plx 9030
Abstract: FOOTPRINTS CONNECTOR ssop-4 footprint plcc 208 plx 9030 176-pin pqfp PLCC pin configuration FOOTPRINTS CONNECTOR 2 PIN 14 pin plcc socket footprint soic 20 pci connector footprint plx 9030 data sheet
Text: PCI 9030RDK–LITE PCI SMARTarget Rapid Development Kit Features •A PCI v2.2 prototype adapter board design based on the PLX PCI 9030 SMARTarget I/O Accelerator ■ Surface mount footprints on the board support industry standard embedded CPUs, DSPs, FPGAs, CPLDs and
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9030RDK
100-pin
9030RDK-LITE
9030/LITE-RDK-PB-P1-2
plx 9030
FOOTPRINTS CONNECTOR ssop-4
footprint plcc 208
plx 9030 176-pin pqfp
PLCC pin configuration
FOOTPRINTS CONNECTOR 2 PIN
14 pin plcc socket
footprint soic 20
pci connector footprint
plx 9030 data sheet
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plx 9030
Abstract: 9030RDK-LITE plx 9030 data sheet 20-PIN 44-PIN 48-PIN 54-PIN 9030-AA60BI FOOTPRINTS CONNECTOR 2 PIN TSOP 54 PIN
Text: CompactPCI 9030RDK-LITE CompactPCI SMARTarget Rapid Development Kit Features • PICMG 2.0 r2.1 Compact PCI Compliant Rapid Development Kit based on the PLX PCI 9030 SMARTarget I/O Accelerator ■ CompactPCI Hot Swap Ready 3U or 6U installable ■ Surface
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9030RDK-LITE
25x25
100-pin
9030g
9030/LITE-RDK-PB-P1-2
plx 9030
9030RDK-LITE
plx 9030 data sheet
20-PIN
44-PIN
48-PIN
54-PIN
9030-AA60BI
FOOTPRINTS CONNECTOR 2 PIN
TSOP 54 PIN
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BIOS 29EE020
Abstract: 29ee020 29EE010 "silicon storage technology" superflash superflash sst bios 28sf040 SST28SF040 SST29EE512 SST29LE010
Text: 1 2 3 4 Silicon Storage Technology, Inc. 5 6 7 Flash Memory Data Book 1998 8 9 10 11 12 13 14 Silicon Storage Technology, Inc. 1171 Sonora Court Sunnyvale, CA 94086 15 Tel: 408 735-9110 Fax: (408) 735-9036 16 Web site: www.ssti.com or www.SuperFlash.com
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M25P08
Abstract: MD2800-D08 pmc flash pm49fl004t-33jc MD2810-D08 m25p04 SDTB-128 MD2811-D32-V3 M25P08-V-MN-6-T Sandisk TSOP EPROM databook am27c256 120
Text: SST Base Memory Cross Reference Table Silicon Storage Technology, Inc. Density Voltage Organized as x8/ x16 SST AMD ST Microelectronics Atmel Intel Winbond Flash 512K 5V 8 SST39SF512; SST29EE512 AM28F512 M29F512 AT49F512, AT29C512 - W29EE512 1M 5V 8 SST39SF010; SST29EE010
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SST39SF512;
SST29EE512
AM28F512
M29F512
AT49F512,
AT29C512
W29EE512
SST39SF010;
SST29EE010
AM29F010,
M25P08
MD2800-D08
pmc flash pm49fl004t-33jc
MD2810-D08
m25p04
SDTB-128
MD2811-D32-V3
M25P08-V-MN-6-T
Sandisk TSOP
EPROM databook am27c256 120
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Hitachi DSA002746
Abstract: No abstract text available
Text: HM628512B Series 4 M SRAM 512-kword x 8-bit ADE-203-903B (Z) Rev. 1.0 Jan. 13, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology.
