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    UHF 8000 3000 MHZ AMPLIFIER DESIGN TRANSISTOR Search Results

    UHF 8000 3000 MHZ AMPLIFIER DESIGN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6E3KJ152MN4A Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ101KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ331KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    UHF 8000 3000 MHZ AMPLIFIER DESIGN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MGS956

    Abstract: TRansistor CQ 648
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18040XL UHF power transistor Product specification 1999 Dec 06 Philips Semiconductors Product specification UHF power transistor LLE18040XL FEATURES PINNING - SOT437A • Emitter ballasting resistors for optimum temperature


    Original     		M3D159 LLE18040XL OT437A LLE18040XL 125002/01/pp12 MGS956 TRansistor CQ 648 PDF

    3sk catalog

    Abstract: TE85L Toshiba
    Text: Semiconductor Catalog 2012-1 Radio-Frequency Semiconductors SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Recommended Products by Application . 3 to 7 1.1 Cell Phones 1.2 TV Tuners 1.3 Low-Power Radios FRS/GMRS


    Original     		BCE0003H 3sk catalog TE85L Toshiba PDF

    MT4S300T

    Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
    Text: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones


    Original     		BCE0003F MT4S300T TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476 PDF

    Cordless Phone circuit diagram

    Abstract: 2.4GHz Cordless Phone circuit diagram BFP750 cordless phone circuit S parameters of 5.8 GHz transistor SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR RF MODULE CIRCUIT DIAGRAM dect Cordless Phone system block diagram murata wifi saw filter cordless phone ic
    Text: BF P750 BF P750 a s a Dri ve r A mpl i fi er for 5.8 G Hz Cor dl es s P hon e A ppl i c a t i ons Appl i c ati o n N ote A N 246 Revision: Rev 1.1 2010-09-24 RF and P r otec ti on D evi c es Edition 2010-09-24 Published by Infineon Technologies AG 81726 Munich, Germany


    Original     		limitation111 5000MHz BFP750 AN246, BFP750 AN246 Cordless Phone circuit diagram 2.4GHz Cordless Phone circuit diagram cordless phone circuit S parameters of 5.8 GHz transistor SCHEMATIC DIAGRAM OF WIFI RF POWER TRANSISTOR RF MODULE CIRCUIT DIAGRAM dect Cordless Phone system block diagram murata wifi saw filter cordless phone ic PDF

    MG1007-42

    Abstract: MG1020-M16 MSC1075M 1004mp MG1052-30
    Text: Power Matters. RF & Microwave Diode and Transistor Products Microsemi RFIS Integrated Solutions RF & Microwave Diode and Transistor Products Within this short form catalog are the combined product selection guides for Microsemi RF Integrated Solutions RFIS business unit RF & microwave diodes and power transistors. RFIS diode products are


    Original     		MS4-009-13 MG1007-42 MG1020-M16 MSC1075M 1004mp MG1052-30 PDF

    BGB741L7ESD

    Abstract: BGB741L7 Bluetooth Jammer RF micro devices RF TRANSISTOR 10GHZ AN207 C166 mipi PCB layout LNA 2.4G f1859
    Text: BGB741L7ESD BGB741L7ESD as Low Noise Amplifier for Applications in 300MHz to 5GHz A pplication Note AN207 Revision: Rev. 1.0 2010-06-28 RF and Protection Devices Edition 2010-06-28 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


    Original     		BGB741L7ESD BGB741L7ESD 300MHz AN207 AN207, 300MHz BGB741L7 Bluetooth Jammer RF micro devices RF TRANSISTOR 10GHZ AN207 C166 mipi PCB layout LNA 2.4G f1859 PDF

    transistor 5cw

    Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
    Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000


    Original     		CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10 PDF

    sanyo eg 8500

    Abstract: transistor 9747 MCH4009
    Text: MCH4009 Ordering number : ENA0389 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.


    Original     		MCH4009 ENA0389 25GHz A0389-13/13 sanyo eg 8500 transistor 9747 MCH4009 PDF

    sanyo eg 8500

    Abstract: sanyo 14500 82306 MCH4009 MJE 13500 marking GG
    Text: MCH4009 Ordering number : ENA0389 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.


    Original     		MCH4009 ENA0389 25GHz S21e2 A0389-13/13 sanyo eg 8500 sanyo 14500 82306 MCH4009 MJE 13500 marking GG PDF

    Untitled

    Abstract: No abstract text available
    Text: MCH4009 Ordering number : ENA0389 NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage. High gain : NF=1.1dB typ f=2GHz .


