L43 SMD
Abstract: S43 SMD A70 SMD A73 smd A72 SMD l44 smd p74 smd SMD l43 s43 smd marking code S44 SMD
Text: Schottky Barrier Diodes Multiple Terminals Part No. Marking Code BAT54TWS BAT54ADWS BAT54CDWS BAT54SDWS BAS40TWS BAS40ADWS BAS40CDWS BAS40SDWS BAS70TWS BAS70ADWS BAS70CDWS BAS70SDWS L4 L42 L43 L44 S40 S42 S43 S44 A70 A72 A73 A74 TST0051C-331F5 UW TST0073C-732F5
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BAT54TWS
BAT54ADWS
BAT54CDWS
BAT54SDWS
BAS40TWS
BAS40ADWS
BAS40CDWS
BAS40SDWS
BAS70TWS
BAS70ADWS
L43 SMD
S43 SMD
A70 SMD
A73 smd
A72 SMD
l44 smd
p74 smd
SMD l43
s43 smd marking code
S44 SMD
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S43 SMD
Abstract: L43 SMD A70 SMD A72 SMD S43 MARKING SMD l43 S42 SMD S44 SMD A73 smd SMD L44
Text: Schottky Barrier Diodes Multiple Terminals Part No. Marking Code BAT54TWS BAT54ADWS BAT54CDWS BAT54SDWS BAS40TWS BAS40ADWS BAS40CDWS BAS40SDWS BAS70TWS BAS70ADWS BAS70CDWS BAS70SDWS L4 L42 L43 L44 S40 S42 S43 S44 A70 A72 A73 A74 TST0051C-331F5 UW TST0073C-732F5
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BAT54TWS
BAT54ADWS
BAT54CDWS
BAT54SDWS
BAS40TWS
BAS40ADWS
BAS40CDWS
BAS40SDWS
BAS70TWS
BAS70ADWS
S43 SMD
L43 SMD
A70 SMD
A72 SMD
S43 MARKING
SMD l43
S42 SMD
S44 SMD
A73 smd
SMD L44
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marking code p60 SMD
Abstract: TSD023-729WS TSD054W TSD0341 TSD023-54WU TSD033-103WS SMD MARKING CODE S7 A70 SMD Marking "s3" Schottky barrier SMD MARKING CODE s4
Text: Schottky Barrier Diodes Two Terminals Part No. TSD013-730F3 Marking Code Max. Average Rectified Current lo(AV) (mA) Q Peak Repetitive Reverse Voltage SMD Schottky Max. Forward Voltage @ IF Max. Reverse Current @ VR R TSD013-730WU TSD013L-720WU TSD023-54WU
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TSD013-730F3
BAS85
LL5711
LL6263
LL103C
LL103B
LL103A
LL101C
LL101B
LL101A
marking code p60 SMD
TSD023-729WS
TSD054W
TSD0341
TSD023-54WU
TSD033-103WS
SMD MARKING CODE S7
A70 SMD
Marking "s3" Schottky barrier
SMD MARKING CODE s4
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smd diode ZENER marking code J3
Abstract: HDR2x7 zener diode J3 programmer schematic R2h DIODE SMD marking code R1D SMD MARKING CODE j3 diode marking r2d smd code marking r2d sot23 Zener diode smd marking c6
Text: 5 4 3 2 1 15 SW1A DIG-8 SW1B DIG-8 C2 100pF C3 100pF C4 100pF C5 .01uF C6 22pF C7 22pF D 2 1 1 R2B 220 2 R2A 220 D 16 15 16 +3V SW1G DIG-8 SW1D DIG-8 11 9 12 SW1E DIG-8 6 6 8 R2F 220 8 5 R2H 220 5 4 7 3 SW1C DIG-8 R2E 220 4 R2D 220 7 R2G 220 3 R2C 220 13 10
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100pF
TSSOP-24
CONRA-10P-100X-EEProg
20QN50T14040
74VHC221A
LP2981
smd diode ZENER marking code J3
HDR2x7
zener diode J3
programmer schematic
R2h DIODE
SMD marking code R1D
SMD MARKING CODE j3
diode marking r2d
smd code marking r2d sot23
Zener diode smd marking c6
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smd transistor marking B5
Abstract: smd transistor marking j5 MARKING SMD transistor R44 smd transistor marking j6 smd transistor marking j9 MARKING SMD transistor R43 smd transistor marking 12H smd transistor J6 surface mount stereo jack 3.5mm c3840
Text: w WM8711-EV1M WM8711 Evaluation Board User Handbook INTRODUCTION The WM8711 is a portable audio CODEC with headphone driver and programmable sample rates. This evaluation platform and documentation should be used in conjunction with the latest version of the WM8711 datasheet. The datasheet gives device functionality information as well as timing and
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WM8711-EV1M
WM8711
WM8711.
