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    TT 40N Search Results

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    TT 40N Price and Stock

    Littelfuse Inc IXTT40N50L2

    MOSFET N-CH 500V 40A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTT40N50L2 Tube 298 1
    • 1 $18.8
    • 10 $18.8
    • 100 $12.43433
    • 1000 $18.8
    • 10000 $18.8
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    Newark IXTT40N50L2 Bulk 300
    • 1 -
    • 10 -
    • 100 -
    • 1000 $12.78
    • 10000 $12.78
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    Littelfuse Inc IXTT40N50L2-TRL

    MOSFET N-CH 500V 40A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTT40N50L2-TRL Reel 400
    • 1 -
    • 10 -
    • 100 -
    • 1000 $12.1905
    • 10000 $12.1905
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    Newark IXTT40N50L2-TRL Reel 400
    • 1 -
    • 10 -
    • 100 -
    • 1000 $12.58
    • 10000 $11.61
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    IXYS Corporation IXTT40N50L2

    MOSFETs 40 Amps 500V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTT40N50L2 862
    • 1 $20.68
    • 10 $20.68
    • 100 $15.63
    • 1000 $14.04
    • 10000 $14.04
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    TTI IXTT40N50L2 Tube 210 30
    • 1 -
    • 10 -
    • 100 $16.26
    • 1000 $14.28
    • 10000 $14.28
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    TME IXTT40N50L2 1
    • 1 $22.05
    • 10 $17.64
    • 100 $15.77
    • 1000 $15.77
    • 10000 $15.77
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    IXYS Corporation IXTT140N10P

    MOSFETs 140 Amps 100V 0.011 Rds
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IXTT140N10P 381
    • 1 $8.19
    • 10 $8.19
    • 100 $6.53
    • 1000 $6.05
    • 10000 $6.05
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    Infineon Technologies AG TT340N22KOFXPSA1

    Thyristor Modules Y
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TT340N22KOFXPSA1 6
    • 1 $247.99
    • 10 $247.99
    • 100 $227.41
    • 1000 $227.41
    • 10000 $227.41
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    Find more TT 40N price and stock on Findchips.com

    TT 40N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PA107DP

    Abstract: No abstract text available
    Text: PA107DP PA107DP P r oo PA107DP dd uu cc tt TI en cnhonvoaltoi go yn FF rr oomm Power Operational Amplifiers FEATURES GENERAL DESCRIPTION The PA107DP is a state of the art wideband high power operational amplifier designed to drive resistive, capacitive or inductive loads. For optimum linearity the


    Original     		PDF PA107DP PA107DP PA107DPU

    256Mbyte DDR SDRAM with 64bit data bus

    Abstract: PC133 133Mhz cl3 ELPIDA ECT-TS-0198 hitachi part numbering DDR266B DDR200 DDR266A hitachi part "numbering" RDRAM
    Text: Hitachi & NEC DRAM Part Numbering System Elpida Memory, Inc. 2000, 2001 ECT-TS-0198 December 13, 2001 1. Hitachi DRAM Component Parts Numbering System e.g. 256Mbit SDRAM HM 52 25 40 5 B L TT 1) (2) (3) (4) (5) (6)(7) (8) (1)Hitachi IC Memory A6 (9) (2)Product Family


    Original     		PDF ECT-TS-0198 256Mbit 64Mbit, 128Mbit, 256Mbit, 512Mbit 64MByte 96MByte 128MByte 192MByte 256Mbyte DDR SDRAM with 64bit data bus PC133 133Mhz cl3 ELPIDA hitachi part numbering DDR266B DDR200 DDR266A hitachi part "numbering" RDRAM

    Untitled

    Abstract: No abstract text available
    Text: Power F-MOS FET 2SK806 2SK806 Silicon N-channel Power F'MOS FET Package Dimensions •Features • Low ON resistance RDS on : Rds (on) = 1.8il (typ.) • High switching rate ; tt = 40ns (typ.) • No secondary breakdown Unit: mm • High breakdown voltage


    OCR Scan     		PDF 2SK806 O-220

    2SJ512

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ512 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE tt-MOSV 2SJ512 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 r • Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SJ512 -250V) 2SJ512

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SJ512 TOSHIBA FIELD EFFECT TRANSISTOR i SILICON P CHANNEL MOS TYPE tt-M O SV <MT; Vi Vm i INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 + 0.3


