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    UPC2711T Price and Stock

    California Eastern Laboratories (CEL) UPC2711TB-E3

    IC AMP CELLULAR 2.7-3GHZ SOT363
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    DigiKey UPC2711TB-E3 Reel
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    California Eastern Laboratories (CEL) UPC2711TB-E3-A

    IC AMP CELLULAR 2.7-3GHZ SOT363
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    DigiKey UPC2711TB-E3-A Cut Tape
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    Rochester Electronics LLC UPC2711TB-E3-A

    IC AMP CELL 2.7GHZ-3GHZ SOT363
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    California Eastern Laboratories (CEL) UPC2711TB-EVAL

    Amplifier IC Development Tools For UPC2711TB-A
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    Mouser Electronics UPC2711TB-EVAL
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    NEC Electronics Group UPC2711TB-E3

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    Bristol Electronics UPC2711TB-E3 9,301 3
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    Quest Components UPC2711TB-E3 4,800
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    UPC2711TB-E3 2,240
    • 1 $1.995
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    UPC2711TB-E3 524
    • 1 $2.4375
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    Find more UPC2711T price and stock on Findchips.com

    UPC2711T Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    UPC2711T NEC 2.9 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT Original PDF
    uPC2711T NEC RF Amplifier, Buffer amplifier, Single channel, Chip, 2900 MHz Typ, SOT-363, 6-Pin Original PDF
    UPC2711TB NEC Super small-size low-current high-freq. wide-band amp. Original PDF
    uPC2711TB NEC RF Amplifier, Buffer amplifier, Single channel, Chip, 3000 MHz, SOT-363, 6-Pin Original PDF
    UPC2711TB-E3 NEC Super small-size low-current high-freq. wide-band amp. Original PDF
    UPC2711TB-E3 NEC 5 V, silicon MMIC wideband amplifier. Original PDF
    uPC2711TB-E3 NEC 5 V, Super Minimold Silicon MMIC Wideband Amplifier Original PDF
    UPC2711TB-E3-A California Eastern Laboratories RF Amplifiers, RF/IF and RFID, MMIC AMP 2.9GHZ SOT-363 Original PDF
    UPC2711TB-E3-A NEC MMIC AMP 2.9GHZ SOT-363 Original PDF
    UPC2711TB-EVAL California Eastern Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, EVAL BOARD FOR UPC2711TB Original PDF
    UPC2711T-E3 NEC 2.9 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT Original PDF
    UPC2711T-E3 NEC 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER Original PDF

    UPC2711T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    am tuners

    Abstract: Sat Tuner Application Note marking c1g 865 marking power amplifier diode gp 421 marking 865 marking 865 mmic transistor 936 UPC2711 UPC2711TB
    Text: BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2711TB, UPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER TYPICAL PERFORMANCE CURVES FEATURES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V


    Original     		PDF UPC2711TB, UPC2712TB UPC2711TB: UPC2712TB: UPC2711TB UPC2711TB UPC2712TB am tuners Sat Tuner Application Note marking c1g 865 marking power amplifier diode gp 421 marking 865 marking 865 mmic transistor 936 UPC2711

    UPC2708

    Abstract: UPC2708T DB815 UPC2708T-E3 UPC2711 UPC2711T UPC2711T-E3
    Text: 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER FEATURES UPC2708T UPC2711T GAIN vs. FREQUENCY 20 • WIDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T UPC2708 15 Gain, GS (dB) • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN


    Original     		PDF UPC2708T UPC2711T UPC2708T) UPC2708 UPC2711 UPC2708T UPC2711T UPC2708 DB815 UPC2708T-E3 UPC2711 UPC2711T-E3

    pt 7313

    Abstract: diode gp 421 UPC2711TB UPC2711TB-E3 UPC2712TB UPC2712TB-E3
    Text: UPC2711TB UPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FEATURES TYPICAL PERFORMANCE CURVES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V UPC2712TB • WIDEBAND RESPONSE:


