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    UGF18060 Search Results

    UGF18060 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UGF18060 Cree LDMOS FETs in Class AB Operation 1800 MHz Cellular Original PDF
    UGF18060F Cree FET Transistor, 60W, 1.8GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF
    UGF18060P Cree FET Transistor, 60W, 1.8GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFETs Original PDF

    UGF18060 Datasheets Context Search

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    UGF18060F

    Abstract: 10w 900MA MRF18060 UGF18060 UGF18060P
    Text: UGF18060 60W, 1.8 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.805 to 1.88 GHz. Rated with a minimum output power of 60W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier


    Original     		PDF UGF18060 MRF18060 CDMA2000: UGF18060F UGF18060F 10w 900MA MRF18060 UGF18060 UGF18060P

    semiconductors cross reference

    Abstract: UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b
    Text: Semiconductors Cross Reference: Philips LDMOS vs. Cree LDMOS Transistors Philips Type Cree Type Mode of Operation Voltage v Frequency Band (MHz) Output Power (W) Power Gain (dB) Drain Efficiency η (%) Package BLF1043 UPF1010 CW 26 940 10 16 60 440095 BLF3G21-30


    Original     		PDF BLF1043 UPF1010 BLF3G21-30 UPF1030 UGF09030 BLF1046 UGF09045 UGF09060 BLF4G10-120 semiconductors cross reference UGF18030 cw 180 UGF16085 UPF14060 transistors cross reference list BLF3G21-30 BLC5G22-100 UGF25025 blf4g20-110b