222259116641
Abstract: 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module BLV859
Text: APPLICATION NOTE BLV859 UHF linear push-pull power transistor AN98013 Philips Semiconductors BLV859 UHF linear push-pull power transistor CONTENTS 1 ABSTRACT 2 INTRODUCTION 2.1 Amplifier Electrical design objectives 3 DESIGN OF THE AMPLIFIER 3.1 3.2 3.3 3.4
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BLV859
AN98013
SCA57
222259116641
222259016629
bvc62
AN98013
BD139 transistor circuit diagram
BLV589
c38 transistor
RG4M
UHF amplifier module
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uhf amplifier design
Abstract: 2N4957 nielsen Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers AN-215A AN419 GR874KL
Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by AN419/D SEMICONDUCTOR APPLICATION NOTE AN419 UHF AMPLIFIER DESIGN USING DATA SHEET DESIGN CURVES INTRODUCTION k [y12 y21 + Re y12y21 ] Freescale Semiconductor, Inc. GL = The design of UHF amplifiers usually involves a particular
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AN419/D
AN419
y12y21)
uhf amplifier design
2N4957
nielsen
Using Linvill Techniques
Using Linvill Techniques for R. F. Amplifiers
AN-215A
AN419
GR874KL
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Untitled
Abstract: No abstract text available
Text: AN11062 Broadband DVB-T UHF power amplifier with the BLF888A Rev. 1 — 30 May 2011 Application note Document information Info Content Keywords BLF888A, DVB-T, UHF broadcast Abstract This application note describes the design and performance of a DVB-T UHF power amplifier using the BLF888A.
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AN11062
BLF888A
BLF888A,
BLF888A.
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UT-090C-25
Abstract: BLF888 DVB-T Schematic dvb-t transmitters DVB-T transistor amplifier DVB-T2 DVB-T Terrestrial Schematic C4532X7R1E475MT020U dvb-t transmitter AN10869
Text: AN10869 Broadband DVB-T UHF power amplifier with the BLF888 Rev. 01 — 25 May 2010 Application note Document information Info Content Keywords BLF888, DVB-T, UHF broadcast Abstract This application note describes the design and performance of a DVB-T UHF power amplifier using the BLF888.
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AN10869
BLF888
BLF888,
BLF888.
AN10869
UT-090C-25
BLF888
DVB-T Schematic
dvb-t transmitters
DVB-T transistor amplifier
DVB-T2
DVB-T Terrestrial Schematic
C4532X7R1E475MT020U
dvb-t transmitter
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article.
Abstract: UHF Amplifier Design Using Coaxial Transformers simulation files NONLINEAR MODEL LDMOS
Text: From May 2003 High Frequency Electronics Copyright 2003 Summit Technical Media, LLC High Frequency Design BROADBAND DESIGN Broadband VHF/UHF Amplifier Design Using Coaxial Transformers By C. G. Gentzler and S.K. Leong Polyfet RF Devices T he desire of the
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300w amplifier
Abstract: 500w audio amplifier assembling LDU400C 300w class ab amplifier RF Amplifier 500w 175 mhz ldu05 uhf 1kw amplifier fm mosfet amplifier 1kw THU2604 HF300-0130
Text: RES Ltd. specializes in the design and manufacturing of FM, VHF and UHF amplifier pallets and systems for analog radio/television broadcast and digital television broadcast. All RES products, including the standard items inside, are available exclusively from Richardson Electronics.
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FM500-108C
125Wrms,
250Wrms
500Wrms
THV400
1-800-RF
G3000/BJ
MK040221
300w amplifier
500w audio amplifier assembling
LDU400C
300w class ab amplifier
RF Amplifier 500w 175 mhz
ldu05
uhf 1kw amplifier
fm mosfet amplifier 1kw
THU2604
HF300-0130
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AN562
Abstract: SD1565
Text: AN562 APPLICATION NOTE BALANCED UHF AMPLIFIERS 1. DESIGN. 425MHz, 600W pulsed power transistor amplifier with the following specifications: bandwidth BW =50MHz (450-400), passband flatness (ripple)=.05dB max, pulsewidth (P.W.)=20µsec, duty factor (DF)=15%, impedance (source and load)=50Ohms, and discrete or distributed circuitry (microstrip).
