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    U922 Search Results

    U922 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    U9221008000BP Amphenol Communications Solutions MiniSAS HD, High Speed Input Output Connector, MINISASHD RUBBER DUST COVER Visit Amphenol Communications Solutions
    U9221A0M000BP Amphenol Communications Solutions MiniSAS HD, High Speed Input Output Connector, MOUNTING SCREW Visit Amphenol Communications Solutions
    U9221A0M001BP Amphenol Communications Solutions MiniSAS HD, High Speed Input Output Connector, MOUNTING SCREW Visit Amphenol Communications Solutions
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    U922 Price and Stock

    Vishay Siliconix SIHFU9220-GE3

    MOSFET P-CH 200V 3.6A TO251AA
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    DigiKey SIHFU9220-GE3 Tube 2,970 1
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    Vishay Siliconix IRFU9220

    MOSFET P-CH 200V 3.6A TO251AA
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    Stanley Electric Co MU92-2001

    LED LGT BAR 9X5MM RED DIFF 2PIN
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    Rochester Electronics LLC SFU9224TU

    P-CHANNEL POWER MOSFET
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    DigiKey SFU9224TU Bulk 987
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    Rochester Electronics LLC SFU9220TU

    P-CHANNEL POWER MOSFET
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    DigiKey SFU9220TU Bulk 761
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    U922 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    U9224 Fairchild Semiconductor Advanced Power MOSFET Original PDF

    U922 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SFR/U9220 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS on = 1.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -3.1 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -200V


    Original     		PDF -200V SFR/U9220 O-252

    TSF 系列

    Abstract: DCC6C
    Text: TOKEN TSF 聲表濾波器 聲表面波濾波器 Saw Filters 產品簡介 聲表濾波器是利用石英鈮酸鋰、鈦酸鋇晶體，具 有壓電效應的材料做成的。當晶體受到機械作用時， 產生與壓力成正比的電場的現象。具有壓電效應的


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SFR/U9220 Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS on = 1.5 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -3.1 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -200V


    Original     		PDF SFR/U9220 -200V

    EIA-541

    Abstract: IRFR120 IRFU120 U120
    Text: PD - 95029A IRFR9220PbF U9220PbF • Lead-Free www.irf.com 1 1/10/05 IRFR/U9220PbF 2 www.irf.com IRFR/U9220PbF www.irf.com 3 IRFR/U9220PbF 4 www.irf.com IRFR/U9220PbF www.irf.com 5 IRFR/U9220PbF 6 www.irf.com IRFR/U9220PbF Peak Diode Recovery dv/dt Test Circuit


    Original     		PDF 5029A IRFR9220PbF IRFU9220PbF IRFR/U9220PbF 20PbF EIA-541 IRFR120 IRFU120 U120

    irf 157

    Abstract: EIA-541 IRFR120 U120
    Text: PD - 95029A IRFR9220PbF U9220PbF • Lead-Free 1 IRFR/U9220PbF 2 IRFR/U9220PbF D-Pak TO-252AA Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WIT H AS S E MBLY LOT CODE 1234


    Original     		PDF 5029A IRFR9220PbF IRFU9220PbF IRFR/U9220PbF O-252AA) IRFR120 irf 157 EIA-541 IRFR120 U120

    95029 MARKING

    Abstract: IRFR9220PBF
    Text: PD - 95029 IRFR9220PbF U9220PbF • Lead-Free www.irf.com 1 2/19/04 IRFR/U9220PbF 2 www.irf.com IRFR/U9220PbF www.irf.com 3 IRFR/U9220PbF 4 www.irf.com IRFR/U9220PbF www.irf.com 5 IRFR/U9220PbF 6 www.irf.com IRFR/U9220PbF D-Pak TO-252AA Package Outline


    Original     		PDF IRFR9220PbF IRFU9220PbF IRFR/U9220PbF O-252AA) 95029 MARKING

    EIA-541

    Abstract: IRFR120 IRFU120 U120 IRFR9220PBF
    Text: PD - 95029A IRFR9220PbF U9220PbF • Lead-Free Document Number: 91283 1/10/05 www.vishay.com 1 IRFR/U9220PbF Document Number: 91283 www.vishay.com 2 IRFR/U9220PbF Document Number: 91283 www.vishay.com 3 IRFR/U9220PbF Document Number: 91283 www.vishay.com


