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    Untitled

    Abstract: No abstract text available
    Text: Low cost Single Mode VCSEL 850nm,TO46 Ideal circular gaussian beam ‹ Built-in ESD protection structure ‹ High reliability, >105 h @ 50°C, 2 mA ‹ INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS PARAMETER


    Original     		PDF 850nm E2000

    ULM850-OM-TN-S46XOP

    Abstract: ULM Photonics E2000 T046 TO46 ULM850-OM-TN-S46FOP SM 850nm laser vcsel SM 850nm laser vcsel ulm ULM Photonics GmbH
    Text: Low cost Single Mode VCSEL 850nm,TO46 Ideal circular gaussian beam ‹ Built-in ESD protection structure ‹ High reliability, >105 h @ 50°C, 2 mA ‹ INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS PARAMETER


    Original     		PDF 850nm E2000 ULM850-OM-TN-S46XOP ULM Photonics T046 TO46 ULM850-OM-TN-S46FOP SM 850nm laser vcsel SM 850nm laser vcsel ulm ULM Photonics GmbH

    ULM Photonics

    Abstract: ULM852-01-TN-S46FTT laser diode 6 GHz ULM Photonics precautions ntc thermistor E2 ULM780-01-TN-S46FOP
    Text: Single Mode VCSEL 780±1 nm TO46 & TEC Vertical Cavity Surface-Emitting Laser internal TEC and Thermistor ‹ Narrow linewidth ‹ 2nm tunability with TEC ‹ High performance and reliability ‹ ‹ INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 10 Gbps PIN Photodiode Chip GaAs PIN Photodiode 1 low bias voltage, low dark current 1 up to 10 Gbps speed 1 e.g. for GbE, fiber channel data transmission 1 Preliminary ELECTRO-OPTICAL CHARACTERISTICS Chip temperature = 25°C unless otherwise stated PARAMETER


    Original     		PDF 50Ohm ULMPIN-10-TT-N0101U ULMPIN-10-TT-N0112U ULMPIN-10-TT-N0104U

    Untitled

    Abstract: No abstract text available
    Text: 14 Gbps PIN Photodiode 1x4 1x12 Chip GaAs PIN Photodiode  Low bias voltage, low dark current  High speed modulation up to 14 Gbps  Suitable for wire bond and flipchip process  E.g. for FDR InfiniBand data transmission  Preliminary ELECTRO-OPTICAL CHARACTERISTICS


    Original     		PDF 50Ohm ULMPIN-14-TT-N0104Y ULMPIN-14-TT-N0112Y

    ULMPIN-14-TT-N0101U

    Abstract: No abstract text available
    Text: 14 Gbps PIN Photodiode Chip GaAs PIN Photodiode 1 Low bias voltage, low dark current 1 High speed modulation up to 14 Gbps 1 E.g. for FDR InfiniBand data transmission 1 Preliminary ELECTRO-OPTICAL CHARACTERISTICS Chip temperature = 25°C unless otherwise stated


    Original     		PDF 50Ohm ULMPIN-14-TT-N0101U ULMPIN-14-TT-N0112U ULMPIN-14-TT-N0104U ULMPIN-14-TT-N0101U

    Untitled

    Abstract: No abstract text available
    Text: Single mode & polarization VCSEL 850nm 1 1 1 Single-mode & stable linear polarization Ultra low current requirement and power consumption Ideally for wireless laser mouse and trackball application in mobile phone INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE


    Original     		PDF 850nm ULM850-L2-PL-S0101U 200x200x150

    6MA80

    Abstract: No abstract text available
    Text: 5 Gbps 850 nm VCSEL chip Vertical Cavity Surface-Emitting Laser 1 High speed up to 5 Gbps 1 Unsealed 85% r.H. / 85°C certified 1 Top side emission 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS T = 25°C unless otherwise stated