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HM628512B
512-kword
ADE-203-903B
525-mil
400-mil
600-mil
Hitachi DSA002746
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HM628512B
Abstract: HM628512BLFP-5 HM628512BLFP-5SL HM628512BLFP-7 HM628512BLFP-7SL HM628512BLP-5 HM628512BLP-5SL HM628512BLP-7 HM628512BLP-7SL Hitachi DSA00197
Text: HM628512B Series 4 M SRAM 512-kword x 8-bit ADE-203-903 (Z) Preliminary Rev. 0.0 Apr. 24, 1998 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The
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HM628512B
512-kword
ADE-203-903
525-mil
400-mil
600-mil
HM628512BLFP-5
HM628512BLFP-5SL
HM628512BLFP-7
HM628512BLFP-7SL
HM628512BLP-5
HM628512BLP-5SL
HM628512BLP-7
HM628512BLP-7SL
Hitachi DSA00197
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70241k
Abstract: d5611 61c256 ic 9022 61c64 RELIABILITY REPORT ISSI vacuum tubes CMS 2015 S/TRANSISTOR J 5804 EQUIVALENT 28F010P
Text: ISSI Integrated Silicon Solution, Inc. Quality and Reliability 1997-1998 An ISO 9001 Company ISSI ® Reliability Report 1997-1998 An ISO 9001 Company 1997 Integrated Silicon Solution, Inc. Integrated Silicon Solution, Inc. • 2231 Lawson Lane • Santa Clara, CA 95054
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R-118
70241k
d5611
61c256
ic 9022
61c64
RELIABILITY REPORT ISSI
vacuum tubes
CMS 2015
S/TRANSISTOR J 5804 EQUIVALENT
28F010P
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HM628512B
Abstract: HM628512BLFP-5 HM628512BLFP-7 HM628512BLP-5 HM628512BLP-5SL HM628512BLP-5UL HM628512BLP-7 HM628512BLP-7SL HM628512BLP-7UL
Text: a HM628512B Series 4 M SRAM 512-kword x 8-bit ADE-203-903D (Z) Rev. 3.0 Aug. 24, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The
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HM628512B
512-kword
ADE-203-903D
525-mil
400-mil
600-mil
HM628512BLFP-5
HM628512BLFP-7
HM628512BLP-5
HM628512BLP-5SL
HM628512BLP-5UL
HM628512BLP-7
HM628512BLP-7SL
HM628512BLP-7UL
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c9013
Abstract: 84 pin PBGA oscilloscope MTBF TSMC retention memory dc 8069 IS61C1024 IC Data-book Q-16 car radio 14x20 TSOP 8638
Text: ISSI Integrated Silicon Solution, Inc. Quality and Reliability 1997-1998 An ISO 9001 Company ISSI ® Quality System Manual QUALITY Reliabilty Report 1997-1998 RELIABILITY Integrated Silicon Solution, Inc. An ISO 9001 Company 1997 Integrated Silicon Solution, Inc.
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R-118
c9013
84 pin PBGA
oscilloscope MTBF
TSMC retention memory
dc 8069
IS61C1024
IC Data-book
Q-16
car radio 14x20
TSOP 8638
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Hitachi DSA00101
Abstract: HM628512B HM628512BLFP-5 HM628512BLFP-7 HM628512BLP-5 HM628512BLP-5SL HM628512BLP-5UL HM628512BLP-7 HM628512BLP-7SL HM628512BLP-7UL
Text: HM628512B Series 4 M SRAM 512-kword x 8-bit ADE-203-903D (Z) Rev. 3.0 Aug. 24, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword × 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 µm Hi-CMOS process technology. The
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HM628512B
512-kword
ADE-203-903D
525-mil
400-mil
600-mil
Hitachi DSA00101
HM628512BLFP-5
HM628512BLFP-7
HM628512BLP-5
HM628512BLP-5SL
HM628512BLP-5UL
HM628512BLP-7
HM628512BLP-7SL
HM628512BLP-7UL
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32-PIN
Abstract: A103 A114 A115 SST27SF010 CE 315 SST27SF010 DIP
Text: 1 Megabit 128K x 8 SuperFlash MTP SST27SF010 Preliminary Specifications FEATURES: • 5.0-Volt Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: Minimum 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)
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SST27SF010
