Untitled
Abstract: No abstract text available
Text: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C G G IC = 20A, TC =100°C TJ max = 150°C VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating Microwave ovens
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IRG7PK35UD1PbF
IRG7PK35UD1-EPbF
IRG7PK35UD1PbFÂ
247ACÂ
IRG7PK35UD1â
247ADÂ
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APT30DS60B
Abstract: APT30DS60S APT6017BLL 400v high speed diode
Text: 2 1 TO -24 7 D3PAK 1 - Cathode 2 2 - Anode 1 1 2 1 2 APT30DS60B 600V APT30DS60S 600V 20A 20A 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times
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APT30DS60B
APT30DS60S
O-247
APT6017BLL
400v high speed diode
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Untitled
Abstract: No abstract text available
Text: 2 1 TO -24 7 1 - Cathode 2 2 - Anode 1 D3PAK 1 2 1 APT30DS60B 600V APT30DS60S 600V 20A 20A 2 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times
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APT30DS60B
APT30DS60S
O-247
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Untitled
Abstract: No abstract text available
Text: 2 1 TO -24 7 D3PAK 1 - Cathode 2 2 - Anode 1 1 2 1 2 APT30DS60B 600V APT30DS60S 600V 20A 20A 2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Anti-Parallel Diode • Ultrafast Recovery Times
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APT30DS60B
APT30DS60S
O-247
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Untitled
Abstract: No abstract text available
Text: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C C C IC = 20A, TC =100°C TJ max = 150°C G G VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating Microwave ovens
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IRG7PK35UD1PbF
IRG7PK35UD1-EPbF
IRG7PK35UD1PbFÂ
247ACÂ
IRG7PK35UD1â
247ADÂ
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Untitled
Abstract: No abstract text available
Text: IRGS4620DPbF IRGB4620DPbF IRGP4620D -E PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C G G IC = 20A, TC =100°C G tSC ≥ 5µs, TJ(max) = 175°C C G E VCE(ON) typ. = 1.55V @ IC = 12A n-channel Applications • Appliance Drive
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IRGS4620DPbF
IRGB4620DPbF
IRGP4620D
IRGP4620DPbF
O-247AC
O-220AC
IRGP4620D-EPbF
O-247AD
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SF20A400H
Abstract: SF20A400HPI marking JC diode SF20A
Text: SF20A400HPI Ultrafast Recovery Rectifier 400V, 20A ULTRAFAST DUAL RECTIFIERS Features Low forward voltage drop and leakage current Ultrafast reverse recovery time trr<30ns Low power loss and high efficiency Dual common cathode rectifier construction
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SF20A400HPI
O-220F-3L
SF20A400HPI
KSD-D0O027-001
SF20A400H
marking JC diode
SF20A
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Untitled
Abstract: No abstract text available
Text: SF20A400HPR Ultrafast Recovery Rectifier 400V, 20A ULTRAFAST DUAL RECTIFIERS Features Low forward voltage drop and leakage current Ultrafast reverse recovery time trr<30ns Low power loss and high efficiency Dual common cathode rectifier construction
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SF20A400HPR
O-220F-3L
SF20A400HPR
KSD-D0O041-000
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SF20A400H
Abstract: ultrafast diode 10a 400v SF20A400HPR
Text: SF20A400HPR Ultrafast Recovery Rectifier 400V, 20A ULTRAFAST DUAL RECTIFIERS Features Low forward voltage drop and leakage current Ultrafast reverse recovery time trr<30ns Low power loss and high efficiency 1 Dual common cathode rectifier construction
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SF20A400HPR
O-220F-3L
SF20A400HPR
KSD-D0O041-000
SF20A400H
ultrafast diode 10a 400v
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Untitled
Abstract: No abstract text available
Text: SF20A400HPI Ultrafast Recovery Rectifier 400V, 20A ULTRAFAST DUAL RECTIFIERS Features Low forward voltage drop and leakage current Ultrafast reverse recovery time trr<30ns Low power loss and high efficiency Dual common cathode rectifier construction
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SF20A400HPI
O-220F-3L
SF20A400HPI
KSD-D0O027-001
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SF20A400
Abstract: No abstract text available
Text: SF20A400HZ2 Ultrafast Recovery Rectifier 400V, 20A ULTRAFAST DUAL RECTIFIERS Features Low forward voltage drop and leakage current Ultrafast reverse recovery time trr<30ns Low power loss and high efficiency 1 Dual common cathode rectifier construction
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SF20A400HZ2
O-220F-3L
SF20A400HPI
KSD-D0O037-000
SF20A400
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SF20A400H
Abstract: SF20A400HPI SF20A400
Text: SF20A400HPI Semiconductor Ultrafast Recovery Rectifier 400V, 20A ULTRAFAST DUAL RECTIFIERS Features y Low forward voltage drop and leakage current y Ultrafast reverse recovery time trr<30ns y Low power loss and high efficiency y Dual common cathode rectifier construction
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SF20A400HPI
O-220F-3L
SF20A400HPI
KSD-D0O027-000
SF20A400H
SF20A400
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BYV29
Abstract: BYV29-300 BYV29-400 BYV29B BYV29F
Text: BYV29, BYV29F, BYV29B, UG8GT, UGF8GT, UGB8GT Series Ultrafast Rectifier t c u rod P New Reverse Voltage 300 to 400V Forward Current 8.0A Reverse Recovery Time 35ns TO-220AC BYV29, UG8 Series ITO-220AC (BYV29F, UGF8 Series) 0.185 (4.70) 0.415 (10.54) MAX.
