LE ATB S2W
Abstract: Q65110A8183 leatbs2w
Text: OSTAR - SMT Lead Pb Free Product - RoHS Compliant LE ATB S2W Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip SMT Technologie mit Glasabdeckung • Besonderheit des Bauteils: extrem hohe
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JESD22-A114-D
D-93055
LE ATB S2W
Q65110A8183
leatbs2w
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Untitled
Abstract: No abstract text available
Text: OSTAR - SMT Lead Pb Free Product - RoHS Compliant LE ATB S2W Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip SMT Technologie mit Glasabdeckung • Besonderheit des Bauteils: extrem hohe
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JESD22-A114-D
D-93055
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PDF
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Untitled
Abstract: No abstract text available
Text: OSTAR - SMT Lead Pb Free Product - RoHS Compliant LE A S2W, LE T S2W, LE B S2W Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip SMT Technologie mit Glasabdeckung • Besonderheit des Bauteils: extrem hohe
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D-93055
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J-STD-020B
Abstract: LE ATB S2W-JW-1 LBMB-24 G
Text: OSTAR - SMT Lead Pb Free Product - RoHS Compliant LE ATB S2W Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip SMT Technologie mit Glasabdeckung • Besonderheit des Bauteils: extrem hohe
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JESD22-A114-D
D-93055
J-STD-020B
LE ATB S2W-JW-1 LBMB-24 G
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NTC Thermistor S 234
Abstract: KY 3001/A mp3 player one chip ntc 10 epcos 5 x 7 led dot matrix A114 es als 004 b 537 IEC 62471 KY Series
Text: OSTAR - SMT Lead Pb Free Product - RoHS Compliant LE A S2W, LE T S2W, LE B S2W Vorläufige Daten / Preliminary Data Besondere Merkmale Features • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip SMT Technologie mit Glasabdeckung • Besonderheit des Bauteils: extrem hohe
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Original
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D-93055
NTC Thermistor S 234
KY 3001/A
mp3 player one chip
ntc 10 epcos
5 x 7 led dot matrix
A114 es
als 004
b 537
IEC 62471
KY Series
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OHL02520
Abstract: nm533 LETS2W
Text: OSTAR - SMT Lead Pb Free Product - RoHS Compliant LE A S2W LE T S2W LE B S2W LE A S2W LE T S2W; LE B S2W Besondere Merkmale Features • Gehäusetyp: Kompakte Lichtquelle in Multi-Chip SMT Technologie mit Glasabdeckung • Besonderheit des Bauteils: extrem hohe
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Original
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JESD22-A114-D
D-93055
OHL02520
nm533
LETS2W
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D821A
Abstract: d823a
Text: • 1N821 THRU 1N829 AVAILABLE IN CD821 JANC thru • MONOLITHIC TEMPERATURE COMPENSATED ZENER REFERENCE CHIPS CD829A • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • ELECTRICALLY EQUIVALENT TO 1N821 THRU 1N829 • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES
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1N821
1N829
CD821
1N829
CD829A
CD821
D821A
d823a
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PDF
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4617C
Abstract: No abstract text available
Text: CD4614 • 1N4614 THRU 1N4627 AVAILABLE IN JANC thru • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD4627 • ELECTRICALLY EQUIVALENT TO 1N4614 THRU 1N4627 • LOW LEAKAGE CURRENT CHARACTERISTICS • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES
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1N4614
1N4627
1N4627
CD4614
CD4627
CD4614
4617C
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la4603
Abstract: Design with PIN diode limiter alpha Alpha Industries pin diodes 20/LA4606
Text: 03Alpha Limiter Diodes CLA Series Features • Low Loss ■ 4 kW Coarse Limiters ■ 200 Watt Midrange Limiters ■ 10 mW C le an -U p Limiters Description Chip Dimensions Alpha has pioneered the microwave limiter diode. Because all phases of manufacturing, from design
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03Alpha
CLA4603
CLA4606,
la4603
