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    TSSOP8 PACKAGE K410 Search Results

    TSSOP8 PACKAGE K410 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    TSSOP8 PACKAGE K410 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: LM158W-LM258W-LM358W Low power dual operational amplifiers Datasheet −production data Features • ESD internal protection: 2 kV ■ Internally frequency-compensated ■ Large DC voltage gain: 100 dB ■ Wide bandwidth unity gain : 1.1 MHz (temperature compensated)


    Original     		PDF LM158W-LM258W-LM358W

    K418

    Abstract: k415 TSSOP8 Package k410 3M Philippines
    Text: LM158W LM258W LM358W Low power dual operational amplifiers Datasheet − production data Features • ESD internal protection: 2 kV ■ Frequency compensation implemented internally ■ Large DC voltage gain: 100 dB ■ Wide bandwidth unity gain : 1.1 MHz


    Original     		PDF LM158W LM258W LM358W K418 k415 TSSOP8 Package k410 3M Philippines

    Untitled

    Abstract: No abstract text available
    Text: LM158W-LM258W-LM358W Low power dual operational amplifiers Datasheet −production data Features • ESD internal protection: 2 kV ■ Internally frequency-compensated ■ Large DC voltage gain: 100 dB ■ Wide bandwidth unity gain : 1.1 MHz (temperature compensated)


    Original     		PDF LM158W-LM258W-LM358W

    TSSOP8 Package k410

    Abstract: No abstract text available
    Text: LM158W, LM258W, LM358W Low power dual operational amplifiers Datasheet - production data Features • ESD internal protection: 2 kV • Internal frequency compensation implemented • Large DC voltage gain: 100 dB N DIP8 Plastic package • Wide bandwidth (unity gain): 1.1 MHz


    Original     		PDF LM158W, LM258W, LM358W DocID9159 TSSOP8 Package k410

    transistor k413

    Abstract: 258WY k414 K411 k412 k415 K-412 MSO8 LM258WYST TSSOP8 Package k410
    Text: LM158W-LM258W-LM358W Low power dual operational amplifiers Features • ESD internal protection: 2 kV ■ Internally frequency-compensated ■ Large DC voltage gain: 100 dB ■ Wide bandwidth unity gain : 1.1 MHz (temperature compensated) ■ Very low supply current per operator


    Original     		PDF LM158W-LM258W-LM358W transistor k413 258WY k414 K411 k412 k415 K-412 MSO8 LM258WYST TSSOP8 Package k410

    LM258Y-LM358Y

    Abstract: 258WY AW 32 k413 diode LM158W-LM258W-LM358W
    Text: LM158W-LM258W-LM358W Low power dual operational amplifiers Features • Internally frequency compensated ■ Large DC voltage gain: 100 dB ■ Wide bandwidth unity gain : 1.1 MHz (temperature compensated) ■ Very low supply current/op (500 µA) essentially


    Original     		PDF LM158W-LM258W-LM358W LM258Y-LM358Y 258WY AW 32 k413 diode LM158W-LM258W-LM358W

    transistor k413

    Abstract: K411 q001 TSSOP-8 K413 LM258AWYPT LM158W LM258W LM358AW LM358W LM258WY-LM358WY
    Text: LM158W-LM258W-LM358W Low power dual operational amplifiers Features • Internally frequency compensated ■ Large DC voltage gain: 100 dB ■ Wide bandwidth unity gain : 1.1 MHz (temperature compensated) ■ Very low supply current per operator essentially independent of supply voltage


    Original     		PDF LM158W-LM258W-LM358W transistor k413 K411 q001 TSSOP-8 K413 LM258AWYPT LM158W LM258W LM358AW LM358W LM258WY-LM358WY

    258WY

    Abstract: K411 ic k411 q001 LM258AWYPT marking Q001 TSSOP8 Package k410 LM158W LM258W LM358AW
    Text: LM158W-LM258W-LM358W Low power dual operational amplifiers Features • Internally frequency compensated ■ Large DC voltage gain: 100 dB ■ Wide bandwidth unity gain : 1.1 MHz (temperature compensated) ■ Very low supply current per operator essentially independent of supply voltage


    Original     		PDF LM158W-LM258W-LM358W 258WY K411 ic k411 q001 LM258AWYPT marking Q001 TSSOP8 Package k410 LM158W LM258W LM358AW

    LM2904AYD

    Abstract: 2904Y lm2904n LM2904AYDT 2904AY LM2904 LM2904A K403 k-410 K409
    Text: LM2904 Low power dual operational amplifier Features • Internally frequency-compensated ■ Large DC voltage gain: 100 dB ■ Wide bandwidth unity gain : 1.1 MHz (temperature compensated) ■ Very low supply current/op (500 µA) essentially independent of supply voltage


    Original     		PDF LM2904 LM2904AYD 2904Y lm2904n LM2904AYDT 2904AY LM2904 LM2904A K403 k-410 K409