Untitled
Abstract: No abstract text available
Text: US1A Thru US1M Surface Mount Ultra Fast Rectifiers Features: * For Surface Mount Application * Glass Passivated Chip * Low Reverse Leakage Current * Low Forward Voltage Drop And High Current Capability * Ultra Fast Switching For High Efficiency * Plastic Meterial Has UL Flammability Classification 94V-0
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MIL-STD-202,
DO-214AC)
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sF10A400
Abstract: No abstract text available
Text: SF10A400HDS Ultra Fast Recovery Diode Applications PIN Connection • High speed swit ching and rect ificat ion • Sw it ching m ode power supply Features 4 • Ult ra- fast reverse recovery t im e: t rr = 30ns Max. • Low forward volt age & low reverse current
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SF10A400HDS
KSD-D6S001-001
sF10A400
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Untitled
Abstract: No abstract text available
Text: US1A Thru US1M Surface Mount Ultra Fast Rectifiers REVERSE VOLTAGE 50 TO 1000 VOLTS FORWARD CURRENT 1.0 AMPERE Features: * For Surface Mount Application * Glass Passivated Chip * Low Reverse Leakage Current * Low Forward Voltage Drop And High Current Capability
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MIL-STD-202,
DO-214AC)
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Untitled
Abstract: No abstract text available
Text: US1A Thru US1M Surface Mount Ultra Fast Rectifiers REVERSE VOLTAGE 50 TO 1000 VOLTS FORWARD CURRENT 1.0 AMPERE Features: * For Surface Mount Application * Glass Passivated Chip * Low Reverse Leakage Current * Low Forward Voltage Drop And High Current Capability
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MIL-STD-202,
DO-214AC)
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Untitled
Abstract: No abstract text available
Text: US1A Thru US1M Surface Mount Ultra Fast Rectifiers * “G” Lead Pb -Free REVERSE VOLTAGE 50 TO 1000 VOLTS FORWARD CURRENT 1.0 AMPERE Features: * For Surface Mount Application * Glass Passivated Chip * Low Reverse Leakage Current * Low Forward Voltage Drop And High Current Capability
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MIL-STD-202,
DO-214AC)
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ysi4
Abstract: No abstract text available
Text: TEMIC BYTI 15/200/400 T EL E FU N K E N Sem iconductors Ultra Fast Recovery Silicon Power Rectifier Features • M ultiple diffusion • Epitaxial - planar • Ultra fast forward recovery time • Ultra fast reverse recovery time • L ow reverse current •
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BYT115/200/400
ysi4
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T200V
Abstract: byt86
Text: Tem ic BYT86 S e m i c o n d u c t o r s Ultra Fast Recovery Silicon Power Rectifier Features • Multiple diffusion • High voltage • High current • Glass passivated junction • Ultra fast forward recovery time • Ultra fast reverse recovery time Applications
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BYT86
BYT86-600
BYT86-800
BYT86-1000
12-Dec-94
T200V
byt86
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TO-220-AR
Abstract: Ultra Fast Rectifiers MUR1540 MUR1560
Text: Ultra Fast Rectifiers [03 m ultîcom p Designed fo r use in switching pow er supplies, inverters and as fre e w heeling diodes. These state-of-the-art devices have the following features: Ultra Fast R ecovery Rectifier Diodes Features: • High surge capacity.
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O-220A
TO-220-AR
Ultra Fast Rectifiers
MUR1540
MUR1560
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Untitled
Abstract: No abstract text available
Text: UF3001 - UF3007 3.0A ULTRA-FAST RECTIFIER Features Diffused Junction Ultra-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 150A Peak Low Reverse Leakage Current Plastic Material: UL Flammability
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UF3001
UF3007
IL-STD-202,
DO-201
10QNI
DS25004
UF3001
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Untitled
Abstract: No abstract text available
Text: UG1001 -UG1005 1.0A ULTRA-FAST GLASS PASSIVATED RECTIFIER Features Glass Passivated Die Construction Diffused Junction Ultra-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak Low Reverse Leakage Current
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UG1001
-UG1005
DO-41
IL-STD-202,
60HzT
DS27008
UG1005
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Untitled
Abstract: No abstract text available
Text: Tem ic BYT85 TELEFU NK EN Semiconductors Ultra Fast Recovery Silicon Power Rectifier Features • M u ltip le d iffu sio n • H igh v o lta g e • H igh current • G la ss p a ssiv a ted ju n ctio n • Ultra fast forw ard reco v ery tim e • Ultra fast reverse r eco v ery tim e
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BYT85
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MARKING FZ
Abstract: US1A-US1M
Text: U S 1A -U S 1M VISHAY 1.0A SURFACE MOUNT ULTRA-FAST RECTIFIER LITEM ZI y POWER SEMICONDUCTOR Features Glass Passivated Die Construction Diffused Junction Ultra-Fast Recovery Time for High Efficiency Low Forward Voltage Drop, High Current Capability, and Low Power Loss
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MIL-STD-202,
DS16008
MARKING FZ
US1A-US1M
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RECTIFIER marking UG 08
