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    ULTRA LOW GATE CHARGE Search Results

    ULTRA LOW GATE CHARGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TB67H481FTG Toshiba Electronic Devices & Storage Corporation Stepping and Brushed Motor Driver /Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / IN input type / VQFN32 Visit Toshiba Electronic Devices & Storage Corporation
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    ULTRA LOW GATE CHARGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: STS5N15M3 N-channel 150V - 45mΩ - 4.5A - SO-8 Ultra low gate charge MDmesh III Power MOSFET PRELIMINARY DATA Features Type VDSS RDS on ID STS5N15M3 150V <0.057Ω 4.5A • Low on-resistance ■ Low input capacitance and gate charge ■ Low gate input resistance


    Original     		PDF STS5N15M3 STS5N15M3

    JESD97

    Abstract: No abstract text available
    Text: STSJ25N15M3 N-channel 150V - 45mΩ - 5A - PowerSO-8 Ultra low gate charge MDmesh™ III Power MOSFET PRELIMINARY DATA Features Type VDSS RDS on ID STSJ25N15M3 150V <0.057Ω 5A • Low on-resistance ■ Low input capacitance and gate charge ■ Low gate input resistance


    Original     		PDF STSJ25N15M3 JESD97

    MDMESH

    Abstract: STS5N15M3 JESD97
    Text: STS5N15M3 N-channel 150 V, 45 mΩ, 5 A, SO-8 ultra low gate charge MDmesh III Power MOSFET Features Type VDSS RDS on max ID STS5N15M3 150 V < 0.057 Ω 5A • Low on-resistance ■ Low input capacitance and gate charge ■ Low gate input resistance ■


    Original     		PDF STS5N15M3 MDMESH STS5N15M3 JESD97

    JESD97

    Abstract: STS5N15M3
    Text: STS5N15M3 N-channel 150 V, 45 mΩ, 5 A, SO-8 ultra low gate charge MDmesh III Power MOSFET Features Type VDSS RDS on max ID STS5N15M3 150 V < 0.057 Ω 5A • Low on-resistance ■ Low input capacitance and gate charge ■ Low gate input resistance ■


    Original     		PDF STS5N15M3 JESD97 STS5N15M3

    PI5101

    Abstract: No abstract text available
    Text: PI5101   RDS on FETTM Series 360μΩ, 5V/60A N-Channel MOSFET Product Summary Features Ultra Low “micro-Ohm” RDS(on) Extremely Low Gate Charge Very Low Gate Resistance High Density, Low Profile Very Low Package Inductance Low Thermal Resistance


    Original     		PDF PI5101 V/60A 60ADC PI5101 PI5101-00-LGIZ

    APT94N65B2C3

    Abstract: APT94N65B2C3G APT94N65B2
    Text: 650V 94A APT94N65B2C3 APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. COOLMOS Super Junction MOSFET Power Semiconductors T-MaxTM • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated D


    Original     		PDF APT94N65B2C3 APT94N65B2C3G* APT94N65B2C3S O-247 APT94N65B2C3 APT94N65B2C3G APT94N65B2

    Untitled

    Abstract: No abstract text available
    Text: APT97N65B2C6 APT97N65LC6 650V 97A 0.041 APT97N65B2C6 COOLMOS Super Junction MOSFET Power Semiconductors T-Max TO-264 • Ultra Low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated APT97N65LC6 • Extremedv/dt Rated


    Original     		PDF APT97N65B2C6 APT97N65LC6 O-264 APT97N65B2 O-247

    Untitled

    Abstract: No abstract text available
    Text: APTC60HM70RT3G CoolMOS : VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Full bridge + rectifier bridge CoolMOS Power module Application • Solar converter Features • CoolMOS™ - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated


    Original     		PDF APTC60HM70RT3G

    Untitled

    Abstract: No abstract text available
    Text: APTC60HM70RT3G CoolMOS : VDSS = 600V RDSon = 70mΩ max @ Tj = 25°C Full bridge + rectifier bridge CoolMOS Power module Application • Solar converter Features • CoolMOS™ - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated


    Original     		PDF APTC60HM70RT3G

    Untitled

    Abstract: No abstract text available
    Text: APTC60HM70RT3G CoolMOS : VDSS = 600V RDSon = 70m max @ Tj = 25°C Full bridge + rectifier bridge CoolMOS Power module Application • Solar converter Features  CoolMOS™ - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated


    Original     		PDF APTC60HM70RT3G

    SIPC03N60S5

    Abstract: No abstract text available
    Text: Preliminary SIPC03N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC03N60S5


    Original     		PDF SIPC03N60S5 80mm2 5343N, SIPC03N60S5

    SIPC05N60S5

    Abstract: No abstract text available
    Text: Preliminary SIPC05N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC05N60S5


    Original     		PDF SIPC05N60S5 5313N, SIPC05N60S5

    SIPC03N60S5

    Abstract: No abstract text available
    Text: Preliminary SIPC03N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC03N60S5


    Original     		PDF SIPC03N60S5 80mm2 5343S, SIPC03N60S5

    SIPC14N60S5

    Abstract: No abstract text available
    Text: Preliminary SIPC14N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC14N60S5


    Original     		PDF SIPC14N60S5 Q67050-A4093 5363S, SIPC14N60S5

    sp*20n60c3

    Abstract: SPD06S60
    Text: APT20N60BC3 APT20N60SC3 600V 20.7A 0.190Ω Super Junction MOSFET D3PAK COOLMOS TO-247 Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package


    Original     		PDF APT20N60BC3 APT20N60SC3 O-247 O-247 Le113) sp*20n60c3 SPD06S60

    Untitled

    Abstract: No abstract text available
    Text: APT47N60BC3 APT47N60SC3 600V 47A 0.070Ω Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package D


    Original     		PDF APT47N60BC3 APT47N60SC3 O-247 O-247

    Untitled

    Abstract: No abstract text available
    Text: 600V 31A 0.100Ω APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Super Junction MOSFET COOLMOS B TO Power Semiconductors -2 47 D3PAK • Ultra Low RDS(ON) (S) • Low Miller Capacitance • Ultra Low Gate Charge, Qg


    Original     		PDF APT31N60BCS APT31N60SCS APT31N60BCSG* APT31N60SCSG* O-247

    Untitled

    Abstract: No abstract text available
    Text: APT20N60BC3 APT20N60SC3 600V 20.7A 0.190Ω Super Junction MOSFET D3PAK TO-247 COOLMOS Power Semiconductors • Ultra low RDS ON • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • TO-247 or Surface Mount D3PAK Package


    Original     		PDF APT20N60BC3 APT20N60SC3 O-247 O-247 APT17N80BC3

    SIPC69N60C2

    Abstract: No abstract text available
    Text: Preliminary SIPC69N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC69N60C2


    Original     		PDF SIPC69N60C2 Q67050A4073-A001 5443-N, SIPC69N60C2

    SIPC26N60C2

    Abstract: No abstract text available
    Text: Preliminary SIPC26N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC26N60C2


    Original     		PDF SIPC26N60C2 Q67050A4087-A001 5433N, SIPC26N60C2

    SIPC10N60S5

    Abstract: No abstract text available
    Text: Preliminary SIPC10N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC10N60S5


    Original     		PDF SIPC10N60S5 Q67050A4072-A001 5353-N, SIPC10N60S5

    SIPC10N60C2

    Abstract: No abstract text available
    Text: Preliminary SIPC10N60C2 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC10N60C2


    Original     		PDF SIPC10N60C2 Q67050A4090-A001 5353P, SIPC10N60C2

    SIPC06N60S5

    Abstract: Infineon CoolMOS
    Text: Preliminary SIPC06N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC06N60S5


    Original     		PDF SIPC06N60S5 5423N, SIPC06N60S5 Infineon CoolMOS

    5423S

    Abstract: SIPC06N60S5
    Text: Preliminary SIPC06N60S5 Fast CoolMOS TM Power Transistor FEATURES: • New revolutionary high voltage technology • Ultra low gate charge • Worlbest RDS on per chip area • Ultra low effective capacitances • Improved noise immunity Chip Type SIPC06N60S5


    Original     		PDF SIPC06N60S5 5423S, 5423S SIPC06N60S5