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    AM29F016D-120

    Abstract: AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13
    Text: Am29F016D 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm


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    Am29F016D Am29F016 Am29F016B AM29F016D-120 AM29F016D-150 AM29F016D-70 AM29F016D-90 SA10 SA11 SA12 SA13 PDF

    am29f400bb

    Abstract: am29f400bb v am29f400 known good AM29F400B7 am29f400b 20185 AM29F400BT
    Text: Am29F400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations — Minimizes system level requirements


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    Am29F400B 8-Bit/256 16-Bit) Am29F400 am29f400bb am29f400bb v am29f400 known good AM29F400B7 20185 AM29F400BT PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Am29LV200 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications


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    Am29LV200 8-Bit/128 16-Bit) PDF

    Untitled

    Abstract: No abstract text available
    Text: Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optimized for memory card applications — Backwards-compatible with the Am29F016C ■ 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements


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    Am29F017B Am29F016C 20-year 40-pin 48-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: A M D tl Am29DL800B 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from


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    Am29DL800B 8-Bit/512 16-Bit) Am29DL800 FBB048. PDF

    AM29F100T

    Abstract: No abstract text available
    Text: HNA: AMDB Am29F100 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 V + 10% for read, erase, and program operations — Simplifies system-level power requirements


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    Am29F100 8-bit/64 16-bit) AM29F100T PDF

    Am29DL400BT

    Abstract: No abstract text available
    Text: MiN AR AMDZ1 Am29DL400B 4 Megabit 512 K x 8-Blt/2S6 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations Sector protection — Host system can program or erase in one bank,


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    Am29DL400B 16-Bit) 44-Pin 16-038-S044-2 Am29DL400BT PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY AMDZ1 Am29LV081 B 8 Megabit 1 M x 8-Bit CMOS 3.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Optim ized architecture for Miniature Card and mass storage applications ■ Single power supply operation — 2.7 to 3.6 volt read and w rite operations for


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    Am29LV081 PDF

    24SA27

    Abstract: AM29F017B
    Text: AM D Ì1 A m 2 9 F 0 1 7 B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optim ized for m em ory card applications ■ Minim um 1,000,000 program /erase cycles per sector guaranteed ■ 20-year data retention at 125 C


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    29F016C 29F017B 24SA27 AM29F017B PDF

    29f1008

    Abstract: 29f100
    Text: FINAL AMDB Am29F100 1 Megabit 128 K x 8-bit/64 K x 16-bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 5.0 V ± 10% for read, erase, and program operations — Embedded Erase algorithm autom atically


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    Am29F100 8-bit/64 16-bit) 29F100 29f1008 29f100 PDF

    29LV641

    Abstract: 29LV640D
    Text: A D V A N C E IN F O R M A T IO N AMDil Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • ■ Single power supply operation Compatibility with JEDEC standards


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    Am29LV640DU/Am29LV641 16-Bit) 48-pin 56-pin Am29LV640DU/Am 29LV641 TSR048-- 16-038-TS48 TSR048 29LV640D PDF

    amd 29F400AB

    Abstract: 29F400AT 29F400AB
    Text: PR E L IM IN A R Y Am29F400AT/Am29F400AB 4 Megabit 524,288 x S-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory AdVMi“ o Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements


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    Am29F400AT/Am29F400AB S-Bit/262 16-Bit) 44-pin 48-pin Am29F400AT/Am 29F400AB Am29F400T/Am29F400B 18612B. amd 29F400AB 29F400AT 29F400AB PDF

    Untitled

    Abstract: No abstract text available
    Text: ' Pt: LiP,MI i AR AMD* Am29F200A 2 Megabit 256 K x 8-Bit/128 K x 16-Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ High performance


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    Am29F200A 8-Bit/128 16-Bit) PDF

    am29f400bb

    Abstract: No abstract text available
    Text: 'RH .v'IKMF AM Dii Am29F400B 4 Megabit (512 K x 8-Bit/256 K x 16-Bit dMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 vott-only operation for read, erase, and program operations — Minimizes system level requirements


