UGF21030 Search Results

UGF21030 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
UGF21030		Cree	LDMOS FETs in Class AB Operation 2.1 GHz Cellular		Original	PDF
UGF21030F		Cree	FET Transistor, 30W, 2.1GHz, 28V Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs		Original	PDF
UGF21030P		Cree	FET Transistor, 30W, 2.1GHz, 28V Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs		Original	PDF

UGF21030 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
UGF21030F Abstract: UGF21030 UGF21030P 300GP Text: UGF21030 30W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class	Original	PDF	UGF21030 2135MHz, 2145MHz f1-10MHz 10MHz) 28VSpace 28VDC 350mA 2140Mhz 84MHz UGF21030F UGF21030 UGF21030P 300GP
UGF21030F Abstract: UGF21030 Cree Microwave MRF21030 UGF21030P 21701 Text: UGF21030 30W, 2.1 GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class	Original	PDF	UGF21030 2135MHz, 2145MHz f1-10MHz 10MHz) UGF21030 UGF21030F Cree Microwave MRF21030 UGF21030P 21701
Anaren Microwave Abstract: microwave office Curtice UGF21030 high power fet amplifier schematic fet curtice 063700 teflon s-parameter Text: Design of a High Power Doherty Amplifier Using a New Large Signal LDMOS FET Model Simon M. Wood Cree Microwave Inc. simon_wood@cree.com Abstract There have been a number of papers written recently on the use of the Doherty amplifier technique at microwave frequencies. These have been	Original	PDF
semiconductors cross reference Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b Text: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30	Original	PDF	BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b