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    ULTRAFAST SWICHING TRANSISTOR Search Results

    ULTRAFAST SWICHING TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    ULTRAFAST SWICHING TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PD - 94739A IRG4PH40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 4739A IRG4PH40UD2 O-247AC

    IRF 3250

    Abstract: swiching transistor td 1410 transistor IRF 630 ir igbt 1200V 10A P channel 600v 20a IGBT 1000V 20A transistor irf 100v 200A C-150 IRG4PH40UD2
    Text: PD - 94739A IRG4PH40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than


    Original     		PDF 4739A IRG4PH40UD2 O-247AC IRF 3250 swiching transistor td 1410 transistor IRF 630 ir igbt 1200V 10A P channel 600v 20a IGBT 1000V 20A transistor irf 100v 200A C-150 IRG4PH40UD2

    IRF 3250

    Abstract: TD 1410 IC IGBT 1000V .200A application note P channel 600v 20a IGBT 035H C-150 IRFPE30 ultrafast swiching transistor IRG4PH40UD2PBF
    Text: PD - 95570 IRG4PH40UD2PbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter


    Original     		PDF IRG4PH40UD2PbF O-247AC IRF 3250 TD 1410 IC IGBT 1000V .200A application note P channel 600v 20a IGBT 035H C-150 IRFPE30 ultrafast swiching transistor IRG4PH40UD2PBF

    irf 3250

    Abstract: ULTRAFAST 10A 600V TD 1410 IC 035H C-150 IRFPE30 IRG4PH40UD2 IGBT 100V 200A td 1410
    Text: PD - 94739 IRG4PH40UD2 UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter


    Original     		PDF IRG4PH40UD2 O-247AC irf 3250 ULTRAFAST 10A 600V TD 1410 IC 035H C-150 IRFPE30 IRG4PH40UD2 IGBT 100V 200A td 1410

    induction cooking

    Abstract: 035H IRG4PH40UD2-EP IRGP30B120KD-E TO247AD package
    Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast


    Original     		PDF IRG4PH40UD2-EP 200kHz O-247AD induction cooking 035H IRG4PH40UD2-EP IRGP30B120KD-E TO247AD package

    ST T4 3660

    Abstract: 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits
    Text: PD - 96781 IRG4PH40UD2-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast


    Original     		PDF IRG4PH40UD2-E 200kHz O-247AD ST T4 3660 035H IRFPE30 IRG4PH40UD2-E induction cooking ge 6220 induction cooking circuits

    IRG4PH40UD2-EP

    Abstract: 035H IRGP30B120KD-E
    Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast


    Original     		PDF IRG4PH40UD2-EP 200kHz O-247AD IRG4PH40UD2-EP 035H IRGP30B120KD-E

    Untitled

    Abstract: No abstract text available
    Text: PD - 96781A IRG4PH40UD2-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in


    Original     		PDF 6781A IRG4PH40UD2-E 200kHz O-247AD

    Untitled

    Abstract: No abstract text available
    Text: PD - 95239 IRG4PH40UD2-EP UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast


    Original     		PDF IRG4PH40UD2-EP 200kHz O-247AD

    ST T4 3660

    Abstract: 035H IRFPE30 IRG4PH40UD2-E TO247AD package marking GC diode induction cooking circuits induction cooking
    Text: PD - 96781A IRG4PH40UD2-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast IGBT optimized for high operating frequencies up to 200kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in


    Original     		PDF 6781A IRG4PH40UD2-E 200kHz O-247AD ST T4 3660 035H IRFPE30 IRG4PH40UD2-E TO247AD package marking GC diode induction cooking circuits induction cooking

    mosfet 1200V 40A

    Abstract: 600v 20a IGBT driver IRGPS40B120U 800V 40A mosfet IGBT 600V 40A
    Text: PD- 94295 IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast IGBT C VCES = 1200V Features • • • • • Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE on Temperature Coefficient.


