Substrate alumina
Abstract: TT12
Text: TEPRO TYPE “TT” ELECTRO TECHNIK CURRENT SENSE, SURFACE MOUNT, CHIP RESISTORS FEATURES: Standard tolerances to ±0.5% International standard size Highly reliable multilayer electrode construction Compatible with both flow soldering and reflow soldering
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100ppm
Substrate alumina
TT12
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Untitled
Abstract: No abstract text available
Text: TEPRO TYPE “TT” ELECTRO TECHNIK CURRENT SENSE, SURFACE MOUNT, CHIP RESISTORS FEATURES: Standard tolerances to ±0.5% International standard size Highly reliable multilayer electrode construction Compatible with both flow soldering and reflow soldering
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50ppm
55ppm
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TT136
Abstract: R8X0 ccn5 deb1 256ms electric diagram acs 150
Text: [AK4160] AK4160 16-channel Capacitive Touch Sensor IC GENERAL DESCRIPTION The AK4160 is a low operating voltage and low power consumption 16-channel capacitive touch sensor. Maximum 8 channels out of the 16-channel can be configured to LED drive or GPIO. The AK4160 has a
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AK4160]
AK4160
16-channel
AK4160
MS1313-E-01
TT136
R8X0
ccn5
deb1
256ms
electric diagram acs 150
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Untitled
Abstract: No abstract text available
Text: [AK4160] AK4160 16-channel Capacitive Touch Sensor IC GENERAL DESCRIPTION The AK4160 is a low operating voltage and low power consumption 16-channel capacitive touch sensor. Maximum 8 channels out of the 16-channel can be configured to LED drive or GPIO. The AK4160 has a
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AK4160]
AK4160
16-channel
AK4160
MS1313-E-01
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon RF Switching Diode BA592 • For VHF band switching in TV/VTR tuners • Low forward resistance, small capacitance, small inductance Type Marking Ordering Code tape and reel BA 592 blue S Q62702-A950 Pin Configuration Package SOD-323 o- k j —— »
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BA592
Q62702-A950
OD-323
535b05
D1HD174
S35bD5
D1ED175
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Schottky Diode BAT 63 • Low barrier diode for mixer and detectors up to GHz frequencies Type BAT 63 Ordering Code tape and reel 1 Q62702-A1004 A1 Pin Configuration 2 3 4 C2 A2 C1 Marking Package 63 SOT-143 Maximum Ratings Parameter Symbol
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Q62702-A1004
OT-143
E35bGS
01503St>
W111M
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JB TRANSISTOR SMD MARKING CODE
Abstract: Q62702-S217
Text: BSS 296 Infineon t« c h n o lo g t« s SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level •^ G S th 3 = 0.8.2.0V Pin 1 VPTO5540 Pin 2 G (/> Type k> ^ D S (o n ) Package Marking 0.8 A 0.8 fl TO-92 SS 296 BSS 296 100 V
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VPTO5540
Q62702-S217
E6296
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
JB TRANSISTOR SMD MARKING CODE
Q62702-S217
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Untitled
Abstract: No abstract text available
Text: SILIC O N EPICAP DIODES MMBV409LT1* MV409* . . . designed fo r general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods. • High Q w ith Guaranteed M inim um Values at VHF Frequencies
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MMBV409LT1*
MV409*
OT-23
O-236AB)
MV409
MMBV409LT1
O-226AC)
MM8V409LT1
MMBV409L
725t4
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Untitled
Abstract: No abstract text available
Text: C O N T A C T AR RA N G EM EN T 'O cTO cm O JcticlO cticir iJclülülülO C T O cU cU clflcl 1 mmn n n s n u E rr^ r-Ji e me h h s h h e h 1][I]Ì]Ì]0000[I]00 l u m i n i l i ] h ih h h ì ] S liiiiiiiiB umili]0 0 B B M Si] NOTES: m A A 0 IS E] 10[01010 IS 10[0 IS
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154P0O
QWIF198A
TA0213
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Untitled
Abstract: No abstract text available
Text: icKicon me, ALUMINUM ELECTROLYTIC CAPACITORS BT B High T em peratu re R ang e, For + 1 2 5 ° C Use L ong Life Anti-Solvent Feature • Highly dependable reliability withstanding load life of 5,000 hours at + 1 2 5 °C . • Suited for automobile electronics where heavy duty services are indispensable.