    Original     		PDF UPC2711TB UPC2712TB UPC2711TB: UPC2712TB: UPC2711TB UPC2712TB pt 7313 diode gp 421 UPC2711TB-E3 UPC2712TB-E3

    DB815

    Abstract: UPC2708 UPC2708T UPC2708T-E3 UPC2711 UPC2711T UPC2711T-E3
    Text: 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER FEATURES UPC2708T UPC2711T GAIN vs. FREQUENCY 20 • WIDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T UPC2708 15 Gain, GS (dB) • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN


    Original     		PDF UPC2708T UPC2711T UPC2708T) UPC2708 UPC2711 UPC2708T UPC2711T UPC2708T-E3 UPC2711T-E3 DB815 UPC2708 UPC2708T-E3 UPC2711 UPC2711T-E3

    marking c1g

    Abstract: marking c1h UPC2712TB pt 7313
    Text: BIPOLAR ANALOG INTEGRATED CIRCUITS UPC2711TB, UPC2712TB 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER TYPICAL PERFORMANCE CURVES FEATURES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V


    Original     		PDF UPC2711TB: UPC2712TB: UPC2711TB, UPC2712TB UPC2712TB UPC2711TB UPC2711TB marking c1g marking c1h pt 7313

    C1H mmic

    Abstract: UPC2711TB UPC2712TB-E3 mmic e3 UPC2711TB-E3 UPC2712TB c1g nec marking C1H mmic
    Text: PRELIMINARY DATA SHEET 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FEATURES UPC2711TB UPC2712TB TYPICAL PERFORMANCE CURVES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY 25 • SUPPLY VOLTAGE: VCC = 4.5 to 5.5 V


    Original     		PDF UPC2711TB UPC2712TB UPC2711TB: UPC2712TB: UPC2711TB UPC2712TB C1H mmic UPC2712TB-E3 mmic e3 UPC2711TB-E3 c1g nec marking C1H mmic

    marking C3Z

    Abstract: PC3242TB-E3-A PC3242TB PC3242TB-E3
    Text: BIPOLAR ANALOG INTEGRATED CIRCUIT PC3242TB 3.3 V, SILICON GERMANIUM MMIC WIDE BAND AMPLIFIER DESCRIPTION The μPC3242TB is a silicon germanium monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.


    Original     		PDF PC3242TB PC3242TB M8E0904E marking C3Z PC3242TB-E3-A PC3242TB-E3

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT PC3240TB 3.3 V, SILICON MMIC WIDE BAND AMPLIFIER DESCRIPTION The μPC3240TB is a silicon monolithic integrated circuit designed as IF amplifier for DBS LNB. This device exhibits low noise figure and high power gain characteristics.


    Original     		PDF PC3240TB PC3240TB

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    2SK2500

    Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
    Text: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose


    Original     		PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    BYPASS Capacitors NEC

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC2711T 2.9 GHz WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES High power gain 13 dB TYP. @ f = 1 GHz Excellent frequency response 2.9 GHz TYP. @ 3 dB down below the gain at 0.1 GHz


    OCR Scan     		PDF uPC2711T PC2711T-E3 P12428EJ2V0DS0 WS60-00-1 VP15-00-3 IR35-00-3 C10535E) BYPASS Capacitors NEC

    Untitled

    Abstract: No abstract text available
    Text: ,r« 8 1993 NEC 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2708T UPC2711T FEATURES_ • WIDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) • 5 V SINGLE SUPPLY VOLTAGE • SUPER SM ALL PACKAGE


    OCR Scan     		PDF UPC2708T UPC2711T UPC2708T)

    MMIC SOT 363 marking 850

    Abstract: No abstract text available
    Text: 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FEATURES UPC2711TB UPC2712TB TYPICAL PERFORMANCE CURVES • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT- 363 package GAIN vs. FREQUENCY • SUPPLY VOLTAGE: V cc = 4.5 to 5.5 V • W IDEBAND RESPONSE:


