ULM Photonics
Abstract: 10Gbps-VCSEL 850 VCSEL ULM VCSEL 850 nm ULM Photonics GmbH
Text: V3 850 nm multimode 1 x n, 10 Gbps VCSEL for high speed data transmission • • • • Warning: High speed up to 10 Gb/s Low current and voltage Lowest power consumption Single devices and linear arrays Laser radiation, avoid exposure to beam. Class 3B laser product,
|
Original
|
PDF
|
250x250
O18/46
ULM Photonics
10Gbps-VCSEL
850 VCSEL ULM
VCSEL 850 nm
ULM Photonics GmbH
|
ULM Photonics
Abstract: ULM 1000 1506 Laser wavelength 1506 nm 11 1506 89081 ULM Photonics GmbH
Text: 20% 10% 0% Array 1506 6 3 4 2 2 1 32 VCSELs λ = 968 nm 2 4 6 8 Spectral output power 10 dB / div 30% 4 8 Voltage (V) Conversion efficiency 40% Optical output power (mW) ULM 4x8 array characteristic 10 Array 1506 Laser 11 I = 3 mA 955 960 965 970 975 980
|
Original
|
PDF
|
|
ULM Photonics
Abstract: 10Gbps-VCSEL ULM Photonics GmbH
Text: V2 850 nm multimode 1 x n, 10 Gbps VCSEL for high speed data trans • • • • • Warning: High speed up to 10 Gb/s High reliability Low current and voltage Lowest power consumption Single devices and linear arrays Laser radiation, avoid exposure to beam.
|
Original
|
PDF
|
250x250
O18/46
ULM Photonics
10Gbps-VCSEL
ULM Photonics GmbH
|
ULM Photonics
Abstract: laser 850 nm ULM Photonics GmbH
Text: V3 850 nm multimode 2,5 / 3,125 / 5 Gbps NxM VCSEL array for high speed data transmission • High speed up to 5 Gb/s • Lowest threshold current • Lowest power Warning: Laser radiation, avoid exposure to beam. Class 3B laser product, potential eye hazard.
|
Original
|
PDF
|
250x250
D-89081
ULM Photonics
laser 850 nm
ULM Photonics GmbH
|
850-nm-multimode-VCSEL
Abstract: VCSEL 850 nm ULM Photonics vcsel 850 vcsel nm 850 VCSEL ULM VCSEL 40G ULM Photonics GmbH
Text: V2 850 nm multimode VCSEL 2,5 / 3,125 / 5 Gbps for high speed data transmission • High speed up to 5 Gb/s • Lowest threshold current • Lowest power consumption Warning: Laser radiation, avoid exposure to beam. Class 3B laser product, potential eye hazard.
|
Original
|
PDF
|
|
ULM Photonics
Abstract: VCSEL array ULM Photonics GmbH
Text: Monolithic VCSEL array for highly parallel data transport • Layout for direct flip-chip bonding and substrate removal • Custom-designed array layout • Lowest power consumption • Lowest threshold current Threshold voltage UTH V 1.5 1.8 2.0 ELECTRO-OPTICAL-CHARACTERISTICS, CHIP FLIP-CHIP MOUNTED
|
Original
|
PDF
|
850nm
ULM Photonics
VCSEL array
ULM Photonics GmbH
|
VCSEL array, 850nm flip
Abstract: ULM Photonics Monolithic-VCSEL-array VCSEL array, 850nm, flip chip VCSEL array, 850nm vcsel array ULM Photonics GmbH
Text: V3 Monolithic VCSEL array to FLIP CHIP for highly parallel data transport • Layout for direct flip-chip bonding and substrate removal • Custom-designed array layout • Lowest power consumption • Lowest threshold current Threshold voltage UTH V 1.5 1.8
|
Original
|
PDF
|
850nm
VCSEL array, 850nm flip
ULM Photonics
Monolithic-VCSEL-array
VCSEL array, 850nm, flip chip
VCSEL array, 850nm
vcsel array
ULM Photonics GmbH
|
Untitled
Abstract: No abstract text available
Text: Low cost Single Mode VCSEL 850nm,TO46 Ideal circular gaussian beam Built-in ESD protection structure High reliability, >105 h @ 50°C, 2 mA INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS PARAMETER
|
Original
|
PDF
|
850nm
E2000
|
ULM850-OM-TN-S46XOP
Abstract: ULM Photonics E2000 T046 TO46 ULM850-OM-TN-S46FOP SM 850nm laser vcsel SM 850nm laser vcsel ulm ULM Photonics GmbH
Text: Low cost Single Mode VCSEL 850nm,TO46 Ideal circular gaussian beam Built-in ESD protection structure High reliability, >105 h @ 50°C, 2 mA INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS PARAMETER
|
Original
|
PDF
|
850nm
E2000
ULM850-OM-TN-S46XOP
ULM Photonics
T046
TO46
ULM850-OM-TN-S46FOP
SM 850nm laser vcsel
