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    UHF MICROWAVE FET Search Results

    UHF MICROWAVE FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CO-213UHFMX20-005 Amphenol Cables on Demand Amphenol CO-213UHFMX20-005 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 5 ft Datasheet
    CO-213UHFMX20-050 Amphenol Cables on Demand Amphenol CO-213UHFMX20-050 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 50 ft Datasheet
    CO-213UHFMX20-100 Amphenol Cables on Demand Amphenol CO-213UHFMX20-100 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 100 ft Datasheet
    CO-213UHFMX20-010 Amphenol Cables on Demand Amphenol CO-213UHFMX20-010 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 10 ft Datasheet
    CO-213UHFMX20-015 Amphenol Cables on Demand Amphenol CO-213UHFMX20-015 UHF (PL-259) Male to UHF (PL-259) Male (RG213) 50 Ohm Coaxial Cable Assembly (High-Power / Low-Loss) 15 ft Datasheet

    UHF MICROWAVE FET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TPV3100

    Abstract: TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A
    Text: TABLE OF CONTENTS INTRODUCTION iii GENERAL INFORMATION iv QUALITY ASSURANCE & RELIABILITY v PRODUCT INDEX Alphanumeric vi RF POWER TRANSISTORS ! ! ! ! ! ! ! ! ! ! ! HF SSB HF MOSFETS VHF VHF & UHF MOSFETS UHF UHF MILITARY PULSED AVIONICS PULSED RADAR CW MICROWAVE


    Original     		twF150-50F HF150-50S HF250-50 HF100-28 HF220-28 HF220-50 TVU014 HF75-50S ASAT25 ASI4003 TPV3100 TP3024A HF power amplifier TPV3100 PT9783 MRF466 mrf4070 tp9383 tp2304 mrf433 MRF492A PDF

    mitsubishi mgf

    Abstract: DCS1800 DCS1900 MGF7168C PCS1900 33dBm
    Text: MITSUBISHI SEMICONDUCTOR<GaAsMMIC> MGF7168C Technical Note UHF BAND GaAs POWER AMPLIFIER Specifications are subject to change without notice. DESCRIPTION PIN CONFIGURATION TOP VIEW MGF7168C is a monolithic microwave integrated circuit for use in UHF-band power amplifier.


    Original     		MGF7168C MGF7168C 33dBm 1785MHz 1910MHz 1250mA mitsubishi mgf DCS1800 DCS1900 PCS1900 33dBm PDF

    SU25

    Abstract: SU50B10LS
    Text: MICROWAVE TECHNOLOGY bb E D • bl241DD DQQD4E1 lb 3 HMRIilV SST SERIES SU/S VHF/UHF SILICON POWER FETS 10 TO 120 WATTS, 10MHz-500MHz MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 lds[A] FEATURES • N-CHANNEL JFET, DEPLETION MODE


    OCR Scan     		bl241DD 10MHz-500MHz BU120010LS SU25 SU50B10LS PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE TECHNOLOGY 37E biam oG oooam? 5 D IMRUV SST SERIES SH/G VHF/UHF SILICON POWER FETS T O ^ - O Í 10 T 0 120 WATTS, 10MHz-1000MHz MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX 415-651-2208 lds[A] FEATURES • N-CHANNEL JFET, DEPLETION MODE


    OCR Scan     		10MHz-1000MHz FAX415-651-2208 PDF

    uhf microwave fet

    Abstract: SH100D10LG SH120D10LG SH15A10LG SH25A10LG SH25B10LG SH50B10LG SH75D10LG SH80C10LG
    Text: MICROWAVE TECHNOLOGY 37E D • blSMlOO ODQOLM? S ■ MRtdV SST SERIES SH/G VHF/UHF SILICON POWER FETS 1 ^ 3 9 - 0 f 10 TO 120 WATTS, 10MHz-1000MHz * MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX 415-651-2208 lds[A] FEATURES • N-CHANNEL JFET, DEPLETION MODE


    OCR Scan     		P39-0 10MHz-1000MHz SH80C10LG SH100D10LG SH120D10LG uhf microwave fet SH15A10LG SH25A10LG SH25B10LG SH50B10LG SH75D10LG PDF