    OCR Scan     		PDF UPC2711TB: UPC2712TB: UPC2711TB UPC2712TB UPC2712TB UPC2711/12TB UPC2711/12T, MMIC SOT 363 marking 850

    Untitled

    Abstract: No abstract text available
    Text: NEC 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER FEATURES g a in vs. UPC2708T UPC2711T frequency • WIDE FREQUENCY RESPONSE: 3 GHz • HIGH GAIN: 15 dB UPC2708T • SATURATED OUTPUT POWER: +10 dBm (UPC2708T) • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE


    OCR Scan     		PDF UPC2708T) UPC2708T UPC2711T UPC2711T qua08T UPC2708T/U PC2711T

    Untitled

    Abstract: No abstract text available
    Text: 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2708T UPC2711T FEATURES • W ID E FREQ UENC Y R ESPO NSE: 3 GHz • HIG H G AIN: 15 dB UPC 2708T • SA TUR ATED O U TPU T PO W ER: +10 dBm (UPC2708T) • INTERNAL CU R R EN T REG ULATIO N M INIM IZES GAIN CH ANG E O VER T EM PER A TU R E


    OCR Scan     		PDF UPC2708T UPC2711T 2708T) UPC2708T) 2708T 2711T UPC2708T-E3 UPC2711T-E3

    Untitled

    Abstract: No abstract text available
    Text: 3 GHz SILICON MMIC WIDE-BAND AMPLIFIER UPC2708T UPC2711T FEATURES • WIDE FREQUENCY RESPONSE: 3 G H z • HIGH GAIN: 15 dB U P C 2 7 0 8 T . SATURATED OUTPUT POWER: + 1 0 dBm (U P C 2 7 0 8 T ) • INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE


    OCR Scan     		PDF UPC2708T UPC2711T UPC2708T/UPC2711T UPC2708T-E3 UPC2711T-E3

    pt 7313

    Abstract: nec marking power amplifier upc
    Text: ” 5 V, SUPER MINIMOLD SILICON MMIC WIDEBAND AMPLIFIER FEATURES UPC2711TB UPC2712TB TYPICAL PERFORMANCE CURVES • HIGH D EN SITY SUR FA CE M O UNTING: 6 pin super m inim old or SO T- 363 package GAIN vs. FREQUENCY • SUPPLY VO LTAG E: V c c = 4.5 to 5.5 V


    OCR Scan     		PDF 2711TB: 2712TB: UPC2711TB UPC2712TB 2711TB PC2712TB UPC2711/12TB UPC2711TB, pt 7313 nec marking power amplifier upc

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿¿PC2709T 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER D E S C R IP T IO N The /¿PC2709T is a silicon monolithic integrated circuit designed as 1st IF amplifier for DBS tuners. This IC is packaged in minimold package.


    OCR Scan     		PDF uPC2709T PC2709T

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT ¿ iP C 2 7 0 8 T 5 V, MINIMOLD SILICON MMIC MEDIUM OUTPUT POWER AMPLIFIER DESCRIPTION The ^¡PC2708T is a silicon monolithic integrated circuits designed as buffer amplifier for BS/CS tuners. This 1C is packaged in minimold package.


    OCR Scan     		PDF PC2708T WS60-00-1 C10535E)

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    transistor t06

    Abstract: T06 transistor transistor t06 19 2SC 930 AF t06 93 UPC1678B LT 5219 UPC8103T UPC8108T
    Text: Silicon MMIC Selection Guide WIDEBAND AMPLIFIERS Part Number Typ. Fr*q. Range O 3 dB down MHz ELECTRICAL CHARACTERISTICS1 <f*500 MHz, «XC«frt a t noted T a * 25°C.) NF (dB) Icc Vcc (V) (mA) MIN TYP MAX TYP RLin RLout PSAT (dB) (dBm) (dB) ISOL (dB) MAX


    OCR Scan     		PDF