2n4117a
Abstract: No abstract text available
Text: 2N/PN/SST 4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET AMPLIFIER FEATURES LOW POWER IDSS<600 µA 2N4117A MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 3) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage
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2N4117A)
2N4117A
OT-23
300mW
25-year-old,
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2N4119
Abstract: 2N4117 FN4117 2N4117A 2N4118 2N4118A 2N4119A LS4117 igss jfet "low reverse current"
Text: LS4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES LOW POWER IDSS<90 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1)
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LS4117,
2N4117)
2N4117A
FN4117/A
2N4119
2N4117
FN4117
2N4118
2N4118A
2N4119A
LS4117
igss
jfet "low reverse current"
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ultra low igss pA mosfet
Abstract: n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel
Text: LS4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES LOW POWER IDSS<90 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1)
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LS4117,
2N4117)
2N4117A
300mW
2N4117/A
2N4118
FN4117/A
2N4118A
ultra low igss pA mosfet
n-channel JFET sot23-6
Ultra High Input Impedance N-Channel JFET Amplifier
N channel jfet
3N191 SPICE
P-Channel Depletion Mode FET
2n4117 jfet
jfet transistor 2n4391
U422
ultra low igss pA mosfet n channel
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IRFP2907
Abstract: bare Die mosfet IRFP2907 Application Notes IRFC2907B
Text: PD - 93777 IRFC2907B HEXFET Power MOSFET Die in Wafer Form 100% Tested at Probe l Available in Tape and Reel, Chip Pack, Sawn on Film and Gel Pack* l Ultra Low On-Resistance Electrical Characteristics * D l Parameter V BR DSS RDS(on)* VGS(th) IDSS IGSS
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IRFC2907B
200nA
IRFP2907
bare Die mosfet
IRFP2907 Application Notes
IRFC2907B
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PDF
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amelco
Abstract: No abstract text available
Text: 2N and SST 4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET FEATURES LOW POWER IDSS<600 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117 A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1) -40V
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2N4117)
2N4117
300mW
OT-23
2N4118
2N4117/A
2N4119
UNITS100
25-year-old,
amelco
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PDF
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amelco
Abstract: No abstract text available
Text: 2N and SST 4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET FEATURES LOW POWER IDSS<600 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117 A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1) -40V
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2N4117)
2N4117
300mW
OT-23
2N4118
2N4117/A
2N4119
UNI100
25-year-old,
amelco
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PDF
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XP134A02A1SR
Abstract: XP134A11A1SR XP134A1275SR XP135A1145SR
Text: XP134A02A1SR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.11Ω MAX ◆ Ultra High-Speed Switching ◆ SOP-8 Package ◆ Two FET Devices built-in • Applications ■ General Description ■ Features The XP134A02A1SR is a P-Channel Power MOS FET with low on-state
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XP134A02A1SR
XP134A02A1SR
Vds10V
XP134A11A1SR
XP134A1275SR
XP135A1145SR
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Untitled
Abstract: No abstract text available
Text: ◆N-Channel/P-channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.045Ω MAX. (N-ch) : 0.110Ω(MAX.) (P-ch) ◆Ultra High-Speed Switching ◆SOP-8 Package ◆Two FET Devices Built-in •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP135A1145SR is an N-channel/P-channel Power MOS
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XP135A1145SR
XP135A1145SR
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Untitled
Abstract: No abstract text available
Text: ◆N-Channel/P-channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.045Ω MAX. (N-ch) : 0.110Ω(MAX.) (P-ch) ◆Ultra High-Speed Switching ◆SOP-8 Package ◆Two FET Devices Built-in •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP135A1145SR is an N-channel/P-channel Power MOS
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XP135A1145SR
XP135A1145SR
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XP162A02D5PR
Abstract: XP162A11C0PR XP162A12A6PR sot89 fet XP162A11
Text: XP162A02D5PR Power MOS FET ◆ P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance: 0.45Ω MAX ◆ Ultra High-Speed Switching ◆ SOT-89 Package • Applications ■ General Description ■ Features The XP162A02D5PR is a P-Channel Power MOS FET with low on-state
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XP162A02D5PR
OT-89
XP162A02D5PR
OT-89
XP162A11C0PR
XP162A12A6PR
sot89 fet
XP162A11
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Low Capacitance MOS FET
Abstract: Low Input Capacitance MOS FET fet n-channel pin configuration Pch MOS FET XP135A1145SR P Channel Ultra Low Gate Charge
Text: XP135A1145SR Power MOS FET ◆ N-Channel/P-Channel Power MOS FET ◆ DMOS Structure ◆ Low On-State Resistance : 0.045Ω max Nch 0.110Ω max (Pch) ◆ Ultra High-Speed Switching ◆ SOP - 8 Package ◆ Two FET Devices Built-in • ● ● ● ■ General Description
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XP135A1145SR
XP135A1145SR
Vds10V
Low Capacitance MOS FET
Low Input Capacitance MOS FET
fet n-channel pin configuration
Pch MOS FET
P Channel Ultra Low Gate Charge