SM 850nm laser vcsel ulm
ULM Photonics GmbH
|
ULM Photonics
Abstract: ULM852-01-TN-S46FTT laser diode 6 GHz ULM Photonics precautions ntc thermistor E2 ULM780-01-TN-S46FOP
Text: Single Mode VCSEL 780±1 nm TO46 & TEC Vertical Cavity Surface-Emitting Laser internal TEC and Thermistor Narrow linewidth 2nm tunability with TEC High performance and reliability INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: 10 Gbps PIN Photodiode Chip GaAs PIN Photodiode 1 low bias voltage, low dark current 1 up to 10 Gbps speed 1 e.g. for GbE, fiber channel data transmission 1 Preliminary ELECTRO-OPTICAL CHARACTERISTICS Chip temperature = 25°C unless otherwise stated PARAMETER
|
Original
|
PDF
|
50Ohm
ULMPIN-10-TT-N0101U
ULMPIN-10-TT-N0112U
ULMPIN-10-TT-N0104U
|
Untitled
Abstract: No abstract text available
Text: 14 Gbps PIN Photodiode 1x4 1x12 Chip GaAs PIN Photodiode Low bias voltage, low dark current High speed modulation up to 14 Gbps Suitable for wire bond and flipchip process E.g. for FDR InfiniBand data transmission Preliminary ELECTRO-OPTICAL CHARACTERISTICS
|
Original
|
PDF
|
50Ohm
ULMPIN-14-TT-N0104Y
ULMPIN-14-TT-N0112Y
|
ULMPIN-14-TT-N0101U
Abstract: No abstract text available
Text: 14 Gbps PIN Photodiode Chip GaAs PIN Photodiode 1 Low bias voltage, low dark current 1 High speed modulation up to 14 Gbps 1 E.g. for FDR InfiniBand data transmission 1 Preliminary ELECTRO-OPTICAL CHARACTERISTICS Chip temperature = 25°C unless otherwise stated
|
Original
|
PDF
|
50Ohm
ULMPIN-14-TT-N0101U
ULMPIN-14-TT-N0112U
ULMPIN-14-TT-N0104U
ULMPIN-14-TT-N0101U
|
Untitled
Abstract: No abstract text available
Text: Single mode & polarization VCSEL 850nm 1 1 1 Single-mode & stable linear polarization Ultra low current requirement and power consumption Ideally for wireless laser mouse and trackball application in mobile phone INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE
|
Original
|
PDF
|
850nm
ULM850-L2-PL-S0101U
200x200x150
|
|
|
Untitled
Abstract: No abstract text available
Text: 4 Gbps PIN Photodiode Chip GaAs PIN Photodiode 1 low bias voltage, low dark current 1 up to 4.25 Gbps speed 1 e.g. for GbE, fiber channel data transmission 1 Preliminary ELECTRO-OPTICAL CHARACTERISTICS PARAMETER Responsivity Active area diameter SYMBOL UNITS
|
Original
|
PDF
|
PIN-ULM-04-TN
ULMPIN-04-TN-U0101U
ULMPIN-04-TN-U0112U
ULMPIN-04-TN-U0104U
|
Untitled
Abstract: No abstract text available
Text: Single mode & polarization VCSEL 850nm 1 1 1 Single-mode & stable linear polarization at high output power up to 1.4mW Ultra low current requirement and power consumption Ideally for wireless laser mouse and trackball application in mobile phone INVISIBLE LASER RADIATION
|
Original
|
PDF
|
850nm
ULM850-A4-PL-S0101U
200x200x150
|
Untitled
Abstract: No abstract text available
Text: Single mode & polarization VCSEL 850nm,TO46, 0.7mW Single-mode & single-polarization 1 Ideal circular gaussian beam 1 Stable Polarization 1 Built-in ESD protection structure 1 High reliability, 10 years @ 85°C 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE
|
Original
|
PDF
|
850nm
ULM850-PM-PL-S46XZP
ULM850-PM-PL-S46FZP
|
vcsel SMD
Abstract: No abstract text available
Text: 12mW VCSEL 850nm SMD Package Vertical Cavity Surface-Emitting Laser 1 SMD package 1 12mW cw output power 1 High performance and reliability 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT Prototype ELECTRO-OPTICAL CHARACTERISTICS SMD package
|
Original
|
PDF
|
850nm
ULM850-01-TT-HSMDCA
vcsel SMD
|
VCSEL-ULM850-14-TT-F
Abstract: No abstract text available
Text: 14 Gbps VCSEL 850 nm 1x4 1x12 chip Vertical Cavity Surface-Emitting Laser Cathode on top side Unsealed 85% r.H./85°C certified Suitable for wirebond and flipchip process Preliminary ELECTRO-OPTICAL CHARACTERISTICS Chip Temperature = 25°C unless otherwise stated.
