Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TT 95 N 1200 DIMENSION Search Results

    TT 95 N 1200 DIMENSION Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPN12006NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 20 A, 0.0120 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPN12008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    CS1200 Coilcraft Inc Current Sense Transformer, 35A, 1:200 Visit Coilcraft Inc Buy
    CS1200L Coilcraft Inc Current Sense Transformer, 35A, 1:200, ROHS COMPLIANT Visit Coilcraft Inc Buy
    HPH5-1200LD Coilcraft Inc General Purpose Inductor, 173uH, 25%, 1 Element, Ferrite-Core, SMD, ROHS COMPLIANT Visit Coilcraft Inc

    TT 95 N 1200 DIMENSION Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FS20R06XE3

    Abstract: aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd
    Text: Power Semiconductors » Short Form Catalog » 2004 A Wide Range In Short Words. An Infineon Technologies Company go to content go to content eupec eupec European Power Semiconductors and Electronics Company – is situated in Warstein and is one of the world’s leading manufacturers of Power Semiconductors


    Original     		D-59581 FS20R06XE3 aeg powerblock tt bsm25gp120 b2 thyristor aeg aeg powerblock tt 32 n STR W 6856 DATA SHEET HIGH VOLTAGE ISOLATION DZ 2101 FS450R12KE3 S1 MR 4710 IC aeg powerblock dd PDF

    FS450R12KE3 S1

    Abstract: infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120
    Text: Power Semiconductors Shortform Catalog 2003 An Infineon Technologies Company go to content eupec eupec Inc. headquartered in Lebanon, New Jersey, provides a wide array of innovative semiconductor products, includinge IGBT high power and standard modules, thyristors and diodes.


    Original     		E-103, FS450R12KE3 S1 infineon pmb 6850 e bsm25gp120 b2 HIGH VOLTAGE ISOLATION DZ 2101 infineon pmb 6850 Thyristor eupec POWERBLOCK 2SD 1460 pmb 6850 V61-14 BSM35GP120 PDF

    116UM152M050TT

    Abstract: 116XM332M050TT 116YM472M050TT
    Text: AT C 116 SERIES MICROCAPS Termination Area L T W T depends upon capacitance value. ATC 116 SERIES MICROCAP® – The116 series SLC with a conventional straight-sided design offers the highest capacitance per outline size. This design allows the user to match line width or design a custom capacitor for limited circuit dimensions.


    Original     		The116 116UM152M050TT 116XM332M050TT 116YM472M050TT PDF

    FS300R12OE4P

    Abstract: FS450R12OE4P FP06R12W1T4 F3L400R12PT4 bt 1690 scr fp150r07n3e4 F3L300R12PT4 Eupec thyristors catalog FF150R12RT4 Dz800S17ke3
    Text: Short Form Catalog 2012 High Power Semiconductors for Industrial Applications www.infineon.com/highpower Auch mit dem KuKa Kurzkatalog 2012 bieten wir Ihnen wieder einen Überblick über dieses Spektrum mit vielen Details. Durch ständigen Dialog mit unseren Kunden haben wir auch in


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N8028-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •          RoHS Compliant 1200 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		1N8028-GA Mil-PRF-19500 1N8028 74E-13 68E-5 15E-09 00E-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N8028-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •          RoHS Compliant 1200 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		1N8028-GA Mil-PRF-19500 1N8028 74E-13 68E-5 15E-09 00E-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N8028-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •          RoHS Compliant 1200 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		1N8028-GA Mil-PRF-19500 1N8028 74E-13 68E-5 15E-09 00E-10 00E-03 PDF

    95006 dscc

    Abstract: No abstract text available
    Text: gh Reliability High Reliability rfaceSurface MountMount Resistor Resistor High Reliability Approved Surface Mount Resistor • DSCC Approved Series MCHP Series nt surge capability · Excellent surge capability e Metal Glaze technology MCHP Series · Reliable


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Resistors General-Purpose Failsafe General-Purpose Failsafe Moulded Wirewound Resistors Moulded Wirewound Resistors Make Possible Welwyn Components SP20 / SP20F Series SP20/SP20F Series SP20F UL1412 recognised fusing replacement for*BW20/BW20F • Drop-in


