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    TPD*1039s

    Abstract: TPD7001BF TPD2005F 5252 E 0903 TPD7203 zener diode reference guide highside switch array tpd1008sa TPD1039S tpd2007f
    Text: Intelligent Power Devices PRODUCT GUIDE Power MOSFETs with Built-In Protection Function Outline • This power MOSFET incorporates a protection function using a newly-developed simple process. ● Chip Control Section Power Section ● Construction N-MOS and DMOS process


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    Abstract: No abstract text available
    Text: Features Dielectric isolation 1 Toshiba original structure implement high-blocking voltages (250 V and 480 V). (2) Input pins are driven by voltage. They can be directly driven from a microprocessor. (3) Because the structure is latchup-free (all devices are isolated by dielectrics to prevent parasitic


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