|
Original
|
PDF
|
Ith25
ULM850-14-TT-N0104Y
ULM850-14-TT-N0112Y
VCSEL-ULM850-14-TT-F
|
ULM850-B2-PL-S46FZP
Abstract: No abstract text available
Text: Single mode & polarization VCSEL 850nm,TO46, 2.0mW Single-mode & single-polarization 1 Ideal circular gaussian beam 1 Stable Polarization 1 Built-in ESD protection structure 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT Preliminary
|
Original
|
PDF
|
850nm
ULM850-B2-PL-S46XZP
ULM850-B2-PL-S46FZP
ULM850-B2-PL-S0101U
ULM850-B2-PL-S46FZP
|
ULM850-PM-TN-S46XZP
Abstract: No abstract text available
Text: Low cost Single Mode VCSEL 850nm,TO46, 1.0mW Ideal circular gaussian beam 1 Built-in ESD protection structure 1 High reliability, 10 years @ 85°C 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS T=20°C unless otherw ise stated
|
Original
|
PDF
|
850nm
ULM850-PM-TN-S46XZP
ULM850-PM-TN-S46FZP
ULM850-PM-TN-S46XZP
|
vcsel SMD
Abstract: ULM855-G2-TN-SSMDTL
Text: Single Mode VCSEL 850nm SMD package 1 without encapsulation 1 ESD protection 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT ELECTRO-OPTICAL CHARACTERISTICS T=20°C unless otherw ise stated PARAMETER Emission wavelength SYMBOL 1R UNITS
|
Original
|
PDF
|
850nm
ULM855-G2-TN-SSMDTL
855nm
vcsel SMD
ULM855-G2-TN-SSMDTL
|
R/ULM850-05-TT-C0101D
Abstract: No abstract text available
Text: 5 Gbps VCSEL 850 nm 1x1/1x4/12 chip For flip chip stud bump and wire bond Unsealed 85% r.H./85°C certified 1, 4, or 12 channel array configuration INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE CLASS 3B LASER PRODUCT Preliminary ELECTRO-OPTICAL CHARACTERISTICS
|
Original
|
PDF
|
1x1/1x4/12
ULM850-05-TT-C0101D
ULM850-05-TT-C0104D
ULM850-05-TT-C0112D
235x335x150
985x335x150
2985x335x150
R/ULM850-05-TT-C0101D
|
ULM852-01-TN-S46FTT
Abstract: No abstract text available
Text: 852±1/ ±10 nm Single Mode VCSEL TO46 & TEC Vertical Cavity Surface-Emitting Laser 1 internal TEC, Thermistor, ESD protection diode 1 Narrow linewidth 1 2nm tunability with TEC 1 High performance and reliability 1 INVISIBLE LASER RADIATION AVOID BEAM EXPOSURE
|
Original
|
PDF
|
ULM852-01-TN-S46FTT
ULM852-10-TN-S46FTT
ULM852-01-TN-S46FZP
ULM852-10-TN-S46FZP
ULM852-01-TN-S46FTT
|