    Untitled

    Abstract: No abstract text available
    Text: MICROWAVE TECHNOLOGY 37E.D • b l 2 4 1 0 0 0 0 0 0 1 4 3 Ô H MRÜ1V SST SERIES SU/G Mm ks VHF/UHF SILICON POWER FETS 10 TO 120 WATTS, 10MHz-500MHz MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX415-651-2208 T 'S - T - o i lds[A]


    OCR Scan     		10MHz-500MHz FAX415-651-2208 SU120012TQ PDF

    ATF10236

    Abstract: FET K 2611 TRANSISTOR BD 137-10 AGILENT 9988 microstripline ATF-10136 transistor equivalent 2274 table chart ATF-10736 HP346A MSA-0686
    Text: Using the ATF-10236 in Low Noise Amplifier Applications in the UHF Through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t


    Original     		ATF-10236 frequen058 5963-3780E 5966-0166E ATF10236 FET K 2611 TRANSISTOR BD 137-10 AGILENT 9988 microstripline ATF-10136 transistor equivalent 2274 table chart ATF-10736 HP346A MSA-0686 PDF

    ATF-10736

    Abstract: AN-G005 ATF10236 ATF-10236 ATF10136 ATF-10136 HP346A MSA-0686 TK11650U TL05
    Text: Using the ATF-10236 in Low Noise Amplifier Applications in␣ the UHF through 1.7 GHz Frequency Range Application Note 1076 Introduction GaAs FET devices are typically used in low-noise amplifiers in the microwave frequency region where silicon transistors can’t


    Original     		ATF-10236 ATF-10736 AN-G005 ATF10236 ATF10136 ATF-10136 HP346A MSA-0686 TK11650U TL05 PDF

    MGF 1200

    Abstract: mitsubishi mgf MGF7170AC
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7170AC Technical Note UHF BAND GaAs POWER AMPLIFIER Specifications are subject to change without notice. DESCRIPTION The MGF7170AC is a monolithic microwave integrated circuit for use in CDMA base handheld phone. PIN CONFIGURATION


    Original     		MGF7170AC MGF7170AC 28dBm 78GHz -46dBc 28dBm 520mA MGF 1200 mitsubishi mgf PDF

    MGF 1200

    Abstract: mitsubishi mgf RF MMIC MARK CODE AS mitsubishi microwave MGF7169C HPA 1200 RF MMIC MARK CODE -03 2SP53
    Text: MITSUBISHI SEMICONDUCTOR <GaAs MMIC> MGF7169C Technical Note UHF BAND GaAs POWER AMPLIFIER Specifications are subject to change without notice. DESCRIPTION PIN CONFIGURATION TOP VIEW The MGF7169C is a monolithic microwave integrated circuit for use in CDMA base handheld phone.


    Original     		MGF7169C MGF7169C 28dBm 91GHz -46dBc 28dBm 520mA 1000pF 600um MGF 1200 mitsubishi mgf RF MMIC MARK CODE AS mitsubishi microwave HPA 1200 RF MMIC MARK CODE -03 2SP53 PDF

    1N5411

    Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756
    Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal


    OCR Scan     		CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756 PDF

    transistor D 2395

    Abstract: NEC 2501 re 443
    Text: DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4225 is an NPN silicon epitaxial transistor designed for low in millimeters noise am plifier at VHF through UHF band.


    OCR Scan     		2SC4225 2SC4225 transistor D 2395 NEC 2501 re 443 PDF

    Untitled

    Abstract: No abstract text available
    Text: FP31QF 2 – Watt HFET Product Information Applications • RFID: HF, UHF, microwave • Readers Saturated Drain Current, I dss Transconductance, Gm Pinch Off Voltage, Vp 1 RF Parameter (2) Operational Bandwidth Test Frequency Small Signal Gain Maximum Stable Gain


    Original     		FP31QF 28-pin FP31QF WJ1-4401 PDF

    Untitled

    Abstract: No abstract text available
    Text: FP31QF 2 – Watt HFET Product Information • RFID: HF, UHF, microwave • Readers • • • Industrial Portable Handheld Units Min Typ Saturated Drain Current, I dss Transconductance, Gm Pinch Off Voltage, Vp 1 Thermal Resistance Junction Temperature (2)


    Original     		FP31QF 28-pin FP31QF JESD22-A114 JESD22-C101 J-STD-020B WJ1-4401 PDF

