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    TWO PNP TRANSISTORS SC-70 SOT363 Search Results

    TWO PNP TRANSISTORS SC-70 SOT363 Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    TWO PNP TRANSISTORS SC-70 SOT363 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP LBCX17LT1G LBCX18LT1G NPN LBCX19LT1G LBCX20LT1G FEATURE Pb-Free Package is available. ORDERING INFORMATION Voltage and current are negative Device for PNP transistors Package Shipping LBCX17LT1G SOT-23


    Original     		PDF LBCX17LT1G LBCX18LT1G LBCX19LT1G LBCX20LT1G OT-23 3000/Tape LBCX17LT3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. ƽ Pb-Free Package is available.


    Original     		PDF 323/SCâ LMBT3904WT1G LMBT3906WT1G OT-323/SC-70 3000/Tape LMBT3904WT3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in


    Original     		PDF LMBT3946DW1T1 23/SOTâ LMBT3946DW1T1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor LMUN5111T1G SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network PNP SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


    Original     		PDF LMUN5111T1G 70/SOTâ

    Untitled

    Abstract: No abstract text available
    Text: MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 Dual General Purpose Transistors The MBT3904DW1T1, MBT3906DW1T1, and MBT3946DW1T1 devices are spin–offs of our popular SOT–23/SOT–323 three–leaded devices. They are designed for general purpose amplifier applications


    Original     		PDF MBT3904DW1T1, MBT3906DW1T1, MBT3946DW1T1 23/SOT MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LDTA143EET1 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


    Original     		PDF LDTA143EET1 SC-89

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LMUN2110LT1G PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


    Original     		PDF LMUN2110LT1G OT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTA123EET1 PNP Silicon Surface Mount Transistors With Monolithic Bias Resistor Network 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


    Original     		PDF LDTA123EET1 SC-89

    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


    Original     		PDF ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN/PNP Duals Complimentary These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.


    Original     		PDF 363/SCâ LBC846BPDW1T1G LBC847CPDW1T1G LBC848CPDW1T1G LBC847BPDW1T1G LBC848BPDW1T1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Driver Transistors PNP Silicon LMBTA55LT1G LMBTA56LT1G 3 COLLECTOR Pb-free package is available. The suffix G means Pb-free. 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value LMBTA55 LMBTA56 Collector–Emitter Voltage V


    Original     		PDF LMBTA55LT1G LMBTA56LT1G LMBTA55 LMBTA56 236AB)

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Digital transistors Features 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors see equivalent circuit). 2)The bias resistors consist of thinfilm resistors with complete isolation to allow negative biasing of the


    Original     		PDF LDTB114ELT1G LDTB114ELT1G

    MSB709

    Abstract: SC-75 SOT-353 b1
    Text: MSB709 PNP General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25°C) Symbol Value Unit Collector-Emitter Voltage VCEO -45 V Collector-Base Voltage VCBO -60 V Emitter-Base Voltage VEBO -7.0 V Collector Current - Continuous IC -100


    Original     		PDF MSB709 OT-23 MSB709 18-Sep-06 SC-75 SOT-353 b1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN2111LT1G SERIES 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


    Original     		PDF LMUN2111LT1G OT-23

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LMUN5311DW1T1G Series The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network


    Original     		PDF LMUN5311DW1T1G LMUN5311DW1T1G

    178 15T

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9015TLT1G FEATURE 3 ƽComplementary to L9014. ƽPb-Free package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping SOT– 23 L9015TLT1G 15T 3000/Tape&Reel L9015TLT3G


    Original     		PDF L9015TLT1G L9014. 3000/Tape L9015TLT3G 10000/Tape 178 15T

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors With Monolithic Bias Resistor Network LDTA114EM3T5G Series This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor


    Original     		PDF LDTA114EM3T5G OT-723 OT-723

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors LDTA113ZLT1G FFeatures 1) The built-in bias resistor allows the configuration of an inverter circuit without connecting any external input resistors (see Equivalent circuit). 2) Each bias resistor is a thin-film resistor. Since they are completely insulated, the input can be positively


    Original     		PDF LDTA113ZLT1G OT-23

    Untitled

    Abstract: No abstract text available
    Text: X LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9012XLT1G FEATURE Pb-Free Package is available. 3 ORDERING INFORMATION Device 1 Package Shipping 2 L9012xx X LT1G SOT-23 3000/Tape&Reel L9012XLT3G SOT-23 10000/Tape&Reel SOT-23 TO-236AB


    Original     		PDF L9012XLT1G L9012xx OT-23 3000/Tape L9012XLT3G 10000/Tape O-236AB)

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L8550*LT1G FEATURE Pb-Free Package is available. 3 ORDERING INFORMATION Device Package Shipping L8550*LT1G SOT-23 3000/Tape&Reel L8550*LT3G SOT-23 3000/Tape&Reel 1 2 SOT– 23 MAXIMUM RATINGS


    Original     		PDF L8550 OT-23 3000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Digital transistors built-in resistors LDTA123JET1 FEATURES: 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with


    Original     		PDF LDTA123JET1 SC-89

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon L9015XLT1G FEATURE 3 ƽComplementary to L9014. ƽPb-Free package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping L9015QLT1G 15Q 3000/Tape&Reel L9015QLT3G 15Q


    Original     		PDF L9015XLT1G L9014. L9015QLT1G 3000/Tape L9015QLT3G 10000/Tape L9015RLT1G L9015RLT3G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G FEATURE ƽCollector current capability IC = -500 mA. ƽCollector-emitter voltage VCEO max = -45 V. ƽGeneral purpose switching and amplification.


    Original     		PDF LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC807 3000/Tape LBC807-16LT3G 10000/Tape

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. High Voltage Transistors LBSS63LT1G PNP Silicon 3 COLLECTOR 3 1 1 BASE 2 2 Featrues CASE 318–08, STYLE 6 SOT– 23 TO–236AB EMITTER Pb-Free Package is Available. MAXIMUM RATINGS Rating Symbol Value Unit Collector– Emitter Voltage


    Original     		PDF LBSS63LT1G 236AB)