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    TT 600 F 1200 Search Results

    TT 600 F 1200 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    XPN12006NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 20 A, 0.0120 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPN12008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 26 A, 0.0123 Ohm@10V, TSON Advance Visit Toshiba Electronic Devices & Storage Corporation
    POE600F-33LB Coilcraft Inc SMPS Transformer Visit Coilcraft Inc
    POE600F-12LB Coilcraft Inc SMPS Transformer Visit Coilcraft Inc
    POE600F-24L Coilcraft Inc PoE transformer, SMT, RoHS Visit Coilcraft Inc

    TT 600 F 1200 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    powerblock dd 82 S 800

    Abstract: thyristor tt 121 powerblock thyristor DATASHEET diode S 335 TT 46 powerblock dd thyristor thyristor modules thyristor TT 46
    Text: Fast Powerblock Modules Fast Diode Modules VRRM = 400 800 Fast Thyristor Modules 1200 1600 2000 2400 VRRM = 200 600 1000 1400 TT 46 F DD 46 S TT 71 F DD 61 S TT 81 F DD 62 S TT 101 F DD 81 S TT 111 F DD 82 S TT 180 F DD 121 S TT 200 F DD 122 S TZ 285 S DD 230 S


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    powerblock dd 82 S 800

    Abstract: powerblock dd TT 46 tt200f
    Text: Fast Powerblock Modules Fast Diodes VRRM = 400 800 1200 1600 2000 2400 Fast Thyristors V RRM = 200 DD 46 S TT 46 F DD 61 S TT 71 F DD 62 S TT 81 F DD 81 S TT 101 F DD 82 S TT 111 F DD 121 S TT 180 F DD 122 S TT 200 F DD 230 S TZ 285 S DD 241 S TZ 335 F DD 242 S


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    S24LCA20

    Abstract: L41C s20lc20u 547B S20FND10 S20FND12 S20FNK02 S20FNK04 S20FNK06 S20FNK08
    Text: - M m « tt « PRSM Vr s m kW (V) AË V M (V) Vr V| Io (V) (V) (A) (A) I Vpmax I fsm (°C) m -% [5] f t tiÈ m Æ IS] f t f i té (°C) (V) 14 1- * Rtnax I F (A) T C O ( ß A) V r (V) T(°C) fife © ft ti ^ í ! r> ') & y H 'y y 1000 1200 200 400 600


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    PDF S20FND10 S20FND12 S20FNK02 S20FNK04 21tkT-r/i-i-iY S20FNK06 S20FNK08 S40FFA01 S40FFA02 S40FFA04 S24LCA20 L41C s20lc20u 547B S20FND10 S20FND12 S20FNK04 S20FNK06 S20FNK08

    D6K40

    Abstract: D4LA20 DFA05C D10LC20U D5L60 D6K20 D6K20H D6K20R D6K20RH D6K40R
    Text: -51 £ tt % DFB20TG DFB20TJ DFB20TL DFC05J DFC05L V (A) lo . I f * (V ) (A) I fsh & 15 R (V ) (A) (°C> * u m (V) I F (A) T ( °C ) (w A ) Vr (V) T ( °C ) 0.98 1.5 1. 2 1. 2 1. 2 4 5 6 6 6 25 j 10 10 10 10 10 200 600 200 200 200 25 j 1. 2 1.2 1.2 1. 5


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    PDF D4LA20 D5L60 D6K20 300ns D6K20H 100ns D6K20R 300ns D6K20RH D6K40 DFA05C D10LC20U D5L60 D6K20RH D6K40R

    10M60

    Abstract: 10M15 10M10 10EF2 10M50 10ELS1 10ELS2 10ELS4 10ELS6 10KF10
    Text: - 38 - A 1& £ m [Si # is & m æ |SJ # tt * ffi £ £ Vrsm Vrrm Vr IFH Tfc# V (V) (V) (A) (°C) Io,If * (A) CC> IF S M T&f* Vpmax (A) (°C) (V) «DJîËfctt I f (A) TTC) Igmax * fife ^ ffi ( ü A) V r (V) T(°C) 10 10 10 10 10 200 100 20 0 40 0 600 7 ’')y