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AN562
425MHz,
50MHz
50Ohms,
AN562
SD1565
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TRANSISTOR 7059
Abstract: AN562 SD1565
Text: AN562 APPLICATION NOTE BALANCED UHF AMPLIFIERS 1. DESIGN. 425MHz, 600W pulsed power transistor amplifier with the following specifications: bandwidth BW =50MHz (450-400), passband flatness (ripple)=.05dB max, pulsewidth (P.W.)=20µsec, duty factor (DF)=15%, impedance (source and load)=50Ohms, and discrete or distributed circuitry (microstrip).
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AN562
425MHz,
50MHz
50Ohms,
TRANSISTOR 7059
AN562
SD1565
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chebyshev 3dB
Abstract: J32Z AN561 SD1563 702 Z TRANSISTOR 32CZ 00724 chebyshev 0.2dB
Text: AN561 APPLICATION NOTE WIDE BAND DESIGN OF PULSED POWER UHF AMPLIFIERS 1. REQUIRED. A pulsed power amplifier with the following specifications: minimum peak power of 250W at 435MHz, bandwidth of 30MHz 420 to 450MHz , maximum passband flatness of ±0.05dB, pulse width up to 1msec.,
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AN561
435MHz,
30MHz
450MHz)
50Ohms.
chebyshev 3dB
J32Z
AN561
SD1563
702 Z TRANSISTOR
32CZ
00724
chebyshev 0.2dB
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chebyshev 3dB
Abstract: transistor 81L AN561 SD1563 amplifier 250W
Text: AN561 APPLICATION NOTE WIDE BAND DESIGN OF PULSED POWER UHF AMPLIFIERS 1. REQUIRED. A pulsed power amplifier with the following specifications: minimum peak power of 250W at 435MHz, bandwidth of 30MHz 420 to 450MHz , maximum passband flatness of ±0.05dB, pulse width up to 1msec.,
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AN561
435MHz,
30MHz
450MHz)
50Ohms.
chebyshev 3dB
transistor 81L
AN561
SD1563
amplifier 250W
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Untitled
Abstract: No abstract text available
Text: AN11325 2-way Doherty amplifier with BLF888A Rev. 01 — 14 November 2013 Application note Document information Info Content Keywords BLF888A, Doherty, DVB-T, UHF Abstract This document gives a description and measurement results of a 2-way Doherty amplifier using 2 BLF888A UHF LDMOS transistors.