    Original     		MCH4009 ENA0389 25GHz A0389-13/13 PDF

    IPTV schematic diagram

    Abstract: AN245 BFP450 BFP750 saw EPCOS p750 cordless phone Transceiver IC WiMAX RF Transceiver BFP650 BFR380F C166
    Text: BF P750 Dri ver f or Wi Ma x 3 3 00 to 37 0 0M Hz applica tio n Applic atio n N ote A N 245 Revision: Rev. 1.0 2010-10-05 RF and P r otecti on D evic es Edition 2010-10-05 Published by Infineon Technologies AG 81726 Munich, Germany 2010 Infineon Technologies AG


    Original     		3700MHz AN245, BFP750 AN245 IPTV schematic diagram AN245 BFP450 BFP750 saw EPCOS p750 cordless phone Transceiver IC WiMAX RF Transceiver BFP650 BFR380F C166 PDF

    transistor bf 760

    Abstract: MCH4008 945 npn
    Text: MCH4008 Ordering number : ENN8395 NPN Epitaxial Planar Silicon Transistor MCH4008 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage. High gain : NF=1.1dB typ f=2GHz .


    Original     		MCH4008 ENN8395 20GHz S21e2 transistor bf 760 MCH4008 945 npn PDF

    MCH4008

    Abstract: TB 2920
    Text: MCH4008 Ordering number : ENN8395 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4008 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.


    Original     		MCH4008 ENN8395 20GHz S21e2 MCH4008 TB 2920 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCH4009 Ordering number : ENA0389A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V)


    Original     		MCH4009 ENA0389A 25GHz A038915/15 PDF

    smr-3822

    Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
    Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM


    Original     		Jun08 smr-3822 x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter PDF

    PH1819-60

    Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
    Text: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3015NT1 Rev. 2, 2/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3015NT1 Broadband High Linearity Amplifier The MMG3015NT1 is a general purpose amplifier that is internally input


    Original     		MMG3015NT1 MMG3015NT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3015NT1 Rev. 2, 2/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3015NT1 Broadband High Linearity Amplifier The MMG3015NT1 is a general purpose amplifier that is internally input


    Original     		MMG3015NT1 MMG3015NT1 PDF

    C0603C105J5RAC

    Abstract: 108-055 IRL 724 N IRL 8743 A113 A114 A115 AN1955 C0603C103J5RAC C0603C104J5RAC
    Text: Freescale Semiconductor Technical Data NOT RECOMMENDED FOR NEW DESIGN Heterojunction Bipolar Transistor Technology InGaP HBT MMG3013NT1 Broadband High Linearity Amplifier The MMG3013NT1 is a General Purpose Amplifier that is internally input matched and internally output matched. It is designed for a broad


    Original     		MMG3013NT1 MMG3013NT1 C0603C105J5RAC 108-055 IRL 724 N IRL 8743 A113 A114 A115 AN1955 C0603C103J5RAC C0603C104J5RAC PDF

    ECG transistor replacement guide book free

    Abstract: ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v rca 40673
    Text: Component Data 24 one of us has the time or space to collect all the literature available on the many different commercially available manufactured components. Even if we did, the task of keeping track of new and obsolete devices would surely be formidable. Fortunately, amateurs tend to use a


    Original     		UG-309 UG-201 UG-349 UG-1034 UG-146 UG-83 UG-318 UG-273 UG-255 ECG transistor replacement guide book free ecg semiconductors master replacement guide philips ecg master replacement guide Diode Equivalent 1N34A philips ecg semiconductors master replacement guide RCA SK CROSS-REFERENCE ecg philips semiconductor master book ECG NTE semiconductor manual transistor to220 ph on 588 5v rca 40673 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMH3111NT1 Rev. 3, 1/2011 Heterostructure Field Effect Transistor GaAs HFET MMH3111NT1 Broadband High Linearity Amplifier The MMH3111NT1 is a General Purpose Amplifier that is internally input and output prematched. It is designed for a broad range of Class A,


    Original     		MMH3111NT1 MMH3111NT1 PDF

    MMH3111N

    Abstract: GaAs S2p
    Text: Freescale Semiconductor Technical Data Document Number: MMH3111NT1 Rev. 3, 1/2011 Heterostructure Field Effect Transistor GaAs HFET MMH3111NT1 Broadband High Linearity Amplifier The MMH3111NT1 is a General Purpose Amplifier that is internally input and output prematched. It is designed for a broad range of Class A,


    Original     		MMH3111NT1 MMH3111NT1 MMH3111N GaAs S2p PDF

    C0603C105J5RAC

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MMG3H21NT1 Rev. 1, 1/2011 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3H21NT1 Broadband High Linearity Amplifier The MMG3H21NT1 is a General Purpose Amplifier that is internally input


    Original     		MMG3H21NT1 MMG3H21NT1 C0603C105J5RAC PDF

    1731-41

    Abstract: 33 GP
    Text: Freescale Semiconductor Technical Data Document Number: MMG3012NT1 Rev. 6, 2/2012 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3012NT1 Broadband High Linearity Amplifier The MMG3012NT1 is a general purpose amplifier that is internally input


    Original     		MMG3012NT1 MMG3012NT1 1731-41 33 GP PDF