    Original     		PDF IRGPS40B120U Super-247 Super-247TM 5M-1994. O-274AA mosfet 1200V 40A 600v 20a IGBT driver IRGPS40B120U 800V 40A mosfet IGBT 600V 40A

    Untitled

    Abstract: No abstract text available
    Text: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF IRGPS40B120UDP Super-247 Super-247â IRFPS37N50A

    420 Diode

    Abstract: 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A
    Text: PD- 95967 IRGPS40B120UDP INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF IRGPS40B120UDP Super-247 Super-247TM PS37N50A IRFPS37N50A 420 Diode 719C IRGPS40B120UDP IRFPS37N50A 1000V 20A transistor UJ3000 igbt 1200V 60A

    420 Diode

    Abstract: ir igbt 1200V 40A IRGPS40B120UD TRANSISTOR N 1380 600 300 SC igbt 40A 600V 3IRGPS40B120UD
    Text: PD- 94240 IRGPS40B120UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF IRGPS40B120UD Super-247 Super-247TM 5M-1994. O-274AA 420 Diode ir igbt 1200V 40A IRGPS40B120UD TRANSISTOR N 1380 600 300 SC igbt 40A 600V 3IRGPS40B120UD

    IRFPS37N50A

    Abstract: IRGPS40B120UP 312V marking code igbt 40a 600v
    Text: PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		PDF 5899A IRGPS40B120UP Super-247 Super-247TM IRFPS37N50A IRFPS37N50A IRGPS40B120UP 312V marking code igbt 40a 600v

    TRANSISTOR N 1380 600 300 SC

    Abstract: MOSFET 40A 600V IRGPS40B120U mosfet 1200V 40A 1200V, IGBT 500A 1200V
    Text: PD- 94295A IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		PDF 4295A IRGPS40B120U Super-247 Super-247TM 5M-1994. O-274AA TRANSISTOR N 1380 600 300 SC MOSFET 40A 600V IRGPS40B120U mosfet 1200V 40A 1200V, IGBT 500A 1200V

    Untitled

    Abstract: No abstract text available
    Text: PD- 95899 IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		PDF IRGPS40B120UP Super-247 Super-247â IRFPS37N50A IRFPS37N50A

    Untitled

    Abstract: No abstract text available
    Text: PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		PDF 5899A IRGPS40B120UP Super-247 Super-247â IRFPS37N50A IRFPS37N50A

    Untitled

    Abstract: No abstract text available
    Text: PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		PDF 94295D IRGPS40B120U Super-247 Super-247â IRFPS37N50A IRFPS37N50A

    mosfet 1200V 40A

    Abstract: IRFPS37N50A IRGPS40B120U 800V 40A mosfet 94295D *40b120u ir igbt 1200V 40A
    Text: PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		PDF 94295D IRGPS40B120U Super-247 Super-247TM Super-247TM IRFPS37N50A IRFPS37N50A mosfet 1200V 40A IRGPS40B120U 800V 40A mosfet 94295D *40b120u ir igbt 1200V 40A

    mosfet 1200V 40A

    Abstract: *40b120u ir igbt 1200V 40A 800V 40A mosfet igbt 40A 600V IRFPS37N50A IRGPS40B120U transistor 600v 500a 312V marking code l200h
    Text: PD- 94295B IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		PDF 94295B IRGPS40B120U Super-247 Super-247TM Super-247TM IRFPS37N50A IRFPS37N50A mosfet 1200V 40A *40b120u ir igbt 1200V 40A 800V 40A mosfet igbt 40A 600V IRGPS40B120U transistor 600v 500a 312V marking code l200h

    Untitled

    Abstract: No abstract text available
    Text: PD- 94295C IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.


    Original     		PDF 94295C IRGPS40B120U Super-247 Super-247â IRFPS37N50A IRFPS37N50A

    transistor D 5032

    Abstract: 12 H 595 IRGPS60B120KD igbt 60a IGBT 900v 60a A1508 IGBT 1200V 60A Ir 900v 60a IRFPS37N50A 120A8
    Text: PD- 94239B IRGPS60B120KD INSULATED GATE BIPOLAR TRANSISTOR WITH Motor Control Co-Pack IGBT ULTRAFAST SOFT RECOVERY DIODE C VCES = 1200V Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.


    Original     		PDF 94239B IRGPS60B120KD Super-247 Super-247TM IRFPS37N50A transistor D 5032 12 H 595 IRGPS60B120KD igbt 60a IGBT 900v 60a A1508 IGBT 1200V 60A Ir 900v 60a IRFPS37N50A 120A8

    IRGP30B60

    Abstract: C-150 IRGP30B60KD-E
    Text: PD - 94388A IRGP30B60KD-E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • • • Low VCE on Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics.


    Original     		PDF 4388A IRGP30B60KD-E O-247AD O-247AD IRGP30B60 C-150 IRGP30B60KD-E