AVS302N
Abstract: ASS4L4SN-407
Text: ø25mm TWS Series Switches & Pilot Lights 14/03/18 ø25 TWS Series (Selection Guide) Function Category Flush Extended Pushbutton Extended with Half Shroud Momentary/Maintained ABS1 AOS1 9 ABS2 AOS2 9 ABGS2 AOGS2 9 ABFS2 AOFS2 C-9 Mushroom Pushlock Turn Reset
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EP1523-0
AVS302N
ASS4L4SN-407
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tws315
Abstract: RWS - 315 TWS-315 transmitter 433.92 MHz 5v ask ht12e ask module HT 12E APPLICATION transmitter 433.92 MHz 5v tws bs3 433 RWS 315 TWS-BS3
Text: WEN SHING DATA SHEET Transmitter Module : TWS-BS3 433.92 MHz *Frequency Range: 433.92 MHz *Modulate Mode: ASK *Circuit Shape: SAW *Date Rate: 8kbps *Supply Voltage: 3~ 12 V *Power Supply and All Input / Output Pins: -0.3 to +12.0 V *Non-Operating Case Temperature: -20 to +85
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92MHz
200KHz)
HT-12D
tws315
RWS - 315
TWS-315
transmitter 433.92 MHz 5v ask
ht12e ask module
HT 12E APPLICATION
transmitter 433.92 MHz 5v
tws bs3 433
RWS 315
TWS-BS3
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EM532323Q-6
Abstract: DQ3225
Text: EtronTech EM532323 64K x 32 Pipelined Burst SRAM • • • • • • • • • • • • NC DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23 DQ24 FT# VDD NC VSS DQ25 DQ26 VDDQ VSSQ DQ27 DQ28 DQ29 DQ30 VSSQ VDDQ DQ31 DQ32 NC 1 2 3 4 5 6 7 8 9
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EM532323
EM532323Q-6
DQ3225
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tws 418
Abstract: 8051 thermostat LM78A LSI53C040 AUTOMATIC STREET LIGHT CONTROLLER using 8051 8051 microcontroller based temperature control fan Accuracy Digital Thermometer opcdo moving message display using Led and 8051 microcontroller INTEL 80C32
Text: PROGRAMMING GUIDE LSI53C040 Enclosure Services Processor Version 1.1 December 2000 S14021.A This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.
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LSI53C040
S14021
DB15-000100-01,
LSI53C040
D-33181
D-85540
tws 418
8051 thermostat
LM78A
AUTOMATIC STREET LIGHT CONTROLLER using 8051
8051 microcontroller based temperature control fan
Accuracy Digital Thermometer
opcdo
moving message display using Led and 8051 microcontroller
INTEL 80C32
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F9901
Abstract: LQFP48 MB40C328 MB40C328PFV
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS04-28216-1E ASSP For Video Applications CMOS 8-bit 100 MSPS A/D Converter MB40C328 • DESCRIPTION MB40C328 is a high-speed A/D converter using a fast CMOS technology. ■ FEATURES • • • •
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DS04-28216-1E
MB40C328
MB40C328
F9901
LQFP48
MB40C328PFV
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F9901
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-28216-1E ASSP For Video Applications CMOS 8-bit 100 MSPS A/D Converter MB40C328 • DESCRIPTION MB40C328 is a high-speed A/D converter using a fast CMOS technology. ■ FEATURES • • • • • • • • • Resolution
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DS04-28216-1E
MB40C328
MB40C328
D-63303
F9901
F9901
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-28215-1E ASSP For Video Applications CMOS 8-bit 140 MSPS A/D Converter MB40C318 • DESCRIPTION MB40C318 is a high-speed A/D converter using a fast CMOS technology. ■ FEATURES • • • • Resolution Linearity error
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DS04-28215-1E
MB40C318
MB40C318
D-63303
F9901
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F9901
Abstract: LQFP48 MB40C318 MB40C318PFV
Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS04-28215-1E ASSP For Video Applications CMOS 8-bit 140 MSPS A/D Converter MB40C318 • DESCRIPTION MB40C318 is a high-speed A/D converter using a fast CMOS technology. ■ FEATURES • • • •
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DS04-28215-1E
MB40C318
MB40C318
F9901
LQFP48
MB40C318PFV
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64KX64
Abstract: p8000 UT6164C64AQ UT6164C64A
Text: UTRON UT6164C64A 64K X 64 SYNCHRONOUS PIPELINED BURST CMOS SRAM Rev 1.1 FEATURES Single 3.3V -5% and +10% power supply Support 2.5V I/O Fast clock access time:
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UT6164C64A
/100MHz,
/75MHz,
/66Mhz
128-pin
UT6164C64A
304-bit
UT6164C64AQ-5
UT6164C64AT-5
64KX64
p8000
UT6164C64AQ
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EM531323-5
Abstract: TWS - 315
Text: EtronTech Em531323 32K x 32 Pipelined Burst SRAM • • • • • • • • • • • • NC DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23 DQ24 FT# VDD NC VSS DQ25 DQ26 VDDQ VSSQ DQ27 DQ28 DQ29 DQ30 VSSQ VDDQ DQ31 DQ32 NC 1 2 3 4 5 6 7 8 9
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Em531323
EM531323-5
TWS - 315
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EM542323TQ-11
Abstract: TQFP 14X20
Text: EtronTech EM542323 2.5V/3.3V I/O 64K x 32 Pipelined Burst SRAM Preliminary 9/97 • • • • • • • NC DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23 DQ24 FT # VDD NC VSS DQ25 DQ26 VDDQ VSSQ DQ27 DQ28 DQ29 DQ30 VSSQ VDDQ DQ31 DQ32 NC 1 2
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EM542323
EM542323TQ-11
TQFP 14X20
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Untitled
Abstract: No abstract text available
