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    TSOP 56 PACKAGE Search Results

    TSOP 56 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    TSOP 56 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TSOP 56 Package

    Abstract: 56-Pin
    Text: THIN SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 56 PIN PLASTIC FPT-56P-M02 56-pin plastic TSOP I Lead pitch 0.50 mm Lead shape Gullwing Lead bend direction Reverse bend Sealing method Plastic mold (FPT-56P-M02) 56-pin plastic TSOP (I)


    Original     		PDF FPT-56P-M02 56-pin FPT-56P-M02) 008INDEX F56002S-3C-3 TSOP 56 Package

    9806

    Abstract: diode 9806 FPT-56P-M01
    Text: THIN SMALL OUTLINE L-LEADED PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 56 PIN PLASTIC FPT-56P-M01 56-pin plastic TSOP I Lead pitch 0.50 mm Lead shape Gullwing Lead bend direction Normal bend Sealing method Plastic mold (FPT-56P-M01) 56-pin plastic TSOP (I)


    Original     		PDF FPT-56P-M01 56-pin FPT-56P-M01) F56001S-3C-4 9806 diode 9806 FPT-56P-M01

    MX23L256

    Abstract: No abstract text available
    Text: MX23L25610 256M-BIT 16M x 16 / 32M x 8 MASK ROM WITH PAGE MODE (TSOP ONLY) FEATURES • Current - Operating: 30mA (max.) @ 5MHz - Standby: 15uA (max.) • Supply voltage - 3.0V ~ 3.6V • Package - 56 pin TSOP • Temperature - 0~70°C • Bit organization


    Original     		PDF MX23L25610 256M-BIT 100ns FEB/04/2002 NOV/22/2002 APR/03/2003 APR/24/2003 MAY/08/2003 JUN/06/2003 PM0873 MX23L256

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX23L25610 256M-BIT 16M x 16 / 32M x 8 MASK ROM WITH PAGE MODE (TSOP ONLY) FEATURES • Current - Operating: 30mA (max.) @ 5MHz - Standby: 15uA (max.) • Supply voltage - 3.0V ~ 3.6V • Package - 56 pin TSOP • Temperature - 0~70°C • Bit organization


    Original     		PDF MX23L25610 256M-BIT 100ns D126V FEB/04/2002 NOV/22/2002 PM0873

    Untitled

    Abstract: No abstract text available
    Text: MX23L25610 256M-BIT 16M x 16 / 32M x 8 MASK ROM WITH PAGE MODE (TSOP ONLY) FEATURES • Current - Operating: 30mA (max.) @ 5MHz - Standby: 15uA (max.) • Supply voltage - 3.0V ~ 3.6V • Package - 56 pin TSOP • Temperature - 0~70°C • Bit organization


    Original     		PDF MX23L25610 256M-BIT 100ns FEB/04/2002 NOV/22/2002 APR/03/2003 PM0873

    Untitled

    Abstract: No abstract text available
    Text: MX23L25610 256M-BIT 16M x 16 / 32M x 8 MASK ROM WITH PAGE MODE (TSOP ONLY) FEATURES • Current - Operating: 30mA (max.) @ 5MHz - Standby: 15uA (max.) • Supply voltage - 3.0V ~ 3.6V • Package - 56 pin TSOP • Temperature - 0~70°C • Bit organization


    Original     		PDF MX23L25610 256M-BIT 100ns FEB/04/2002 NOV/22/2002 APR/03/2003 APR/24/2003 PM0873

    Untitled

    Abstract: No abstract text available
    Text: MX23L25610 256M-BIT 16M x 16 / 32M x 8 MASK ROM WITH PAGE MODE (TSOP ONLY) FEATURES • Current - Operating: 30mA (max.) @ 5MHz - Standby: 15uA (max.) • Supply voltage - 3.0V ~ 3.6V • Package - 56 pin TSOP • Temperature - 0~70°C • Bit organization


    Original     		PDF MX23L25610 256M-BIT 100ns D15/A-1 FEB/04/2002 NOV/22/2002 APR/03/2003 APR/24/2003 MAY/08/2003 PM0873

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY MX23L25610 256M-BIT 16M x 16 / 32M x 8 MASK ROM WITH PAGE MODE (TSOP ONLY) FEATURES • Current - Operating: 30mA (max.) @ 5MHz - Standby: 15uA (max.) • Supply voltage - 2.7V ~ 3.6V • Package - 56 pin TSOP • Temperature - 0~70°C • Bit organization


