TYPE ELEC 8222 - E Search Results

TYPE ELEC 8222 - E Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TB67H480FNG		Toshiba Electronic Devices & Storage Corporation	Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5/ PHASE input type
TB67H481FNG		Toshiba Electronic Devices & Storage Corporation	Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5/ IN input type
TB67S580FNG		Toshiba Electronic Devices & Storage Corporation	Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=1.6
TB67S581FNG		Toshiba Electronic Devices & Storage Corporation	Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5
TB67S589FTG		Toshiba Electronic Devices & Storage Corporation	Stepping Motor Driver / Bipolar Type / Vout(V)=50 / Iout(A)=3.0 / CLK input type / VQFN32

TYPE ELEC 8222 - E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Q002 Abstract: JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 13-May-2003 tbhk M58BW016DB7 8835h Text: M58BW016DB M58BW016DT 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories Feature summary • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)	Original	M58BW016DB M58BW016DT 512Kb 56MHz Q002 JESD97 M58BW016D M58BW016DB M58BW016DT PQFP80 13-May-2003 tbhk M58BW016DB7 8835h	PDF
M58BW016 Abstract: Q002 M58BW016DB M58BW016DT M58BW016FB M58BW016FT PQFP80 Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512Kb x32, Boot Block, Burst 3V supply Flash memories Features • Supply voltage – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers – VPP = 12V for Fast Program (optional)	Original	M58BW016DB M58BW016DT M58BW016FT M58BW016FB 512Kb 56MHz PQFP80 M58BW016 Q002 M58BW016DT M58BW016FB PQFP80	PDF
M58BW016BB Abstract: M58BW016BT M58BW016DB M58BW016DT PQFP80 Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PE4FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers	Original	M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 100ns 56MHz PQFP80 M58BW016B LBGA80 M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80	PDF
M58BW016DB Abstract: M58BW016xB M58BW016BB M58BW016BT M58BW016DT PQFP80 Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers	Original	M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 100ns 56MHz PQFP80 M58BW016B M58BW016DB M58BW016xB M58BW016BB M58BW016BT M58BW016DT PQFP80	PDF
M58BW016xB Abstract: M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80 Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PE4FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers	Original	M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 100ns 56MHz PQFP80 M58BW016B LBGA80 M58BW016xB M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80	PDF
M58BW016BB Abstract: M58BW016BT M58BW016DB M58BW016DT PQFP80 Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers	Original	M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 56MHz PQFP80 M58BW016B LBGA80 M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80	PDF
M58BW016BB Abstract: M58BW016BT M58BW016DB M58BW016DT PQFP80 Text: M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit 512Kb x32, Boot Block, Burst 3V Supply Flash Memories PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VDD = 2.7V to 3.6V for Program, Erase and Read – VDDQ = VDDQIN = 2.4V to 3.6V for I/O Buffers	Original	M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 512Kb 56MHz PQFP80 M58BW016B LBGA80 M58BW016BB M58BW016BT M58BW016DB M58BW016DT PQFP80	PDF
Untitled Abstract: No abstract text available Text: M58BW016DB M58BW016DT M58BW016FT M58BW016FB 16 Mbit 512 Kbit x 32, boot block, burst 3 V supply Flash memories Features • Supply voltage – VDD = 2.7 V to 3.6 V for program, erase and read – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers – VPP = 12 V for fast program (optional)	Original	M58BW016DB M58BW016DT M58BW016FT M58BW016FB PQFP80	PDF
M58BW16FB Abstract: M58BW32FT M58BW32FB V/B/512 Text: M58BW16F, M58BW32F Features M58BW16F, M58BW32F 16Mb or 32Mb x32, Boot Block, Burst 3.3V Supply Flash Memory Features • Security – 64-bit unique device identifier (UID) • Fast programming – Write to buffer and program capability (8 double words) • Optimized for FDI drivers	Original	M58BW16F, M58BW32F M58BW32F M58BW16F 09005aef8457ee46 16-32f M58BW16FB M58BW32FT M58BW32FB V/B/512	PDF
F8800h-F8FFFh Abstract: M58BW32FB Text: M58BW16F M58BW32F 16 or 32 Mbit x 32, boot block, burst 3.3 V supply Flash memories Features Supply voltage – VDD = 2.7 V to 3.6 V (45 ns) or VDD = 2.5 V to 3.3 V (55 ns) – VDDQ = VDDQIN = 2.4 V to 3.6 V for I/O buffers High performance – Access times: 45 and 55 ns	Original	M58BW16F M58BW32F M58BW32F F8800h-F8FFFh M58BW32FB	PDF
dy 255 Abstract: 74s405 H R C M F 2J 225 Fairchild 9960 nixie driver 9614 line driver ci 8602 gn block diagram FJH211 Fairchild msi cul9960 variable frequency circuit diagram using IC 555 Text: IN THE, BOSTON - 6 17- 4 4 * A SUBSIDiA) ./ OF DUCOMMUN INCORPOfiATED S, MASS vw . JU N E 1 97 S Fairchild Semiconductor TTL Data Book Contents And Section Selector If you know the correct 5400, 7400, 9300 or 9600 device type number, find the correct page in the	OCR Scan		PDF