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    UF630 POWER MOSFET Search Results

    UF630 POWER MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    UF630 POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UTC UF630L

    Abstract: 5V GATE TO SOURCE VOLTAGE MOSFET UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD UF630 MOSFET 9A, 200V, 0.4Ω , N-CHANNEL POWER MOSFETS 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original     		PDF UF630 O-220 O-220F UF630L UF630-TA3-T UF630L-TA3-T QW-R502-049 UTC UF630L 5V GATE TO SOURCE VOLTAGE MOSFET UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., UF630 MOSFET 9A, 200V, 0.4Ω , N-CHANNEL POWER MOSFETS DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original     		PDF UF630 O-220 UF630L UF630-TA3-T QW-R502-049

    UF630L-TN3-R

    Abstract: uf630 power mosfet UF630 UF630L-TA3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET 1 TO - 252 „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original     		PDF UF630 O-220 O-220F UF630L-TA3-T UF630G-TA3-Tt QW-R502-049 UF630L-TN3-R uf630 power mosfet UF630 UF630L-TA3-T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET 1  TO-220 DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching


    Original     		PDF UF630 O-220 O-220F O-220F1 O-220F2 O-262 O-251 O-252 QW-R502-049

    UF630L-TM3-T

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET „ DESCRIPTION 1 1 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original     		PDF UF630 O-220 O-220F O-220F1 O-262 O-252 O-251 O-220 O-220F1 O-220F UF630L-TM3-T

    UTC UF630L

    Abstract: UF630L-TN3-R uf630 power mosfet TO-252 MOSFET p channel UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original     		PDF UF630 UF630L UF630-TA3-T UF630L-TA3-T QW-R502-049 UTC UF630L UF630L-TN3-R uf630 power mosfet TO-252 MOSFET p channel UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T

    UF630L-TN3-R

    Abstract: UF630 UF630L-TA3-T UF630-TA3-T UF630-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 9 Amps, 200 Volts N-CHANNEL POWER MOSFET 1 TO - 252 „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original     		PDF UF630 O-220 O-220F UF630-TA3-T UF630L-TA3-T QW-R502-049 UF630L-TN3-R UF630 UF630-TA3-T UF630-TF3-T

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 „ DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters,


    Original     		PDF UF630 O-251 O-220 O-220F O-220F1 O-252 O-220 O-220F1

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UF630 Power MOSFET 200V, 9A N-CHANNEL POWER MOSFET 1  1 1 TO-220F1 FEATURES * RDS ON < 0.4Ω@ VGS = 10V, ID = 5A * Ultra Low Gate Charge ( typical 19 nC ) * Low Reverse Transfer Capacitance ( CRSS = typical 80 pF ) * Fast Switching Capability


    Original     		PDF UF630 O-220F1 O-220F O-220 O-220F2 O-262 O-251 O-252 QW-R502-049