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BYV29,
BYV29F,
BYV29B,
O-220AC
ITO-220AC
50mVp-p
BYV29
BYV29-300
BYV29-400
BYV29B
BYV29F
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Untitled
Abstract: No abstract text available
Text: PD - 94739A IRG4PH40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter parameter distribution and higher efficiency than
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4739A
IRG4PH40UD2
O-247AC
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IRF 3250
Abstract: TD 1410 IC IGBT 1000V .200A application note P channel 600v 20a IGBT 035H C-150 IRFPE30 ultrafast swiching transistor IRG4PH40UD2PBF
Text: PD - 95570 IRG4PH40UD2PbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode New IGBT design provides tighter
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IRG4PH40UD2PbF
O-247AC
IRF 3250
TD 1410 IC
IGBT 1000V .200A application note
P channel 600v 20a IGBT
035H
C-150
IRFPE30
ultrafast swiching transistor
IRG4PH40UD2PBF
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ug10gct
Abstract: BYT28 BYT28B BYT28F UG10 UGB10 UGB10GCT UGF10 UGF10GCT
Text: BYT28, BYT28F, BYT28B UG10GCT, UGF10GCT, UGB10GCT Series Dual Ultrafast Soft Recovery Rectifier Reverse Voltage 300 to 400V Forward Current 10A Reverse Recovery Time 35ns ct u d Pro New ITO-220AB BYT28F, UGF10 Series 0.188 (4.77) 0.172 (4.36) 0.405 (10.27)
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BYT28,
BYT28F,
BYT28B
UG10GCT,
UGF10GCT,
UGB10GCT
ITO-220AB
UGF10
O-220AB
ug10gct
BYT28
BYT28B
BYT28F
UG10
UGB10
UGF10GCT
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igbt 400V 20A
Abstract: igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V
Text: I- MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS IGBTs PAGE SELECTION G U ID E .
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HGTD6N40E1,
HGTD6N50E1,
HGTD10N40F1,
HGTD10N50F1,
HGTH12N40C1,
HGTM12N40C1,
HGTP10N40C1,
HGTM12N60D1
HGTP12N60D1
HGTH20N40C1,
igbt 400V 20A
igbt 500V 15A
diode 500v 10A
diode 10a 400v
20A 500v igbt
igbt 1000v 10A
igbt 1200V 20A
DIODE 20A
igbt 400V 5A
current sensing 400V
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diode C721
Abstract: c719 transistor
Text: PD - 9.808A kitemational lüRectifier IRGPC40UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • Switching-loss rating includes all "tail" losses • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz
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IRGPC40UD2
O-247AC
C-724
diode C721
c719 transistor
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C1030
Abstract: c1036 transistor C1032 CEE 16a CEE 32A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST IRGPH50KD2 C1030 transistor
Text: PD-9.1121A international H>§Rectifier IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • Short circuit rated -10ps @125°C, VGE= 10V V CES = 1200V 5ys @ VGE = 15V • Switching-loss rating includes all "tail" losses
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IRGPH50KD2
-10ps
O-247AC
C-1036
C1030
c1036 transistor
C1032
CEE 16a
CEE 32A
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST
IRGPH50KD2
C1030 transistor
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Untitled
Abstract: No abstract text available
Text: International @ Rectifier P D -9.1121A IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features Vces = 1200V • Short circuit rated -10ps @125°C, VGE= 10V 5^s @ VGE = 15V • Switching-loss rating includes all “tail" losses
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IRGPH50KD2
-10ps
O-247AC
S5452
C-1036
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rac 16a 400v
Abstract: C1030 irgph50kd2 e C1030 transistor VS 1838 B C1036 high power Rectifier diode c1036 transistor rac 16a- 400v c1034
Text: PD - 9.1121A bitemational tor]Rectifier IRGPH50KD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features V C ES • Short circuit rated -1 Ops @ 125°C, VGE = 10V 5jis 0 VGE = 15V • Switching-loss rating includes all "tail" losses
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IRGPH50KD2
C-1035
O-247AC
C-1036
rac 16a 400v
C1030
irgph50kd2 e
C1030 transistor
VS 1838 B
C1036
high power Rectifier diode
c1036 transistor
rac 16a- 400v
c1034
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C1030 transistor
Abstract: c1036 transistor transistor c1032 c1032 IC of XOR GATE C1030 c1036 c1035 C-1035 C-1032
Text: International S Rectifier P D - 9.1121A IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • Short circuit rated -10 js @125°C, VGE= 10V V ces = 1 200V {5|js @ VGE = 15V • Switching-ioss rating includes all "tail" losses
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IRGPH50KD2
-10jjs
C-1035
O-247AC
C-1036
C1030 transistor
c1036 transistor
transistor c1032
c1032
IC of XOR GATE
C1030
c1036
c1035
C-1032
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IR 1838
Abstract: IRGPH50KD2 c1034 CEE 16a CEE 32A 1838 ir C1029 C-1032
Text: PD-9.1121A international H>§Rectifier IRGPH50KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • Short circuit rated -10ps @125°C, VGE= 10V V CES = 1200V 5ys @ VGE = 15V • Switching-loss rating includes all "tail" losses
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IRGPH50KD2
-10ps
O-247AC
C-1036
IR 1838
IRGPH50KD2
c1034
CEE 16a
CEE 32A
1838 ir
C1029
C-1032
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STTA2006M
Abstract: smd transistor p3
Text: f Z 7 SCS-THOMSON Ä 7#@¡*fô smi(g¥[MO S _ STTA2006M ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If(av 20A V rrm 600V trr (typ) 30ns V f (max) 1.5 V FEATURES AND BENEFITS • SPECIFIC TO “FREEWHEEL MODE” OPERA TIONS: Freewheel or Booster Diode.
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STTA2006M
associat9001000
0Qb0113
STTA2006M
smd transistor p3
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