Design with PIN diode limiter alpha
Alpha Industries pin diodes
20/LA4606
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zener diode 47-10
Abstract: 1N4099 1N4135 CD4099 CD4100 CD4101 CD4102 CD4103 CD4104 CD4105
Text: CD4099 • 1N4099 THRU 1N4135 AVAILABLE IN JANC thru • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD4135 • LOW LEAKAGE CURRENT CHARACTERISTICS • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES • ELECTRICALLY EQUIVALENT TO 1N4099 THRU 1N4135
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1N4099
1N4135
1N4135
CD4099
CD4135
CD4099
60MPENSHTED
zener diode 47-10
CD4100
CD4101
CD4102
CD4103
CD4104
CD4105
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PDF
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D5250
Abstract: 5225B 5221B CD5221B
Text: CD5221B ZENER DIODE CHIPS ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE thru CD5272B ELECTRICALLY EQUIVALENT TO 1N5221B THRU 1N5272B GENERAL PURPOSE 500 mW CHIPS COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES ELECTRICAL CHARACTERISTICS @ 25 C, unless otherwise specified
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1N5221B
1N5272B
CD5221B
CD5272B
5221B
5222B
5223B
5224B
5225B
C05226B
D5250
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PDF
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1N409
Abstract: cd 4560 D4126 4106C
Text: • 1N4099 THRU 1N4135 AVAILABLE IN CD4099 JANC thru • ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE CD4135 • LOW LEAKAGE CURRENT CHARACTERISTICS • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES • ELECTRICALLY EQUIVALENT TO 1N4099 THRU 1N4135
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1N4099
1N4135
CD4099
CD4135
1N4135
1N409
cd 4560
D4126
4106C
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PDF
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Untitled
Abstract: No abstract text available
Text: • 1N52383 THRU 1N5314 AVAILABLE IN JANHC AND JANKC CD5283 thru • CURRENT REGULATOR CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • ELECTRICALLY EQUIVALENT TO 1N5283THRU 1N5314 CD5314 • CONSTANT CURRENT OVER WIDE VOLTAGE RANGE • HIGH SOURCE IMPEDANCE
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1N52383
1N5314
CD5283
CD5314
1N5283THRU
1N5314
CD5291
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PDF
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PUT 2N6027
Abstract: PUT 2N6027/2N6028 equivalent transistor of 2n6027 2N6027-2N6028 N6028 UNITRODE U-66 PUT 2N6028 unijunction application note 2N6027 PUT specifications PUT Oscillator 2n6027
Text: PUTs 2N6027-2N6028 Planar, TO-92, Plastic FEATURES DESCR IPTIO N • • • • • • The Unitrode Programmable Unijunction Transistor is today’s preferred device for low cost tim ing circuits, oscillators, sensing circu its and a wide range of other applications
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2N6027-2N6028
150nA
PUT 2N6027
PUT 2N6027/2N6028
equivalent transistor of 2n6027
2N6027-2N6028
N6028
UNITRODE U-66
PUT 2N6028
unijunction application note
2N6027 PUT specifications
PUT Oscillator 2n6027
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Untitled
Abstract: No abstract text available
Text: PIN RADIATION DETECTORS Features • High Photocurrent Sensitivity • High Reliability Construction • Fast Rise Time • Wide Dynamic Range • Hardness to Neutron Bombardment • Low Operating Voltage Description Silicon PIN devices are effective detectors
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UM9441
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TS1902
Abstract: TS1222
Text: CPCIare OptoMOS TS Series GORPORATIO N OptoMOS® “T S ” Series Multifunction Solid State Telecom Switches DESCRIPTION CP Clare’s “TS” series telecom switches provide optimal function density for tip/ring interface circuits. The “TS” series incorporates an optically isolated
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IAA110P
Abstract: No abstract text available
Text: CPOare IAA110P/IBB110P/IAB110P C O R P O R A T I O N OptoMOS IAA110P/IBB110P/IAB110P Multifunction Solid State Integrated Switches DESCRIPTION CP Clare’s OptoMOS® family of multifunction solid state integrated switches consolidate the functions of two solid state relays and bi-directional