    OCR Scan     		PDF 2SJ512

    2SK981

    Abstract: 2SK981A
    Text: P o w e r F-MOS FET 2SK981, 2SK 981A 2SK981, 2SK981A Silicon N-channel Power F-MOS FET P ackage Dim ensions • Features • Low ON resistan ce R Ds on : RDs (on) = 2. Oil (typ.) Unit: mm • High sw itching ra te : tt = 40ns (typ.) 3.7m ax 7.3max. • No secondary breakdow n


    OCR Scan     		PDF 2SK981, 2SK981A 2SK981 2SK981A G017121

    HZK201

    Abstract: if5g PJ 900 HZF36 HZK11L HZK12 HZK12L HZK15 HZK16L HZK18
    Text: - y m & tt £ P mW HZF36 HZK2 HZK2LL HZK3 HZK3LL nu HZK41L HZK5 HZK5LL HZK6 HZK6L HZK7 HZK7L HZK9 HZK9L HZKll HZK11L HZK12 HZK12L HZK15 HZK151 HZJÜ6 HZK16L HZK18 HZK18L HZK20 HZK20L HZK22 HZK22L HZK24 HZK24L HZK27 HZK27L HZK30 HZK30L HZK33 HZK33L HZK36


    OCR Scan     		PDF HZF36 HZK33 HZK33L HZK36 HZK36L g40ms-e 40ms-à HZK201 if5g PJ 900 HZK11L HZK12 HZK12L HZK15 HZK16L HZK18

    HZF36

    Abstract: HZK11L HZK12 HZK12L HZK15 HZK16L HZK18 HZK18L HZK20 HZK201
    Text: - y m & tt £ P mW HZF36 HZK2 HZK2LL HZK3 HZK3LL nu HZK41L HZK5 HZK5LL HZK6 HZK6L HZK7 HZK7L HZK9 HZK9L HZKll HZK11L HZK12 HZK12L HZK15 HZK151 HZJÜ6 HZK16L HZK18 HZK18L HZK20 HZK20L HZK22 HZK22L HZK24 HZK24L HZK27 HZK27L HZK30 HZK30L HZK33 HZK33L HZK36


    OCR Scan     		PDF HZF36 HZK11L HZK12 HZK12L HZK15 HZK16L HZK18 HZK18L HZK20 HZK201

    k1365

    Abstract: No abstract text available
    Text: TOSHIBA 2SK1365 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSII .5 2 S K 1 365 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING PO W ER SUPPLY APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 5 .8 ± 0 .5 | • Low Drain-Source ONResistance


    OCR Scan     		PDF 2SK1365 300/uA k1365

    Untitled

    Abstract: No abstract text available
    Text: 2 « tt HS-65758RH HS-65759RH HARRIS S E M IC ON DU CTOR Radiation Hardened 32K x 8 SOI CMOS Static RAM PRELIMINARY July 1992 Features Pinouts • 0.8 Micron Radiation Hardened SOI CMOS - Total Dose 1 x 10s RAD Si - Transient Upset 1 x 1011 RAD (Siys


    OCR Scan     		PDF HS-65758RH HS-65759RH HS1-65758RH 1-800-4-HARRIS

    dual TMB 1800

    Abstract: chopper trans 60NS MOSFET 50 amp 1000 volt MOSFET RF P-channel VHF low noise dual P-Channel JFET
    Text: N T E ELE CTRONICS INC SSE D bMaiSST 000Sb2S TMb BIN TE T -tt-O l DWER MOS Fi Gatato Source Cutott Voltage Volta Gate to Source Breakdown Voltage (Volt») Maximum Continuous Drain Currant (Amp*) BVosa ±20 Max >D ros(On) 12 0.18 Max case Styl« Di»g. Number


    OCR Scan     		PDF 000Sb2S NTE2381) T0220 250pA dual TMB 1800 chopper trans 60NS MOSFET 50 amp 1000 volt MOSFET RF P-channel VHF low noise dual P-Channel JFET

    odv marking

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2607 TOSHIBA FIELD EFFECT TRANSISTOR SILICON IM CHANNEL MOS TYPE tt-MOSIII 2SK26Q7 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS


    OCR Scan     		PDF 2SK2607 2SK26Q7 odv marking

    MTM13N50E

    Abstract: MTM13N50 40N20 MOSFET IRF250 TM12P10 55n10 mtm6n80 15N20 MTM7N50 mtm15n40e
    Text: TT TMOS TMOS Power MOSFETs Metal Packages — TO-204AA/AE 0 40" 060" TO-204AA CASE 1-07 Table 6 — P-Channel Voss Volts Min 100 RDS(on) ID (Ohms) (Amps) Max TO-204AE CASE 197A-03 Table 7 — N-Channel Device •d (cont) Amps Pd * (Watts) Max VDSS (Volts)