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4700pF
120Hz,
8X115
10X12
10X16
10X20
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3H2 philips
Abstract: marking B5T BFG197W D054 DIN45004B TT5 marking
Text: Philips Semiconductors Product specification BFG197W BFG197W/X; BFG197W/XR NPN 7 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG197W V5 • Gold metallization ensures excellent reliability. BFG197W/X V8 BFG197W/XR
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BFG197W
BFG197W/X;
BFG197W/XR
OT343
OT343R
BFG197W/X
BFG197W/XR
BFG197W
BFG197W/X
3H2 philips
marking B5T
D054
DIN45004B
TT5 marking
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marking 82 sot343
Abstract: zo 103 ma BFG197W DIN45004B MS80 Ghz dB transistor
Text: Product specification Philips Semiconductors BFG197W BFG197W/X; BFG197W/XR NPN 7 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure • Gold metallization ensures excellent reliability. BFG197W BFG197W/X BFG197W/XR
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BFG197W
BFG197W/X;
BFG197W/XR
OT343
OT343R
BFG197W/X
BFG197W/XR
BFG197W
BFG197W/X
marking 82 sot343
zo 103 ma
DIN45004B
MS80
Ghz dB transistor
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2398 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2398 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 5.9M A X. • • • • Low Drain-Source ON Resistance : Rd S (ON)= 22mQ (Typ.)
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2SK2398
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kp 72
Abstract: No abstract text available
Text: ,•— Infineon technologies Surface Mount Piezoresistive Silicon Absolute Pressure Sensor KP 202-R/RK KP 203-R/RK Preliminary Features • • • • • High sensitivity and linearity Fast response Very small dimensions Low cost Produced in qualified semiconductor
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202-R/RK
203-R/RK
202-R
202-R
203-R
203-R
203-RK
202-RK
013M5I0
217tective
kp 72
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Untitled
Abstract: No abstract text available
Text: Lj ME » P O M E R O • 72=^21 DODS^Ûl 1Tb I IPRX FG1000AV r POhlERFX INC Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France(43) 72.75.15 Asymmetric Gate-Turn-Off Thyristors
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FG1000AV
BP107,
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2SK852
Abstract: jb 5531 JE 33 26L55 T1IG
Text: NEC o ^ n y ^ Ju n ctio n Field Effect Transistor i & m t e w m m N-Channel Silicon Junction Field-Effect Transistor Audio Frequency Amplifier f t W f t High gm < ntzshSi f i j f t o ¡ S ita . V o gdo> r - M i -c r < + •/ 7 u > = 10 V, V<; s = 0 1.25 + 0.1
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Untitled
Abstract: No abstract text available
Text: W hnl H E W L E T T mL'HMP A C K A R D 0.5 - 4 GHz 3 V Low Current GaAs MMIC LNA Technical Data MGA-87563 Features • Ultra-M iniature Package • 1.6 dB Min. N oise Figure at 2.4 GHz • 12.5 dB Gain at 2.4 GHz • Single + 3 V or 5 V Supply, 4.5 mA Current
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MGA-87563
OT-363
SC-70)
4MM75Ã
MGA-87563
offersA-87563
MGA-87563-TR1
7563-BLK
OT-363/SC-70)
5963-6677E
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HS508
Abstract: S8Y1
Text: HARRIS SEMICOND SECTOR m U ^ bSE T> Bi M302271 0 0 ^ 1 7 3 12T H H A S HS-548RH HS~549RH HARRIS l S E M I C O N D U C T O R 19 9 3 Single 8 /D ifferential 4 Channel CMOS Analog M ultiplexers with Active Overvoltage Protection Pinouts Features • This Circuit is Processed in Accordance to MIL-STD-883
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M302271
HS-548RH
549RH
HS1-548
MIL-STD-883
MIL-M-38510.
