Untitled
Abstract: No abstract text available
Text: KSM038AN06A0 / KSMI038AN06A0 TO-220AB Features TO-262AB D = 80A • r DS ON = 3.5mΩ (Typ.), V GS = 10V, I • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101
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KSM038AN06A0
KSMI038AN06A0
O-220AB
O-262AB
24e-3
08e-3
28e-2
FDP035AN06A0T
45e-3
65e-2
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67E-3
Abstract: FDI038AN06A0 FDP038AN06A0 n10 diode abs s1a NL104
Text: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8mΩ Features Applications • r DS ON = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge
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FDP038AN06A0
FDI038AN06A0
O-220AB
O-262AB
67E-3
FDI038AN06A0
n10 diode
abs s1a
NL104
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67E-3
Abstract: FDI038AN06A0 FDP038AN06A0
Text: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8mΩ Features Applications • r DS ON = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge
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FDP038AN06A0
FDI038AN06A0
O-220AB
O-262AB
67E-3
FDI038AN06A0
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67E-3
Abstract: FDI038AN06A0 FDP038AN06A0
Text: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8mΩ Features Applications • rDS ON = 3.5mΩ (Typ.), VGS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management
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FDP038AN06A0
FDI038AN06A0
O-220AB
O-262AB
67E-3
FDI038AN06A0
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67E-3
Abstract: FDI038AN06A0 FDP035AN06A0T FDP038AN06A0 DIODE N20 fdp038an06a0t
Text: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8mΩ Features Applications • rDS ON = 3.5mΩ (Typ.), VGS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management
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FDP038AN06A0
FDI038AN06A0
O-220AB
O-262AB
67E-3
FDI038AN06A0
FDP035AN06A0T
DIODE N20
fdp038an06a0t
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Untitled
Abstract: No abstract text available
Text: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8mΩ Features Applications • rDS ON = 3.5mΩ (Typ.), VGS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management
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FDP038AN06A0
FDI038AN06A0
O-220AB
O-262AB
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FDB035AN06A0
Abstract: No abstract text available
Text: FDB035AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.5mΩ Features Applications • r DS ON = 3.2mΩ (Typ.), V GS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management
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FDB035AN06A0
O-263AB
FDB035AN06A0
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67E-3
Abstract: FDB035AN06A0
Text: FDB035AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.5mΩ Features Applications • r DS ON = 3.2mΩ (Typ.), V GS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management
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Original
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FDB035AN06A0
O-263AB
67E-3
FDB035AN06A0
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Untitled
Abstract: No abstract text available
Text: FDB035AN06A0_F085 N-Channel PowerTrench MOSFET 60V, 80A, 3.5mΩ Features Applications • r DS ON = 3.2mΩ (Typ.), V GS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management
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FDB035AN06A0
O-263AB
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Untitled
Abstract: No abstract text available
Text: FDB035AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.5mΩ Features Applications • r DS ON = 3.2mΩ (Typ.), V GS = 10V, ID = 80A • Motor Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • DC-DC converters and Off-line UPS • Low Miller Charge
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FDB035AN06A0
O-263AB
153oC,
43oC/W)
FDB035AN06A0
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IBM0117800B2M
