Untitled
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 640 600 DSEI 1x 31 IFAVM = 30 A VRRM = 600 V trr = 35 ns miniBLOC, SOT-227 B Type DSEI 1x 31-06C DSEI 1x 31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 85°C; rectangular, d = 0.5
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OT-227
31-06C
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IXYS MEO 450-12DA
Abstract: No abstract text available
Text: MEO 450-12 DA Fast Recovery Epitaxial Diode FRED Module VRRM = 1200 V IFAVM = 453 A trr = 450 ns Preliminary data 3 VRRM V V 1200 1200 1 Type MEO 450-12DA Symbol Test Conditions IFRMS IFAVM ÿÿ① IFRM TC = 75°C TC = 75°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM
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450-12DA
IXYS MEO 450-12DA
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E72873
Abstract: 30-10B
Text: DSEI 2x 30 DSEI 2x 31 Fast Recovery Epitaxial Diode FRED VRRM V V 1000 1000 miniBLOC, SOT-227 B E72873 Type DSEI 2x 30-10B DSEI 2x 31-10B DSEI 2x30 DSEI 2x31 Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5
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OT-227
E72873
30-10B
31-10B
E72873
30-10B
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IXYS 12-10A
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED DSEI 12 VRSM A V VRRM Type C IFAVM = 12 A VRRM = 1000 V trr = 50 ns TO-220 AC C V A 1000 1000 DSEI 12-10A C A = Anode, C = Cathode Test Conditions IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM
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O-220
2-10A
IXYS 12-10A
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MCC 90 14io8
Abstract: ixys MCC 21 THYRISTOR MODULE IXYS MCC 310 ixys MCC 90
Text: MCC 21 Thyristor Modules VRRM VDSM VDRM V V 900 1300 1500 1700 800 1200 1400 1600 3 Type 5 2 TO-240 AA 1 3 6 7 4 5 MCC 21-08io8 B MCC 21-12io8 B MCC 21-14io8 B MCC 21-16io8 B Conditions ITRMS ITAVM TVJ = TVJM TC = 85°C; 180° sine ITSM TVJ = 45°C; VR = 0
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O-240
21-08io8
21-12io8
21-14io8
21-16io8
MCC 90 14io8
ixys MCC 21
THYRISTOR MODULE IXYS MCC 310
ixys MCC 90
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72-16N1
Abstract: 72-08N1B MDA 800 72 diode 72-08N1
Text: MDD 72 MDA 72 Diode Modules 3 VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Type 2 MDD MDD 72-08N1 B MDD 72-12N1 B MDD 72-14N1 B MDD 72-16N1 B MDD 72-18N1 B MDA 72-08N1 B -MDA 72-14N1 B MDA 72-16N1 B - 1 2 MDA Test Conditions TVJ = TVJM TC = 92°C; 180° sine
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72-08N1
72-12N1
72-14N1
72-16N1
72-18N1
72-08N1B
MDA 800
72 diode
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6110B
Abstract: IXYS DSEI 2X E72873
Text: DSEI 2x 61 Fast Recovery Epitaxial Diode FRED VRRM V V 1000 1000 miniBLOC, SOT-227 B E72873 Type DSEI 2x 61-10B Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ÿÿ① IFRM TVJ = TVJM TC = 50°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM
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OT-227
E72873
61-10B
6110B
IXYS DSEI 2X
E72873
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mee transient
Abstract: 95-06DA
Text: MEA 95-06 DA MEK 95-06 DA MEE 95-06 DA Fast Recovery Epitaxial Diode FRED Module VRSM VRRM V V 600 600 2 MEA95-06 DA 2 MEK 95-06 DA 3 1 2 Test Conditions IFRMS IFAVÿÿ① IFRM Tcase = 75°C Tcase = 75°C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM
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MEA95-06
mee transient
95-06DA
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ixys MDD 172 12
Abstract: motor IG 2200 19 IXYs MCO ixys mco 255 MCC132 MCC161 MCC162 MCC170 MCC72 MCC16
Text: MCO 600 ITRMS = 928 A ITAV = 600 A VRRM = 2000-2200 V High Power Single Thyristor Module Preliminary data VRRM VDRM V V 2100 2300 2000 2200 3 Type 5 4 3 2 2 Test Conditions ITRMS ITAV TVJ = TVJM TC = 85°C; 180° sine ITSM TVJ = 45°C VR = 0 Maximum Ratings
