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    UBR 100 Search Results

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    UBR 100 Price and Stock

    Texas Instruments AMC1100DUB

    Isolation Amplifiers 4.25kV PEAK Iso Amp
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics AMC1100DUB 5,082
    • 1 $5.96
    • 10 $3.82
    • 100 $3.61
    • 1000 $3
    • 10000 $2.83
    		Buy Now

    Texas Instruments AMC1100DUBR

    Isolation Amplifiers 4.25kV PEAK Iso Amp
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics AMC1100DUBR 4,062
    • 1 $4.51
    • 10 $3.07
    • 100 $2.73
    • 1000 $2.42
    • 10000 $2.33
    		Buy Now

    PanJit Semiconductor SVT20100UB_R2_00001

    Schottky Diodes & Rectifiers 100V,Schottky,TO-277B,20A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SVT20100UB_R2_00001
    • 1 $1.17
    • 10 $0.83
    • 100 $0.599
    • 1000 $0.401
    • 10000 $0.342
    		Get Quote

    PanJit Semiconductor SVT10100UB_R2_00001

    Schottky Diodes & Rectifiers 100V,Schottky,TO-277B,10A
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SVT10100UB_R2_00001
    • 1 $0.7
    • 10 $0.505
    • 100 $0.34
    • 1000 $0.203
    • 10000 $0.168
    		Get Quote

    UBR 100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET ADAPTOR RPC-3.50 JACK - WAVEGUIDE 03K220-UBR All dimensions are in mm; tolerances according to ISO 2768 m-H Interface According to Mechanically compatible with Waveguide flange UBR 220 according to IEC 60169-23 RPC-2.92 and SMA IEC 60154 and IEC 153


    Original     		PDF 03K220-UBR D-84526 18-49ight

    avalanche photodiode noise factor

    Abstract: No abstract text available
    Text: SSO-AD-230-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 Active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR


    Original     		PDF SSO-AD-230-TO52i avalanche photodiode noise factor

    Avalanche photodiode APD

    Abstract: No abstract text available
    Text: SSO-AD-230-TO52 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 1 TO52 : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR


    Original     		PDF SSO-AD-230-TO52 Avalanche photodiode APD

    SSO-AD-500-TO52i

    Abstract: No abstract text available
    Text: SSO-AD-500-TO52i Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package 1a TO52i : Parameters: 2 active area 1) Dark current (M=100) 1) Total capacitance (M=100) Break down voltage UBR


    Original     		PDF SSO-AD-500-TO52i SSO-AD-500-TO52i

    Untitled

    Abstract: No abstract text available
    Text: SSO-AD-1100-TO5i Avalanche Photodiode Special characteristics High gain at low bias voltage Fast rise time 1130 µm diameter active area low capacitance Parameters: active area 1 dark current M=100) 1) Total capacitance (M=100) 2) Break down UBR (at ID=2µA)


    Original     		PDF SSO-AD-1100-TO5i 1130m

    TO52 package

    Abstract: No abstract text available
    Text: SSO-AD-500-TO52-S1 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package TO52 S1 : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR


    Original     		PDF SSO-AD-500-TO52-S1 TO52 package

    Untitled

    Abstract: No abstract text available
    Text: SSO-AD-800-TO5i Avalanche Photodiode Special characteristics High gain at low bias voltage Fast rise time 800 µm diameter active area low capacitance Parameters: active area 1 dark current M=100) 1) Total capacitance (M=100) 2) Break down UBR (at ID=2µA)


    Original     		PDF SSO-AD-800-TO5i

    Untitled

    Abstract: No abstract text available
    Text: SSO-AD-500-TO52 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Parameters: Package 1 TO52 : 2 Active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR


    Original     		PDF SSO-AD-500-TO52 50oltage

    TO52

    Abstract: SSO-AD-230-TO52-S1
    Text: SSO-AD-230-TO52-S1 Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package TO52 S1 : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance (M=100) Break-down voltage UBR


    Original     		PDF SSO-AD-230-TO52-S1 TO52 SSO-AD-230-TO52-S1

    nir source

    Abstract: No abstract text available
    Text: SSO-AD-230 NIR-TO52-S1 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ? 760-910 nm high speed, low noise 230 µm diameter active area low slope multiplication curve Package TO52 S1 : Parameters: active area dark current 1) (M=100)


    Original     		PDF SSO-AD-230 NIR-TO52-S1 nir source

    nir source

    Abstract: No abstract text available
    Text: SSO-AD-230-TO52 NF Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 230 µm diameter active area low capacitance Package 2a TO52 Nail head : Parameters: 2 Active area 1) dark current (M=100) 1) Total capacitance


    Original     		PDF SSO-AD-230-TO52 nir source

    Avalanche photodiode APD

    Abstract: No abstract text available
    Text: SSO-AD-500-TO52 NF Avalanche Photodiode Special characteristics: High gain at low bias voltage Fast rise time 500 µm diameter active area low capacitance Package 2a TO52 Nail head : Parameters: 2 active area 1) dark current (M=100) 1) Total capacitance