    Original     		SP20F SP20/SP20F UL1412 BW20/BW20F BW20F SP20F 4000/reel PDF

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet High Temperature Silicon Carbide Power Schottky Diode GB20SHT12-CAL VRRM o IF @ 25 C QC = = = 1200 V 30 A 58 nC Features •        1200 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge


    Original     		GB20SHT12-CAL Mil-PRF-19500 GB20SHT12 74E-13 68E-5 15E-09 00E-10 00E-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: Die Datasheet High Temperature Silicon Carbide Power Schottky Diode GB20SHT12-CAU VRRM o IF @ 25 C QC = = = 1200 V 30 A 58 nC Features •        1200 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge


    Original     		GB20SHT12-CAU Mil-PRF-19500 GB20SHT12 74E-13 68E-5 15E-09 00E-10 00E-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: General-Purpose Failsafe General-Purpose Failsafe Moulded Moulded Wirewound WirewoundResistors Resistors Welwyn Components SP20 / SP20F Series SP20/SP20F Series SP20F UL1412 recognised fusing * 0.1 ohm to 1200 ohms for BW20/BW20F replacement • Drop-in F version has


    Original     		SP20F SP20/SP20F UL1412 BW20/BW20F 1/2BW20 BW20F SP20F 4000/reel PDF

    Untitled

    Abstract: No abstract text available
    Text: NTT92B Naina Semiconductor Ltd. Thyristor-Thyristor Module, 95 Amps Features • • • • Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Voltage Ratings TA = 25oC, unless otherwise noted


    Original     		NTT92B PDF

    siemens matsushita hf

    Abstract: 4.7B2 b6474 B25839-J6474 B25839-B6224-M B25839-B6105-K J647 IEC 68-1 B25839B KMC SERIES CAPACITORS
    Text: MKV AC Capacitors Coupling, Damping B 25 839 Surge-proof High insulation resistance High rate of voltage rise permitted Low dissipation factor Also suitable for general-purpose applications K LK O 081-P Construction • Self-healing • Plastic dielectric


    OCR Scan     		fi53SbOS HF/700V B25839-B6105-K KLK1035-C 235b05 Q074700 siemens matsushita hf 4.7B2 b6474 B25839-J6474 B25839-B6224-M B25839-B6105-K J647 IEC 68-1 B25839B KMC SERIES CAPACITORS PDF

    Untitled

    Abstract: No abstract text available
    Text: Bipolar transistors-2SA series Package dimensions The following illustrations show the package dimensions and the associated land pattern for each package. 2 0 ± 0 .2 1.3 t 0.1 04*01 0 65 0.65 0 £2 — D. os ' U <>$ <=>$ <3>tt : • *ir JL. I |° - 3 r g ; .


    OCR Scan     		PDF

    GI 312 diode

    Abstract: bridge RECTIFIER GI IGBT 50 amp 1000 volt vqe 23 MHPM7B16A120B MHPM7A15S120DC3 5SC3 2a1012
    Text: MOTOROLA Order this documenti by MHPM7B16A120B/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module Integrated Power Stage for 3.0 hp Motor Drives M H PM 7B 16A 120B This device is not recommended for new designs (This device is replaced by MHPM7A15S120DC3)


    OCR Scan     		MHPM7B16A120B/D MHPM7A15S120DC3) D10D313 GI 312 diode bridge RECTIFIER GI IGBT 50 amp 1000 volt vqe 23 MHPM7B16A120B MHPM7A15S120DC3 5SC3 2a1012 PDF

    Untitled

    Abstract: No abstract text available
    Text: Q r * CHANGZHOU PN H U AW EI E L E C T R O N IC S C O .,L T D . CD135M W#Sta,KTJ-RTii.85-C 2000/jMtf High ripple current .Size may be selected .Load life of 2000 hours at 85"C. Used large power source, converter circuit .etc. Specifications J @ Item i t 14


    OCR Scan     		CD135M 2000/jMtf 60V-450 120Hz) PDF

    diode SKN molybdenum

    Abstract: No abstract text available
    Text: s e m ik r d n Section 15: SEMICELL Power Semiconductor Chips The following tables contain our standard types. Other types or selections are available on special request. Please contact your SEMIKRON office. SEMICELL® Rectifier Diode Chips , T^ es $ Y s k n 3