SST27SF010
32-LEAD
MS-016
32-PIN
A103
A114
A115
CE 315
SST27SF010 DIP
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mtp 27SF020
Abstract: 27SF020 27VF020 32-PIN SST27SF020 SST27VF020 SST27XF020 27SF020 70
Text: 2 Megabit 256K x 8 SuperFlash MTP SST27SF020, SST27VF020 Preliminary Specifications FEATURES: • 5.0-Volt Read Operation for 27SF020 • 2.7-Volt Read Operation for 27VF020 • Superior Reliability – Endurance: Minimum 1000 Cycles – Greater than 100 years Data Retention
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SST27SF020,
SST27VF020
27SF020
27VF020
27SF020
32-LEAD
MS-016
mtp 27SF020
27VF020
32-PIN
SST27SF020
SST27VF020
SST27XF020
27SF020 70
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27sf010
Abstract: 32-PIN SST27SF010 SST27VF010 27SF01070 27SF010-70
Text: 1 Megabit 128K x 8 SuperFlash MTP SST27SF010, SST27VF010 Preliminary Specifications FEATURES: • 5.0-Volt Read Operation for 27SF010 • 2.7-Volt Read Operation for 27VF010 • Superior Reliability – Endurance: Minimum 1000 Cycles – Greater than 100 years Data Retention
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SST27SF010,
SST27VF010
27SF010
27VF010
27SF010
32-LEAD
MS-016
32-PIN
SST27SF010
SST27VF010
27SF01070
27SF010-70
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TMS87C510
Abstract: TL16CFM405 sn10448 TL16CFM405PH tl16cfm504pjm tms87c110 tl16cfm TCM78808FN TL16CRK600 tms29f256fm
Text: TEXAS INSTRUMENTS Informational Change of Moisture Sensitivity Caution Labels to Comply with EIA/JEP113-A Standard January 21, 1997 Abstract Texas Instruments is changing the moisture sensitivity caution labels used on all dry packaged product to comply with the industry standard EIA/JEP113-A. The new labels allow product factory
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EIA/JEP113-A
EIA/JEP113-A.
TMS87C510
TL16CFM405
sn10448
TL16CFM405PH
tl16cfm504pjm
tms87c110
tl16cfm
TCM78808FN
TL16CRK600
tms29f256fm
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oasis
Abstract: 32-PIN A103 A114 A115 SST27SF020 90-3C-PH 2t926
Text: 2 Megabit 256K x 8 SuperFlash MTP SST27SF020 Preliminary Specifications FEATURES: • 5.0V Read Operation (4.5V to 5.5V) • Superior Reliability – Endurance: At least 1000 Cycles – Greater than 100 years Data Retention • Low Power Consumption – Active Current: 20 mA (typical)
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SST27SF020
SST27SF020
oasis
32-PIN
A103
A114
A115
90-3C-PH
2t926
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27SF020
Abstract: mtp 27SF020 27VF020 SST27XF020 27SF020 70 32-PIN SST27SF020 SST27VF020 eeprom 27sf020 12v/mtp 27SF020
Text: 2 Megabit 256K x 8 SuperFlash MTP SST27SF020, SST27VF020 Preliminary Specifications FEATURES: • 5.0-Volt Read Operation for 27SF020 • 2.7-Volt Read Operation for 27VF020 • Superior Reliability – Endurance: Minimum 1000 Cycles – Greater than 100 years Data Retention
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SST27SF020,
SST27VF020
27SF020
27VF020
27SF020
120-3C-EH
SST27SF020-
120-3C-NH
mtp 27SF020
27VF020
SST27XF020
27SF020 70
32-PIN
SST27SF020
SST27VF020
eeprom 27sf020
12v/mtp 27SF020
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27SF010
Abstract: 27sf010-70 32-PIN SST27SF010 SST27VF010 27VF010
Text: 1 Megabit 128K x 8 SuperFlash MTP SST27SF010, SST27VF010 Preliminary Specifications FEATURES: • 5.0-Volt Read Operation for 27SF010 • 2.7-Volt Read Operation for 27VF010 • Superior Reliability – Endurance: Minimum 1000 Cycles – Greater than 100 years Data Retention
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SST27SF010,
SST27VF010
27SF010
27VF010
27SF010
SF010-
70-3C-PH
SST27SF010-
90-3C-PH