    MT3S111P

    Abstract: 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293
    Text: Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors z 280 Radio-Frequency Small-Signal FETs z 283 Radio-Frequency Power MOSFETs z 284 Radio-Frequency Bipolar Power Transistors z 284 Radio-Frequency Diodes z 285 Small-Signal MMICs Radio-Frequency Cell Packs z 287


    Original     		2SC941TM 2SC3136 TIM7179-45SL TIM7179-60SL TIM7785-4SL TIM7785-4UL TIM7785-6UL TIM7785-8SL TIM7785-8UL TIM7785-12UL MT3S111P 2SC3136 2SC4250FV TIM0910-8 TA4029CTC tim8996-30 TA4029 TMD1925-3 2SC5066 3SK293 PDF

    FET BFW11

    Abstract: FET BFW10 OF FET BFW11 BFW10 FET OF FET BFW10 BFW12 BF245A sot23 BFW10 n-channel fet BF245A j310 FET
    Text: 48 RF/Microwave Devices Small-Signal Field-Effect Transistors Junction FET's These are fo r applications in the VHF range. Principal features of these products are their low noise, high transfer conductance and their high input impedance, the latter, in particular, m inim izing signal losses and helping to sim plify


    OCR Scan     		BF245A/0 BF245A BF245B BF245C BF247A BF247B BF247C BF256A BF256B BF256C FET BFW11 FET BFW10 OF FET BFW11 BFW10 FET OF FET BFW10 BFW12 BF245A sot23 BFW10 n-channel fet BF245A j310 FET PDF

    MT4S300T

    Abstract: TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Diodes Small-Signal MMICs Radio-Frequency Cell Packs Microwave Semiconductors


    Original     		2010/9SCE0004K 2SC1923 MT4S300T TGI0910-50 MT3S111P 2SC3136 S8850AF TA4032FT MT4S300U VHF-UHF Band oscillator 2sc5108 MT4S301T PDF

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408 PDF

    2N4427 equivalent bfr91

    Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
    Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability


    OCR Scan     		PoweS3666 MRF3866 2N2857 2N3866 2N5943 MRF904 MRF571 2N4958 2N3160 2N5583 2N4427 equivalent bfr91 bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239 PDF

    SIT Static Induction Transistor

    Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
    Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are


    Original     		AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier PDF

    ecg68

    Abstract: uhf microwave fet ECG81 50 Amp 100 volt fet Amp. 100 watt fet Si-Power ECG58 ECG59 ECG60 ECG60MP
    Text: Transistors cont'd ECG Type (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Description and Application Collector To Emitter Volts BVce O Base to Emitter Volts b v Ebo Max. Collector Current Iç Amps Freq. In MHz »t


    OCR Scan     		ECG58 ECG59) TB-35 T44-1 ECG59 ECG58) ECG60 ECG60MP* ecg68 uhf microwave fet ECG81 50 Amp 100 volt fet Amp. 100 watt fet Si-Power ECG60MP PDF

    ECG58

    Abstract: ecg59 ecg84 uhf microwave fet ECG79 ECG388 ECG60 ECG60MP ECG61 ECG61MP
    Text: Transistors cont'd ECG Type (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts Description and Application bv Collector To Emitter Volts Base to Emitter Volts BVc e o BVEBo Cbo Max. Collector Current 1C A m p s Max. Device Diss. P q


    OCR Scan     		ECG58 ECG59) TB-35 T44-1 ECG59 ECG58) ECG60 ECG60MP* ecg84 uhf microwave fet ECG79 ECG388 ECG60MP ECG61 ECG61MP PDF

    2sc5066

    Abstract: MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136
    Text: SEMICONDUCTOR GENERAL CATALOG Radio-Frequency Devices Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs Radio-Frequency Bipolar Power Transistors Radio-Frequency Diodes Radio-Frequency Power Amp ICs


    Original     		SCE0004I 2SC380TM 2sc5066 MT3S111P MT3S111 toshiba transistors catalog TIM4450-4UL TGI1314-50L MT3S106 MT4S200T X-band low noise amplifiers toshiba 2SC3136 PDF

    2SK3075 equivalent

    Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
    Text: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz


    Original     		2SC5065 2SC5085 2SC5090 2SC5095 MT3S06U MT3S07U 2SC5066 2SC5086 2SC5091 2SC5096 2SK3075 equivalent 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066 PDF