    Original     		PDF 5029A IRFR9220PbF IRFU9220PbF IRFR/U9220PbF 12-Mar-07 EIA-541 IRFR120 IRFU120 U120 IRFR9220PBF

    Untitled

    Abstract: No abstract text available
    Text: SFR/U9224 Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS on = 2.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -2.5 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -250V


    Original     		PDF SFR/U9224 -250V

    Untitled

    Abstract: No abstract text available
    Text: SFR/U9224 Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS on = 2.4 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = -2.5 A Improved Gate Charge Extended Safe Operating Area D-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -250V


    Original     		PDF -250V SFR/U9224 O-252

    u930

    Abstract: No abstract text available
    Text: Keil Software, Inc. Application Note Using MON251 with the Intel Project Builder 251SB Target Board APNT_102 OVERVIEW This application note provides the information necessary for you to install the Keil 251 monitor program onto an 87C251SB16 microcontroller and operate that monitor in the Intel Project Builder


    Original     		PDF MON251 251SB 87C251SB16 23-Feb-97 D-85630 u930

    800FP-POT

    Abstract: u924 800F-AL01 800F-Q01 800FP-POT5 800F-1YM3 800FP-SM42 800FP-P3PN3G 800FP-SM22 800F-X01
    Text: 19374_5c_covRockwell_q5 5/25/06 10:20 AM Page 2 The Worldwide Push Button Solution Selection Guide Bulletin 800F 19374_5c_covRockwell_q5 5/25/06 10:20 AM Page 3 800F Push Buttons Allen-Bradley 22 mm 800F Push Buttons meet your specific push button needs. • Superior Quality Design


    Original     		PDF 800F-5M 800F-4P 800F-6P 800F-SG001E-EN-P 800F-SG001D-EN-P 800FP-POT u924 800F-AL01 800F-Q01 800FP-POT5 800F-1YM3 800FP-SM42 800FP-P3PN3G 800FP-SM22 800F-X01

    800F-1YM3

    Abstract: 800F-AL01 800FM-LMT44 800F-AMRG 800FP-SM42 800FM-LMP44 wiring diagram for 800f-xd7 Allen-Bradley 800FM 800FPSM22PX10 800FP-POT
    Text: 19374_5c_covRockwell_q5 5/25/06 10:20 AM Page 2 The Worldwide Push Button Solution Selection Guide Bulletin 800F 19374_5c_covRockwell_q5 5/25/06 10:20 AM Page 3 800F Push Buttons Allen-Bradley 22 mm 800F Push Buttons meet your specific push button needs. • Superior Quality Design


    Original     		PDF 800F-SG001D-EN-P 800F-SG001C-EN-P 800F-1YM3 800F-AL01 800FM-LMT44 800F-AMRG 800FP-SM42 800FM-LMP44 wiring diagram for 800f-xd7 Allen-Bradley 800FM 800FPSM22PX10 800FP-POT

    U420B

    Abstract: IRFR P-Channel MOSFET sfr 135 BALLAST CFL U210B U220B cfl ballast CFL lamp Complementary MOSFETs electronic ballast
    Text: Power MOSFETs for Compact Ballast Applications Power MOSFETs for Compact Ballast Applications Optoelectronics Drive Circuit with Passive Components Fairchild's complementary MOSFET solution offers a simplified driving circuit, with a few passive components, that eliminates the saturable auxiliary


    Original     		PDF Power247TM, U420B IRFR P-Channel MOSFET sfr 135 BALLAST CFL U210B U220B cfl ballast CFL lamp Complementary MOSFETs electronic ballast

    Untitled

    Abstract: No abstract text available
    Text: Advanced SFR/U9224 Power MOSFET FEATURES BV DSS = -250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S o n - ■ Lower Input Capacitance In = -2.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = -250V


    OCR Scan     		PDF SFR/U9224 -250V 200nF>

    Untitled

    Abstract: No abstract text available
    Text: SFR/U9220 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = -200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 fiA Max. @ VDS = -200V


    OCR Scan     		PDF SFR/U9220 -200V

    Untitled

    Abstract: No abstract text available
    Text: SFR/U9224 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge -2 5 0 V ^D S o n - 2 .4 In ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = -250V