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    PDF 10EF2 200ns 10ELS1 150ns 10ELS2 10ELS4 10ELS6 10M60 10M15 10M10 10EF2 10M50 10KF10

    siemens igbt BSM 300

    Abstract: siemens igbt BSM 200 GA 120 NC4000
    Text: ta□ E D • SIEMENS ÖEBSbOS GDMSTEfl T2T ISIE6 SIEMENS AKTIENGESELLSCHAF -r -3 9 -^ 5 BSM 300 GA 120 D IGBT Module Preliminary Data VCE = 1200 V = 400 A at Tc = 25 C = 300 A at 80 'C Ic Ic Tc = • Power module • Single switch • Including fast free-wheel diodes


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    PDF C67076-A2007-A2 siemens igbt BSM 300 siemens igbt BSM 200 GA 120 NC4000

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSM 25 GD 120 D IGBT Module Preliminary Data VCE = 1200 V / c = 6 x 35 A at r c = 25 "C J c = 6 x 2 5 A at Tc = 80 C • Power module • 3-phase full bridge • Including fast free-wheel diodes • Package with insulated metal base plate • Package outlines/Circuit diagram: 31


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    PDF VM30517- C67076-A2505-A2 SII00226

    siemens igbt BSM 200 GA 120

    Abstract: No abstract text available
    Text: SIEMENS BSM 200 GA 120 D IGBT Module Prelim inary D ata V CE = 1200 V / c = 275 A at Tc = 25 C / c = 200 A at T c = 80 C • • • • • Power m odule Single switch Including fast free-wheel diodes Package with insulated metal base plate Package outlines/C ircuit diagram : 41'


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    PDF C67076-A2006-A2 siemens igbt BSM 200 GA 120

    siemens igbt BSM 200 GA 120

    Abstract: siemens igbt BSM 300 siemens igbt BSM 200 GA 100 siemens igbt BSM 100
    Text: bDE T> m 023SbQ5 GG4SCU E 5b2 « S I E G SIEMENS S X E K N S AKTIENSESELLSCHAF 7 IGBT Module Preliminary Data ^ ? - ^ 5 " BSM 200G A120D VCE = 1200 V / C = 275 A at Tc= 25 C / c =200 A at r c = 80 C • • • • • Power module Single switch Including fast free-wheel diodes


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    PDF 0235fc GG4SC11E C67076-A2006-A2 siemens igbt BSM 200 GA 120 siemens igbt BSM 300 siemens igbt BSM 200 GA 100 siemens igbt BSM 100

    BSM25GB120D

    Abstract: C160 SC10 siemens igbt BSM 150 Gb 160 d SIEMENS ks
    Text: LOE D • 0235bG5 QOMSÛ1L 2 2 ? « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF '7 ^ 3 3 - 0 7 BSM 25 GB 120 D BSM 25 G AL 120 D IGBT Module Preliminary Data VCE = 1200 V = 2 x 35 A at r c = 2 5 C = 2 x 2 5 A at r o = 8 0 'C Ic Ic • Power module • 3-phase full bridge


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    PDF 0235bG5 C67076-A2109-A2 C67076-A2009-A2 S23SbDS DGMSfi22 BSM25GB120D C160 SC10 siemens igbt BSM 150 Gb 160 d SIEMENS ks

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSM 50 GB 120 D BSM 50 GAL 120 D IGBT Module Preliminary Data V CE = 1200 V J c = 2 x 70 A at r c = 2 5 C / c = 2 x 50 A at T c = 80 C • • • • • Power module H alf-bridge/Chopper Including fast free-w heel diodes Package with insulated m etal base plate


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    PDF C67076-A2105-A2 C67076-A2010-A2

    siemens ha 8000

    Abstract: BSM 214 A siemens igbt BSM 50 gb 100 d 235L C160 siemens igbt BSM 50 gb 120 d
    Text: bGE D • ôS3SbDS 0QM5ÔMÛ Ö37 ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF T ’ Z d r C IGBT Module Preliminary Data ft BSM50GB120D BSM50GAL120D = V CE 1200 V / c = 2 x 70 A at T c = 25 C / c = 2 x 50 A at 80 C Tc = • • • • • Power module H alf-bridge/Chopper


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    PDF C67076-A2105-A2 C67076-A2010-A2 siemens ha 8000 BSM 214 A siemens igbt BSM 50 gb 100 d 235L C160 siemens igbt BSM 50 gb 120 d

    siemens igbt BSM 50 gb 120 d

    Abstract: No abstract text available
    Text: SIEMENS IGBT Module Preliminary Data BSM 75 GB 120 D BSM 75 GAL 120 D VCE = 1200 V / c = 2 x 100 A at Tc = 25 "C I c = 2 x 75 A at Tc = 80 C • • • • • Power module Half-bridge/Chopper Including fast free-wheel diodes Package with insulated metal base plate