    OCR Scan     		PDF O-204AA/AE O-204AA O-204AE 97A-03 TM12P10 TM20P10 MTM6N100E MTM6N80E IRF440 IRF450 MTM13N50E MTM13N50 40N20 MOSFET IRF250 55n10 mtm6n80 15N20 MTM7N50 mtm15n40e

    UFT125

    Abstract: UFT12505 UFT12510 UFT12515 UFT12620 UFT12630 UFT12640 UFT12650 UFT12760 UFT12770
    Text: Ultrafast Recovery Modules UFT125. 126 & 127 ¥ Baseplate A=Common Anode ti Baseplate Common Cathode u — *"1 1 1 / T É i - 'r 1 °-N—i—N-o W ic Baseplate D=Doubler TT Notes: — I V [E \ ! Dim. Inches A Min. Max. — 3.630 0.800 0.630 0.130 0.510 B 0.700


    OCR Scan     		PDF UFT125, UFT125 UFT12505 UFT12510 UFT12515 UFT12620 UFT12630 UFT12640 UFT12650 UFT12760 UFT12770

    epap 420

    Abstract: BP3303
    Text: BP3303/BP3304 BP3303/BP3304 BP3303/BP3304 IJ, * > 7 v 7 $ < TJl>, h r-r„ A > K t ^h, * - # - m z ftta tz tc tt-? * Multifunction Telephone Sets BP3303 and BP3304 are telephone units with abbrevi­ ated dialing, onhook dialing and holding with melody. You can complete a telephoneset only by adding hand­


    OCR Scan     		PDF BP3303/BP3304 BP3303/BP3304 BP3303 BP3304 25--39pin) 200mVP- ffl777 470pF 39pin) epap 420

    Untitled

    Abstract: No abstract text available
    Text: “HYUNDAI HY51V4810B Series 5 1 2 K x 8 -b tt CM O S DRAM w it h W r it e - P e r - B it PRELIMINARY DESCRIPTION The HY51V4810B is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51V4810B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V4810B HY51V4810B 1AC20-00-MAY94 HY51V4810BJC HY51V4810BSUC HY51V4810BTC

    6 pin pulse transformer 4503 circuit diagram

    Abstract: l0534 HCPL 601 motor IG 2200 19 x 00 15 r ADC60-08 L4562 BD transistor smd Optocoupler 601 8 pin smd l0631 l0601
    Text: Optocoupler Preference Guide . • • • • * *•••* ••• • • •. . * • • • * ’• Agilent Technologies •• ? *. Innovating the HP Way Introducing A g ile n t Technologies, the result of H e w le tt-P a c k a rd 's stra te g ic re a lig n m e n t of its


    OCR Scan     		PDF PTION060 6 pin pulse transformer 4503 circuit diagram l0534 HCPL 601 motor IG 2200 19 x 00 15 r ADC60-08 L4562 BD transistor smd Optocoupler 601 8 pin smd l0631 l0601

    BI 370

    Abstract: 2SK1878 LM9005 2501L 2SK1852 2SK1853 2SK1859 2SK1862 2SK1863 BA 5810
    Text: - 124 - f £ tt % ffl & m S m * ê JV K V m * (V) * * M 3 & 1 * (A) * P d /P c h Ig s s (max) (W) (A) Vg s (V) (min) (max) Vos (A) (A) (V) fó Í# 1*È (Ta=25‘ C) (min) (V) (max) Vos (V) (V) (min) (S) Id (A) Vd s (V) % ? Id (A) 2SK1852 NEC SW.Motor-D


    OCR Scan     		PDF 2SK1852 2SK1853 2SK1859 2SK1862 2SK1863 1116B 2SK1911 130ns, 370nstyp 2SK1918 BI 370 2SK1878 LM9005 2501L BA 5810

    FHX04FA

    Abstract: 3SK71 FHR10X 3SK38 FHR01FH FHX05FA 3SK38A NEC 2501L 4AK15 4AK17
    Text: - 130 - ft f m % tt m m € * 1 % K V* V, m * * tit /E Vg s * E % * (V (A) « » * P d /P c h (W) S (Ta=25,C ) 14 . Ig s s (max) (A) Vg s (V) (min) (max) Vd s (V) (V) (V) (min) (max) Vd s (A) (A) (V) c (min) (typ) Vd s (S) (s) (V) Id (A) Id (A) Chop