Text: EtronTech EM541323 2.5V/3.3V I/O 32K x 32 Pipelined Burst SRAM Preliminary 01/98 • • • • • • • A6 A7 CE1# CE2 BW4# BW3# BW2# BW1# CE3# VDD VSS CLK GW# BWE# OE# ADSC# ADSP# ADV# A8 A9 NC DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23
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EM541323
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tda 2015
Abstract: TWS 434 tda AMP 12V Block Diagram tda 8842 TDA 1008 A tda 136 FIFO CAM based on leakage current techniques mux configuration bpw 50 tda 2084
Text: Compiled Memory 5 Contents Overview . 5-1 Compiled Memory Naming Convention. 5-1
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STDH150
tda 2015
TWS 434
tda AMP 12V
Block Diagram tda 8842
TDA 1008 A
tda 136
FIFO CAM
based on leakage current techniques mux configuration
bpw 50
tda 2084
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MB85R256s
Abstract: FPT-28P-M03 FPT-28P-M17 MB85R256 MB85R256PF MB85R256PFTN FUJITSU FRAM TCA 150
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13101-3E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256 • DESCRIPTIONS The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
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DS05-13101-3E
MB85R256
MB85R256
F0404
MB85R256s
FPT-28P-M03
FPT-28P-M17
MB85R256PF
MB85R256PFTN
FUJITSU FRAM
TCA 150
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Untitled
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13101-4E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256 • DESCRIPTIONS The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
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DS05-13101-4E
MB85R256
MB85R256
F0504
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tda 9594
Abstract: tda 85630 tda 2622 TDA 452 56-1556 tda 8375 pin voltage tda 2165 tda 4603 TDA 1028 TDA 8631
Text: Compiled Memory 5 Contents Overview . 5-1 Compiled Memory Naming Convention. 5-1
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STD130
tda 9594
tda 85630
tda 2622
TDA 452
56-1556
tda 8375 pin voltage
tda 2165
tda 4603
TDA 1028
TDA 8631
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th 2167.1
Abstract: tda 7244 TDA 3553 TDA 2010 Circuit tda 266 tda 8895 tda 8956 tda 2222 BPW 34 datasheet TDA 2010
Text: Compiled Memory 5 Contents Overview . 5-1 Compiled Memory Naming Convention. 5-1
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STDL130
th 2167.1
tda 7244
TDA 3553
TDA 2010 Circuit
tda 266
tda 8895
tda 8956
tda 2222
BPW 34 datasheet
TDA 2010
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TDA 7927
Abstract: tda 9346 TDA 7877 55320 tda 8207 TDA 8517 TDA 5210 A3 TDA 8633 tda 8908 TDA 3807
Text: SPSRAM_LP Low-Power Single-Port Synchronous Static RAM Features Logic Symbol spsram_lp_<w>x<b>m<y> CK CSN WEN DOUT [b–1:0] OEN A [m-1:0] DI [b–1:0] NOTES: 1. Words w is the number of words. 2. Bpw(b) is the number of bits per word. 3. Ymux(y) is one of the column mux types.
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STD130
TDA 7927
tda 9346
TDA 7877
55320
tda 8207
TDA 8517
TDA 5210 A3
TDA 8633
tda 8908
TDA 3807
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tda 85630
Abstract: tda 7625 TDA 1007 tda 1282 tda 1700 bpw 104 tda 810 tda 1512 tda 266 TDA 452
Text: Compiled Memory 5 Contents Overview . 5-1 Compiled Memory Naming Convention. 5-1
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STD131
tda 85630
tda 7625
TDA 1007
tda 1282
tda 1700
bpw 104
tda 810
tda 1512
tda 266
TDA 452
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MB85R256HPF
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13106-2E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
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DS05-13106-2E
MB85R256H
MB85R256H
F0702
MB85R256HPF
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000read
Abstract: MB85R256HPF FPT-28P-M03 FPT-28P-M17 MB85R256H MB85R256HPFCN MB85R256HPFTN TCA 120
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13106-1E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
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DS05-13106-1E
MB85R256H
MB85R256H
F0606
000read
MB85R256HPF
FPT-28P-M03
FPT-28P-M17
MB85R256HPFCN
MB85R256HPFTN
TCA 120
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MB85R256F
Abstract: No abstract text available
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-1v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the
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DS501-00011-1v0-E
MB85R256F
MB85R256F
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MB85R256HPF-G-BNDAE1
Abstract: FPT-28P-M03 FPT-28P-M17 MB85R256H MB85R256HPFCN-G-BNDAE1 MB85R256HPFGBN
Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13106-4Ea Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
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DS05-13106-4Ea
MB85R256H
MB85R256H
MB85R256HPF-G-BNDAE1
FPT-28P-M03
FPT-28P-M17
MB85R256HPFCN-G-BNDAE1
MB85R256HPFGBN
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MB85R256HPF-G-BNDAE1
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13106-5E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile
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DS05-13106-5E
MB85R256H
MB85R256H
MB85R256HPF-G-BNDAE1
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