BY206
Abstract: C102F BZY88-C3V3 BLW34 BZY88C-3V3 100A-2RO-C-PX-50 uhf amplifier design Transistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW34 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in
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BLW34
BY206
C102F
BZY88-C3V3
BLW34
BZY88C-3V3
100A-2RO-C-PX-50
uhf amplifier design Transistor
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capacitor 2200 uF
Abstract: philips resistor 2322 156 BLT82 UHF TRANSISTOR 2322 156 philips SMD ic catalogue 200B BC817 TRANSISTOR SMD L3 SMD TRANSISTOR L6
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT82 UHF power transistor Product specification 1996 Feb 05 Philips Semiconductors Product specification UHF power transistor BLT82 FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a
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BLT82
OT96-1
MAM227
capacitor 2200 uF
philips resistor 2322 156
BLT82
UHF TRANSISTOR
2322 156 philips
SMD ic catalogue
200B
BC817
TRANSISTOR SMD L3
SMD TRANSISTOR L6
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BLW33
Abstract: BY206 BZY88-C3V3 SOT122A BZY88C-3V3 application note blw33 BZY88 npn transistor dc 558
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW33 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in
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BLW33
BLW33
BY206
BZY88-C3V3
SOT122A
BZY88C-3V3
application note blw33
BZY88
npn transistor dc 558
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BY206
Abstract: BZY88 BZY88-C3V3 BLW32 BZY88C-3V3 2222 809 05003 MGP430
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW32 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in
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BLW32
BY206
BZY88
BZY88-C3V3
BLW32
BZY88C-3V3
2222 809 05003
MGP430
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BLW98
Abstract: blw98 transistor BY206 application note blw98 BY206 Equivalent uhf linear amplifier BD136 linear handbook 3 pin trimmer capacitors transistor blw98
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW98 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor BLW98 DESCRIPTION FEATURES: N-P-N silicon planar epitaxial transistor primarily intended for use in
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BLW98
BLW98
blw98 transistor
BY206
application note blw98
BY206 Equivalent
uhf linear amplifier
BD136
linear handbook
3 pin trimmer capacitors
transistor blw98
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222259116641
Abstract: 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module BLV859
Text: APPLICATION NOTE BLV859 UHF linear push-pull power transistor AN98013 Philips Semiconductors BLV859 UHF linear push-pull power transistor CONTENTS 1 ABSTRACT 2 INTRODUCTION 2.1 Amplifier Electrical design objectives 3 DESIGN OF THE AMPLIFIER 3.1 3.2 3.3 3.4
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BLV859
AN98013
SCA57
222259116641
222259016629
bvc62
AN98013
BD139 transistor circuit diagram
BLV589
c38 transistor
RG4M
UHF amplifier module
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin
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BFG10W/X
OT343N
MBK523
R77/01/pp11
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BC548 TRANSISTOR REPLACEMENT
Abstract: transistor BC548 Philips Capacitor RT5880 BC548 transistor bc548 bp HE bc548 BC548 transistor bc548 equivalent MBG431
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification 1995 Sep 22 NXP Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin
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BFG10W/X
OT343N
MBK523
R77/01/pp11
BC548 TRANSISTOR REPLACEMENT
transistor BC548
Philips Capacitor
RT5880
BC548
transistor bc548 bp
HE bc548
BC548 transistor
bc548 equivalent
MBG431
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U18 524
Abstract: 2SC4183 p 0368 mini IC 751 1124 U18 809
Text: DATA SHEET SILICON TRANSISTOR 2SC4183 RF AMPLIFIER FOR UHF TV TUNER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4183 is specifically designed for UHF RF amplifier applications. The 2SC4183 features high gain, low noise, and excellent forward
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2SC4183
2SC4183
U18 524
p 0368 mini
IC 751 1124
U18 809
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BLV862
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV862 UHF linear push-pull power transistor Preliminary specification File under Discrete Semiconductors, SC08a 1996 Jun 11 Philips Semiconductors Preliminary specification UHF linear push-pull power transistor FEATURES
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BLV862
SC08a
OT262B
SCA49
127041/1200/02/pp8
BLV862
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MGS956
Abstract: TRansistor CQ 648
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18040XL UHF power transistor Product specification 1999 Dec 06 Philips Semiconductors Product specification UHF power transistor LLE18040XL FEATURES PINNING - SOT437A • Emitter ballasting resistors for optimum temperature
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M3D159
LLE18040XL
OT437A
LLE18040XL
125002/01/pp12
MGS956
TRansistor CQ 648
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Philips Capacitor