    OCR Scan     		PDF 3SK38 3SK38A 3SK71 4AK15 4AK16 4AK17 60/115nstyp 2SK971/2SJ173 6AM13 CXD7500M FHX04FA FHR10X 3SK38 FHR01FH FHX05FA NEC 2501L

    H 9311

    Abstract: r519 HZM10N HZM11N HZM12N HZM13N HZM15N HZM18N HZM20N HZM22N
    Text: - 234- x t« H ffí £ tt £ P iW (»A) siin typ nax Iz(mA) (Q ) ln S J. Ite j » ji p tm Zzkinax Zzraax Vz (V) Iz L. A r it m iz Iz (mA) (Q ) Vz ÉD * IR 'JAt n m m Iz(mA) (%/°C) Umax ik ft * ffe © # ft m ( ß A) Vr (V) B HZM3.6N HZM3.9N HZM4 3N HZM4.7N


    OCR Scan     		PDF 40msT' ig40nisT-fllJ; 40nis-rflJS. S40ms-e 40llsT- H 9311 r519 HZM10N HZM11N HZM12N HZM13N HZM15N HZM18N HZM20N HZM22N

    2SJ18

    Abstract: 2SJ174 HA 1350S 2S1189 2S119 2sj196 mos-mcs 2SJ170 2SJ171 2SJ172
    Text: - 22 - m % ft € m & m ss f t t % * K V ± * ft Ê (V) ft * tt ft (A) P d /P c h (W) Ig s s (max) (A) Vg s (V) % M (min) (max) Vd s (A) (V) (A) ft t*È (Ta=25‘ C) (min) (max) V d s (V) (V) (V) Id (A) (min) (S) Vds (V) Id (A) 2SJ170 0 * SW-Reg, DDC MOS


    OCR Scan     		PDF 2SJ170 2SJ171 2SJ172 2SJ173 2SJ174 M-30V 2SJ191 210nstyp 2SJ192 2SJ193 2SJ18 HA 1350S 2S1189 2S119 2sj196 mos-mcs

    2SK779

    Abstract: 2SK794 2sk792 2SK777 2sk718 2SK775 2SK791 k796a 2SK790 2SK786
    Text: Üi f m. s *± ffl € iâ m ü Y % % a . Ÿâ îÈ . K V m * % * (V) (A) s : P d /Pc h ! * * (W) ÍG S S (max) (A) Vg s (V) 6<i (min) (max) Vd s (A) (V) (A) tt ^ (13=25*0 (min) (max) Vd s (V) (V) (V) (min) (S) % ? Id (A) Vd s (V) Id (A) 2SK774 NEC SW


    OCR Scan     		PDF 2SK774 2SK775 2SK776 2SK777 2SK778 40nstyp K796A 2SK796, 180ns, 650nstyp 2SK779 2SK794 2sk792 2sk718 2SK775 2SK791 2SK790 2SK786

    2SK839

    Abstract: K818A K809A 2SK834 2SK828 2SK813 2SK814 2SK817 S09A 2SK810
    Text: - 70 - ito Hi M tt m € & m m 1 5e! V * S ?£ P d /P c h m * K A (V) * (A) * (W) Ig s s (max) (A) Vg s (V) te % (rain) (max) V d s (A) (A) (V) (min) (V) (Ta=25?C) (max) V d s (V) (V) (min) (S) Id (A) Vd s (V) Id (A) 2SK805 DDC, Motor-D MOS N E 200 DSS


    OCR Scan     		PDF 2SK805 2SK806 2SK807 2SK808 2SK809, 175nstyp 2SK826 2SK827 165nstyp 2SK839 K818A K809A 2SK834 2SK828 2SK813 2SK814 2SK817 S09A 2SK810

    H 9311

    Abstract: r519 HZM10N HZM11N HZM12N HZM13N HZM15N HZM18N HZM20N HZM22N
    Text: - 234- x t« H ffí £ tt £ P iW (»A) siin typ nax Iz(mA) ( Q) ln S J. Ite j » ji p tm Zzkinax Zzraax Vz (V) Iz L. A r it m iz Iz (mA) (Q ) Vz ÉD * IR 'JAt nm m Iz(mA) (%/°C) Umax ik ft * ffe © # ft m ( ß A) Vr (V) B HZM3.6N HZM3.9N HZM4 3N HZM4.7N


    OCR Scan     		PDF 40msT' ig40nisT-fllJ; 40nis-rflJS. aSfS40iHsT S40ms-e 40llsT- H 9311 r519 HZM10N HZM11N HZM12N HZM13N HZM15N HZM18N HZM20N HZM22N