27sf010-70
32-PIN
SST27SF010
SST27VF010
27VF010
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Untitled
Abstract: No abstract text available
Text: DENSE-PAC 1280 Megabit CMOS DRAM MICROSYSTEMS DPD32MS40PKW5 PRELIMINARY D ESCRIPTIO N : The DPD32MS40PKW5 is the 32 Meg x 40 Dynamic RAM module in the family of S u p e r S IM M modules that utilize the new and innovative space saving TSOP stacking technology. The module is constructed of twentyfour dynamic RAM stacks,
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DPD32MS40PKW5
DPD32MS40PKW5
72-pin
100ns
3QA153-01
30A153
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Untitled
Abstract: No abstract text available
Text: HM628512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-903 (Z) Preliminary, Rev. 0.0 April 24, 1998 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 (Am Hi-CMOS process technology.
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HM628512B
512-kword
ADE-203-903
525-mil
400-mil
600-mil
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Untitled
Abstract: No abstract text available
Text: HM628512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-903B (Z) Rev. 1.0 Jan. 13, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 ( A m Hi-CMOS process technology.
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HM628512B
512-kword
ADE-203-903B
525-mil
400-mil
600-mil
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HM628512BLP-5SL
Abstract: A17a DP-32 HM628512B HM628512BLFP-5 HM628512BLFP-7 HM628512BLP-5 HM628512BLP-7 HM628512BLP-7SL HM628512BLTT7
Text: HM628512B Series 4 M SRAM 512-kword x 8-bit HITACHI ADE-203-903B (Z) Rev. 1.0 Jan. 13, 1999 Description The Hitachi HM628512B is a 4-Mbit static RAM organized 512-kword x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.35 (Am Hi-CMOS process technology.
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HM628512B
512-kword
ADE-203-903B
525-mil
400-mil
600-mil
HM628512BLP-5SL
A17a
DP-32
HM628512BLFP-5
HM628512BLFP-7
HM628512BLP-5
HM628512BLP-7
HM628512BLP-7SL
HM628512BLTT7
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Untitled
Abstract: No abstract text available
Text: HN58V1001 Series Preliminary 131,072-word x 8-bit Electrically Erasable and Programmable CMOS ROM The Hitachi HN58V1001 is a electically erasable and p rogram m able EEPROM organized as 131072-word x 8-bit. It realizes high speed, low power consumption, and a high level of reliability,
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HN58V1001
072-word
131072-word
128-byte
HN58V1001P-25
32-pin
DP-32)
HN58V1001FP-25
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Untitled
Abstract: No abstract text available
Text: 256 Kilobit 32K x 8 SuperFlash MTP SST27SF256 Prelim inary Specifications FEATURES: • • 5.0V Read Operation (4.5V to 5.5V) • Does Not Require UV Source Chip Erase Time: 100 ms • TTL I/O Compatibility Low Power Consumption • JEDEC Standard Byte-wide EPROM Pinouts
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SST27SF256
28-Pin
32-Pin
SST27SF256_
S-016
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EZ 923
Abstract: V907
Text: DATA SHEET NEC / / MOS INTEGRATED CIRCUIT jjPD42S16800L, 4216800L, 42S17800L, 4217800L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 2 M-WORD BY 8-BIT, FAST PAGE MODE Description The /iPD42S16800L, 4216800L, 42S17800L, 4217800L are 2,097,152 words by 8 bits CMOS dynamic RAMs. The
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uPD42S16800L
uPD4216800L
uPD42S17800L
uPD4217800L
/iPD42S16800L,
4216800L,
42S17800L,
4217800L
pPD42S16800L,
42S17800L
EZ 923
V907
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