2SK2500
Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose
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CD 1691 CB
Abstract: RCR32 9948 UPD65840GJ
Text: UPD65840GJOSO9 - HHL Rf [Mohín] 1 FCR32.0M2G Vdd= 3.3 CV] Fig.a-d Ta= 20 Cdeg] -• Typ ic a 1 a. V1H/V1L 7 CV] 5 3 1 -1 1- 1 7 5 1 1 1 b. V2H/V2L I 3 V2H 1 -1 " V n. r Vci L c. .5 .3 8 i •i i 1 d. 1 i i 1 1 1 1 1 3.3 1 1 i I I 3.2 .1 1 1 .2 1
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UPD65840GJOSO9
FCR32
UPD6584KJ0S08
CD 1691 CB
RCR32
9948
UPD65840GJ
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Tbb 38
Abstract: bj 2955
Text: UPD65840GJOSO9 - HHL Rf CMohml 1 FCR33.8BM2G Vdd- 3.3 CV3 CFig.i-d Ta« 20 Cdeg] Typical CL1/CL2 tpFl Lowhng cap&cltMce CLl/CL2) dependence of oscil Iit ing character! sties (CL1«CL2) UPD65840GJOSO9 - HHL CL1/CL2 CpF] 10 / 10 Rf CMohm] 1 7 5 3 a. V1H/V1L
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uPD65848GJ0S09
FCR33
86H2G
UPD65840GJOSO9
Tbb 38
bj 2955
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UPD65840GJOSO9
Abstract: No abstract text available
Text: IC dependence of oscillating characteristics uPD65840GJOSO9 FCR8.0MC5 - STD Room Temp. Vdd CV3 3.3 item a*e UPD65840GJOSO9 - HHL Rf CMohm] 1 FCR8.0MC5 Ta« 20 Cdeg] Typical ? . a. V1H/V1L CV3 5 m 3 1 -1 5 ,i 1 > 5 . 3.3 V1H S=-3 1 -I 7 b. V2H/V2L CV1
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uPD65840GJOSO9
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tcl tv 21
Abstract: FCR16
Text: IC dependence of oscillating characteristics uPD65840GJOSO7 FCR16.0M2G - STD >. itet IC NO a. IV] V1H/V1L LLS 3.8 CCH 3.6 HHL 3.5 -.7 b. M c. V2H/V2L 3.4 -.2 3.4 -.2 -.1 3.5 -.7 Room Temp. Vdd CV] 3.3 -.1 * [MHz] d. CuS] e. m item a~e f. CV] fl. CV] Fo*c
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uPDS58406J0S07
FCR16
UPD65840GJOSO7
tcl tv 21
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33av
Abstract: tdb 158 CB346
Text: IC dependence of oscillating characteristics uPD65840GJOSO9 FCR8.0M5 STD Room Vdd Temp. CV] 3.3 item a~e> CL1/CL2 CpFJ 22 / 22 Rf CMohm] 1 UPD65840GJOSO7 - HHL CL1/CL2 CpF] 22 / 22 -fi- — < X Mi l 1 1 -I 7 S 3 1 -I .5 .3 .1 -.1 -.3 -.5 400 0-0 Typical
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uPD65840GJOSO9
UPD65840GJOSO7
33av
tdb 158
CB346
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Untitled
Abstract: No abstract text available
Text: IC dependence of oscillating characteristics uPD65840GJOSO9 FCR4.0MC5 - STD Room Temp. Vdd CV] 3.3 item a*e UPD65840GJOSO9 - HHL Rf CMohm] 1 FCR4.0MC5 Ta- 20 Cdeg] Typical »-— •» Worst o 7 5 3 a. V1H/V1L - 1 -I 7 S V,L ? — b. V2H/V2L CV] f - —+
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uPD65840GJOSO9
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C543
Abstract: No abstract text available
Text: UPD65840GJOSO? - HHL FCR8.0MC5 T a - 2 0 Cdeg] T y p ic a l a . VIH/VIL ? S 3 1 -1 7 * S 3 1 -1 .5 .3 vit. "•£- -.6 b . V2H/V2L CV3 -.6 3,5 3.9 .015 V2H - V2L c . F o se - .1 60 55 50 45 40 » “ - [XI • m-f • - 1 ■ d. Trise e . O utv
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UPD65840GJOSO?