    Original     		PDF SSO-AD-500-TO52 Avalanche photodiode APD

    MXT4400

    Abstract: MXT3010 AS4400
    Text: CellMaker-622TM Release 3.2 operations and reference manual Order Number: 100516-04 December 1999 Copyright c 1999 by Maker Communications, Inc. All rights reserved. Printed in the United States of America. The information in this document is believed to be correct, however, the


    Original     		PDF CellMaker-622TM CellMaker-622 MXT4400 MXT3010 AS4400

    baud rate generator

    Abstract: AT94K
    Text: FPSLIC Baud Rate Generator Features: • • • • • Generates any required baud rate High baud rates at low crystal clock frequencies Uses both internal and external clock sources Supports in both single speed and double speed modes Easy-to-use "Excel" table to calculate any baud rate


    Original     		PDF 16-bit 04/01/xM baud rate generator AT94K

    mega161

    Abstract: ne 5555 timer 005D SP15 Bit02 Baud
    Text: Features • High-performance, Low-power AVR 8-bit Microcontroller • Advanced RISC Architecture • • • • • • • • – 130 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation


    Original     		PDF 1228C mega161 ne 5555 timer 005D SP15 Bit02 Baud

    CELLMAKER-622

    Abstract: CRC10 MXT3010
    Text: CellMaker-622TM Release 2.1 operations and reference manual Order Number: 100113-15 December 1998 Copyright c 1998 by Maker Communications, Inc. All rights reserved. Printed in the United States of America. The information in this document is believed to be correct, however, the


    Original     		PDF CellMaker-622TM CellMaker-622 CRC10 MXT3010

    Cu80

    Abstract: diode 4148 specification diode 4148 in 4148 78min UBR100
    Text: Technical specification Page 1 Pages 2 Chip for silicon switching diode Type: 1N 4148 chip size 0,28 х 0,28 mm Diameter of wafer Sizes of chip F/2 100 mm 0,28 х 0,28 mm А B 170 ± 10 µm C 50 ± 5 µm D 140 ± 20 µm Metallization of planar side V - Ag


    Original     		PDF Ag-15% Cu80 diode 4148 specification diode 4148 in 4148 78min UBR100

    005D

    Abstract: SP15
    Text: Features • High-performance, Low-power AVR 8-bit Microcontroller • Advanced RISC Architecture • • • • • • • • – 130 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation


    Original     		PDF 1228D 005D SP15

    Untitled

    Abstract: No abstract text available
    Text: Features • High-performance, Low-power AVR 8-bit Microcontroller • Advanced RISC Architecture • • • • • • • • – 130 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation


    Original     		PDF 1228Dâ

    005D

    Abstract: SP15
    Text: Features • High-performance, Low-power AVR 8-bit Microcontroller • Advanced RISC Architecture • • • • • • • • – 130 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation


    Original     		PDF 1228B 09/01/xM 005D SP15

    005D

    Abstract: SP15 LCD FREQUENCY COUNTER MODULE
    Text: Features • High-performance, Low-power AVR 8-bit Microcontroller • Advanced RISC Architecture • • • • • • • • – 130 Powerful Instructions – Most Single Clock Cycle Execution – 32 x 8 General Purpose Working Registers – Fully Static Operation


    Original     		PDF 1228C 005D SP15 LCD FREQUENCY COUNTER MODULE

    nir source

    Abstract: apd 400- 700 nm
    Text: SSO-AD-500 NIR-TO52-S1 Avalanche Photodiode NIR Special characteristics: quantum efficiency >80% at ! 760-910 nm high speed, low noise 500 µm diameter active area low slope multiplication curve Parameters: Package TO52 S1 : 2 active area 1) 0,196 mm ∅ 500 µm


    Original     		PDF SSO-AD-500 NIR-TO52-S1 nir source apd 400- 700 nm

    UBR220

    Abstract: UBR100 flange waveguide R120 WR75 CIRCULATOR wr75 Racal UBR23 waveguide circulator 18C3041 racal isolator WR75
    Text: WAVEGUIDE JU N C T IO N C IR C U L A T O R S AND ISO LA TO R S A full range of waveguide junction circulators and isolators are available covering the frequency range 3.400GHz - 65.000GHz. This range includes units manufactured from investment castings and


    OCR Scan     		PDF 400GHz 000GHz. WG11A WR229 3041y 500GHi 20D2041 UBR220 20D2042 UBR220 UBR100 flange waveguide R120 WR75 CIRCULATOR wr75 Racal UBR23 waveguide circulator 18C3041 racal isolator WR75

    waveguide R120 WR75

    Abstract: UER84 ubr 100 WR112 flange wr112 UBR100 UBR84 UBR-120 WR137 flange WR90 waveguide
    Text: ISO- ORS Integrating a coaxial isolator with a waveguide to coaxial transition provides a com bination which ensures optimum microwave performance. Custom designs are available on request. WAVEGUIDE DESIGNATION British Stand IEC RETMA SPECIFICATION TYPE NO.


    OCR Scan     		PDF 500GHZ WG11A WR229 ASD3041 WR137 ACD3041 ACD3042 WR112 AC03043 ACD3044 waveguide R120 WR75 UER84 ubr 100 WR112 flange UBR100 UBR84 UBR-120 WR137 flange WR90 waveguide