Abstract: UG10 UG1001 UG1002 UG1003 UG1004 UG1005
Text: r w \T ^ r r I N C O R P O R A T E UG1001 - UG1005 1.0A ULTRA-FAST GLASS PASSIVATED RECTIFIER D Features Glass Passivated Die Construction Diffused Junction Ultra-Fast Switching for High Efficiency High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 30A Peak
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UG1001
UG1005
MIL-STD-202,
DO-41
DS27008
UG1005
RECTIFIER marking UG 08
UG10
UG1002
UG1003
UG1004
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9956B
Abstract: c832 c836 diode c832 IRGTI140U06 DIODE 2FL C834 power
Text: PD-9.956B kitemational [tor]Rectifier IRGTI140U06 "HALF-BRIDGE“ IGBTINT-A-PAK Ultra-fast Speed IGBT •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all ‘tail"
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25KHz
100KHz
IRGTI140U06
C-836
9956B
c832
c836
diode c832
IRGTI140U06
DIODE 2FL
C834 power
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 60A/200V/trr : 50nsec KCF60A20E FEATURES o Similar to TO-247AC x 2 Case ODual Diodes-Cathode Common o Ultra-Fast Recovery o L ow Forward Voltage Drop O High Surge Capability Approx. M A X IM U M R A T IN G S N e t W e ig h t : 30 Grams
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0A/200V/trr
50nsec
KCF60A20E
O-247AC
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL 2FUA050 , thru SEMICONDUCTOR INC 2FUA1000 ULTRA-FAST RECOVERY SINGLE PHASE BRIDGE FEATURES: Ultrafast 25, 50, and 75 Nanosecond Recover Times Low Forward Voltage - Low Leakage Current Reverse Voltage to 1000 Volts Surge overload rating - 35 amperes peak
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2FUA050
2FUA1000
MIL-M-24519C
MIL-STD-202
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IF330
Abstract: F330 F350 UF330 UF340 UF350
Text: Ultra Fast R ecovery R e ctifie rs UF330 - UF350 X : Dim. Inches Minimum A B C D .188 1.00 .285 .046 M illim eter Maximum Minimum .260 - .375 .056 4.78 25.4 7.24 1.17 Maximum Notes 6.50 Dia. 9.52 1.42 Dia. - PLASTIC D0201AD -II-: Microsemi Catalog Number
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IF330
D0201
UF330
UF340
UF350
F330
F350
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F310
Abstract: F320 UF310 UF315 UF320
Text: Ultra Fast R ecovery R e ctifie rs UF310 UF320 X : Dim. Inches Minimum A B C D .188 1.00 .285 .046 M illim e te r Maximum Minimum .260 - .375 .056 4.78 25.4 7.24 1.17 Maximum Notes 6.50 Dia. 9.52 1.42 Dia. - PLASTIC D0201AD -II-: Microsemi Catalog Number
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D0201
UF310
UF315
UF320
F310
F320
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F530
Abstract: UF530 UF540 UF550
Text: Ultra Fast R ecovery R e ctifie rs UF530 - UF550 X : Dim. Inches Minimum A B C D .188 1.00 .285 .046 M illim e te r Maximum Minimum .260 - .375 .056 4.78 25.4 7.24 1.17 Maximum Notes 6.50 Dia. 9.52 1.42 Dia. - PLASTIC D0201AD -II-: Microsemi Catalog Number
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D0201
UF530
UF540
UF550
F530
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uf380
Abstract: F360 F380 UF360 UF370
Text: Ultra Fast R ecovery R e ctifie rs UF360 - UF380 X : Dim. Inches Minimum A B C D .188 1.00 .285 .046 M illim e te r Maximum Minimum .260 - .375 .056 4.78 25.4 7.24 1.17 Maximum Notes 6.50 Dia. 9.52 1.42 Dia. - PLASTIC D0201AD -II-: Microsemi Catalog Number
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IF360
D0201
UF360
UF370
UF380
F360
F380
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Untitled
Abstract: No abstract text available
Text: Œ HFA1100, HFA1120 Ultra High-Speed Current Feedback Amplifiers May1994 Features Description • Low Distortion 3 0 M H z . -56dBc • -3dB B a n d w id th . 850MHz • Very Fast Slew R a te . 2300V/|is
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HFA1100,
HFA1120
My1994
-56dBc
850MHz
1-800-4-HARRIS
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ITO-220
Abstract: URF2005 URF2020
Text: ÆàMOSPEC URF2005 th ru URF2020 Switchmode Full Plastic Dual Ultrafast Power Rectifiers ULTRA FAST RECTIFIERS . D esigned for use in switching power supplies, invertors and as free w heeling diodes. These state-of-the-art devices have the following features:
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URF2005
URF2020
URF20
10Amp
ITO-220
ITO-220
URF2020
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diode 47c
Abstract: No abstract text available
Text: FAST RECOVERY DIODE 60A/600V/trr : 60nsec KCF60A60E FEATURES o Similar to TO-247AC x 2 Case ODual Diodes-Cathode Common o Ultra-Fast Recovery o L ow Forward Voltage Drop o High Surge Capability A p p ro x . M A X IM U M R A T IN G S \ N e t W e ig h t : 30 G ram s
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O-247AC
0A/600V/trr
60nsec
KCF60A60E
KCF60A60E
diode 47c
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Untitled
Abstract: No abstract text available
Text: FAST RECOVERY DIODE MODULE PC50F2 5 0A /200V /trr:80nsec FEATURES o Isolated Base oD ual Diodes - Cathode Common o Ultra-Fast Recovery o High Surge Capability 7 11271 ^ f L, 2 l.5 l.H n t 65 I A L L D IM E N S IO N S A R E N O M IN A L . Î PC50F Dimesnions in mm (Inches)
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/200V
80nsec
PC50F2
PC50F
PC50F2
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