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    ULTRA LOW POWER MOSFET FAST SWITCHING Search Results

    ULTRA LOW POWER MOSFET FAST SWITCHING Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    ULTRA LOW POWER MOSFET FAST SWITCHING Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SHD225623

    Abstract: max3090
    Text: SHD225623 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4144, REV. - HERMETIC POWER MOSFET N-CHANNEL ULTRA LOW RDS ON FEATURES: œ 200 Volt, 0.03 Ohm, 90A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Ultra Low RDS (on) MAXIMUM RATINGS


    Original     		PDF SHD225623 O-254 O-254 SHD225623 max3090

    SHD225623

    Abstract: No abstract text available
    Text: SHD225623 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4144, REV. - HERMETIC POWER MOSFET N-CHANNEL ULTRA LOW RDS ON FEATURES: œ 200 Volt, 0.03 Ohm, 90A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Ultra Low RDS (on) MAXIMUM RATINGS


    Original     		PDF SHD225623 SHD225623

    AF8958C

    Abstract: P-Channel MOSFET code L 1A P-Channel MOSFET code 1A N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N and P MOSFET
    Text: AF8958C N and P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Low Gate Charge - Fast Switching Speed - RoHS Compliant The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and


    Original     		PDF AF8958C AF8958C P-Channel MOSFET code L 1A P-Channel MOSFET code 1A N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N and P MOSFET

    4935p

    Abstract: No abstract text available
    Text: AF4935P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Dual P MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and


    Original     		PDF AF4935P 4935P

    4910n

    Abstract: PN channel MOSFET 10A
    Text: AF4910N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Low On-resistance - Simple Drive Requirement - Dual N MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and


    Original     		PDF AF4910N 4910N PN channel MOSFET 10A

    4920n

    Abstract: Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 AF4920N AA MARKING CODE SO8
    Text: AF4920N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Low On-resistance - Simple Drive Requirement - Dual N MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and


    Original     		PDF AF4920N 4920N 4920N Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 AF4920N AA MARKING CODE SO8

    PN channel MOSFET 10A

    Abstract: 4910N AF4910N
    Text: AF4910N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Dual N MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and


    Original     		PDF AF4910N 4910N 015x45 PN channel MOSFET 10A AF4910N

    4935P

    Abstract: AF4935P
    Text: AF4935P P-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Simple Drive Requirement - Low On-resistance - Dual P MOSFET Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and


    Original     		PDF AF4935P 4935P 015x45 AF4935P

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 75N75 Power MOSFET 80A, 75V N-CHANNEL POWER MOSFET 1  FEATURES * RDS ON =11mΩ @VGS=10V, ID=40A * Ultra low gate charge ( typical 117 nC ) * Fast switching capability * Low reverse transfer Capacitance (CRSS= typical 240 pF )


    Original     		PDF 75N75 O-220F1 O-220F2 O-263 O-220F O-220 75N75 QW-R502-097

    9945n

    Abstract: 9945n mosfet
    Text: AF9945N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Low On-resistance - Single Drive Requirement - Surface Mount Package The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and


    Original     		PDF AF9945N 9945N 9945n mosfet

    9945n

    Abstract: 9945n mosfet AF9945N If 9945n
    Text: AF9945N N-Channel Enhancement Mode Power MOSFET „ Features „ General Description - Low On-resistance - Single Drive Requirement - Surface Mount Package The Advanced Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and


    Original     		PDF AF9945N 9945N 015x45 9945n mosfet AF9945N If 9945n

    UT2302

    Abstract: 114 c
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance ,excellent thermal and electrical capabilities .


    Original     		PDF UT2302 UT2302 UT2302L UT2302-AE3-R UT2302L-AE3-R OT-23 QW-R502-11ues QW-R502-114 114 c

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance ,excellent thermal and electrical capabilities .


    Original     		PDF UT2302 UT2302 UT2302L UT2302-AE3-R UT2302L-AE3-R OT-23 QW-R502-114

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2309 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2309 is P-channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.


    Original     		PDF UT2309 UT2309 UT2309L UT2309-AE3-R UT2309L-AE3-R OT-23 QW-R502-127

    UT2309L

    Abstract: UT2309-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2309 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2309 is P-channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.


    Original     		PDF UT2309 UT2309 UT2309L UT2309G UT2309-AE3-R UT2309L-AE3-R UT2309G-AE3-R OT-23 QW-R502-148 UT2309L UT2309-AE3-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2309 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2309 is P-channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.


    Original     		PDF UT2309 UT2309 UT2309L UT2309-AE3-R UT2309L-AE3-R OT-23 QW-R502-127

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2306 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2306 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.


    Original     		PDF UT2306 UT2306 UT2306L UT2306-AE3-R UT2306L-AE3-R OT-23 QW-R502-130

    UT2306

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2306 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2306 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.


    Original     		PDF UT2306 UT2306 UT2306L UT2306-AE3-R UT2306L-AE3-R OT-23 QW-R502-130

    UT2302

    Abstract: UT2302-AE3-R UT2302L-AE3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2302 is N-channel Power MOSFET, designed with high density cell,. with fast switching speed, ultra low on-resistance ,excellent thermal and electrical capabilities .


    Original     		PDF UT2302 UT2302 UT2302L UT2302-AE3-R UT2302L-AE3-R OT-23 QW-R502-114 UT2302-AE3-R UT2302L-AE3-R

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2302 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2302 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance ,excellent thermal and electrical capabilities .


    Original     		PDF UT2302 UT2302 UT2302L UT2302-AE3-R UT2302L-AE3-R OT-23 QW-R502-114

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2309A Power MOSFET P-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2309A is P-channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.


    Original     		PDF UT2309A UT2309A UT2309AL UT2309A-AE3-R UT2309AL-AE3-R OT-23 QW-R502ues QW-R502-148

    list of n channel power mosfet

    Abstract: UT2308 UY SOT-23 ultra low power mosfet fast switching UT2308L
    Text: UNISONIC TECHNOLOGIES CO., LTD UT2308 Power MOSFET N-CHANNEL ENHANCEMENT MODE „ DESCRIPTION The UT2308 is N-channel Power MOSFET, designed with high density cell, with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.


    Original     		PDF UT2308 UT2308 UT2308L UT2308-AE3-R UT2308L-AE3-R OT-23 QW-R502-128 list of n channel power mosfet UY SOT-23 ultra low power mosfet fast switching UT2308L

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT9435 Power MOSFET P-CHANNEL ENHANCEMENT MODE „ 1 DESCRIPTION The UT9435 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, excellent thermal and electrical capabilities.


    Original     		PDF UT9435 UT9435 OT-89 UT9435L UT9435-AB3-R UT9435L-AB3-R QW-R502-155

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT9435 Power MOSFET P-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UT9435 is P-Channel Power MOSFET, designed with high density cell with fast switching speed, ultra low on-resistance, and excellent thermal and electrical capabilities.


    Original     		PDF UT9435 UT9435 UT9435G-AB3-R UT9435L-TN3-R UT9435G-TN3-R UT9435G-S08-R OT-89 O-252 QW-R502-155