1000A 100V power diode
Abstract: DIODE 1000a 1000A diode 4500v SDD63HK
Text: SDD63HK 4500V Snubber Diode SPCO The SDD63HK fast recovery diode is designed for use in complex snubber circuits commonly used for gate turn-off thryistors, GTO’s, for which the low forward recovery voltage developed by the diode at extremely high di/dt is important in order to achieve full turn-off capability. It is manufactured by the
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SDD63HK
SDD63HK
1000A 100V power diode
DIODE 1000a
1000A diode
4500v
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SDD63HK
Abstract: 1000A 100V power diode DIODE 1000a 5 ohm resistor 4500v 1000A diode
Text: SDD63HK 4500V Snubber Diode The SDD63HK fast recovery diode is designed for use in complex snubber circuits commonly used for gate turn-off thryistors, GTO’s, for which the low forward recovery voltage developed by the diode at extremely high di/dt is important in order to achieve full turn-off capability. It is manufactured by the
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SDD63HK
SDD63HK
1000A 100V power diode
DIODE 1000a
5 ohm resistor
4500v
1000A diode
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calculation of IGBT snubber
Abstract: Snubber circuits theory, design and application 1 Snubber circuits theory, design and application calculation of diode snubber tranzorb diode igbt types IGBT snubber for inductive load APT0404 TRANZORB Snubber circuits theory
Text: Application Note APT0404 December 2004 Turn-Off Snubber Design for High Frequency Modules Serge Bontemps R & D Manager Advanced Power Technology Europe, Chemin de Magret, 33700, Merignac, France Turn-off snubbers are passive circuits made of diodes, resistors and capacitors dedicated to
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APT0404
APTGF300A120
calculation of IGBT snubber
Snubber circuits theory, design and application 1
Snubber circuits theory, design and application
calculation of diode snubber
tranzorb diode
igbt types
IGBT snubber for inductive load
APT0404
TRANZORB
Snubber circuits theory
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SG4000GXH29G
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TOSHIBA TECHNICAL SG4000GXH29G DATA LO W SNUBBER TYPE SG4000GXH29G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d RM —4500V R.M.S On-State Current : It (RMS) -1200A Peak Turn-Off Current
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SG4000GXH29G
SG4000GXH29G)
000V//Â
SG4000GXH29G
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TO SHIBA TECHNICAL SG4000GXH28 DATA LOW SNUBBER TYPE SG4000GXH2S Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S On-State Current : It (RMS)= 1900A Peak Turn-Off Current
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SG4000GXH28
SG4000GXH2S)
SG4000GXH28
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TO SHIBA TECHNICAL SG4000GXH29G DATA LOW SNUBBER TYPE SG4000GXH29G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S On-State Current : It (RMS)= 1200A Peak Turn-Off Current
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SG4000GXH29G
SG4000GXH29G)
SG4000GXH29G
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SG600GXH26
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TO SHIBA TECHNICAL SG600GXH26 DATA LOW SNUBBER TYPE SG600GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current
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SG600GXH26
SG600GXH26)
SG600GXH26
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TOSHIBA TECHNICAL SG4000GXH29G DATA LOW SNUBBER TYPE SG4000GXH29G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d r m = 4500V R.M.S On-State Current : It (RMS)= 1200A Peak Turn-Off Current
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SG4000GXH29G
SG4000GXH29G)
SG4000GXH29G
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SG2000EX26
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR SEMICONDUCTOR TO SHIBA TECHNICAL SG2000EX26 DATA LOW SNUBBER TYPE SG2000EX26 INVERTER APPLICATION Repetitive Peak Off-State Voltage V d R M = 2500V (Note 1) IT(RMS) = 1050A R.M.S On-State Current iTGQM = 2000A Peak Turn-Off Current
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SG2000EX26
SG2000EX26)
SG2000EX26
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL SG4000GXH29G DATA LOW SNUBBER TYPE SG4000GXH29G Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d rm ;= 4500V R.M.S On-State Current : It (RMS)= 1200A Peak Turn-Off Current
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SG4000GXH29G
SG4000GXH29G)
012QMAX
13-120M1A
SG4000GXH29G
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RCD snubber
Abstract: calculation of IGBT snubber IGBT snubber for inductive load RC VOLTAGE CLAMP snubber circuit chokhawala carroll snubber design tool snubber resistance of IGBT IGBT snubber RCD snubber for igbt 150a gto in electronic rcd snubber
Text: Snubber C onsiderations for IG BT A pplications Yi Zhang, Saed Sobhani, Rahul Chokhawala International Rectifier Corporation Applications Engineering 233 Kansas St., El Segundo, CA 90245 Abstract: Snubber circuits can be used to protect fast switching IGBTs from the turn-on and turn-off voltage
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AN-983.