    OCR Scan     		PDF SFR/U9224 -250V

    SFR 252 diode

    Abstract: p-channel 250V power mosfet
    Text: SFR/U9224 A d v a n c e d Power MOSFET FEATURES BV • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A {M a x. @ VDS = -250V


    OCR Scan     		PDF -250V SFR/U9224 SFR 252 diode p-channel 250V power mosfet

    p-channel 250V power mosfet

    Abstract: No abstract text available
    Text: Advanced SFR/U9224 P o w e r MOSFET FEATURES BV D SS • Lo w e r Input C a pa citance ■ Im proved G ate C harge ^ D S o n = ■ E xtended S afe O pe ra ting A rea ■ Lo w e r Leakage C urrent : 10 |a.A (M ax.) @ V DS = -250V ■ Lo w e r R D S (O N )


    OCR Scan     		PDF SFR/U9224 -250V p-channel 250V power mosfet

    mosfet yb

    Abstract: No abstract text available
    Text: Advanced SFR/U9220 P o w e r MOSFET FEATURES B V D SS • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea ■ Lo w e r Leakage C urrent : 10 |a.A M ax. @ V DS = -200V


    OCR Scan     		PDF SFR/U9220 -200V mosfet yb

    Untitled

    Abstract: No abstract text available
    Text: SFR/U9220 Advanced Power MOSFET FEATURES BV DSS = -200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^DS on - 1 -5 Q In = -3.1 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = -200V


    OCR Scan     		PDF SFR/U9220 -200V

    irfr9220

    Abstract: 9221 irfu9220 ELLS 110 ISE Electronics irfr9221 TI55
    Text: IRFR9220/9221 U9220/9221 P-CHANNEL POWER MOSFETS FEATURES D-PAK • Low er R ds on • Improved inductive ruggedness • Fast sw itching tim es • Rugged polysilicon gate cell structure • Low er input capacitance • Extended sa fe operating area


    OCR Scan     		PDF IRFR9220/9221 IRFU9220/9221 IRFR9220/U9220 -200V IRFR9221/U9221 -150V irfr9220 9221 irfu9220 ELLS 110 ISE Electronics irfr9221 TI55

    BR0015

    Abstract: RT 2070 L TLS251 MU03-2250 MU16 GO 635 LT9000D MV57173 HLMP-0301 HLMP-2350
    Text: u ft fr Z if. r, HP « •T„ = 25'Ci m n.% f í* ¡5 > 2 0 ‘A * deg ■m 100 A/' ft k ë fë « ¡ « il. /, Ir ;m A 1 Vr :V ' 17 \, = 25'C-' ■Ë ti± » ffrS K m n Vu lr 'm A '1 imA:- V; C: 635 4 .8 20 2 .0 20 30 —40—85 25 H L M P-2300 #Lf£ 635


    OCR Scan     		PDF HLMP-T200 HLMP-2300 HLMP-2350 HLMP-2655 HLMP-2685 HLMP-0301 MV57173 35/Dot SLF-102B SLF-104B BR0015 RT 2070 L TLS251 MU03-2250 MU16 GO 635 LT9000D HLMP-0301 HLMP-2350

    transistor BU 921 T

    Abstract: 922P BU921 oms 450 BU920T BU922T 921P 922p ic TO3 package RthJC BU920
    Text: 7qsqg37 0056575 □ • / T ^ 3 3 ^ ' 2 . ct SGS-THOMSON bÜ IIS fÆ U922/P/PFI/T S G S-TH0MS0N 3QE D HIGH VOLTAGE POWER DISSIPATION . HIGH VOLTAGE POWER DARLINGTON ■ AUTOMOTIVE IGNITION APPLICATIONS ■ HIGH CURRENT DESCRIPTION The BU920/921/922, BU920P/921P/922P, BU920PFI/BU921PFI/U922PFI and BU920T/921T/922T


    OCR Scan     		PDF 7qHqS37 BU922/P/PFI/T BU920/921/922, BU920P/921P/922P, BU920-PFI/BU921PFI/BU922PFI BU920T/921T/922T OT-93 ISOWATT218 O-220 O-218) transistor BU 921 T 922P BU921 oms 450 BU920T BU922T 921P 922p ic TO3 package RthJC BU920

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40