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    TUNNEL DIODE GENERAL ELECTRIC Search Results

    TUNNEL DIODE GENERAL ELECTRIC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    TUNNEL DIODE GENERAL ELECTRIC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    back Tunnel diode

    Abstract: SCR WITH I-V CHARACTERISTICS tunnel diode
    Text: GENERAL INFORMATION 1 Inside Vantis’ EE CMOS PLD Technology TECHNOLOGY DESCRIPTION The EE CMOS technology used by Vantis in programmable logic is a single-poly, double- or triple-metal n-well process. It has been optimized for high-speed programmable logic devices,


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    schematic diagram of energy saving device

    Abstract: scr inverter schematic circuit Power INVERTER schematic circuit circuit diagram of energy saving device dc to ac inverter by scr SCR Inverter datasheet Tunnel diode schematic diagram of power inverter SCR gate Control IC back Tunnel diode
    Text: Inside Vantis’ EE CMOS PLD Technology TECHNOLOGY DESCRIPTION The EE CMOS technology used by Vantis in programmable logic is a single-poly, double- or triple-metal process. It has been optimized for high-speed programmable logic devices, which do not have the same density constraints of memory devices. The basic characteristics of the EE


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    tps59610

    Abstract: thermistor d503 TP218 IC TPS59124
    Text: User's Guide SLUU465 – November 2010 An 8-V to 14-V Vin 2010 Atom E6xx Tunnel Creek Power System The TPS59610EVM-634 evaluation module EVM is a complete solution for the 2010 Atom™ E6xx Tunnel Creek Power System from a 12-V input bus. The EVM uses the TPS59610 for Atom CPU and


    Original     		SLUU465 TPS59610EVM-634 TPS59610 TPS51120 TPS54326 TPS59124 TPS51100 TPS74801 CSD86330Q3D) thermistor d503 TP218 IC PDF

    GaAs tunnel diode

    Abstract: tunnel diode GaAs darlington transistor for audio power application photo thyristor diode tunnel DATASHEET TUNNEL DIODE Tunnel diode tunnel diode high frequency photocoupler Thyristor transistor power
    Text: Philips Semiconductors Pro Electron Type Numbering System General PRO ELECTRON TYPE NUMBERING SYSTEM U Basic type number W surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples


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    6 pin TRANSISTOR SMD CODE 21

    Abstract: germanium diode smd 6 pin TRANSISTOR SMD CODE p SMD CODE y17 transistor smd z a smd transistor 5 lead R Y SMD TRANSISTOR BRT12H-X009T OPTOCOUPLER thyristor photo thyristor
    Text: VISHAY Vishay Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The type number of semiconductor devices consists of two letters followed by a serial number For example: C Material


    Original     		21-Oct-03 CNY17F-2X017T 4N35-X016 BRT12H-X009T 6 pin TRANSISTOR SMD CODE 21 germanium diode smd 6 pin TRANSISTOR SMD CODE p SMD CODE y17 transistor smd z a smd transistor 5 lead R Y SMD TRANSISTOR BRT12H-X009T OPTOCOUPLER thyristor photo thyristor PDF

    Conventions used in Presenting Technical Data

    Abstract: 80057 germanium diode smd R Y SMD TRANSISTOR smd dual transistor G 9 Optocoupler with thyristor OPTOCOUPLER thyristor 4N35-X016 optocoupler SFH615 datasheet suppressor diode smd
    Text: Conventions used in Presenting Technical Vishay Semiconductors Conventions used in Presenting Technical Data NOMENCLATURE FOR SEMICONDUCTOR DEVICES ACCORDING TO PRO ELECTRON The type number of semiconductor devices consists of two letters followed by a serial number.


    Original     		10-Sep-07 Conventions used in Presenting Technical Data 80057 germanium diode smd R Y SMD TRANSISTOR smd dual transistor G 9 Optocoupler with thyristor OPTOCOUPLER thyristor 4N35-X016 optocoupler SFH615 datasheet suppressor diode smd PDF

    transistor IR 9317

    Abstract: 84121 photo thyristor audio MAGNETIC HEAD MAGNETIC HEAD circuit audio oscillator tunnel diode 9315 DATASHEET TUNNEL DIODE MAGNETIC HEAD circuit oscillator tunnel diode datasheet
    Text: VISHAY Vishay Semiconductors Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron The part number of a semiconductor device consists of two letters followed by a serial number. For example: B Material


    Original     		08-Jan-04 transistor IR 9317 84121 photo thyristor audio MAGNETIC HEAD MAGNETIC HEAD circuit audio oscillator tunnel diode 9315 DATASHEET TUNNEL DIODE MAGNETIC HEAD circuit oscillator tunnel diode datasheet PDF

    anemometer

    Abstract: distance measurement using camera based ir sensor high accuracy tunnel sensor hot wire anemometer ITS-90 Q206 U100 tunnel diode application TUNNEL DIODE
    Text: Application Note 29 July 2009 PDF Name: thermal_characterization_process.pdf Thermal Characterization Process For Open-Frame Board Mounted Power Modules ƒ Contents ƒ ƒ ƒ ƒ ƒ ƒ ƒ Characteristics of Open-Frame Modules Preparation for Thermal Testing


