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    TWS - 315 Search Results

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    TWS - 315 Price and Stock

    Samtec Inc TW-04-09-F-D-315-SM-A

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    Samtec Inc TW-06-09-F-D-315-SM-A

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    Samtec Inc TW-05-03-G-D-315-SM

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    Samtec Inc TW-02-06-L-D-315-SM

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    Samtec Inc TW-03-03-F-D-315-SM-A

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    TWS - 315 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AVS302N

    Abstract: ASS4L4SN-407
    Text: ø25mm TWS Series Switches & Pilot Lights 14/03/18 ø25 TWS Series (Selection Guide) Function Category Flush Extended Pushbutton Extended with Half Shroud Momentary/Maintained ABS1 AOS1 9 ABS2 AOS2 9 ABGS2 AOGS2 9 ABFS2 AOFS2 C-9 Mushroom Pushlock Turn Reset


    Original     		PDF EP1523-0 AVS302N ASS4L4SN-407

    tws315

    Abstract: RWS - 315 TWS-315 transmitter 433.92 MHz 5v ask ht12e ask module HT 12E APPLICATION transmitter 433.92 MHz 5v tws bs3 433 RWS 315 TWS-BS3
    Text: WEN SHING DATA SHEET Transmitter Module : TWS-BS3 433.92 MHz *Frequency Range: 433.92 MHz *Modulate Mode: ASK *Circuit Shape: SAW *Date Rate: 8kbps *Supply Voltage: 3~ 12 V *Power Supply and All Input / Output Pins: -0.3 to +12.0 V *Non-Operating Case Temperature: -20 to +85


    Original     		PDF 92MHz 200KHz) HT-12D tws315 RWS - 315 TWS-315 transmitter 433.92 MHz 5v ask ht12e ask module HT 12E APPLICATION transmitter 433.92 MHz 5v tws bs3 433 RWS 315 TWS-BS3

    EM532323Q-6

    Abstract: DQ3225
    Text: EtronTech EM532323 64K x 32 Pipelined Burst SRAM • • • • • • • • • • • • NC DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23 DQ24 FT# VDD NC VSS DQ25 DQ26 VDDQ VSSQ DQ27 DQ28 DQ29 DQ30 VSSQ VDDQ DQ31 DQ32 NC 1 2 3 4 5 6 7 8 9


    Original     		PDF EM532323 EM532323Q-6 DQ3225

    tws 418

    Abstract: 8051 thermostat LM78A LSI53C040 AUTOMATIC STREET LIGHT CONTROLLER using 8051 8051 microcontroller based temperature control fan Accuracy Digital Thermometer opcdo moving message display using Led and 8051 microcontroller INTEL 80C32
    Text: PROGRAMMING GUIDE LSI53C040 Enclosure Services Processor Version 1.1 December 2000 S14021.A This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.


    Original     		PDF LSI53C040 S14021 DB15-000100-01, LSI53C040 D-33181 D-85540 tws 418 8051 thermostat LM78A AUTOMATIC STREET LIGHT CONTROLLER using 8051 8051 microcontroller based temperature control fan Accuracy Digital Thermometer opcdo moving message display using Led and 8051 microcontroller INTEL 80C32

    F9901

    Abstract: LQFP48 MB40C328 MB40C328PFV
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS04-28216-1E ASSP For Video Applications CMOS 8-bit 100 MSPS A/D Converter MB40C328 • DESCRIPTION MB40C328 is a high-speed A/D converter using a fast CMOS technology. ■ FEATURES • • • •


    Original     		PDF DS04-28216-1E MB40C328 MB40C328 F9901 LQFP48 MB40C328PFV

    F9901

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-28216-1E ASSP For Video Applications CMOS 8-bit 100 MSPS A/D Converter MB40C328 • DESCRIPTION MB40C328 is a high-speed A/D converter using a fast CMOS technology. ■ FEATURES • • • • • • • • • Resolution


