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    TYPE EM 2222 - E Search Results

    TYPE EM 2222 - E Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CO-059FTYPEMM-050 Amphenol Cables on Demand Amphenol CO-059FTYPEMM-050 F-Type Coax Cable - RG59 75 Ohm Coaxial Cable - Type F Male / Type F Male (TV/CABLE/SATELLITE) 50 ft Datasheet
    CO-059FTYPEMM-006 Amphenol Cables on Demand Amphenol CO-059FTYPEMM-006 F-Type Coax Cable - RG59 75 Ohm Coaxial Cable - Type F Male / Type F Male (TV/CABLE/SATELLITE) 6 ft Datasheet
    CO-059FTYPEMM-010 Amphenol Cables on Demand Amphenol CO-059FTYPEMM-010 F-Type Coax Cable - RG59 75 Ohm Coaxial Cable - Type F Male / Type F Male (TV/CABLE/SATELLITE) 10 ft Datasheet
    CO-059FTYPEMM-025 Amphenol Cables on Demand Amphenol CO-059FTYPEMM-025 F-Type Coax Cable - RG59 75 Ohm Coaxial Cable - Type F Male / Type F Male (TV/CABLE/SATELLITE) 25 ft Datasheet
    CO-059FTYPEMM-003 Amphenol Cables on Demand Amphenol CO-059FTYPEMM-003 F-Type Coax Cable - RG59 75 Ohm Coaxial Cable - Type F Male / Type F Male (TV/CABLE/SATELLITE) 3 ft Datasheet

    TYPE EM 2222 - E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Ö23b32ü 0017300 1 32E D ISIP NPN Silicon Switching Transistor SXT 2222 A SIEMENS/ SPCLi SEMICONDS r - s s '- if • High current gain: 0.1 to 50 0 m A • Low collector-em itter saturation voltage Type M a rk in g O rd e rin g c o d e fo r v e rs io n s in b u lk


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    PDF 23b32Ã 23b320 Q017312

    type em 2222 - E

    Abstract: V/S-808
    Text: 2222 808 2 0 5 mm FILM DIELECTRIC TRIMMERS Housing diameter 5 mm For consu mer arid industria f eq ii 3prnem: QUICK R E F E R E N C E DATA r^min^max - tr 1.6/5 to 3.S/2? pF Rated voltage 150 V Housing diamete- 6 mm Climatic category 40/85/21 for PC versions and


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    PDF IEC418-1 1EC63 type em 2222 - E V/S-808

    transistor tt 2222

    Abstract: TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 BLU99 4312 020 36642
    Text: bSE T> 711002b GGti27fi7 0^7 « P H I N BLU99 BLU99/SL PHILIPS INTERNATIONAL U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the u.h.f. band. The transistor is also very suitable fo r application in the 900 MHz m obile radio band.


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    PDF 711002b GGb27fi7 BLU99 BLU99/SL OT122A) BLU99/SL OT122D) transistor tt 2222 TT 2222 npn TRIMMER capacitor 5-60 pF TT 2222 ic TT 2222 4312 020 36642

    mu222

    Abstract: 1b33
    Text: 2222 809 07 N._ FILM DIELECTRIC TRIMMERS 9 * ft * H igh i-smp-s ratu m type Housing dim&iWiQn-Si 11 mm x 14 mm x 9 mm IrOr ba sic- g rid oi 2,54- mm For professional applseaisons, e-g, fine adj:u-stma«i of h.L Juried c-irciifas, capacitive volume or


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    PDF

    BLY89A

    Abstract: transistor h 1061 Transistor bly89a D 1062 transistor transistor ALY 36 transistor 1971 yl 1060 Transistor ALY c2
    Text: P H I L I P S IN T E R N A T IO N A L MAINTENANCE TYPE M IE D H 7 1 1 0 0 2 b 0 0 2 7 ^ 5 1 ^•P H IN BLY89A T~33~/3 V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters with a supply voltage of 13,5 V . The transistor is resistance stabilized. Every


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    PDF 711002b BLY89A -T-33-/3 PL-25W BLY89A transistor h 1061 Transistor bly89a D 1062 transistor transistor ALY 36 transistor 1971 yl 1060 Transistor ALY c2

