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    TWIN CMOS Search Results

    TWIN CMOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    MG80C186XL-20/R Rochester Electronics LLC Microprocessor, CMOS Visit Rochester Electronics LLC Buy
    MD87C51-16/B Rochester Electronics LLC Microcontroller, CMOS Visit Rochester Electronics LLC Buy
    A80C286-12 Rochester Electronics LLC Microprocessor, CMOS Visit Rochester Electronics LLC Buy

    TWIN CMOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2P4M

    Abstract: cmos transistor 0.35 um transistor 2p4m 0.35Um 2P4M of 2p4m
    Text: 0.35um 2P4M High Voltage 18V / 18V updated in 2005.03.24 Features ƒ Voltage Logic,High Voltage ƒ Starting material 3.3V,18V/18V P-type (100), Non-Epi ƒ Well Structure Logic : Retrograded Twin well (Nwell, Pwell) HV : Diffused Twin well (HNwell, HPwell)


    Original     		PDF 8V/18V 100x100um2 2P4M cmos transistor 0.35 um transistor 2p4m 0.35Um 2P4M of 2p4m

    all transistor

    Abstract: 2P4M transistor 2p4m nmos transistor 0.35 um 73aa cmos transistor 0.35 um of 2p4m
    Text: 0.30um 2P4M High Voltage 13.5V /13.5V updated in 2005.04.05 Features ƒ Vdd Logic, High Voltage 3.3V, 13.5V/ 13.5V ƒ Substrate P-type (100), Non-Epi ƒ Well Logic : Retrograded Twin Well (Nwell, Pwell) HV : Diffused Twin Well (Hnwell, Hpwell) ƒ Isolation


    Original     		PDF

    carrier detect phase shift

    Abstract: No abstract text available
    Text: ACE9030 Radio Interface and Twin Synthesiser Preliminary Information DS4288 ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor and control levels such as transmit power in the telephone,


    Original     		PDF ACE9030 DS4288 ACE9030 carrier detect phase shift

    ACE9020

    Abstract: ACE9030 ACE9040 ACE9050 AMP01
    Text: ACE9030 Radio Interface and Twin Synthesiser Preliminary Information DS4288 ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor and control levels such as transmit power in the telephone,


    Original     		PDF ACE9030 DS4288 ACE9030 ACE9020 ACE9040 ACE9050 AMP01

    ampo1

    Abstract: AN94, Using the NJ88C33 PLL Synthesiser 616181-8
    Text: ACE9030 Radio Interface and Twin Synthesiser Data Sheet May 2005 ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor and control levels such as transmit power in the telephone,


    Original     		PDF ACE9030 ACE9030 ampo1 AN94, Using the NJ88C33 PLL Synthesiser 616181-8

    carrier detect phase shift

    Abstract: ACE9020 ACE9030 ACE9040 ACE9050 AMP01
    Text: ACE9030 Radio Interface and Twin Synthesiser Preliminary Information DS4288 ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor and control levels such as transmit power in the telephone,


    Original     		PDF ACE9030 DS4288 ACE9030 carrier detect phase shift ACE9020 ACE9040 ACE9050 AMP01

    Constant fraction discriminator

    Abstract: squarewave generator carrier detect phase shift old fm radio diagram transistor tank fill ACE9020 ACE9030 ACE9040 ACE9050 AMP01
    Text: ACE9030 Radio Interface and Twin Synthesiser Preliminary Information DS4288 ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor and control levels such as transmit power in the telephone,


    Original     		PDF ACE9030 DS4288 ACE9030 Constant fraction discriminator squarewave generator carrier detect phase shift old fm radio diagram transistor tank fill ACE9020 ACE9040 ACE9050 AMP01

    ACE9020

    Abstract: ACE9030 ACE9040 ACE9050 AMP01 ampo1
    Text: ACE9030 Radio Interface and Twin Synthesiser Preliminary Information DS4288 ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor and control levels such as transmit power in the telephone,


    Original     		PDF ACE9030 DS4288 ACE9030 ACE9020 ACE9040 ACE9050 AMP01 ampo1

    TLE7259G

    Abstract: TLE7269G TLE7259-2GE FRA4 J2602 TLE7259-2GU
    Text: Data Sheet, Rev. 1.2, Nov. 2007 TLE7269G Twin LIN Transceiver Automotive Power TLE7269G Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF TLE7269G TLE7259G TLE7269G TLE7259-2GE FRA4 J2602 TLE7259-2GU

    SG 1050

    Abstract: C06 60V polysilicon fuse
    Text: 0.6µ µm 60V CMOS Process ID: SG [C06] Applications Main Process Flow • Automotive, including 42V standard. • P Substrate • HV Well Formation • LOCOS Field Oxidation • Twin Retrograde Wells


    Original     		PDF

    bsim3v3

    Abstract: C08p
    Text: 0.7µ µm 13.5V CMOS Process ID: SE/SF [C08p] Applications Main Process Flow • High voltage interface to mixed signal • P Substrate circuits, e.g: LCD display drivers, Power • Twin Wells


    Original     		PDF

    ON SEMICONDUCTOR 613

    Abstract: metal oxide in capacitor
    Text: 0.7µ µm 5V CMOS Process ID: SA/SB [C08n] Applications Main Process Flow • Mixed signal embedded systems / • N Substrate systems on a chip SOC . • Twin Wells • High precision mixed signal circuits.


    Original     		PDF

    bsim3

    Abstract: mos transistor ON SEMICONDUCTOR 613
    Text: 0.6µ µm 5V CMOS Process ID: SC/SD [C06] Applications Main Process Flow • Mixed signal embedded systems / • P Substrate systems on a chip SOC . • Twin Wells • High precision mixed signal circuits.