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600-20io1
600-22io1
MCC19
ixys MDD 172 12
motor IG 2200 19
IXYs MCO
ixys mco 255
MCC132
MCC161
MCC162
MCC170
MCC72
MCC16
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ixys dsei 2x61
Abstract: dsei 2x60 IXYS DSEI 2 IXYS DSEI 2X 2x61
Text: DSEI 2x61 Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 600 600 IFAVM = 2x60 A VRRM = 600 V trr = 35 ns Type DSEI 2x 61-06P D5 Symbol Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM TC = 70°C; rectangular; d = 0.5 tP < 10 µs; rep. rating; pulse width limited by TVJM
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61-06P
ixys dsei 2x61
dsei 2x60
IXYS DSEI 2
IXYS DSEI 2X
2x61
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Epitaxial Diode FRED VRRM 1200 V 40 ns
Abstract: 2X161-12P diode 29
Text: DSEI 2x161-12P IFAVM = 2x128 A VRRM = 1200 V trr = 40 ns Fast Recovery Epitaxial Diode FRED ECO-PAC 2 Preliminary Data Sheet VRRM V V 1200 1200 A C -1 IK -10 LN -9 V X -18 Typ DSEI 2x161-12P Symbol Conditions IFRMS TVJ = TVJM 270 A IFAVM * TC = 70°C; rectangular; d = 0.5
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2x161-12P
2x128
Epitaxial Diode FRED VRRM 1200 V 40 ns
2X161-12P
diode 29
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IXYS DSEI 2x61-06C
Abstract: 2x61-06c ixys dsei 2x61 dsei 2x60
Text: Fast Recovery Epitaxial Diodes FRED VRSM VRRM V V 440 640 400 600 DSEI 2x61 IFAVM = 2x60 A VRRM = 400/600 V = 35 ns trr miniBLOC, SOT-227 B Type DSEI 2x61-04C DSEI 2x61-06C Symbol Test Conditions Maximum Ratings (per diode) IFRMS IFAVM ① IFRM TVJ = TVJM
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OT-227
2x61-04C
2x61-06C
IXYS DSEI 2x61-06C
2x61-06c
ixys dsei 2x61
dsei 2x60
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TO208AC
Abstract: TO-208AC TSM 1250 7550 A cs 35
Text: Phase Control Thyristors CS 35 ITRMS = 120 A ITAVM = 75 A VRRM = 800 - 1400 V VRSM VRRM VDSM VDRM V V 900 1300 1500 800 1200 1400 Type 1 2 TO-208AC TO-65 2 3 3 CS 35-08io4 CS 35-12io4 CS 35-14io4 1 1/4"-28 UNF-2 A Symbol Test Conditions ITRMS ITAVM TVJ = TVJM
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O-208AC
35-08io4
35-12io4
35-14io4
TO208AC
TO-208AC
TSM 1250
7550 A
cs 35
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Untitled
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diode FRED VRSM V 1000 VRRM DSEI 12 IFAVM = 12 A VRRM = 1000 V = 50 ns trr C A Type TO-220 AC V 1000 DSEI 12-10A C C A Symbol Test Conditions IFRMS IFAVM ① IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5 t P < 10 µs; rep. rating, pulse width limited by TVJM
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O-220
2-10A
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44-12N1
Abstract: M5 DIODE 22-35 L M5 DIODE 22-35 K/M5 DIODE 22-35 L 44-08N1
Text: Diode Modules MDD 44 IFRMS = 2 x 100 A I FAVM = 2 x 64 A VRRM = 800 - 1800 V VRSM VRRM V V 3 Type 1 2 2 1 900 1300 1500 1700 1900 800 1200 1400 1600 1800 Symbol IFRMS I FAVM Test Conditions TVJ = TVJM TC = 92°C; 180° sine TC = 100°C; 180° sine I FSM TVJ = 45°C;
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600 Va ups
Abstract: No abstract text available
Text: DH 90 Advanced Technical Information IFAVM = 87 A VRRM = 600 V trr = 100 ns Fast Recovery Diode SONIC series VRSM VRRM V V 600 600 Type C A TO-247 AD C DH 90-06A A C A = Anode, C = Cathode Conditions Maximum Ratings IFRMS IFAVM IFRM TVJ = TVJM TC = 80°C; rectangular, d = 0.5
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O-247
0-06A
600 Va ups
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thyristor Itav 60 Itrms 100
Abstract: No abstract text available