WM8711-EV1B
smd transistor marking B5
smd transistor marking j5
MARKING SMD transistor R44
smd transistor marking j6
smd transistor marking j9
MARKING SMD transistor R43
smd transistor marking 12H
smd transistor J6
surface mount stereo jack 3.5mm
c3840
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28QN50T15050
Abstract: schematic diagram dc-dc EZ WEB LYNX SMM205 TP1-TP24 dongle diagram flow design smd marking 1N4148 HP34401A TP10 smd MARKING c17
Text: REVISION - B SMM205 Evaluation Kit Quik-Start User’s Guide SM205EV General Description The SMM205EVAL kit is a fully functional printed circuit board designed to demonstrate all the features of the SMM205 Nonvolatile, Dual Channel Voltage Marginer and Active DC Output Controller ADOC . The
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SMM205
SM205EV
SMM205EVAL
SMM205EV
28QN50T15050
schematic diagram dc-dc
EZ WEB LYNX
TP1-TP24
dongle diagram flow design
smd marking 1N4148
HP34401A
TP10
smd MARKING c17
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Untitled
Abstract: No abstract text available
Text: MSiCSS10120CC Available Silicon Carbide Dual Schottky Power Rectifier 10A, 1200V DESCRIPTION This high current Silicon Carbide Schottky is rated up to 1200 V and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing
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MSiCSS10120CC
T4-LDS-0107-1,
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Untitled
Abstract: No abstract text available
Text: SMD Type SMD Type Transistors IC Product specification BSS64 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 1 0.55 NPN general purpose amplifier +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Absolute Maximum Ratings Ta = 25 Symbol Rating
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BSS64
OT-23
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ZXCT1109EV1
Abstract: No abstract text available
Text: ZXCT1109EV1 USER GUIDE Performance Introduction • Current Monitor with wide supply range: 2.5V to 36V • Demonstrates high-side current monitoring up to 4A • Resistors on PCB set sense voltage and voltage gain The ZXCT1109EV1 evaluation circuit can simply be used to demonstrate the ZXCT1109
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ZXCT1109EV1
ZXCT1109
ZXCT1110
ZXCT1107
D-81541
A1103-04,
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Untitled
Abstract: No abstract text available
Text: ZXCT1107EV1 USER GUIDE Performance Introduction • Current Monitor with wide supply range: 2.5V to 36V • Demonstrates high-side current monitoring up to 4A • Resistors on PCB set sense voltage and voltage gain The ZXCT1107EV1 evaluation circuit can simply be used to demonstrate the ZXCT1107
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ZXCT1107EV1
ZXCT1107
ZXCT1110
ZXCT1109
D-81541
A1103-04,
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Untitled
Abstract: No abstract text available
Text: ZXCT1110EV1 USER GUIDE Performance Introduction • Current Monitor with wide supply range: 2.5V to 36V • Demonstrates high-side current monitoring up to 4A • Resistors on PCB set sense voltage and voltage gain The ZXCT1110EV1 evaluation circuit can simply be used to demonstrate the ZXCT1110
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ZXCT1110EV1
ZXCT1110
ZXCT1109
ZXCT1107
D-81541
A1103-04,
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smd transistor marking j6
Abstract: 6227CAZ SMD TRANSISTOR MARKING by 4p SMD TRANSISTOR MARKING 3p smd transistor marking j8 SMD TRANSISTOR MARKING 6B smd transistor marking j5 transistor 5d smd SMD TRANSISTOR MARKING 5c smd transistor 5c
Text: ISL6227EVAL2Z Dual Switcher Evaluation Board Setup Procedure Application Note This document describes the setup procedure for the ISL6227 Evaluation Board dual switcher implementation. For information about the DDR application, please refer to Application Note 1067, “ISL6227EVAL1 DDR Evaluation
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ISL6227EVAL2Z
ISL6227
ISL6227EVAL1
AN1068
smd transistor marking j6
6227CAZ
SMD TRANSISTOR MARKING by 4p
SMD TRANSISTOR MARKING 3p
smd transistor marking j8
SMD TRANSISTOR MARKING 6B
smd transistor marking j5
transistor 5d smd
SMD TRANSISTOR MARKING 5c
smd transistor 5c
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01071
Abstract: S10120
Text: MSiCSS10120CC Available Silicon Carbide Dual Schottky Power Rectifier 10A, 1200V DESCRIPTION This high current Silicon Carbide Schottky is rated up to 1200 V and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing
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MSiCSS10120CC
O-257
MSiCSN10120CC
T4-LDS-0107-1,
01071
S10120
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1n6844
Abstract: 1N6844U3
Text: 1N6844U3 Available on commercial versions SILICON SCHOTTKY POWER RECTIFIER 40 A, 100 V Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/679 DESCRIPTION This low-profile 1N6844U3 Schottky rectifier device is military qualified up to a JANTXV level
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1N6844U3
MIL-PRF-19500/679
1N6844.