    Original     		PDF

    TC93A02AFUG

    Abstract: CD Pick-Up head CD Laser pickup HFM dvd optical pickup toshiba TC93A02 Laser Diode for dvd 400 mW DVD laser head laser diode toshiba dvd laser pickup DVD pickup circuit diagram
    Text: TOSHIBA TC93A02AFUG TOSHIBA CMOS LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TC93A02AFUG High-Frequency Modulation IC for Laser Diode TWIN VLD The TC93A02AFUG is a high frequency modulation IC for laser diode. This product is designed for PUH(Pick-Up Head) of


    Original     		PDF TC93A02AFUG TC93A02AFUG 250MHz 450MHz 10mAp-p 80mAp-p CD Pick-Up head CD Laser pickup HFM dvd optical pickup toshiba TC93A02 Laser Diode for dvd 400 mW DVD laser head laser diode toshiba dvd laser pickup DVD pickup circuit diagram

    2P4M P 82

    Abstract: of 2p4m transistor 2p4m 2P4M cmos transistor 0.35 um nmos transistor 0.35 um 0.35 um CMOS gate area 0.35um cmos transistor parameters
    Text: 0.35um 2P4M Mixed Signal 3.3V / 5V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um


    Original     		PDF

    TRANSISTOR 545

    Abstract: No abstract text available
    Text: 0.35um 1P4M Logic 3.3V /5V updated in 2005.03.24 Features ƒ Vdd Core/IO 3.3V / 5V ƒ Starting Material P(100), Non-Epi ƒ Well Retrograde Twin Well Structure ƒ Isolation Conventional LOCOS ƒ Transistor Dual Gate CMOS Gate Length (Ldrawn) 0.35um Channel


    Original     		PDF

    HY6264A

    Abstract: HY6264A-I HY6264ALP-70 HY6264ALP HY6264AJ HY6264ALLP HY6264AP Hyundai Semiconductor HY6264A HY6264AL
    Text: HY6264A- I Series 8Kx8bit CMOS SRAM FEATURES DESCRIPTION The HY6264A/ HY6264A-I is a high-speed, low power and 8,192x8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit


    Original     		PDF HY6264A- HY6264A/ HY6264A-I 192x8-bits HY6264A/HY6264A-I 28pin 330mil HY6264A HY6264ALP-70 HY6264ALP HY6264AJ HY6264ALLP HY6264AP Hyundai Semiconductor HY6264A HY6264AL

    Untitled

    Abstract: No abstract text available
    Text: Si GEC PLESSEY _PRELIMINARY INFORMATION S E M I C O N D U C T O R S ACE9030 RADIO INTERFACE AND TWIN SYNTHESISER ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor


    OCR Scan     		PDF ACE9030 ACE9030 37bflS2H 002fcilki7

    Untitled

    Abstract: No abstract text available
    Text: MITEL ACE9030 Radio Interface and Twin Synthesiser SE M IC O N D U C T O R Supersedes February 1997 edition, DS4288 - 1.4 DS4288 - 2.0 ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor


    OCR Scan     		PDF ACE9030 DS4288 ACE9030

    Untitled

    Abstract: No abstract text available
    Text: ACE9030 M IT E L Radio Interface and Twin Synthesiser SE M IC O N D U C T O R Supersedes February 1997 edition, DS4288 - 1.4 DS4288 - 2.0 ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor


    OCR Scan     		PDF ACE9030 DS4288 ACE9030 ACE9040 64-LEAD

    siemens opto sensor

    Abstract: No abstract text available
    Text: 96D SIEMENS CAPITAL/ OPTO 03756 D 7* V / * ^ 7 H DI flE3b3Sb DDDBVSb T LHi1158 Pyroelectric-Twin-Detector The twin detector is the sensor component designed for alarm devices with increased req uire me nts as to re Iiabi I ity a nd safety ag ai nst false alarm. Located in a standard TO-5 hou­


    OCR Scan     		PDF LHi1158 siemens opto sensor

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS AKTIENGE SEL LSCHAF 4?E D A235bD5 DOHVflT? 2 I S I Ef i T -m -k '7 LHi 1158 LHi 1158 Pyroelectric-Twin-Detector The twin detector is the sensor component designed for alarm devices with increased requirements as to reliability and safety against false alarm. Located in a standard TO -5 hou­


    OCR Scan     		PDF A235bD5

    BY122

    Abstract: T3D 37 BB522
    Text: a i GEC PLESSEY f e b r u a r y i 99? S E M I C O N D U C T O R S OS4280- 1.4 ACE9030 RADIO INTERFACE AND TWIN SYNTHESISER ACE9030 is a combined radio interface circuit and twin synthesiser, intended for use in a cellular telephone. The radio interface section contains circuits to monitor


    OCR Scan     		PDF OS4280- ACE9030 ACE9030 37bfi522 64-LEAD 37bflS22 BY122 T3D 37 BB522

    32KxB

    Abstract: No abstract text available
    Text: '•HYUNDAI HY62255BSeries 32KxB-bit CMOS SHAM PRELIMINARY DESCRIPTION The HYB2256B is a high-speed, law power and 32.7BS x B-bils CMOS static RAM fabricated using Hyundai's high performance twin lub CMOS process technology. This high reliability process coupled with innovative circuit


    OCR Scan     		PDF 62255BSeries 32KxB-bit HYB2256B HY52256B HY62256B CD4-11-MAY94 HY52256BP HYB2Z56BLP HY5ZZ56BLLP 32KxB