Text: MCO 25 Single Thyristor Module ITRMS = 49 A VRRM = 1200-1600 V ITAV = 31 A Preliminary data VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 G1 K2/4 Type miniBLOC, SOT-227 B K2 G1 MCO 25-12io6 MCO 25-16io6 A3 K4 A3 Symbol Conditions ITRMS ITAV TVJ = TVJM TC = 80°C; 180° sine
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OT-227
25-12io6
25-16io6
thyristor Itav 60 Itrms 100
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single thyristor
Abstract: thyristor Itav 60 Itrms 100
Text: MCO 75 Single Thyristor Module ITRMS = 121 A VRRM = 1200-1600 V ITAV = 77 A Preliminary data VRSM VDSM VRRM VDRM V V 1200 1600 1200 1600 G1 K2/4 Type miniBLOC, SOT-227 B K2 G1 MCO 75-12io6 MCO 75-16io6 A3 K4 A3 Symbol Conditions ITRMS ITAV TVJ = TVJM TC = 80°C; 180° sine
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OT-227
75-12io6
75-16io6
single thyristor
thyristor Itav 60 Itrms 100
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E72873
Abstract: No abstract text available
Text: MDO 600-16N1 High Power Diode Modules VRSM V 1700 VRRM V 1600 IFRMS = IFAVM = VRRM = 3 Type 955 A 608 A 1600 V 3 2 2 MDO 600-16N1 E72873 Symbol Conditions IFRMS IFAVM TVJ = TVJM TC = 85°C; 180° sine IFSM TVJ = 45°C; VR = 0 I2t Maximum Ratings 955 608 A
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600-16N1
E72873
20100203a
E72873
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ixys dsei 12-10a
Abstract: 24A12 IXYS 12-10A diode 6A 1000v
Text: DSEI 12-10A Fast Recovery Epitaxial Diode FRED VRSM VRRM V V 1000 1000 IFAV = 12 A VRRM = 1000 V trr = 50 s Type A C TO-220 AC C A DSEI 12-10A C A = Anode, C = Cathode Symbol Conditions IFRMS IFAVM IFRM TVJ = TVJM TC = 100°C; rectangular, d = 0.5
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2-10A
O-220
ixys dsei 12-10a
24A12
IXYS 12-10A
diode 6A 1000v
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CTD100
Abstract: SIMPLE motor dc 6v DEECorp. thyristor CDT100 CTD10 DEECorp thyristor 10A thyristor DATASHEET thyristor bridge circuit
Text: CTD100, CDT100 Thyristor-Diode Modules, Diode-Thyristor Modules Symbol Test Conditions Characteristic Values Unit 15 mA IT, IF=300A; TVJ=25 C 1.74 V For power-loss calculations only TVJ=TVJM 0.85 V IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM VT, VF VTO o 3.2 rT
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CTD100,
CDT100
-40oC
CTD/CDT100
180oC
120oC
CTD100
SIMPLE motor dc 6v
DEECorp.
thyristor
CDT100
CTD10
DEECorp
thyristor 10A
thyristor DATASHEET
thyristor bridge circuit
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Untitled
Abstract: No abstract text available
Text: High Power Diode Modules MDD255 IFRMS = 2 x 450 A ^FAVM V RRM V RSM V RRM V DSM V DRM V V 1300 1500 1700 1900 1200 1400 1600 1800 Type MDD 255-12N1 MDD 255-14N1 MDD 255-16N1 MDD 255-18N1 Symbol Test Conditions ^FRMS TVJ Tvjm Tc = 100°C; 180° sine ^FAVM ^FSM
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MDD255
255-12N1
255-14N1
255-16N1
255-18N1
D0032bfi
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Untitled
Abstract: No abstract text available
Text: T 2 4 N Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Maximum rated values Periodische Vorwärts- und Rückwärts-Spitzensperrspannung repetitive peak forward off-state and reverse voltages t»j - -40gC.tVJmax Vdrm. Vrrm Vorwärts-Stoßspitzensperrspannung
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Untitled
Abstract: No abstract text available
Text: nixYS DSEP 2x 61-06A Advanced Technical Data HiPerFRED Epitaxial Diode FAV with Soft Recovery V RSM - 1 T yp e V V rrm V 600 600 DSEP 2 x 6 1 -06A 1 M 1 !_ M Test Conditions I frms I favm I frm Tc = 6 5 °C ; rectangular, d = 0.5; per diode tP < 10 us; rep. rating, pulse width limited by TVJM
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1-06A
D2-31
D2-27
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