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    PDF C67076-A2106-A2 C67076-A2011-A2 siemens igbt BSM 50 gb 120 d

    BSM15GD120D

    Abstract: No abstract text available
    Text: SIEMENS B SM 15 G D 120 D IG B T Module Preliminary Data VCE = 1200 V I c = 6 x 25 A at Tc = 25 "C I c = 6 x 1 5 A at r o = 80" C • Power module • 3-phase full bridge • Including fast free-wheel diodes • Package with insulated metal base plate • Package outlines/Circuit diagram: 31’


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    PDF C67076-A2504-A2 BSM15GD120D

    SAA 1350

    Abstract: DD40F-120 DD40F-140 DD40F-160 DD40F-20 DD40F-40 DD40F-60 DD50GB40L DD50GB40M DD50GB60L
    Text: - 122- 4t m % Pr s m Vr s m fé * V M Vr m is isa m Vpmax I fsm & * •e V rc> (A) (/a A) V r (V) T C C ) 1200 1400 1600 200 400 40 40 40 40 40 96c 96c 96c 96c 96c 1200 1200 1200 1200 1200 25 j 25 j 25 j 25 j 25 j 1. 40 1.4 0 1. 40 1. 40 1.4 0 120 120


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    PDF DD40F-120 DD40F-140 DD40F-160 DD40F-20 DD40F-40 DD40F-60 DD40F-B0 DD90F-40 DD90F-60 ddsof-80 SAA 1350 DD40F-60 DD50GB40L DD50GB40M DD50GB60L

    Untitled

    Abstract: No abstract text available
    Text: =1001381 * 0002213 3Û0 SYNERGY 8- b it s h i f t r e g i s t e r sy-ioos34i S E M IC O N D U C T O R FEATURES • ■ Max. shift frequency of 600MHz ■ Max. Clock to Q delay of 1200ps ■ Iee min. o f-150m A ■ ESD protection of 2000V ■ Industry standard 100K ECL levels


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    PDF sy-ioos34i 600MHz 1200ps f-150m SY100S341 TD013A1 000221b SY100S341 D24-1

    siemens igbt BSM 150 gb 100 d

    Abstract: BSM100GB120D siemens igbt
    Text: bDE D • 023Sb05 OOMSÔÛO 122 ■ S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ' 7 <23 o ’^ ” BSM 100 GB 120 D BSM 100 GAL 120 D IGBT Module Preliminary Data VCE = 1200 V I c = 2 x 1 3 5 A at r c = 25 'C / c = 2 x 1 0 0 A at r c = 80 C • • • • •


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    PDF 235ti05 2x135 2x100 C67076-A2107-A2 C67076-A2012-A2 siemens igbt BSM 150 gb 100 d BSM100GB120D siemens igbt

    BSM25GD120D

    Abstract: No abstract text available
    Text: bGE » ûaaSbGS 0045032 47T « S I E G • SIEMENS SIEMENS AKTIENGESELLSCHAF - 9 7 BSM 25 GD 120 D IGBT Module Preliminary Data V CE = 1200 V / c = 6 x 35 A at Tc = 25 C I c = 6 x 25 A at Tc = 80 C • • • • • Power m odule 3-phase full bridge Including fast free-wheel diodes


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    PDF C67076-A2505-A2 sii00219 sii00220 BSM25GD120D

    285-25

    Abstract: DD40F-160 DD40F-120 DD40F-140 DD40F-20 DD40F-40 DD40F-60 DD50GB40L DD50GB40M DD50GB60L
    Text: - 122- 4t m % Pr s m Vr s m fé * V M Vr V] m is isa m & * & n lo Vpm ax I fsm I Rtnax m •e o m m tt ^ m ÍV V) rc> (A ) I f (A) t (/a A ) V r (V ) D D 4 0 F — 1 20 DD40F-140 DD40F-160 DD40F-20 DD40F-40 130 0 150 0 1700 240 4 80 1200 1400 1600


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    PDF DD40F-120 DD40F-140 DD40F-160 DD40F-20 DD40F-40 DD40F-60 DD40F-B0 DD90F-40 DD90F-60 ddsof-80 285-25 DD40F-60 DD50GB40L DD50GB40M DD50GB60L