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AN11325
BLF888A
BLF888A,
BLF888A
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Untitled
Abstract: No abstract text available
Text: NXP 50 V LDMOS RF power transistors BLF881x and BLF888A Digital broadcasting at its best Operating between 470 and 860 MHz, the BLF881 driver and BLF888A (final) LDMOS transistor line-ups deliver one-octave wideband operation, excellent ruggedness, very high output power
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BLF881x
BLF888A
BLF881
BLF888A)
BLF888A
OT539
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BLF642
Abstract: No abstract text available
Text: NXP LDMOS RF power transistors BLF88x, BLF879P & BLF642 RF power UHF/DVB-T broadcasting at its best Supporting all broadcast amplifier designs in the 470 to 860 MHz band, this complete family of transistors delivers up to one octave wideband operation combined with field-proven ruggedness,
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BLF88x,
BLF879P
BLF642
BLF888B
OT539
BLF642
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Untitled
Abstract: No abstract text available
Text: TSDF02830YL Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY Features CW • Easy Gate 1 switch-off with PNP switching transistors inside PLL
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TSDF02830YL
OT-363L
D-74025
02-May-05
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TSDF02830YR
Abstract: No abstract text available
Text: TSDF02830YR Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY Features CW • Easy Gate 1 switch-off with PNP switching transistors inside PLL
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TSDF02830YR
D-74025
02-May-05
TSDF02830YR
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Untitled
Abstract: No abstract text available
Text: TSDF02830Y VISHAY Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY Features CW • Easy Gate 1 switch-off with PNP switching transistors inside PLL
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TSDF02830Y
D-74025
28-Nov-03
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Untitled
Abstract: No abstract text available
Text: TSDF02830Y Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 MOSMIC - MOS Monolithic Integrated Circuit VY CW Features • Easy Gate 1 switch-off with PNP switching transistors inside PLL • Two differently optimized amplifiers in a
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TSDF02830Y
D-74025
02-May-05
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TSDF02830YR
Abstract: analog tv Tuners
Text: TSDF02830YR VISHAY Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY Features CW • Easy Gate 1 switch-off with PNP switching transistors inside PLL
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TSDF02830YR
D-74025
28-Nov-03
TSDF02830YR
analog tv Tuners
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bs 3535
Abstract: TSDF02830Y
Text: TSDF02830Y VISHAY Vishay Semiconductors Dual - MOSMIC - two AGC Amplifiers for TV-Tuner Prestage with 5 V Supply Voltage Comments 6 5 4 MOSMIC - MOS Monolithic Integrated Circuit VY CW Features • Easy Gate 1 switch-off with PNP switching transistors inside PLL
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TSDF02830Y
D-74025
24-Aug-04
bs 3535
TSDF02830Y
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2 x 50W amplifier
Abstract: UHF TRANSISTOR 2SC3218B 50w transistor
Text: GAE GREAT AMERICAN ELECTROINCS 2SC3218B Silicon NPN power UHF transistor 2SC3218B permits the design of a Class AB Push-Pull broadband amplifier having a good degree of linearity. Output Power: Frequency Range: Voltage: Package Type: Common Emitter Configuration
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2SC3218B
2SC3218B
2 x 50W amplifier
UHF TRANSISTOR
50w transistor
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2SC3217
Abstract: 2SC321
Text: GAE GREAT AMERICAN ELECTROINCS 2SC3217 Silicon NPN power UHF transistor 2SC3217 permits he design of a Class AB Push-Pull broadband amplifier having a good degree of linearity. Output Power: Frequency Range: Voltage: Package Type: Common Emitter Configuration
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2SC3217
2SC3217
2SC321
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UHF TRANSISTOR
Abstract: 2SC3217
Text: GAE GREAT AMERICAN ELECTROINCS 2SC3217 Silicon NPN power UHF transistor 2SC3217 permits he design of a Class AB Push-Pull broadband amplifier having a good degree of linearity. Output Power: Frequency Range: Voltage: Package Type: Common Emitter Configuration
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2SC3217
2SC3217
U00Q014
UHF TRANSISTOR
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2 x 50W amplifier
Abstract: 2SC3218B uhf power transistor 50W 2SC3218
Text: GAE GREAT AMERICAN ELECTROINCS 2SC3218B Silicon NPN power UHF transistor 2SC3218B permits the design of a Class AB Push-Pull broadband amplifier having a good degree of linearity. Output Power: Frequency Range: Voltage: Package Type: Common Emitter Configuration
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2SC3218B
2SC3218B
2 x 50W amplifier
uhf power transistor 50W
2SC3218
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC3020 NPN EPITAXIAL P LA N A R T Y P E DESCRIPTION 2 S C 3 0 2 0 is a silicon NPN epitaxial planar type transistor design OUTLINE DRAWING Dimensions in mm ed for UHF power amplifier applications. FEATURES • High gain: G p e S lO d B , @f = 52 0M H z, V c c - 1 2 .5 V ,
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2SC3020
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