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    UF640 Price and Stock

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    onsemi NUF6401MNT1G

    FILTER RC(PI) 100 OHM/17PF SMD
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    DigiKey NUF6401MNT1G Digi-Reel 8,570 1
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    onsemi SNUF6401MNT1G

    FILTER RC(PI) 100 OHM/17PF SMD
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    DigiKey SNUF6401MNT1G Digi-Reel 6,900 1
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    onsemi SZNUF6401MNWT1G

    XDFN12W12 EMI FILTER WITH ESD
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    Rochester Electronics LLC NUF6402MNT1G

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    Find more UF640 price and stock on Findchips.com

    UF640 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UF640 Unisonic Technologies 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET Original PDF
    UF640L-TA3-T Unisonic Technologies 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET Original PDF
    UF640-TA3-T Unisonic Technologies 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET Original PDF
    UF640-TF3-T Unisonic Technologies 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET Original PDF

    UF640 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640 MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET „ DESCRIPTION These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original     		UF640 UF640 UF640L UF640G QW-R502-066 PDF

    UF640L-TA3-T

    Abstract: PN channel MOSFET 10A UF640 UF640-TA3-T UF640-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640 MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 1 DESCRIPTION These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original     		UF640 UF640 O-220 O-220F UF640L UF640L-TA3-T PN channel MOSFET 10A UF640-TA3-T UF640-TF3-T PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 1 1 TO-252 „ DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original     		UF640 O-252 O-263 UF640 O-220 O-220F O-220F2 QW-R502-066 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640V Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET „ DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original     		UF640V 18OHM, UF640V QW-R502-916, PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET „ DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original     		UF640 18OHM, UF640 QW-R502-066 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original     		UF640 18OHM, UF640 QW-R502-066 PDF

    uf640

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original     		UF640 18OHM, UF640 QW-R502-066 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640 MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET 1 DESCRIPTION These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original     		UF640 UF640 O-220 O-220F UF640L QW-R502-066 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640 MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET „ DESCRIPTION These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original     		UF640 UF640 UF640L QW-R502-066 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640-P Power MOSFET 18A, 200V, 0.18OHM, N-CHANNEL POWER MOSFET  DESCRIPTION These kinds of n-channel power MOSFET field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer


    Original     		UF640-P 18OHM, UF640-P O-220 QW-R502-A17 PDF

    TQ2 rohs

    Abstract: UF640 UF640L TO-220 UF640L-TA3-T UF640-TA3-T UF640-TF3-T UF640L UF640G P-n diode to 263
    Text: UNISONIC TECHNOLOGIES CO., LTD UF640 Power MOSFET 18 A, 200 V, 0.18 OHM, N-CHANNEL POWER MOSFET „ DESCRIPTION These kinds of n-channel power mos field effect transistor have low conduction power loss, high input impedance, and high switching speed, Linear Transfer Characteristics, so can be use in


    Original     		UF640 UF640 UF640L UF640G QW-R502-066 TQ2 rohs UF640L TO-220 UF640L-TA3-T UF640-TA3-T UF640-TF3-T UF640L UF640G P-n diode to 263 PDF

    UFS402

    Abstract: No abstract text available
    Text: UF5400 THRU SEMICONDUCTOR TECHNICAL DATA FORWARDINTERNATIONAL ELECTRONICSLTD. UF5408 TECHNICAL SPEC/F/CAT/ONS OF ULTRA FAST RECTIFIER VOLTAGE R A N G E - 50 to 1000 Volts C U R R E N T - 3.0 Amperes FEATURES ‘ Low pow er loss, high e ffic ie n cy * Low leakage


    OCR Scan     		UF5400 UF5408 IL-STD-202E. UFS402 PDF

    ESDA6V8

    Abstract: WGBLC24C WOST05C ESDA6V1W6 esda6v8v5 WGRV05-4 TVS 200 diode ESDA14V2 ESDA25 WOSD12
    Text: W EITRON TECH NO LOG Y TVS I ESD Protection Diode PPK C Ir 8 /2 0 ms (pF) @V rwm (W) Typ (MA) 300 20 220 20 190 5.0 13.3 150 4.0 5.0 600 1.0 20 WOSTOSC 5.0 6.1 WOSTO8C 8.0 8.5 WOST12C 12.0 WOST15C 15.0 ESDA5V3 V rwm V br (V) (V) WOST04 4.0 5.0 WOSTOS 5.0


    OCR Scan     		WOST04 WOST05 WOST12 OT-23 WOST04C WOST12C WOST15C ESDA14V2 ESDA25 ESDA6V8 WGBLC24C WOST05C ESDA6V1W6 esda6v8v5 WGRV05-4 TVS 200 diode WOSD12 PDF

    FEP300P

    Abstract: BYY26-1 BYY26 FES160T BYV 20f 8YV27-2DO BYy27 UF540I Gw260 FEP300
    Text: LOW TO MEDIUM CURRENT AXIAL FAST EPITAXIAL RECTIFIERS UGOU dm U0060 UG1A in U010 PACKAGE MPG06 DO-2D4AL » A VU 0M 0.6 1.0 UGNA TYPE VFklQOM VfelttM VUOOM VUOOM vfMom VWflOM vMoom VM M VhlttOM *r H RElD 0W 04AP 91001 Hn GltOM 8YV260 tin BWSE UG2A ihm UQJD


    OCR Scan     		U0060 MPG06 00-204AP GI1001 GI1003 GI1004 8YV260 D02PMO BYY274I FEP300P BYY26-1 BYY26 FES160T BYV 20f 8YV27-2DO BYy27 UF540I Gw260 FEP300 PDF