HS508
S8Y1
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Instrumentation Amplifier IC 741
Abstract: marking v0p 5962-88630 QPL-38510 88630 OTAX OTAX OF 5962-8863002VX 5962-8863001VX 5962-E923
Text: < 5962-E923 D ISTR IB U TIO N STA TE M E N T A. I Approved lor public release; distribution is unlim ited. • ■ - This Material Copyrighted By Its Respective Manufacturer -,- 1. SCOPE 1.1 Scope. This drawing describes device requirements fo r c la s s B m icro circu its in accordance
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5962-8863C
5962-E923
5962-8863001VX
AMP-01AX/883
5962-8863002VX
AMP-01BX/883
5962-88630023X
AMP-01BTC/883
Instrumentation Amplifier IC 741
marking v0p
5962-88630
QPL-38510
88630
OTAX
OTAX OF
5962-8863002VX
5962-E923
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Untitled
Abstract: No abstract text available
Text: SONY LCX007CN 3.4cm 1.35-inch Black-and-White LCD Panel Description The LCX007CN is a 3.4cm diagonal active matrix TFT-LC D panel addressed by polycrystalline silicon super thin film transistors with built-in peripheral driving circuit. Use of three panels in combination
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LCX007CN
35-inch)
LCX007CN
LCX007CL
LCX007CL.
0C2DS32
PIN20
DD2DS33
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eahf
Abstract: No abstract text available
Text: FaStlSHfcitütlîUol'T i - / U ' > 7 ^ IC/M onolithic ICs a n W f ê H £ Î I i f i t Ê l - '3 l 'T / / In te g r a te d a n d r b fifr ftli, $>5ô t b , o 3 i : p nD l î i - t î 5 C ir c u it Q u a lit y A s s u r a n c e R e lia b ilit y Q u a lity F irs t— th e u n d e rly in g c o rp o ra te go a l o f R O H M
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ad7820tq
Abstract: No abstract text available
Text: 1. DATE NOTICE OF REVISION NOR (YYMMDD) 96-01-11 THIS REVISION DESCRIBED BELOW HAS BEEN AUTHORIZED FOR THE DOCUMENT LISTED. data «stimate or any other aspect of this collection of information, includi Headwiartare Service«, Directorate for Information Operations and
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giectJ0704-01S8J,
AD7820UQ/883B
AD7820U
/883B
AD7820TQ/883B
AD7820TE/883B
M38510/146
M38S10/I46
M38510/14602BRX
M38510/14602B2X
ad7820tq
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54ACS14
Abstract: UT54ACS14UVAH 5962H9652401VXA 5962H9652401VXC qml-38535 54ACS 5962H965 UT54ACS14UQCH
Text: REVISIONS LTR DATE YR-MO-DA DESCRIPTION APPROVED REV SHEET REV SHEET REV S T A T U S OF SHEETS REV SHEET P M IC N /A STANDARD M IC R O C IR C U IT D R A W IN G THIS DRAW ING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTM ENT OF DEFENSE
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10dm706
002L04b
54ACS14
UT54ACS14UVAH
5962H9652401VXA
5962H9652401VXC
qml-38535
54ACS
5962H965
UT54ACS14UQCH
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WT-540
Abstract: 8605101EX 27S02 ltpz E1322 27LS03 27S03 8605106EX 8605104E 8605101
Text: REVISIONS LTR DATE YB-MO-OA DESCRIPTION A Update vendor's part number. Change to m ilit a r y drawing format. 1987 JULY 7 E d ito ria l changes throughout. B Made technical changes to table I . Added device types 07, 08, and 09 fo r vendor CAGE 34335. Changes to fig u re s 4 , 5 , and 6.
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el1AM27S03-20/BFA
IAM27S03-20/B2A
8605109EX
8605109FX
86051092X
1AM27LS03-30/BEA
1AM27LS03-30/BFA
IAM27LS03-30/B2A
WT-540
8605101EX
27S02
ltpz
E1322
27LS03
27S03
8605106EX
8605104E
8605101
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