RCD snubber
calculation of IGBT snubber
IGBT snubber for inductive load
RC VOLTAGE CLAMP snubber circuit
chokhawala carroll snubber design tool
snubber resistance of IGBT
IGBT snubber
RCD snubber for igbt
150a gto
in electronic rcd snubber
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SG4000GXH28
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL SG4000GXH28 DATA LOW SNUBBER TYPE SG4000GXH28J Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : Vdrm ; = 4500V R.M.S On-State Current : I t ( R M S ~ -^OOA Peak Turn-Off Current
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SG4000GXH28
SG4000GXH28J
13-120N1A
SG4000GXH28
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SG4000EX26
Abstract: No abstract text available
Text: TOSHIBA SG4000EX26 TOSHIBA GATE TURN-OFF THYRISTOR LOW SNUBBER TYPE SG4000EX26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d R M - 2500V Note 1 R.M.S On-State Current : IT (RMS) = 2000A (Tf := 76°c ) Peak Turn-Off Current : It GQM —4000A
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SG4000EX26
00A//Â
000V//
10ms-Width
SG4000EX26
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Untitled
Abstract: No abstract text available
Text: TOSHIBA SG4000EX26 TOSHIBA GATE TURN-OFF THYRISTOR LOW SNUBBER TYPE SG4000EX26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d R M - 2500V Note 1 R.M.S On-State Current : IT (RMS) = 2000A (Tf := 76°c ) Peak Turn-Off Current : It GQM —4000A
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SG4000EX26
--4000A
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SG4000GXH26
Abstract: inverter lg ig
Text: T O S H IB A SG4000GXH26 TOSHIBA GATE TURN-OFF THYRISTOR LOW SNUBBER TYPE SG4000GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current Critical Rate of Rise of Off-State Voltage
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SG4000GXH26
Rat100
SG4000GXH26
inverter lg ig
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SG600GXH26
Abstract: ls025 SG-60 CS-05
Text: T O S H IB A SG600GXH26 TOSHIBA GATE TURN-OFF THYRISTOR LO W SNUBBER TYPE SG600GXH26 Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current Critical Rate of Rise of Off-State Voltage
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SG600GXH26
VD-2250V
Tj-125Â
SG600GXH26
ls025
SG-60
CS-05
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR SEM ICONDUCTOR T O SH IB A TECHNICAL SG 1000GXH26 DATA LOW SNUBBER TYPE SG1000GXH26 Unit in mm INVERTER APPLICATION 43MAX- 4500V I T ( R M S ) = 500A Repetitive Peak Off-State Voltage R.M.S. On-State Current Peak Turn-Off Current
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SG1000GXH26)
1000GXH26
43MAX-
SG1000GXH26
SG1Q0QGXH26-4*
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL SG4000GXH26 DATA LOW SNUBBER TYPE SG4000GXH26J INVERTER APPLICATION • • • • • Repetitive Peak Off-State Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current
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SG4000GXH26
SG4000GXH26J
SG4000GXH26
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SG4000JX26
Abstract: No abstract text available
Text: TOSHIBA SG4000JX26 SG4000JX26 TOSHIBA GATE TURN-OFF THYRISTOR INVERTER APPLICATION • • • • • LO W SNUBBER TYPE Unit in mm Repetitive Peak Off-State Voltage : Vd RM = 6000V Note 1 R.M.S On-State Current : lT(RMS)~1600A(Tf=75°C) Peak Turn-Off Current
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SG4000JX26
4000a
00A//Â
250V//
SG4000JX26
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SG600GXH26
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR. SEMICONDUCTOR T O SH IB A TECHNICAL SG600GXH26 DATA LOW SNUBBER TYPE SG600GXH26 Unit in mm INVERTER APPLICATION • • • • • Repetitive Peak Off-State Voltage R.M.S On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current
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SG600GXH26
SG600GXH26)
SG600GXH26
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SG2000GXH26
Abstract: No abstract text available
Text: TO SH IBA TENTATIVE SG2000GXH26 TOSHIBA GATE TURN-OFF THYRISTOR INVERTER APPLICATION LOW SNUBBER TYPE SG2000GXH26 Repetitive Peak Off-State Voltage : V d r m = 4500 V Note 1 R.M.S On-State Current : IT (RMS) = 1(>00 A (Tf = 76°C) Peak Turn-Off Current : It GQM = 2000 A
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SG2000GXH26
SG2000GXH26
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SG2000EX26
Abstract: No abstract text available
Text: TO SH IBA SG2000EX26 TOSHIBA GATE TURN-OFF THYRISTOR INVERTER APPLICATION • • • • • LOW SNUBBER TYPE SG2000EX26 Unit in mm Repetitive Peak Off-State Voltage : V d r m = 2500 V Note 1 R.M.S On-State Current : It (RMS) = 1050 A Peak Turn-Off Current
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SG2000EX26
SG2000EX26
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GATE TURN-OFF THYRISTOR. SEM ICONDUCTOR T O SH IB A TECHNICAL SG1000GXH26 DATA LOW SNUBBER TYPE SG1000GXH26J Unit in mm INVERTER APPLICATION • • • • • Repetitive Peak Off-State Voltage R.M.S. On-State Current Peak Turn-Off Current Critical Rate of Rise of On-State Current
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SG1000GXH26
SG1000GXH26J
500AlTGQM=
13-75B1A
SG1000GXH26)
-500m
SG1000GXH26
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SG4000GXH28
Abstract: No abstract text available
Text: TOSHIBA SG4000GXH28 TOSHIBA GATE TURN-OFF THYRISTOR INVERTER APPLICATION LOW SNUBBER TYPE SG4000GXH28 Unit in mm Repetitive Peak Off-State Voltage : V d RM —4500V R.M.S On-State Current : It RMS - 1900A Peak Turn-Off Current : It g QM = 4000A Critical Rate of Rise of On-State Current : di/dt = 500A/ jus
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SG4000GXH28
00A//Â
000V//Â
SG4000GXH28
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