    Original     		PDF DS04-28216-1E MB40C328 MB40C328 D-63303 F9901 F9901

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-28215-1E ASSP For Video Applications CMOS 8-bit 140 MSPS A/D Converter MB40C318 • DESCRIPTION MB40C318 is a high-speed A/D converter using a fast CMOS technology. ■ FEATURES • • • • Resolution Linearity error


    Original     		PDF DS04-28215-1E MB40C318 MB40C318 D-63303 F9901

    F9901

    Abstract: LQFP48 MB40C318 MB40C318PFV
    Text: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS04-28215-1E ASSP For Video Applications CMOS 8-bit 140 MSPS A/D Converter MB40C318 • DESCRIPTION MB40C318 is a high-speed A/D converter using a fast CMOS technology. ■ FEATURES • • • •


    Original     		PDF DS04-28215-1E MB40C318 MB40C318 F9901 LQFP48 MB40C318PFV

    64KX64

    Abstract: p8000 UT6164C64AQ UT6164C64A
    Text:  UTRON UT6164C64A 64K X 64 SYNCHRONOUS PIPELINED BURST CMOS SRAM Rev 1.1 FEATURES Single 3.3V -5% and +10% power supply Support 2.5V I/O Fast clock access time:


    Original     		PDF UT6164C64A /100MHz, /75MHz, /66Mhz 128-pin UT6164C64A 304-bit UT6164C64AQ-5 UT6164C64AT-5 64KX64 p8000 UT6164C64AQ

    EM531323-5

    Abstract: TWS - 315
    Text: EtronTech Em531323 32K x 32 Pipelined Burst SRAM • • • • • • • • • • • • NC DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23 DQ24 FT# VDD NC VSS DQ25 DQ26 VDDQ VSSQ DQ27 DQ28 DQ29 DQ30 VSSQ VDDQ DQ31 DQ32 NC 1 2 3 4 5 6 7 8 9


    Original     		PDF Em531323 EM531323-5 TWS - 315

    EM542323TQ-11

    Abstract: TQFP 14X20
    Text: EtronTech EM542323 2.5V/3.3V I/O 64K x 32 Pipelined Burst SRAM Preliminary 9/97 • • • • • • • NC DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23 DQ24 FT # VDD NC VSS DQ25 DQ26 VDDQ VSSQ DQ27 DQ28 DQ29 DQ30 VSSQ VDDQ DQ31 DQ32 NC 1 2


    Original     		PDF EM542323 EM542323TQ-11 TQFP 14X20

    Untitled

    Abstract: No abstract text available
    Text: EtronTech EM541323 2.5V/3.3V I/O 32K x 32 Pipelined Burst SRAM Preliminary 01/98 • • • • • • • A6 A7 CE1# CE2 BW4# BW3# BW2# BW1# CE3# VDD VSS CLK GW# BWE# OE# ADSC# ADSP# ADV# A8 A9 NC DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23


    Original     		PDF EM541323

    tda 2015

    Abstract: TWS 434 tda AMP 12V Block Diagram tda 8842 TDA 1008 A tda 136 FIFO CAM based on leakage current techniques mux configuration bpw 50 tda 2084
    Text: Compiled Memory 5 Contents Overview . 5-1 Compiled Memory Naming Convention. 5-1


    Original     		PDF STDH150 tda 2015 TWS 434 tda AMP 12V Block Diagram tda 8842 TDA 1008 A tda 136 FIFO CAM based on leakage current techniques mux configuration bpw 50 tda 2084

    MB85R256s

    Abstract: FPT-28P-M03 FPT-28P-M17 MB85R256 MB85R256PF MB85R256PFTN FUJITSU FRAM TCA 150
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13101-3E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256 • DESCRIPTIONS The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS05-13101-3E MB85R256 MB85R256 F0404 MB85R256s FPT-28P-M03 FPT-28P-M17 MB85R256PF MB85R256PFTN FUJITSU FRAM TCA 150