uPD65848GJ0S07
C543
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tdb 158
Abstract: FCR16
Text: IC dependence of oscillating characteristics uPD65840GJOSO9 FCR16.0M2G - STD \ lt«l IC M o \ a. m V1H/V1L US 3.5 CCH 3.4, HHL 3.4 -.3 b. m c. V2H/V2L 3.4, .2 3.4, -.3 .2 3.5, -.4 Room Temp. Vdd CV3 .1 * crttt] d. CuS] a. 3.3 m item a~e f. M g. m Fo*c Trise
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uPD65840GJOSO9
FCR16
uPDG5840GJOSO9
UPD658486J0S09
tdb 158
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Untitled
Abstract: No abstract text available
Text: IC dependence of oscillating characteristics uPD65840GJOSO9 FCR4.0M5 - STD Room Temp. Vdd CVD 3.3 item a~e uPD65840GJOSO9 - HHL CL1/CL2 CpF3 33 / 33 Rf CMohm] 1 - V1H/V1L v/iuguli a. 5 V1H Ì -1 7 .— b. V2H/V2L m V2H • 3 60 -• • 1 ^ 1 ft - •
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uPD65840GJOSO9
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RCR32
Abstract: 9948 IC AN 8249 534256
Text: U PD 65B 40G JO SO 7 - HHL V dd- 3 .3 m F C R 3 2 . 0M2G F lg .a - d T a - 2 0 C deg] T y p ic a l a i/C L 2 C pFl Lading c«picitance(CLl/CL2) dependence of cs c illitf ng chtricteri»tfci CCLI-Q-2 ) IC dependence of oscillating characteristics UPD65840GJOSO7
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65840G
UPD65840GJOSO?
FCR32
uP065848G
8406JO
PCR32
CL1/02
RCR32
9948
IC AN 8249
534256
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UPD65840GJ
Abstract: No abstract text available
Text: IC dependence of oscillating characteristics uPD65840GJOSO? FCR4.0M5 - STD Room Temp. Vdd CV3 * iikTOUW t. 3 .3 IC NO. H H L - C f T L ^ - r . ite m a-e UPD65840GJOSO7 - HHL C L1/C L2 CpF] 33 / 33 a . V1H/V1L 7 5 .-% VIH • I -1 y vu m-CV] b . V2H/V2L
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uPD65840GJOSO
uPD65840GJOSO7
UPD65840GJ
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Rbl 69
Abstract: h 3 ohmj
Text: uPD65840GJ - Rd2 F C R 4 . 0 M C 5 U d d = 3 .3 C U ] F i g . a ~ d 20 T a = -fl q . 5 3 U 1H / U 1 L [ d e g ] T y p i c a l C U ] F i 7 5 3 i i b . U 2H / U 2L C. 7. F DSC I_ f H U ] i i i_ I_ 1_ I_ I_ l_ i_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _
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uPD65840GJ
UPO65840GJ
Rbl 69
h 3 ohmj
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ic 7808
Abstract: 4 E 7808 7808 cv LD 33 cv
Text: uPD6S840GJOSO? - HHL FCR33.86H2G Vdd* 3.3 £V3 Fig.a-d Ta- 38 idegJ Typical a. V1H/V1L 7 S 3 CV3 I- IS 1 7 t I I_I _ J b. V2H/V2L CV1 5 3 :V2H 1 -1 .5 M S jz t!?t-JLZXIX c. Fosc .3 .1 Ll-j _ i -J -J 1 -J d. tr ise 3 .1 i 3 " L 2 «"j - I I J - J I -I—
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uPD6S840GJOSO
FCR33
86H2G
UPD65840GJOSO7
ic 7808
4 E 7808
7808 cv
LD 33 cv
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upd6504
Abstract: power ic of lg tv upd65040
Text: uPD65040GJOSO7 - HHL FCR4.0MC5 Ta» 20 Edeg] 7 a. V1H/V1L CV3 Q- O Typical * - •* Horst 5 3 I -1 7 5 3 I -1 .5 d. Trlse CuS3 »• o- e. Duty -e C*3 *O- S 3.5 Vdd 4.5 [V] f. Vstart CV3 Typical • 2.58 Horst * 2.59 g. Vhold CV3 Typical ■ 1.53 Horst
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uPD65040GJOSO7
UPD65840GJOSO7
UPD65B40GJOSO7
UPD65840GJOSO7
upd6504
power ic of lg tv
upd65040
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