    IEC418-1

    Abstract: IEC68 jv2222
    Text: 2222 808 2 0 5 mm FILM DIELECTRIC TRIMMERS o Housing diameter 5 mm o For consumer and industrial equipm ent Q UICK REFERENCE D A T A Cm m -^m ax 1.5/5 to 3.5/27 pF Rated voltage 150 V Housing díam ete' 5 rnrn C lim atic category 40/85/21 fo r PC versions and


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    PDF IEC68 IEC418-1 jv2222

    transistor SMD t34

    Abstract: t34 transistor MCB030 transistor smd Catalogue transistor SMD Z2 BLU56 k 1358 SMD transistor Z2 transistor 6 pin SMD Z2 UHF TRANSISTOR
    Text: Philips Semiconductors ?HÜÔ2b Data sheet status Product specification date of issue January 1991 □□bT3TG 3TT BiPHIN BLU56 UHF power transistor FEATURES QUICK REFERENCE DATA RF perform ance at Ts < 60 °C in a com m on em itter class-B test circuit see


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    PDF BLU56 OT223 OT223 MCB027 transistor SMD t34 t34 transistor MCB030 transistor smd Catalogue transistor SMD Z2 BLU56 k 1358 SMD transistor Z2 transistor 6 pin SMD Z2 UHF TRANSISTOR

    transistor tt 2222

    Abstract: BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56
    Text: PHILIPS INTERNATIONAL MIE D B 711üaEb ÜQ2flQ0ci 1 B P H I N A J L B LLY93 Y93A M A IN T EN A N C E TYPE T~33~/3 V.H.F. POWER TRANSISTOR '\ N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industriar and military transmitters with a supply voltage of 28 V, The transistor is resistance stabilized. Every tran­


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    PDF LY93A BLY93A transistor tt 2222 BLY93A TT 2222 ic TT 2222 TT 2222 npn T-33-73 LY93A ROTA E Series IEC134 SOT-56

    BLV57

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE fciTE D • bb53T31 002^050 bb2 BLV57 U.H.F. LINEAR PUSH-PULL POWER TRANSISTOR Two n-p-n silicon planar epitaxial transistor sections in one envelope to be used as push-pull amplifier, prim arily intended fo r use in linear u.h.f. television transmitters and transposers.


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    PDF bb53T31 BLV57 BLV57

    transistor rf cm 1104

    Abstract: BLY92A transistor rf m 1104 transistor m 1104 TRANSISTOR D 1978 T3309 4312 020 36640 transistor 1971 1102 transistor
    Text: 11 P H I L I P S INTERNATIONAL MAINTENANCE TYPE MIE » B 71 1 0 ê 2 t i QGSTTTB 3 ESPHIN Jl BLY92A T -3 3 -0 ? V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and military transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and


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    PDF BLY92A T-33-Ã OT-48/2. transistor rf cm 1104 BLY92A transistor rf m 1104 transistor m 1104 TRANSISTOR D 1978 T3309 4312 020 36640 transistor 1971 1102 transistor

    122d transistor

    Abstract: Si 122D 122d BLU11/Si 122D transistor 4312
    Text: bSE. T> 711002b 00bS7D0 47T M P H I N BLU11/SL PHILIPS INT ERN ATI ON AL U.H.F. POW ER TR A N S IS TO R N-P-N silicon planar epitaxial transistor prim arily intended fo r use in mobile transmitters in the 470 MHz band. Features • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile.


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    PDF OT-122D) BLU11/SL 122d transistor Si 122D 122d BLU11/Si 122D transistor 4312

    B303D

    Abstract: TT 2222 npn transistor tt 2222 transistor npn 2xi transistor sot t06 FTC 960 trimmer PT 10 TT 2222 ka band transistor
    Text: b5E » H 71106Eb D0b3DEÛ 07T « P H I N BLV91/SL PHILIPS INTERNATIONAL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in mobile radio transm itters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.


