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    UF2820R

    Abstract: FL2000
    Text: RF MOSFET Power Transistor, 2OW, 28V 100 - 500 MHz UF2820R Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices . . Absolute Maximum Ratings at 25°C


    Original     		UF2820R UF262DR UF2820R FL2000 PDF