UF630L-TM3-T
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET DESCRIPTION 1 1 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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UF630
O-220
O-220F
O-220F1
O-262
O-252
O-251
O-220
O-220F1
O-220F
UF630L-TM3-T
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UTC UF630L
Abstract: UF630L-TN3-R uf630 power mosfet TO-252 MOSFET p channel UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T
Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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Original
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UF630
UF630L
UF630-TA3-T
UF630L-TA3-T
QW-R502-049
UTC UF630L
UF630L-TN3-R
uf630 power mosfet
TO-252 MOSFET p channel
UF630
UF630L-TA3-T
UF630-TA3-T
UF630-TF3-T
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PDF
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UF630L-TN3-R
Abstract: UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T
Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET 1 TO - 252 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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Original
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UF630
O-220
O-220F
UF630-TA3-T
UF630L-TA3-T
QW-R502-049
UF630L-TN3-R
UF630
UF630-TA3-T
UF630-TF3-T
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching
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Original
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UF630
O-220
O-220F
O-220F1
O-220F2
O-262
O-251
O-252
QW-R502-049
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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Original
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UF630
O-251
O-220
O-220F
O-220F1
O-252
O-220
O-220F1
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET 1 1 1 TO-220F1 FEATURES * RDS ON < 0.4Ω@ VGS = 10V, ID = 5A * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer Capacitance ( CRSS = typical 80 pF ) * Fast Switching Capability
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UF630
O-220F1
O-220F
O-220
O-220F2
O-262
O-251
O-252
QW-R502-049
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., UF630 MOSFET 9A, 200V, 0.4Ω , N-CHANNEL POWER MOSFETS DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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Original
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UF630
O-220
UF630L
UF630-TA3-T
QW-R502-049
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PDF
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UF630L-TN3-R
Abstract: uf630 power mosfet UF630 UF630L-TA3-T
Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET 1 TO - 252 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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Original
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UF630
O-220
O-220F
UF630L-TA3-T
UF630G-TA3-Tt
QW-R502-049
UF630L-TN3-R
uf630 power mosfet
UF630
UF630L-TA3-T
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PDF
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UTC UF630L
Abstract: 5V GATE TO SOURCE VOLTAGE MOSFET UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T
Text: UNISONIC TECHNOLOGIES CO., LTD UF630 MOSFET 9A, 200V, 0.4Ω , N-CHANNEL POWER MOSFETS 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,
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Original
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UF630
O-220
O-220F
UF630L
UF630-TA3-T
UF630L-TA3-T
QW-R502-049
UTC UF630L
5V GATE TO SOURCE VOLTAGE MOSFET
UF630
UF630L-TA3-T
UF630-TA3-T
UF630-TF3-T
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PDF
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