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    PDF BLV91/SL OT-172D) 711005b DGb3034 BLV91/SL B303D TT 2222 npn transistor tt 2222 transistor npn 2xi transistor sot t06 FTC 960 trimmer PT 10 TT 2222 ka band transistor

    4312 020 36640

    Abstract: ferroxcube wideband hf choke
    Text: PHILIPS INTERNAT ION AL b5E D 751 I IPHIN Ei 711002b BLV75/12 V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in m obile radio transm itters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile


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    PDF 711002b BLV75/12 OT-119) 4312 020 36640 ferroxcube wideband hf choke

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bBE D • bbSBIBl 002flflS4 b7fl * A P X BLU60/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features


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    PDF 002flflS4 BLU60/12 OT-119

    Untitled

    Abstract: No abstract text available
    Text: b b 5 3 c1 3 1 Philips S em iconductors 0030055 T27 M A P X Product specification VHF linear push-pull power MOS transistor BLF348 N AUER PHILIPS/DISCRETE b 'lE lT PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability


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    PDF BLF348 OT262 bbS3831 UCB237

    ac 0624 transistor 17-33

    Abstract: No abstract text available
    Text: Philips Semiconductors • b b 5 3 T 31 D D 3QDfib STD H A PX Product specification UHF power MOS transistor BLF521 N AUER PHILIPS/DISCRETE FEATURES b^E 3> ■ PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability


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    PDF BLF521 MBB072-! OT172D CA766 ac 0624 transistor 17-33

    2222-809-05002

    Abstract: philips e3 Philips Electrolytic Capacitor 16v BLU60-12 B6PN
    Text: PHILIPS INTERNAT IO NAL bSE D E3 7110ÖSb DDLE7S1 =131 BLU60/12 l U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optim um temperature profile.


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    PDF 711002b OT-119 BLU60/12 2222-809-05002 philips e3 Philips Electrolytic Capacitor 16v BLU60-12 B6PN

    BLU45/12

    Abstract: No abstract text available
    Text: PHILIPS INTERNATIONAL b5E D • 711002b 00b273b b25 ■ PHIN BLU45/12 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor in SOT-119 envelope prim arily intended fo r use in mobile radio transmitters in the 470 MHz communications band. Features


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    PDF 711002b 00b273b BLU45/12 OT-119 G0bS743 BLU45/12

    Untitled

    Abstract: No abstract text available
    Text: Philips S em iconductors bb53T31 0 0 30 1 7 3 6B3 • APX UHF push-pull power MOS transistor N AUER PHILIPS/DISCRETE Product specification BLF548 b^E D . — PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability


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    PDF bb53T31 BLF548 MSB008 OT262A2 MRA526

    Untitled

    Abstract: No abstract text available
    Text: Philips S em iconductors D03004b M MB A P X Product specification VHF power MOS transistor BLF346 N AMER PHILIPS/DISCRETE FEATURES b^E D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures


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    PDF D03004b BLF346 MB8072-S MSB006 OT119 003DDS4 MBA379

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'lE D bb53^31 □DE‘1131 b'U I IAPX BLV91/SL UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor designed fo r use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors fo r an optim um temperature profile.


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    PDF BLV91/SL OT-172D)

    BJE 42

    Abstract: 9 BJE 42
    Text: Philips S em iconductors bbS3R31 003010b H R Ap y Product spec if ication UHF power MOS transistor BLF542 N AMER PHILIPS/DISCRETE FEATURES bRE T> PIN CONFIGURATION • High power gain < • Easy power control • Gold metallization '" " “v o • Good thermal stability


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    PDF bbS3R31 003010b BLF542 MBA931 MRA732 MRA971 BJE 42 9 BJE 42

    transistor 9567

    Abstract: 271 Ceramic Disc Capacitors 72741 i 72741 BLF521 IEC134 JLF521 9567 transistor
    Text: Philips Sem iconductors UHF power MOS transistor PHILIPS INTERNATIONAL FEATURES 7- 3 1 - 0 7 ' 5bE ]> BLF521 7110â2Li D D M 3 ci3l4 70S • PHIN PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability


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    PDF BLF521 OT172D OT172D transistor 9567 271 Ceramic Disc Capacitors 72741 i 72741 BLF521 IEC134 JLF521 9567 transistor

    Untitled

    Abstract: No abstract text available
    Text: N AtfER PHJLIPS/DISCRETE APX bbS3^31 D03TD32 b47 b'lE ]> BLV38 A VHF LINEAR PUSH-PULL POW ER TRANSISTOR Push-pull npn silicon planar epitaxial transistor prim arily intended fo r use in linear VH F television transmitters vision or sound amplifiers . Features


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    PDF D03TD32 BLV38