    Original     		PDF MX23L25610 256M-BIT 100ns 100ns 50mA-- FEB/04/2002 PM0873

    9809

    Abstract: TSOP 56 Package FPT-56P-M04
    Text: THIN SMALL OUTLINE PACKAGE FUJITSU SEMICONDUCTOR DATA SHEET 56 PIN PLASTIC FPT-56P-M04 56-pin plastic TSOP I Lead pitch 0.40 mm Package width x package length 12.00 × 12.40 mm Lead shape Gullwing Sealing method Plastic mold Mounting height 1.20 mm MAX


    Original     		PDF FPT-56P-M04 56-pin FPT-56P-M04) F56004S-1C-1 9809 TSOP 56 Package FPT-56P-M04

    56-PIN

    Abstract: LH28F008SA LH28F016SU
    Text: LH28F016SU FEATURES • • • • • • • 16M 1M x 16, 2M × 8 Flash Memory 56-PIN TSOP TOP VIEW User-Configurable x8 or x16 Operation 3/5 1 56 WP CE1 2 55 WE 70 ns Maximum Access Time NC 3 54 OE 0.32 MB/sec Write Transfer Rate A20 4 53 RY/BY A19


    Original     		PDF LH28F016SU 56-PIN J63428 SMT96111 LH28F008SA LH28F016SU

    PLCC 68 intel

    Abstract: intel manual 48pin flash programmer circuit
    Text: PROM PROGRAMMERS INTEL FlashPRO-II: Advanced Flash Memory Engineering Programmer • ■ ■ ■ ■ Advanced-capability engineering programmer – Support capability below 5V logic levels – Extremely fast programming performance – 56-lead TSOP socket module


    Original     		PDF 56-lead 44-lead 60-pin 48-pin PLCC 68 intel intel manual 48pin flash programmer circuit

    28F016XS

    Abstract: No abstract text available
    Text: INTEL PRODUCTS INTEL 28F016XS Fast Flash Memory • ■ ■ ■ ■ ■ ■ ■ Synchronous burst interface SmartVoltage technology Nonvolatile, updatable and low power 56-lead TSOP and SSOP packages 2 Mbyte of code storage space 16 symmetrical 128-Kbyte blocks


    Original     		PDF 28F016XS 56-lead 128-Kbyte Intel486TM 28F016XS

    48pin flash programmer circuit

    Abstract: intel manual PLCC 68 intel INTEL 56BALL
    Text: PROM PROGRAMMERS INTEL Intel Flash Memory Programmer • ■ ■ ■ ■ Advanced-capability engineering programmer – Support capability below 5V logic levels – Extremely fast programming performance – 56-lead TSOP socket module supports all lead counts


    Original     		PDF 56-lead 40-ball 48-ball 56-ball 44-lead 56-lead 48pin flash programmer circuit intel manual PLCC 68 intel INTEL 56BALL

    56-PIN

    Abstract: LH28F008SA LH28F016SA
    Text: LH28F016SA FEATURES • • • • • • • 16M 1M x 16, 2M × 8 Flash Memory 56-PIN TSOP TOP VIEW User-Configurable x8 or x16 Operation User-Selectable 3.3 V or 5 V VCC 3/5 1 56 CE1 2 55 WE 70 ns Maximum Access Time NC 3 54 OE 0.43 MB/sec Write Transfer Rate


    Original     		PDF LH28F016SA 56-PIN LH28F008SA J63428 SMT96112 LH28F008SA LH28F016SA

    fw209

    Abstract: No abstract text available
    Text: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3‡, MT28F640J3, MT28F320J3 Q-FLASHTM MEMORY FEATURES 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)


    Original     		PDF 128Mb, x8/x16 128KB 128Mb) 150ns/25ns 120ns/25ns 110ns/25ns fw209

    5525L

    Abstract: CY62256 CY62256L CY62256LL
    Text: 56 CY62256 32Kx8 Static RAM Features output enable OE and three-state drivers. This device has an automatic power-down feature, reducing the power consumption by 99.9% when deselected. The CY62256 is in the standard 450-mil-wide (300-mil body width) SOIC, TSOP, and


    Original     		PDF CY62256 32Kx8 CY62256 450-mil-wide 300-mil 600-mil 5525L CY62256L CY62256LL

    Micron Q-Flash memory

    Abstract: FW501 Micron data sheet Q-Flash sample code read and write flash memory FW201 FW207 MT28F128J3 MT28F128J3FS-15 MT28F320J3 MT28F320J3FS-11
    Text: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3‡, MT28F640J3, MT28F320J3‡ Q-FLASHTM MEMORY FEATURES 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)