Abstract: IBM0117800P2M
Text: IBM0117800 2M x 811/10, 5.0V. IBM0117800P2M x 811/10, 3.3V, LP, SR. IBM0117800M 2M x 811/10, 5.0V, LP, SR. IBM0117800B2M x 811/10, 3.3V. IBM0117800 IBM0117800M IBM0117800B IBM0117800P 2M x 8 11/10 DRAM Features • 2,097,152 word by 8 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply
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IBM0117800
IBM0117800P2M
IBM0117800M
IBM0117800B2M
IBM0117800M
IBM0117800B
IBM0117800P
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IBM01164004M
Abstract: IBM0116400B4M IBM0116400M IBM0116400P
Text: IBM01164004M x 412/10, 5.0V. IBM0116400P 4M x 412/10, 3.3V, LP, SR. IBM0116400M 4M x 412/10, 5.0V, LP, SR. IBM0116400B4M x 412/10, 3.3V. IBM0116400 IBM0116400M IBM0116400B IBM0116400P 4M x 4 12/10 DRAM Features • 4,194,304 word by 4 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply
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IBM01164004M
IBM0116400P
IBM0116400M
IBM0116400B4M
IBM0116400
IBM0116400M
IBM0116400B
IBM0116400P
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LP 1610
Abstract: fast page mode dram controller IBM0118160B1M IBM0118160P1M
Text: IBM0118160 1M x 1610/10, 5.0V. IBM0118160P1M x 1610/10, 3.3V, LP, SR. IBM0118160M 1M x 1610/10, 5.0V, LP, SR. IBM0118160B1M x 1610/10, 3.3V. IBM0118160 IBM0118160M IBM0118160B IBM0118160P 1M x 16 10/10 DRAM Features • 1,048,576 word by 16 bit organization
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IBM0118160
IBM0118160P1M
IBM0118160M
IBM0118160B1M
IBM0118160M
IBM0118160B
IBM0118160P
LP 1610
fast page mode dram controller
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PDF
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2SK779
Abstract: 2SK794 2sk792 2SK777 2sk718 2SK775 2SK791 k796a 2SK790 2SK786
Text: Üi f m. s *± ffl € iâ m ü Y % % a . Ÿâ îÈ . K V m * % * (V) (A) s : P d /Pc h ! * * (W) ÍG S S (max) (A) Vg s (V) 6<i (min) (max) Vd s (A) (V) (A) tt ^ (13=25*0 (min) (max) Vd s (V) (V) (V) (min) (S) % ? Id (A) Vd s (V) Id (A) 2SK774 NEC SW
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2SK774
2SK775
2SK776
2SK777
2SK778
40nstyp
K796A
2SK796,
180ns,
650nstyp
2SK779
2SK794
2sk792
2sk718
2SK775
2SK791
2SK790
2SK786
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3SK164
Abstract: 3SK14 NEC 3sk21 3SK20 3sk30 3SK30A 2SK2132 3SK30A D,S,G1,G2 3SK33 LM 1011
Text: - 128 - H f m £ tt ffl « & m & vm * K V A £ Vos* m * (V) X fr * fê S l* IS P d /P c h (A) 1* (W) loss (max) (A) Vg s (V) W (Ta=25*C) 14 (min) (max) V d s (V) (V) (V) (min) (max) V d s (A) (A) (V) 9m (min) (S) { \ l f Id (A) Vd s (V) Id (A) HS SW MOS
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2SK2044
2SK2045
2SK2053
2SK2054
2SK2055
3SK16
3SK17
20nsmax.
25nsmax
3SK18
3SK164
3SK14 NEC
3sk21
3SK20
3sk30
3SK30A
2SK2132
3SK30A D,S,G1,G2
3SK33
LM 1011
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PDF
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220n5
Abstract: 2SK1273 2SK1293 hz nec 2SK1271 2SK1272 2SK1274 2SK1276 2SK1277 2SK1278
Text: - 94 - ft f =E m € tt ffl € ÎÊ m £ X it % K V m * (V) ft * 3 fe P d /P c h (A) f*t (W) Ig s s (max) (A) Vg s ÍV) (min) (A) % Î# m (max) V d s (A) (V) I* (Ta=25cC ) (min) (max) V d s (V) (V) (V) (min) (S) Id (A) Vd s (V) Id (A) 2SK1271 NEC SW, HV
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2SK1271
2SK1272
2SK1273
2SK1274
2SX1275
185ns.
350nstyp
2SK1292
220n5
2SK1293
hz nec
2SK1276
2SK1277
2SK1278
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PDF
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2SK1011
Abstract: 2sk1029 2SK1026 2SK1025 2SK1016 2SK1010 2SK1015 2sk1018 2SK1032 2SK1006
Text: f € m. % tt m € m m % it ü 3: * V* * K V * (V) ft fé i* (A) ^ *» X P d /P c h ft * (W) I gss (max) (A) Vg s (V) W Id s (min) (max) V d s (A) (V) (A) ft (Ta=25°C) 14 g (min) (max) V d s (V) (V) (V) (min) (S) Id (A) Vds (V) Id (A) SW-Reg, USP, DDC
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2SK1006
2SK1007
500/i
2SK1008
2SK1009
2SK1010
2SK1026
160ns.