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IAA110P/IBB110P/IAB110P
IAA110P/IBB110P/IAB110P
IAA110P)
IBB110P)
IAB110P)
IAA110P,
IBB110P
IAB110P
100mA
IAA110P
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2N6546
Abstract: 2N6547 180I 20C1 2N5875 2N5877
Text: POWER TRANSISTORS 2N6546 2N6547 15A, 850V, Fast Switching, Silicon NPN Mesa DESCRIPTION These high voltage glass passivated power tra n s is to rs co m bin e fa s t s w itc h in g , low s a tu ra tio n voltage and rugged Es/b ca p a b ility . They are designed fo r use in o ff-lin e power
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N6546
2N6547
2N6546
500kHz
1N5820
1N4937
2N6547
180I
20C1
2N5875
2N5877
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ty 617 equivalent
Abstract: B0140 MT619 FMMT619
Text: SuperSOT SOT23 NPN SILICON POWER SWITCHING TRANSISTORS FMMT617 FMMT618 FMMT619 FMMT624 FMMT625 ISSU E 3 - NOVEMBER 1995_ FEATURES * 625m W POWER DISSIPATION * * * * * lc CONT 3A 12A Peak Pulse Current Excellent HFE Characteristics Up To 12A (pulsed)
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FMMT617
FMMT618
FMMT619
FMMT624
FMMT625
50mSl
FMMT625
ty 617 equivalent
B0140
MT619
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PDF
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1032
Abstract: No abstract text available
Text: BUCHANAN Catalog 1308389 Terminal Blocks Revised 3-01 600 S E R IE S , 300V M ED IU M D U TY, 0.375" PITCH tit 1 I t 5 t w £ i i _ '_ !_ • ■ _ ■ CHARACTERISTICS T yp e of B lock Direct Mount Flat Base Painted, Nylon Unpainted, Nylon
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611-BU
618-BU
614-BU
615-BU
P0621
P0628
P0624
P0625
630-BU
1032
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PDF
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nas 1031
Abstract: AM-500GC AM-500MC AM-500MM IVO GmbH CA408
Text: l-y i [d Va ^ n^ fL | *>J Ultra-Fast Microelectronic Operational Amplifiers A M -500 Series FEATURES • • • • • • 200 nsec. Settling to .01% 1000 V//jsec. Slew Rate 100 M H z min. G ain-B an dw idth 106 O pe n Loop Gain 1/j V / ° C Drift *50 mA O utput Current
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AM-500
000V//jsec.
02048/TEL.
339-9341/TWX
710-346-1953/TLX
nas 1031
AM-500GC
AM-500MC
AM-500MM
IVO GmbH
CA408
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PDF
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cp clare relay mercury wetted
Abstract: design of 4-20mA transmitter for bridge type transducer using op-amp lm358 4-20mA cp clare reed relay 0-10v to 4-20ma clare reed relays SWPS relay, reed 4 to 20ma current source circuit diagram lm358 clare relay mercury
Text: 2 70% '7 ° l 7 '7 o o < p f par June 1994 Lo t o s No. 15001 CP Clare Application Note LO C H O Linear Optocoupler Isolation amplifier circuit designs for Telecommunications, Industrial, Medical and Instrum entation Systems. The application note covers the LO C H O electrical
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SSP15"
cp clare relay mercury wetted
design of 4-20mA transmitter for bridge type transducer using op-amp
lm358 4-20mA
cp clare reed relay
0-10v to 4-20ma
clare reed relays
SWPS
relay, reed
4 to 20ma current source circuit diagram lm358
clare relay mercury
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PDF
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triacs bt 804 600v
Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Text: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa tion for maintaining an unusually high level of quality, perfor
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Comp27-1296
triacs bt 804 600v
UR720
1N4465
AO110
diode 1N539
2N3750
Unitrode discrete databook
2N6138
CM104
unitrode 679 BRIDGE rectifier
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Untitled
Abstract: No abstract text available
Text: ste 2 6 m ► LC2M0S High-Speed, Quad SPST Switch ANALOG DEVICES FEATURES 50ns max Switching Time Over Full Temperature Range Low Rqn 3011 typ Single Supply Specifications for + 10.8V to + 16.5V Operation Extended Plastic Temperature Range ( —40°C to +85°C)
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ADG201HS
HI-201
DG271
DG271BK
HI1-0201HS-4
PMADG201HSAQ
ADG201
PMADG201HSBQ
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