIL-STD-750
HSCH-6312,
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1N3842
Abstract: 4E20-28 4e20-3 4E30-8 1N3490 1N3299 1N3839 1N3300 1N3300A 1N3303
Text: FOUR LAYER DIODES Parameters for All 4 -La ye r Diodes @ 25°C Switching current 125pA Is Holding voltage Vh 0.5 to 1.2 volts On voltage Von <1,2V @70 mA On impedance Zon <2 ohms @ 70 mA @ 60 Hz Forward leakage current Ifl <2 nA @ 0.6 Vs Reverse leakage current
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125pA
UF4001
UF4002
UF4003
UF4004
UF4005
UF4006
UF4007
1N3842
4E20-28
4e20-3
4E30-8
1N3490
1N3299
1N3839
1N3300
1N3300A
1N3303
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SMPN7316
Abstract: DIODE Z0 031
Text: met SURFACE M O U N T SOT23 SMPN SERIES PIN DIODES FOR RF SW ITC H IN G A N D ATTENUATING CORPOI FEATURES Surface Mount Package Tape anc! Reel A vailable Reliability G old M etallized Chip Silicon Nitride/Glass Passivation Low Series Resistance Low Capacitance
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OT-23
SMPN7316
DIODE Z0 031
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3068
Abstract: No abstract text available
Text: SENSITRON MBRD640CT SEMICONDUCTOR Technical Data Data Sheet 3068, Rev. - MBRD640CT SCHOTTKY RECTIFIER Applications: • Switching power supply • Converters • Free-Wheeling diodes • Reverse battery protection • Battery charging Features: • • •
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MBRD640CT
MBRD640CT
3068
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smd diode JC 0p
Abstract: DIODE SMD GEM IXGH24N60AU1S
Text: Hi Per FAST IGBT with Diode IXGH 24N60AU1 IXGH24N60AU1S CES ^C25 v CE sat Combi Pack tfi = = = = 600 V 48 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v*CGR ^ = 25°C to 150°C; RGE = 1 Mi2 600
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24N60AU1
IXGH24N60AU1S
O-247
24N60AU1S)
24N60AU1S
D94006DE,
smd diode JC 0p
DIODE SMD GEM
IXGH24N60AU1S
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BC 247 B
Abstract: IXGH32N60 IXGH32N60CD1 DIODE SMD GEM
Text: □ IXYS ADVANCED TECHNICAL INFORMATION IXGH32N60CD1 IXGH32N60CD1S HiPerFAST IGBT with Diode ^fi typ Symbol Test Conditions V CES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V GES Continuous ±20 V V GEM Transient ±30 V ^C25
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IXGH32N60CD1
IXGH32N60CD1S
O-247
32N60CD1S)
BC 247 B
IXGH32N60
DIODE SMD GEM
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ST1009
Abstract: st1020 IN6266 L14G1 L14G1 phototransistor IRED L14G Phototransistor L14G2 st1332 1N6266
Text: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6266 PACKAGE DIMENSIONS DESCRIPTION The 1N6266 is a 940nm LED in a narrow angle, TO-46 package. SEATING FEATURES G ood optical to m echanical alignm ent SYMBOL INCHES MIN. A MILLIMETERS MAX. MIN. .255 NOTES MAX.
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1N6266
1N6266
940nm
ST1604
L14G1
L14G2
L14G1
L14G2
L14G1.
IN6266
ST1009
st1020
L14G1 phototransistor
IRED
L14G
Phototransistor L14G2
st1332
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diode h2z
Abstract: zener h2z gy 807 en 792-13
Text: — Am79213/Am79C203/031 A M D J! Advanced Subscriber Line Interface Circuit ASLIC Device Advanced Subscriber Line Audio-Processing Circuit (ASLAC™) Device TABLE OF CONTENTS Linecard Block D ia g ra m .3
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Am79213/Am79C203/031
diode h2z
zener h2z
gy 807
en 792-13
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ic 6264
Abstract: 1N6264A 1N6264
Text: Emitter Specifications _ 1N6264,1N6265 Infrared Emitter Gallium Arsenide Infrared Emitting Diode — * —-rth T h e 1N 6264 a n d 1N 6265 S e rie s a re g a lliu m a rs e n id e , lig h t e m ittin g d io d e s w h ic h e m it n o n - c o h e r e n t, in f r a r e d e n e rg y . T h e y a re id e a lly
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1N6264
1N6265
I00N0M
1N6265
ic 6264
1N6264A
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MM74HC08
Abstract: 74HC 74LS HC08 M14A M14D MM74HC08M MM74HC08MTC MM74HC08SJ diagram LG TV circuits
Text: S eptem ber 1983 Revised February 1999 EMICONDUCTGRTM MM74HC08 Quad 2-Input AND Gate General Description All inputs are protected from dam age due to static dis charge by internal diode clam ps to V qq and ground. T he M M 74H C 08 AND gates utilize advanced silicon-gate
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MM74HC08
MM74HC08
74HC
74LS
HC08
M14A
M14D
MM74HC08M
MM74HC08MTC
MM74HC08SJ
diagram LG TV circuits
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Untitled
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode VCES I IXGH22N50BU1 ix g h 22N50BU i s = 500 V = 44 A Preliminary data Symbol Test Conditions Maximum Ratings V VCGfl T, = 25°C to 150°C T , = 25°C to 150°C; RGE = 1 Mi2 500 500 V V VGES VGEM Continuous T ransient ±20 ±30
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IXGH22N50BU1
22N50BU
B2-13
22N50BU1
22NS0BU1S
----------------TVJ-125
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smd diode 819
Abstract: 30n60
Text: VCES IXGH30N60BU1 IXGH30N60BU1S ^C25 HiPerFAST IGBT with Diode = — VCE sat = tfi 600 V 60 A 1.8 V 130 ns TO-247 SMD (30N60BU1S) Symbol Test Conditions V CEs Td Maximum Ratings i c (TAB) 25°C to 150°C 600 V V V c G„ Tj = 25°C to 150°C; RGE = 1 MO
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IXGH30N60BU1
IXGH30N60BU1S
O-247
30N60BU1S)
typ200
B2-58
smd diode 819
30n60
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ad 0845
Abstract: 45c smd diode smd diode MS 22 SMD Diode KE
Text: aixYS DSP25 VRRM IFRMS Phase-leg Rectifier Diode 1200/1600 V 2x43 A 2x28 A FAVM r— V n sM V V RRM TO-247 SMD 1200 1600 Type DSP 25-12A DSP 25-16A ~l 4-4 -4 ! r V 1300 1700 TO -247 AD r - w H 1 DSP 25-12AS DSP 25-16AS 2 - i TO-247 SMD TO-247 AD I 3 TAB
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DSP25
O-247
5-12A
5-16A
25-12AS
25-16AS
ad 0845
45c smd diode
smd diode MS 22
SMD Diode KE
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32N60BU1
Abstract: No abstract text available
Text: HiPerFAST IGBT with Diode IXGH 32N60BU1 IXGH 32N60BU1S v CES ^C25 v CE sat »fl Maximum Ratings Symbol Test Conditions VCEs T j = 25°C to 150°C 600 V VcOR Tj = 25°C to 150°C; ROE = 1 M£2 600 V VGES Continuous ±20 V v GEM T ransient ±30 V ^C25 Tc =25°C
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32N60BU1
32N60BU1S
O-247
B2-77
B2-78
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