    7MBR15NF120

    Abstract: AC2500 T100 DC-AC Power Inverter schematic collmer igbt IT0-22
    Text: FUJI S î d i l G B T ^ ftH U fc ^ 7 : ! — JU t e r N U - > rN y 'J- X j 7 m b r i5 n f i2 0 X j 1200V/15A/PIM •4$& : Features High Speed Switching "/ ?■ > ? •«ESE» Voltage Drive • fc - r ^ y ? * > * i s? a - j v m t Low Inductance Module Structure


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    PDF J-Xj7MBRI5nfi20 200V/15A/PIM A95/A95) 7MBR15NF120 AC2500 T100 DC-AC Power Inverter schematic collmer igbt IT0-22

    DFD05TR

    Abstract: DFC15TN DFC15TR DFD05TB DFD05TC DFD05TE DFD05TG DFD05TJ DFD05TL DFD05TN
    Text: Vrkm V 1 20 140 140 140 140 70 70 70 60 150 150 j 150 j 150 j m TCC) m$ I f (A) 1200 1500 100 200 1000 1200 400 600 800 1500 1700 100 200 400 600 800 1000 1000 1200 1000 1200 800 100 200 100 200 400 600 800 400 1000 600 800 600 800 i , 1 TCC) trr<300ns trr<300ns


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    PDF DFC15TN 300ns DFC15TR DFD05TB 150ns DFD05TC DFD05TE DFD05TR DFC15TN DFD05TC DFD05TG DFD05TJ DFD05TL DFD05TN

    DFF50B12

    Abstract: DFF20B12 DFD05TR DFG1C8 DFC15TN DFC15TR DFD05TB DFD05TC DFD05TE DFF50B
    Text: Vrkm V 1 20 140 140 140 140 70 70 70 60 150 150 j 150 j 150 j m TCC) m$ I f (A) 1200 1500 100 200 1000 1200 400 600 800 1500 1700 100 200 400 600 800 1000 1000 1200 1000 1200 800 100 200 100 200 400 600 800 400 1000 600 800 600 800 i , 1 TCC) trr<300ns trr<300ns


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    PDF DFC15TN 300ns DFC15TR DFD05TB 150ns DFD05TC DFD05TE DFF50B12 DFF20B12 DFD05TR DFG1C8 DFC15TN DFD05TC DFF50B

    IGBT Module BSM150GB120D

    Abstract: siemens igbt BSM 150 gb 100 d siemens igbt BSM 150 Gb 160 d BSM 15 GB GAL 700 BSM150GB120D siemens igbt BSM 100 gb siemens igbt BSM 50 gb 100 d aa-es siemens
    Text: bOE D • flEBSLGS OOMSâ^b S^T « S I E G SIEMENS SIEMENS AKTIENGESELLSCHAF ^ IGBT Module Preliminary Data 3 - 0 9 BSM150GB120D BSM 150 GAL 120 D V CE = 1200 V I c = 2 X 200 A at Tc = 25 C I c = 2 x 1 5 0 A at r c = 8 0 C • • • • • Power m odule


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    PDF BSM150GB120D 2x150 C67076-A2108-A2 C67076-A2013-A2 sii00202 IGBT Module BSM150GB120D siemens igbt BSM 150 gb 100 d siemens igbt BSM 150 Gb 160 d BSM 15 GB GAL 700 BSM150GB120D siemens igbt BSM 100 gb siemens igbt BSM 50 gb 100 d aa-es siemens

    DFD30TE

    Abstract: DFD05TR DFF20B12 DFC15TN DFC15TR DFD05TB DFD05TC DFD05TE DFD05TG DFD05TJ
    Text: Vrkm V 1 20 140 140 140 140 70 70 70 60 150 150 j 150 j 150 j m TCC) m$ I f (A) 1200 1500 100 200 1000 1200 400 600 800 1500 1700 100 200 400 600 800 1000 1000 1200 1000 1200 800 100 200 100 200 400 600 800 400 1000 600 800 600 800 i , 1 TCC) trr<300ns trr<300ns


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    PDF DFC15TN 300ns DFC15TR DFD05TB 150ns DFD05TC DFD05TE DFD30TE DFD05TR DFF20B12 DFC15TN DFD05TC DFD05TG DFD05TJ