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    Am29F400B 8-Bit/256 16-Bit) Am29F400 am29f400bb PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION A M D ii Am29LV020B 2 Megabit 256 K x 8-Bit CMOS 3.0 Volt-only, Uniform Sector 32-Pin Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications


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    Am29LV020B 32-Pin 29LV020B-55 29LV020B-70 29LV020B-90 29LV020B-120 PDF

    Untitled

    Abstract: No abstract text available
    Text: FIN A L Am29F200T/Am29F200B AdvaM T£ 2 Megabit 262,144 x 8-BII/131.072 x 16-Blt CMOS 5.0 Volt-only, Sector Erase Flash Memory Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements


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    Am29F200T/Am29F200B 8-BII/131 16-Blt) 44-pin 48-pin Am29F200 PDF

    am29f400b

    Abstract: am29f400bb 22AB AM29F400BT
    Text: AMDZ1 P R E L IM IN A R Y Am29F400B 4 Megabit 512 K X 8-Bit/256 K x 16-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 volt-only operation for read, erase, and program operations ■ Top or bottom boot block configurations


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    Am29F400B 8-Bit/256 16-Bit) Am29F400 am29f400bb 22AB AM29F400BT PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY — Am29F200AT/Am29F200AB A M D £I 2 Megabit 262,144 x 8-Bit/131,072 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements


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    Am29F200AT/Am29F200AB 44-pin 48-pin PDF

    Untitled

    Abstract: No abstract text available
    Text: PR ELIM IN ARY AMDZ1 Am29SL800C 8 Megabit 1 M x 8-Bit/512 K x 16-Bit CMOS 1.8 Volt-only Super Low Voltage Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 1.8 to 2.2 V for read, program, and erase operations Top or bottom boot block configurations


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    Am29SL800C 8-Bit/512 16-Bit) 29SL800B 29SL800C FGB048â 48-Ball 16-038-FG PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY A M Dii Am29LV400B 4 Megabit 512 K X 8-Bit/256 K X 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 2.7 to 3.6 volt read and w rite operations for battery-powered applications


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    Am29LV400B 8-Bit/256 16-Bit) Am29LV400 PDF

    29DL400BT-70

    Abstract: No abstract text available
    Text: PRELIMINARY AMDil Am29DL400B 4 Megabit 512 K x 8-Bit/256 K x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations ■ Sector protection — Host system can program or erase in one bank,


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    Am29DL400B 8-Bit/256 16-Bit) 29DL400BT-70 PDF

    29lv641

    Abstract: No abstract text available
    Text: AMD£I ADVANCE INFORMATION Am29LV640DU/Am29LV641 DU 64 Megabit 4 M x 16-Bit CMOS 3.0 Volt-only Uniform Sector Flash Memory with Versatilel/O Control DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — 2.7 to 3.6 volt read, erase, and program operations


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    Am29LV640DU/Am29LV641 16-Bit) 48-pin 56-pin Am29LV640DU/Am 29LV641 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION AMD Am29LV400B 4 Megabit 512 K X 8-Bit/256 K X 16-Bit CMOS 3.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation ■ — Full voltage range: 2.7 to 3.6 volt read and write operations for battery-powered applications


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    Am29LV400B 8-Bit/256 16-Bit) Am29LV400BT70R Am29LV400BB70R Am29LV400BT80 Am29LV400BB80 Am29LV400BT90 Am29LV400BB90 Am29LV400BT120 PDF

    Untitled

    Abstract: No abstract text available
    Text: PR ELIM IN ARY AM D il Am29F017B 16 Megabit 2 M x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Optim ized for m em ory card applications ■ — Backwards-com patible with the Am 29F016C ■ 5.0 V ± 10%, single power supply operation


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    Am29F017B 29F016C 29F017B AM29F017B PDF