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    MIL-STD-750E

    Abstract: 1N21B diode cc 3053 MIL-PRF-680 D65019 rectifier 2037-1 TT 2076 SAE-ARP-743 1N21B diode 1N21* Diode Detector Holder
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 June 2007 INCH - POUND MIL-STD-750E 20 November 2006 SUPERSEDING MIL-STD-750D 28 FEBRUARY 1995 DEPARTMENT OF DEFENSE TEST METHOD STANDARD TEST METHODS FOR SEMICONDUCTOR DEVICES


    Original     		MIL-STD-750E MIL-STD-750D MIL-STD-750E 1N21B diode cc 3053 MIL-PRF-680 D65019 rectifier 2037-1 TT 2076 SAE-ARP-743 1N21B diode 1N21* Diode Detector Holder PDF

    SO20-300

    Abstract: QFP PACKAGE thermal resistance SO14-150 MBK360 SOT411 QFP-80-14 die bond diode handbook MBK368 QFP120
    Text: CHAPTER 6 THERMAL DESIGN CONSIDERATIONS page Introduction 6-2 Thermal resistance 6-2 Junction temperature 6-2 Factors affecting Rth j-a 6-2 Thermal resistance test methods 6-3 Test procedure 6-3 Forced air factors for thermal resistance 6-4 Thermal resistance data - assumptions and precautions


    Original     		OT111-1 OT157-2 DBS13P OT141-6 DBS17P OT243-1 DBS23P OT411-1 HSOP20 OT418-2 SO20-300 QFP PACKAGE thermal resistance SO14-150 MBK360 SOT411 QFP-80-14 die bond diode handbook MBK368 QFP120 PDF

    DNQ12

    Abstract: No abstract text available
    Text: FEATURES Š High efficiency: Š Small size and low profile: Š Fixed frequency operation 93% @ 12Vin, 3.3V/25A out 31.8x50.8x8.50mm 1.25”x2.00”x0.34” Output voltage programmable from Š 0.8Vdc to 5.5Vdc via external resistor Š Remote ON/OFF & Remote sense


    Original     		12Vin, V/25A EN60950-1) DNQ12, 10-14Vin, DNQ12S, DNQ12SIP25 DNQ12 PDF

    H48SA

    Abstract: No abstract text available
    Text: FEATURES Š High efficiency: 94.2% @ 54V/ 10.2A Š Standard footprint: 58.4x61.0x11.2mm 2.30”x2.40”x0.44” (without heat spreader) 58.4x61.0x12.7mm (2.30”x2.40”x0.50”) (with heat spreader) Š Industry standard pin out Š Monotonic startup into normal and pre-bias


    Original     		EN60950-1) H48SA53010, 4V/10 H48SA53010 H48SA PDF

    iso 14001 sanyo

    Abstract: tunnel diode back Tunnel diode
    Text: FEATURES w High efficiency: 91% @ 12Vin, 5V/4A out w Small size and low profile: 17.8 x 15.0 x 7.8mm 0.70”x 0.59” x 0.31” w Output voltage adjustment: 0.9V~5V w Monotonic startup into normal and pre-biased loads w Input UVLO, output OCP w Remote ON/OFF (Positive)


    Original     		12Vin, EN60950) iso 14001 sanyo tunnel diode back Tunnel diode PDF

    DNQ12

    Abstract: DN-Q12
    Text: FEATURES Š High efficiency: Š Small size and low profile: Š Fixed frequency operation 93% @ 12Vin, 3.3V/25A out 31.8x50.8x8.50mm 1.25”x2.00”x0.34” Output voltage programmable from Š 0.8Vdc to 5.5Vdc via external resistor Š Remote ON/OFF & Remote sense


    Original     		12Vin, V/25A EN60950-1) 73/23/EEC 93/68/EEC DNQ12, 10-14Vin, DNQ12S, DNQ12SIP25 DNQ12 DN-Q12 PDF

    back Tunnel diode

    Abstract: metal detectors circuit "back diode" point contact diode tunnel diode application
    Text: D fU M iu 'H C General Infotmation RF detection is achieved through utilization of the nonlinear, current-voltage characteristics of a semiconducting junction. Two fundamental detector diode types are used; silicon-based, Schottky barrier and germanium-based, tunnel or back diodes.


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    back Tunnel diode

    Abstract: Tunnel Diode tunnel diode application
    Text: Detector Overview General Inform ation RF detection is achieved through utilization o f th e nonlinear, current-voltage characteristics o f a semiconducting junction. Two fundamental d ete cto r diode types are used; silicon-based, Schottky barrie r and germanium-based, tunnel o r back diodes.