280nstyp
2SK1027
2SK1011
2sk1029
2SK1026
2SK1025
2SK1016
2SK1015
2sk1018
2SK1032
2SK1006
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Untitled
Abstract: No abstract text available
Text: • * fr« 7 c 3 > * • - * > * tt T 101 -1 1 TEL 0 3 3 2 5 6 - 8 8 8 1 T532 TEL # FAX ( Æ Î B f e A I B lb : ^ ) (0 3 )3 2 56 -8 8 8 4 *» )fl*R S m æ J I|g g J S 5 -l - 3 ( f t * R ï â t ' J H (06)395-4050 FAX (06)3 9 5-4 0 7 0 S Ä S S U f fi
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OCR Scan
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95N20
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PDF
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SOUND PROCESSORS M5222L,P,FP VOLTAGE CONTROLLED AMPLIFIER VCA FOR USE IN A LOW-VOLTAGE ELECTRONIC VOLUME CONTROL DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M 5222 is a semiconductor integrated circuit consisting of a dual voltage controlled amplifier (VCA) designed for use
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OCR Scan
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M5222L
-35dB
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Untitled
Abstract: No abstract text available
Text: A < 7 V "j K /\< 7 U IC /H y b r id 7 IC s /W K l C ^ a Hp l C O i ' T /R O H M P - A 5 / \ - f 7 ' i 7 H IC l i , i f f t f c i f t f / t l S I S i i i i i i i , ¥ H y b r id 7 U «y K IC S fllC O i^ T IC s RO HM 's hybrid ICs are m ainly b a cke d by our original
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PDF
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2SK1560
Abstract: 2SK1557 2SK1558 2SK1576 2SK1555 2SK1559 2SK1571 2SK1574 2SK1556 psw inverter
Text: - 110 - f S € tfc * ffl M * ss M. £ V* * Hi K 2SK1538 A V * (V) ft * 39 à» m. fë I* P d/P ch (A) (W) I g ss (max) (A) Vg s (V) (min) (max) Vd s (A) (A) (V) (13=25*10) & W (min) (max) Vd s (V) (V) (V) 9m (min) (S) W Id (A) Vd s (V) Id (A) MOS N
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2SK1538
2SK1539
2SK1540
2SK1541
2SK1542
2SK1544
100nstyp
2SK1568
2SK1569
2SK1560
2SK1557
2SK1558
2SK1576
2SK1555
2SK1559
2SK1571
2SK1574
2SK1556
psw inverter
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PDF
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2sb504
Abstract: 2t306 2N5983 2SD588 2sd73 2sc497 HD6801V
Text: /T 1 4 R C“ 4 j r\ & M- -_ ~- i l^ it 4 4 ~\ 3 — 4 & 3 * 4 i3 !. 3: " & -\ vi- W- 4 3: - x 1 — v!r 'Hv j 4 n 3 fr 4 j •& $ 3t * 3 r^-. r+ *; 5+ x i •3I .<> iS I R k Q PS Q fit S r\ tiSE H-, 4 4 ~9> x-v r-i 5+ ' s, (vs •u- lit ZSZ\'1* n 3 St
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OCR Scan
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S029747
SS963&
2sb504
2t306
2N5983
2SD588
2sd73
2sc497
HD6801V
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LVT244A
Abstract: 74LVT 74LVT244A 74LVT244APW S020
Text: Philips Sem iconductors P roduct specification 3.3V Octal buffer/line driver 3-State 74LVT244A FEATURES DESCRIPTION • Octal bus interface The LVT244A is a high-performance BiCMOS product designed for V cc operation at 3.3V. • 3-State buffers This device is an octal buffer that is ideal for driving bus lines. The
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74LVT244A
64mA/-32mA
500mA
OT36Q-1
MO-153AC
1995Nov
LVT244A
74LVT
74LVT244A
74LVT244APW
S020
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AD7228BQ
Abstract: CZOB2 ad7228kn AD7228LN
Text: ANALOG DEVICES □ FEATURES Eight 8-Bit DACs with Output Amplifiers Operates with Single or Dual Supplies M-P Compatible 95ns W R Pulse No User Trims Required Extended Temperature Range Operation Skinny 24-Pin DIP, SOIC and 28-Terminal Surface Mount Packages
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AD7228
24-Pin
28-Terminal
AD7228
10-bit
AD7228to
085A/Z80
68008Interface
AD7228BQ
CZOB2
ad7228kn
AD7228LN
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