    Original     		PDF 128Mb, MT28F128J3, MT28F640J3, MT28F320J3 56-Pin x8/x16 128KB 128Mb) Micron Q-Flash memory FW501 Micron data sheet Q-Flash sample code read and write flash memory FW201 FW207 MT28F128J3 MT28F128J3FS-15 MT28F320J3 MT28F320J3FS-11

    lh28f032sutd-70

    Abstract: 56TSOP LH28F008SA LH28F016SU LH28F032SUTD LH28F800SU
    Text: LH28F032SUTD FEATURES 32M 2M x 16,4M x 8 Flash Memory 56-PIN TSOP • User-Configurable x8 or x16 Operation • User-Selectable 3.3 V or 5 V Vcc • State-of-the Art 0.6 |jm ETOX Flash Technology • 56-Pin, 1.2 mm x 14 mm x 20 mm TSOP (Type I) Package


    OCR Scan     		PDF LH28F032SUTD LH28F016SU 56TSOP TSOPQ56-P-1420) LH28F032SU 56-pin, TSOP056-P-1420) LH28F032SUTD-70 56-pin lh28f032sutd-70 56TSOP LH28F008SA LH28F016SU LH28F032SUTD LH28F800SU

    29057

    Abstract: No abstract text available
    Text: irrte! AEMÄM ! OMiFOKlifflATO ^ 28F016XD 16-MBIT 1 MBIT x 16 DRAM-INTERFACE FLASH MEMORY 85 ns Access Time Orac ) — Supports both Standard and FastPage-Mode Accesses 56-Lead TSOP Type I Package Backwards-Compatible with 28F008SA Command Set Multiplexed Address Bus


    OCR Scan     		PDF 28F016XD 16-MBIT 56-Lead 28F008SA 64-Kbyte 16-Mbit AB-62, AP-357, AP-374, 29057

    Untitled

    Abstract: No abstract text available
    Text: 16M 1M FEATURES x 16, 2M x 8 Flash Memory 56-PIN TSOP TOP VIEW • User-Configurable x8 or x16 Operation -s 3/5 C 1« 56 □ WP CË, Z 2 55 □ WE • 70 ns Maximum Access Time NCZ 3 54 □ ÔË • 0.32 MB/sec Write Transfer Rate A20 z 4 53 □ RY/BY


    OCR Scan     		PDF 56-PIN J63428 T96111

    BA 6688 L

    Abstract: 32ag LH28F016S
    Text: 16M 1M x 1 6 ,2M x 8 Flash Memory FEATURES 56-PIN TSOP TOP VIEW • User-Configurable x8 or x16 Operation •\ 1« 56 □ WP C Ë iC 2 55 □ WE • 70 ns Maximum Access Time NCC 3 54 □ ÔË • 0.32 MB/sec Write Transfer Rate a 2o IZ 4 53 □ RY/BY A-ig IZ


    OCR Scan     		PDF LH28F008SA 56-Pin, 56-PIN J63428 T96111 BA 6688 L 32ag LH28F016S

    Untitled

    Abstract: No abstract text available
    Text: in te i 28F016XD 16-MBIT 1 MBIT X 16 DRAM-INTERFACE FLASH MEMORY 85 ns Access Time (tRAc) — Supports both Standard and FastPage-Mode Accesses 56-Lead TSOP Type I Package Multiplexed Address Bus — RAS# and CAS# Control Inputs 2 ix A Typical Deep Power-Down


    OCR Scan     		PDF 28F016XD 16-MBIT 56-Lead 64-Kbyte 28F008SA

    Untitled

    Abstract: No abstract text available
    Text: in te l ADVANCE INFORMATION 28F016XD 16-MBIT 1 MBIT x 16 DRAM-INTERFACE FLASH MEMORY 85 ns Access Time (tRAC) — Supports both Standard and FastPage-Mode Accesses 56-Lead TSOP Type I Package Multiplexed Address Bus — RAS# and CAS# Control Inputs 2 pA Typical Deep Power-Down Current


    OCR Scan     		PDF 28F016XD 16-MBIT 56-Lead 28F008SA 64-Kbyte

    lh28F160S5

    Abstract: No abstract text available
    Text: S H A R P LH59F3221S5TAA ÔM 2M Preliminary Data Sheet x 32 Flash Memory Module FEATURES • JEDEC Standard Pin Out in an 80-pin Single-in-line Memory Module Package (SIMM) • Built With LH28F160S5, 56-pin TSOP Flash Memory Devices • High Performance CMOS Silicon Gate Process


    OCR Scan     		PDF 80-pin LH28F160S5, 56-pin LH59F3221S5TAA LH59F3221S5TAA 32-bits, LH59F3221S5TAA-90 LH59F3221S5T lh28F160S5