Abstract: transistor BC548 RT5880 PHILIPS 4312 amplifier capacitor 1500 uF marking c8 transistor 2222 032 Philips 135 Capacitor Transistor Marking C3 bc548 equivalent
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG10W/X UHF power transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 22 Philips Semiconductors Product specification UHF power transistor BFG10W/X FEATURES DESCRIPTION • High efficiency
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BFG10W/X
OT343
Philips Capacitor
transistor BC548
RT5880
PHILIPS 4312 amplifier
capacitor 1500 uF
marking c8 transistor
2222 032
Philips 135 Capacitor
Transistor Marking C3
bc548 equivalent
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BLF542
Abstract: MBB778
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF542 UHF power MOS transistor Product specification File under Discrete Semiconductors, SC08b October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF542 PIN CONFIGURATION • High power gain
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BLF542
SC08b
MBB072
OT171
BLF542
MBB778
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BLF542
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLF542 UHF power MOS transistor Product specification October 1992 Philips Semiconductors Product specification UHF power MOS transistor FEATURES BLF542 PIN CONFIGURATION • High power gain • Easy power control halfpage
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BLF542
MBB072
OT171
BLF542
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Power UHF amplifiers 432 MHz
Abstract: Transistor 1308 transistor 1334 SOT634A BLF2022-125
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D792 BLF2022-125 UHF power LDMOS transistor Objective specification Supersedes data of 2002 April 02 2003 Mar 07 Philips Semiconductors Objective specification UHF power LDMOS transistor BLF2022-125 PINNING - SOT634A FEATURES
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M3D792
BLF2022-125
OT634A
SCA75
613524/03/pp8
Power UHF amplifiers 432 MHz
Transistor 1308
transistor 1334
SOT634A
BLF2022-125
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2SC2586
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in m illim eters The 2SC2586 is an NPN silicon epitaxial transistor designed for UHF-band medium power amplifiers.
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2SC2586
2SC2586
P11693EJ1V0DS00
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC 2586 is an NPN silicon epitaxial transistor designed for UHF-band medium pow er amplifiers.
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2SC2586
11693EJ1V0D
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC2586 is an NPN silicon epitaxial transistor designed ^ 9 .4 MAX. for UHF-band medium pow er amplifiers.
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2SC2586
2SC2586
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2SC2762
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC2762 NPN SILICON EPITAXIALTRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS The 2SC2762 is an NPN silicon epitaxial transistor designed for in millimeters UHF-band medium pow er amplifiers.
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2SC2762
2SC2762
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC2762 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC2762 is an NPN silicon epitaxial transistor designed for UHF-band medium power amplifiers.
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2SC2762
2SC2762
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2SC1070
Abstract: s parameters RF NPN POWER TRANSISTOR 100MHz Tma UHF
Text: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SC1070 B RF AMP. FOR UHF TV TUNER NPN SILICON TRANSISTOR DISK MOLD The 2SC1070(B) is specifically designed fo r UHF RF amplifier PACKAGE DIMENSIONS (Unit : mm) applications. The 2SC1070(B) features high power gain, low
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2SC1070
s parameters RF NPN POWER TRANSISTOR 100MHz
Tma UHF
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U18 524
Abstract: 2SC4183
Text: DATA SHEET SILICON TRANSISTOR 2SC4183 RF AMPLIFIER FOR UHF TV TUNER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4183 is specifically designed for UHF RF amplifier applica tions. The 2SC4183 features high gain, low noise, and excellent forward
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2SC4183
2SC4183
U18 524
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TRANSISTOR C 6090
Abstract: TRANSISTOR C 6090 npn 2N5090 E200C LC 7621 fh15
Text: 2 N 5090 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR TRANSISTOR NPN SILIC IU M , PLANAR EPITAXIAL UHF-VHF amplifier, frequency multiplier or oscillator Amplificateur, multiplicateur de fréquenceou oscillateur VHF-UHF v CEO 30 V 'c 0,4 A ^ 2 1 E ^ mA 10 - 200
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CB-27
TRANSISTOR C 6090
TRANSISTOR C 6090 npn
2N5090
E200C
LC 7621
fh15
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON TRANSISTOR 2SC4183 RF AMPLIFIER FOR UHF TV TUNER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4183 is specifically designed for UHF RF amplifier applica tions. The 2SC4183 features high gain, low noise, and excellent forward
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2SC4183
2SC4183
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