    OCR Scan     		GMCL03 GMCL04 CD47E405 GMCL06 fll3bb71 diode SKN molybdenum PDF

    KT 382

    Abstract: pdaat powerex ks powerex kt KT 783
    Text: POü ÉREX INC 'ìlD D • TaTMLEÍToOQlñTi T Thyristor Assemblies-Air Cooled Device Assembly Module Typ« PTA6T620_15 _20 _30 PTA6T62S_25 _30 _ 40 PTA7T720 _35 _45 _55 PTA7T7S0_55 _65 _75 PTA9T9G0_ 08 _10 _ 12


    OCR Scan     		PTA6T620_ PTA6T62S_ PTA7T720 PTAATA20_ KT 382 pdaat powerex ks powerex kt KT 783 PDF

    4270A

    Abstract: No abstract text available
    Text: 4 270-A Valve — S ta n d a rd Valves 4270-A V A LV E T R IO D E . PLATE I SPEC IFIC A T IO N . Cathode. Thoriated Tun gste n filament. C o n sta n t voltage type. Dimensions. 17 17" 43 cms. O verall length 4- MAX. M axim u m diam eter 4 " (10-2 cms.) N e t w eigh t


    OCR Scan     		270-A 270-A 4270A PDF

    NE25337

    Abstract: KR sot-143 NE25339 marking X_j sot u79 018
    Text: N E C / NEC L4574m 1SE D CALIFORNIA DGOlbSÔ 5 GENERAL PURPOSE DUAL-GATE GaAs MESFET FEATURES NE25337 NE25339 OUTLINE DIMENSIONS umtsmmm O U T LIN E 37 • SUITABLE FOR USE AS RF AMPLIFIER AND MIXER IN UHF APPLICATIONS • LOW C r s s : 0.02 pF (TYP) • HIGH Gps : 20 dB (TYP)


    OCR Scan     		NE25337 NE25339 NE253 b4E7414 NE25337, Rn/50 KR sot-143 NE25339 marking X_j sot u79 018 PDF

    Untitled

    Abstract: No abstract text available
    Text: RST/RSI U ltra m in ia tu re Plug-In TVansformers and In d u cto rs TRANSFORMERS Matching Impedance Pri Sac Max DC Ma Unbal In Prl DCR ± 2 5 tt Prl Sac Over­ all Tumt Ratio Max Power* level MW at 300Hz Connactlon Fig. NOTES RST-09 10K C T 10K C T 1 .0 100 0


    OCR Scan     		300Hz RST-09 RST-11 RST-17 RST-18 RST-24 RST-31 RST-46 RSI-01 RSI-02 PDF

    1N5329

    Abstract: in5247 zener diode in5287 IN5226 in5231 in5242 1N3237 Z401 IN5222 IN5230
    Text: dF J b m s ^ es 3459325 ODOOIST s | ~ FAGOR E L E C T R O N I C S 98D FAGOR 00159 1N5221 1NS257 r ~ u ~ n ¿0.5 W Zener Diodes Dimensions in mm. inches Voltage 2.4 to 33 V. Power to i ? S s O.SW (0149) 38 s 1 61 (awi) Mounting instructions 1. Min. distance from body to soldering point,


    OCR Scan     		1N5221 1NS257 DO-35 DO-35 1N5249 1N5250 1N5251 1N5252 1NS253 1N5254 1N5329 in5247 zener diode in5287 IN5226 in5231 in5242 1N3237 Z401 IN5222 IN5230 PDF

    Untitled

    Abstract: No abstract text available
    Text: Netz-Dioden-Module Rectifier diode modules Modules à diodes pour applications réseau Typ Vrrm Type V rs m = Ifrmsm Vrrm + / i 2dt Ifsm V TO Ifavm^ c rT Rthjc tv, max RthCK Maßbild Outline 100 V 10 m s, 10 m s, tv ,= tvj max t/j max W t» ,= tvj max sin


    OCR Scan     		PDF