MIL-PRF-19500/679.
1N6844U3
T4-LDS-0233,
1n6844
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Untitled
Abstract: No abstract text available
Text: MSiCSS05120CC Compliant Silicon Carbide Dual Schottky Power Rectifier 5A, 1200V DESCRIPTION These high current Silicon Carbide Schottkys are rated up to 1200 V and offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to
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MSiCSS05120CC
T4-LDS-0103-1,
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Untitled
Abstract: No abstract text available
Text: MSiCSS10060CC Compliant Silicon Carbide Dual Schottky Power Rectifier 10A, 600V DESCRIPTION This high current Silicon Carbide Schottky is rated up to 600 V and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing
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MSiCSS10060CC
T4-LDS-0106-1,
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Untitled
Abstract: No abstract text available
Text: MSiCSS10060CC Compliant Silicon Carbide Dual Schottky Power Rectifier 10A, 600V DESCRIPTION This high current Silicon Carbide Schottky is rated up to 600 V and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing
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MSiCSS10060CC
T4-LDS-0106-1,
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Untitled
Abstract: No abstract text available
Text: 1N6845U3 Compliant Qualified Levels: JAN, JANTX, and JANTXV 45 Volts, 30 Amp Schottky Rectifier Ceramic Surface Mount Qualified per MIL-PRF-19500/682 DESCRIPTION This low-profile 1N6845U3 Schottky rectifier device is military qualified up to a JANTXV level
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1N6845U3
MIL-PRF-19500/682
1N6845U3
1N6845.
MIL-PRF-19500/682.
T4-LDS-0128,
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Untitled
Abstract: No abstract text available
Text: 1N6845U3 Compliant Qualified Levels: JAN, JANTX, and JANTXV 45 Volts, 30 Amp Schottky Rectifier Ceramic Surface Mount Qualified per MIL-PRF-19500/682 DESCRIPTION This low-profile 1N6845U3 Schottky rectifier device is military qualified up to a JANTXV level
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1N6845U3
MIL-PRF-19500/682
1N6845U3
1N6845.
MIL-PRF-19500/682.
T4-LDS-0128,
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Untitled
Abstract: No abstract text available
Text: 2. Soldering the headers Before using your click board , make sure to solder 1x8 male headers to both left and right side of the board. Two 1x8 male headers are included with the board in the package. Light click 2 1 3 4. Essential features 1. Introduction
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PD15-22CTR8
MAX6106
MCP3201
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Untitled
Abstract: No abstract text available
Text: MSiCSS10120 Compliant Silicon Carbide Schottky Power Rectifier 10A, 1200V DESCRIPTION These high current Silicon Carbide Schottkys are rated up to 1200 V and offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to
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MSiCSS10120
T4-LDS-0107-3,
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Untitled
Abstract: No abstract text available
Text: MSiCSS10060CC Compliant Silicon Carbide Dual Schottky Power Rectifier 10A, 600V DESCRIPTION This high current Silicon Carbide Schottky is rated up to 600 V and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing
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MSiCSS10060CC
T4-LDS-0106-1,
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2n7465
Abstract: IRHY7330CMSE 2n7465u3 676c 2n7566 2N7466 irhy7430cmse SMD transistor 23 TO-276 irhy7430
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 March 2008. MIL-PRF-19500/676D 11 December 2007 SUPERSEDING MIL-PRF-19500/676C 22 December 2004 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT RADIATION HARDENED
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MIL-PRF-19500/676D
MIL-PRF-19500/676C
2N7465T3
2N7466T3
MIL-PRF-19500.
2n7465
IRHY7330CMSE
2n7465u3
676c
2n7566
2N7466
irhy7430cmse
SMD transistor 23
TO-276
irhy7430
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smd diode Uj 39
Abstract: smd code Diode U9
Text: SMD Zener Diode CZRF2V4B-HF Thru CZRF39VB-HF Voltage 2.4 to 39 Volts Power 200 mWatts RoHS Device Halogen Free 1005/SOD-323F Features 0.102 2.60 0.095(2.40) -200mW Power Dissipation. -High Voltages from 2.4 ~ 39 V. 0.051(1.30) 0.043(1.10) -Designed for mounting on small surface.
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CZRF39VB-HF
1005/SOD-323F
-200mW
1005/SOD-323F
MIL-STD-750
OD-323F)
QW-G2009
smd diode Uj 39
smd code Diode U9
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