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XP131A1520SR
Abstract: No abstract text available
Text: ◆N-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance: 0.02Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP131A1520SR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching
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XP131A1520SR
XP131A1520SR
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an 1499 diode
Abstract: XP151A11B0MR
Text: ◆N-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.17Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-23 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP151A11B0MR is an N-channel Power MOSFET with low
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OT-23
XP151A11B0MR
OT-23
XP151A11B0MR
an 1499 diode
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SOP8 Package
Abstract: XP133A1235SR ultra low igss
Text: ◆N-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.035Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package ◆Two FET Devices Built-in •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP133A1235SR is an N-channel Power MOSFET with low
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XP133A1235SR
XP133A1235SR
SOP8 Package
ultra low igss
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Untitled
Abstract: No abstract text available
Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.045Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP132A1545SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching
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XP132A1545SR
XP132A1545SR
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PDF
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Untitled
Abstract: No abstract text available
Text: ◆N-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.035Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP131A1235SR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching
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XP131A1235SR
XP131A1235SR
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Untitled
Abstract: No abstract text available
Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance: 0.075Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package ◆2 FET Devices Built-in •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP134A1275SR is a P-channel Power MOSFET with low
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XP134A1275SR
XP134A1275SR
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PDF
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Untitled
Abstract: No abstract text available
Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.3Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-23 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP152A12C0MR is a P-channel Power MOSFET with low
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OT-23
XP152A12C0MR
OT-23
XP152A12C0MR
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Untitled
Abstract: No abstract text available
Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.28Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-89 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP162A11C0PR is a P-channel Power MOSFET with low
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OT-89
XP162A11C0PR
OT-89
XP162A11C0PR
XP161A11A1PR
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Untitled
Abstract: No abstract text available
Text: ◆N-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.17Ω MAX. ◆Ultra High-Speed Switching ◆Gate Protect Diode Built-in ◆SOT-23 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP151A11B0MR is an N-channel Power MOSFET with low
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OT-23
XP151A11B0MR
OT-23
XP151A11B0MR
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Untitled
Abstract: No abstract text available
Text: ◆P-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.11Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP132A11A1SR is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching
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XP132A11A1SR
XP132A11A1SR
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Untitled
Abstract: No abstract text available
Text: ◆N-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance: 0.105Ω MAX. ◆Gate Protect Diode Built-in ◆Ultra High-Speed Switching ◆SOT-89 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP161A11A1PR is an N-channel Power MOSFET with low
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OT-89
XP161A11A1PR
XP161A11A1PR
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XP131A1235SR
Abstract: No abstract text available
Text: ◆N-Channel Power MOSFET ◆DMOS Structure ◆Low On-State Resistance : 0.035Ω MAX. ◆Ultra High-Speed Switching ◆SOP-8 Package •APPLICATIONS ■GENERAL DESCRIPTION ■FEATURES The XP131A1235SR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching
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XP131A1235SR
XP131A1235SR
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SOT89 093 CD
Abstract: mos sot-89 2g LF3A XP151A01C3MR XP151A03A7MR power mos thermal
Text: XP151A01C3MR ♦ ♦ ▲ ♦ Power MOS FET N-Channel Power MOS FET DMOS Structure . x n -x „ „ AV Low On-State Resistance: 0.3 30 MAX • • • ^ • # ♦ Ultra High-Speed Switching ♦ SOT-23 Package Applications Notebook PCs Cellular and portable phones
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OCR Scan
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XP151A01C3MR
OT-23
XP151A01C3MR
XP162A02D5PR
XP162A02D5PR
SOT89 093 CD
mos sot-89 2g
LF3A
XP151A03A7MR
power mos thermal
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