    Original     		PDF VCSEL-ULM850-05-1x1chip-LCDC-V01 ULM850-05-TN-N0101L 6MA80

    Untitled

    Abstract: No abstract text available
    Text: 4 Gbps PIN Photodiode Chip GaAs PIN Photodiode 1 low bias voltage, low dark current 1 up to 4.25 Gbps speed 1 e.g. for GbE, fiber channel data transmission 1 Preliminary ELECTRO-OPTICAL CHARACTERISTICS PARAMETER Responsivity Active area diameter SYMBOL UNITS


    Original     		PDF PIN-ULM-04-TN ULMPIN-04-TN-U0101U ULMPIN-04-TN-U0112U ULMPIN-04-TN-U0104U

    Untitled

    Abstract: No abstract text available
    Text: Single mode & polarization VCSEL 850nm 1 1 1 Single-mode & stable linear polarization at high output power up to 1.4mW Ultra low current requirement and power consumption Ideally for wireless laser mouse and trackball application in mobile phone INVISIBLE LASER RADIATION


    Original     		PDF 850nm ULM850-A4-PL-S0101U 200x200x150

    Untitled

    Abstract: No abstract text available
    Text: Single mode & polarization VCSEL 850nm,TO46, 0.7mW Single-mode & single-polarization 1 Ideal circular gaussian beam 1 Stable Polarization 1 Built-in ESD protection structure 1 High reliability, 10 years @ 85°C 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE


    Original     		PDF 850nm ULM850-PM-PL-S46XZP ULM850-PM-PL-S46FZP

    vcsel SMD

    Abstract: No abstract text available
    Text: 12mW VCSEL 850nm SMD Package Vertical Cavity Surface-Emitting Laser 1 SMD package 1 12mW cw output power 1 High performance and reliability 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT Prototype ELECTRO-OPTICAL CHARACTERISTICS SMD package


    Original     		PDF 850nm ULM850-01-TT-HSMDCA vcsel SMD

    VCSEL-ULM850-14-TT-F

    Abstract: No abstract text available
    Text: 14 Gbps VCSEL 850 nm 1x4 1x12 chip Vertical Cavity Surface-Emitting Laser  Cathode on top side  Unsealed 85% r.H./85°C certified  Suitable for wirebond and flipchip process  Preliminary ELECTRO-OPTICAL CHARACTERISTICS Chip Temperature = 25°C unless otherwise stated.


    Original     		PDF Ith25 ULM850-14-TT-N0104Y ULM850-14-TT-N0112Y VCSEL-ULM850-14-TT-F

    ULM850-B2-PL-S46FZP

    Abstract: No abstract text available
    Text: Single mode & polarization VCSEL 850nm,TO46, 2.0mW Single-mode & single-polarization 1 Ideal circular gaussian beam 1 Stable Polarization 1 Built-in ESD protection structure 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT Preliminary


    Original     		PDF 850nm ULM850-B2-PL-S46XZP ULM850-B2-PL-S46FZP ULM850-B2-PL-S0101U ULM850-B2-PL-S46FZP

    vcsel SMD

    Abstract: ULM855-G2-TN-SSMDTL
    Text: Single Mode VCSEL 850nm SMD package 1 without encapsulation 1 ESD protection 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS T=20°C unless otherw ise stated PARAMETER Emission wavelength SYMBOL 1R UNITS


    Original     		PDF 850nm ULM855-G2-TN-SSMDTL 855nm vcsel SMD ULM855-G2-TN-SSMDTL

    R/ULM850-05-TT-C0101D

    Abstract: No abstract text available
    Text: 5 Gbps VCSEL 850 nm 1x1/1x4/12 chip    For flip chip stud bump and wire bond Unsealed 85% r.H./85°C certified 1, 4, or 12 channel array configuration INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT Preliminary ELECTRO-OPTICAL CHARACTERISTICS


    Original     		PDF 1x1/1x4/12 ULM850-05-TT-C0101D ULM850-05-TT-C0104D ULM850-05-TT-C0112D 235x335x150 985x335x150 2985x335x150 R/ULM850-05-TT-C0101D

    ULM852-01-TN-S46FTT

    Abstract: No abstract text available
    Text: 852±1/ ±10 nm Single Mode VCSEL TO46 & TEC Vertical Cavity Surface-Emitting Laser 1 internal TEC, Thermistor, ESD protection diode 1 Narrow linewidth 1 2nm tunability with TEC 1 High performance and reliability 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE


    Original     		PDF ULM852-01-TN-S46FTT ULM852-10-TN-S46FTT ULM852-01-TN-S46FZP ULM852-10-TN-S46FZP ULM852-01-TN-S46FTT

    Untitled

    Abstract: No abstract text available
    Text: 10 Gbps VCSEL 850 nm 1x1/4/12 chip Vertical Cavity Surface-Emitting Laser 1 Cathode on top or substrate side 1 Unsealed 85% r.H./85°C certified 1 1x1, 1x4, 1x12 chips 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT Preliminary ELECTRO-OPTICAL CHARACTERISTICS


    Original     		PDF 1x1/4/12 ULM850-10-TT-N0101U ULM850-10-TT-N0104U ULM850-10-TT-N0112U 250x250x150 1000x250x150 3000x250x150 ULM850-10-TN-N0101U ULM850-10-TN-N0104U ULM850-10-TN-N0112U

    Untitled

    Abstract: No abstract text available
    Text: 3mW / 6mW VCSEL SMA Receptacle / Chip Vertical Cavity Surface-Emitting Laser  3mW / 6mW peak power  >2,5 Gbps speed  e.g. for storage, free space, sensing  other wavelengths available, e.g. for WDM  INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE


    Original     		PDF ULM850-00-TT-HSMAOP ULM850-00-TT-H56BOP ULM850-00-TT-H0101U

    Untitled

    Abstract: No abstract text available
    Text: Single Mode VCSEL 780±1 nm TO46 & TEC Vertical Cavity Surface-Emitting Laser internal TEC and Thermistor ‹ Narrow linewidth ‹ 2nm tunability with TEC ‹ High performance and reliability ‹ ‹ INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT


    Original     		PDF E2000

    ULM850-14-TT-N0112U

    Abstract: ULM850-14-TT-N0101U
    Text: 14 Gbps VCSEL 850 nm 1x1/4/12 chip Vertical Cavity Surface-Emitting Laser 1 Cathode on top side 1 Unsealed 85% r.H./85°C certified 1 1x1, 1x4, 1x12 chips 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT Preliminary ELECTRO-OPTICAL CHARACTERISTICS


    Original     		PDF 1x1/4/12 ULM850-14-TT-N0101U ULM850-14-TT-N0112U ULM850-14-TT-N0104U ULM850-14-TT-N0112U ULM850-14-TT-N0101U

    ULM760-01-TN-S46FZP

    Abstract: No abstract text available
    Text: 760±1/ ±3 nm Single Mode VCSEL TO46 & TEC Vertical Cavity Surface-Emitting Laser 1 internal TEC and Thermistor 1 Narrow linewidth 1 2nm tunability with TEC 1 ESD protection diode 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT Preliminary


    Original     		PDF ULM760-01-TN-S46FTT ULM760-03-TN-S46FTT ULM760-01-TN-S46FZP ULM760-03-TN-S46FZP ULM760-01-TN-S46FZP

    Untitled

    Abstract: No abstract text available
    Text: 948±1 nm Single Mode VCSEL TO46 & TEC internal TEC and Thermistor 1 Narrow linewidth 1 2nm tunability with TEC 1 High performance and reliability 1 ESD protection diode 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT Preliminary ELECTRO-OPTICAL CHARACTERISTICS


    Original     		PDF ULM948-01-TN-S46FTT ULM948-03-TN-S46FTT ULM948-01-TN-S46FZP ULM948-03-TN-S46FZP

    Untitled

    Abstract: No abstract text available
    Text: 12mW / 24mW VCSEL SMA Receptacle / Chip Vertical Cavity Surface-Emitting Laser  12mW / 20mW / 24mW peak power  >2,5 Gbps speed  e.g. for storage, free space, sensing  other wavelengths available, e.g. for WDM  INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE


    Original     		PDF ULM850-02-TT-HSMAOP ULM850-02-TT-HSMAOP ULM850-02-TT-H56BOP ULM850-02-TT-H0101U