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    Ry110

    Abstract: diode cross reference RY104 a2305 RY115 MICROWAVE ASSOCIATES IN3716 diode ry24 RY101 1N3717
    Text: D 94D 0 0 0 1 3 2 5 7 8 2 5 2 CUSTOM COMPONENTS INC 7 " - o / - o ^ Ë F | 2 5 7 f l E S S D0DDD13 4 Custom Components, Inc. Box SSUt Lebanon, AT. J. 088SS 201 534-6151 TUNNEL DIODE CROSS REFERENCE GENERAL ELECTRIC AERTECH AERTECH # C C I# AERTECH # CCI #


    OCR Scan     		QD0D013 534-61S1 A1D207A A1D207E A1E207A A1E207E A1A210D A1A210E A1B210D A1B210E Ry110 diode cross reference RY104 a2305 RY115 MICROWAVE ASSOCIATES IN3716 diode ry24 RY101 1N3717 PDF

    tunnel diode General Electric

    Abstract: 1N3717 1N3716 doppler radar circuit for speed sensing "tunnel diode" oscillator TD-9 General Electric BD400 TUNNEL DIODE tunnel diode high frequency 1N3712
    Text: TUNNEL DIODES PACKAGES a APPLICATIONS UHF O scillator Level Detector Peak Se n sin g Frequency Divider C onverter High Speed Logic Sa m plin g C ircuits Detectors M ix e rs Limiter» C o m p re sso rs Pow er M o n ito rs Fast rise time pulse gen e rators A m plitude Discrim inator


    OCR Scan     		TD400 BD400 tunnel diode General Electric 1N3717 1N3716 doppler radar circuit for speed sensing "tunnel diode" oscillator TD-9 General Electric TUNNEL DIODE tunnel diode high frequency 1N3712 PDF

    tunnel diode General Electric

    Abstract: TD261 TD266A TD262A TD261A TUNNEL DIODE TD263 TD-266A TD263AB TD275A
    Text: 6 Germanium TYPE TD261,A TD271.A TD262.A TD272.A TD263.A,B TD273,A,B TD264.A TD274.A TD265.A TD275.A TD266.A TD276,A Diodes The General Electric TD261.A through TD266A series o f tunnel diodes are extremely fast, P-Type germanium devices with peak currents o f 2.2, 4.7,' 10, 22, 50 and 100 ma. Among the unusual


    OCR Scan     		TD261 TD271 TD262 TD272 TD263AB TD273 TD264 TD274 TD265 TD275 tunnel diode General Electric TD266A TD262A TD261A TUNNEL DIODE TD263 TD-266A TD275A PDF

    kEJ capacitor

    Abstract: back Tunnel diode
    Text: Inside Vantis' EE CMOS PLD Technology 'V BEYOND PERFORMANCE TECHNOLOGY DESCRIPTION The EE CMOS technology used by Vantis in programmable logic is a single-poly, double- or triple-metal process. It has been optimized for high-speed programmable logic devices, which


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    backward diode

    Abstract: tunnel diode General Electric "backward diode"
    Text: P j p i GE C P L E S S E Y CT3508-1.2 MIXER & DETECTOR DIODES - INTRODUCTION M ETAL S E M IC O N D U C TO R SC H O TTK Y BA RRIER DIO DES INTRODUCTION A mixer is a sensitive receiver circuit which makes use of the nonlinear properties of a mixer diode to produce a


    OCR Scan     		CT3508-1 backward diode tunnel diode General Electric "backward diode" PDF

    9999 DIODE

    Abstract: high frequency diode Low frequency power transistor step recovery diode tunnel diode high frequency "high frequency Diode" diode tunnel transistor power audio
    Text: VISHAY Vishay Telefunken General Information Conventions Used in Presenting Technical Data Nomenclature for Semiconductor Devices According to Pro Electron I The part number of a semiconductor device consists of two letters followed by a serial number.


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    DIODE BZW70

    Abstract: Germanium Diode aa112 cqy17 BPW50 BZY74-C6V3 BPW50-9 g1 smd transistor thyristor smd AA112 germanium diode smd
    Text: Philips Semiconductors General Pro electron type numbering DISCRETE SEMICONDUCTORS U Transistor; power, switching Basic type number W Surface acoustic wave device This type designation code applies to discrete semiconductor devices not integrated circuits , multiples


    OCR Scan     		BZW10-15B. BYT-100 -100R. DIODE BZW70 Germanium Diode aa112 cqy17 BPW50 BZY74-C6V3 BPW50-9 g1 smd transistor thyristor smd AA112 germanium diode smd PDF

    BPW50

    Abstract: BZY74-C6V3 BZW70 BPW50-12 bzw10 BYT-100 BZW10-15 Byt100 BPW50-9 DIODE BZW70
    Text: Philips Semiconductors General Pro electron type numbering PRO ELECTRON TYPE NUMBERING SYSTEM T Control or switching device; e.g. thyristor, low power; with special third letter U Transistor; power, switching W Surface acoustic wave device Basic type number


    OCR Scan     		the10. BPW50-6, BPW50-9, BPW50-12. BZW70-9V1 BZW10-15B. BLU80-24. BPW50 BZY74-C6V3 BZW70 BPW50-12 bzw10 BYT-100 BZW10-15 Byt100 BPW50-9 DIODE BZW70 PDF