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13101-4E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256 • DESCRIPTIONS The MB85R256 is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS05-13101-4E MB85R256 MB85R256 F0504

    tda 9594

    Abstract: tda 85630 tda 2622 TDA 452 56-1556 tda 8375 pin voltage tda 2165 tda 4603 TDA 1028 TDA 8631
    Text: Compiled Memory 5 Contents Overview . 5-1 Compiled Memory Naming Convention. 5-1


    Original     		PDF STD130 tda 9594 tda 85630 tda 2622 TDA 452 56-1556 tda 8375 pin voltage tda 2165 tda 4603 TDA 1028 TDA 8631

    th 2167.1

    Abstract: tda 7244 TDA 3553 TDA 2010 Circuit tda 266 tda 8895 tda 8956 tda 2222 BPW 34 datasheet TDA 2010
    Text: Compiled Memory 5 Contents Overview . 5-1 Compiled Memory Naming Convention. 5-1


    Original     		PDF STDL130 th 2167.1 tda 7244 TDA 3553 TDA 2010 Circuit tda 266 tda 8895 tda 8956 tda 2222 BPW 34 datasheet TDA 2010

    TDA 7927

    Abstract: tda 9346 TDA 7877 55320 tda 8207 TDA 8517 TDA 5210 A3 TDA 8633 tda 8908 TDA 3807
    Text: SPSRAM_LP Low-Power Single-Port Synchronous Static RAM Features Logic Symbol spsram_lp_<w>x<b>m<y> CK CSN WEN DOUT [b–1:0] OEN A [m-1:0] DI [b–1:0] NOTES: 1. Words w is the number of words. 2. Bpw(b) is the number of bits per word. 3. Ymux(y) is one of the column mux types.


    Original     		PDF STD130 TDA 7927 tda 9346 TDA 7877 55320 tda 8207 TDA 8517 TDA 5210 A3 TDA 8633 tda 8908 TDA 3807

    tda 85630

    Abstract: tda 7625 TDA 1007 tda 1282 tda 1700 bpw 104 tda 810 tda 1512 tda 266 TDA 452
    Text: Compiled Memory 5 Contents Overview . 5-1 Compiled Memory Naming Convention. 5-1


    Original     		PDF STD131 tda 85630 tda 7625 TDA 1007 tda 1282 tda 1700 bpw 104 tda 810 tda 1512 tda 266 TDA 452

    MB85R256HPF

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13106-2E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS05-13106-2E MB85R256H MB85R256H F0702 MB85R256HPF

    000read

    Abstract: MB85R256HPF FPT-28P-M03 FPT-28P-M17 MB85R256H MB85R256HPFCN MB85R256HPFTN TCA 120
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-13106-1E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS05-13106-1E MB85R256H MB85R256H F0606 000read MB85R256HPF FPT-28P-M03 FPT-28P-M17 MB85R256HPFCN MB85R256HPFTN TCA 120

    MB85R256F

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00011-1v0-E Memory FRAM 256 K 32 K x 8 Bit MB85R256F • DESCRIPTIONS The MB85R256F is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words × 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the


    Original     		PDF DS501-00011-1v0-E MB85R256F MB85R256F

    MB85R256HPF-G-BNDAE1

    Abstract: FPT-28P-M03 FPT-28P-M17 MB85R256H MB85R256HPFCN-G-BNDAE1 MB85R256HPFGBN
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13106-4Ea Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS05-13106-4Ea MB85R256H MB85R256H MB85R256HPF-G-BNDAE1 FPT-28P-M03 FPT-28P-M17 MB85R256HPFCN-G-BNDAE1 MB85R256HPFGBN

    MB85R256HPF-G-BNDAE1

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS DATA SHEET DS05-13106-5E Memory FRAM CMOS 256 K 32 K x 8 Bit MB85R256H • DESCRIPTIONS The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile


    Original     		PDF DS05-13106-5E MB85R256H MB85R256H MB85R256HPF-G-BNDAE1