A Listing and Cross Reference of Available Technical Literature from ON Semiconductor
Abstract: MMDF3N06VL MMSF4205 MMSF4P01HDR1 MTP75N06HD MTB3N100E mtd1p50e transistor book transistor SOT23 TO4 36 IGBT Manual
Text: SG385/D Rev. 3, Jul-2000 Low Voltage Surface Mount TMOS Power MOSFET Selector Guide ON Semiconductor Featuring MiniMOS™ SO-8 , EZFET™, Micro8™, SOT-223, TSOP-6, SOT-23, SC-70/SOT-323, DPAK and D2PAK Low Voltage Surface Mount MOSFETs t TMOS Power MOSFETs
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SG385/D
Jul-2000
OT-223,
OT-23,
SC-70/SOT-323,
MTP75N06HD
r14525
A Listing and Cross Reference of Available Technical Literature from ON Semiconductor
MMDF3N06VL
MMSF4205
MMSF4P01HDR1
MTP75N06HD
MTB3N100E
mtd1p50e
transistor book
transistor SOT23 TO4 36
IGBT Manual
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Untitled
Abstract: No abstract text available
Text: MGSF2P02HD Product Preview Power MOSFET 2 Amps, 20 Volts P–Channel TSOP–6 This device represents a series of Power MOSFETs which are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low
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MGSF2P02HD
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free transistor equivalent book 2sc
Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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X10679EJHV0SG00
free transistor equivalent book 2sc
uPA1556AH
The Japanese Transistor Manual 1981
samsung UHF/VHF TV Tuner
MOSFET cross-reference 2sk
PD431000A-X
upper arm digital sphygmomanometer circuit diagram
PD72001
uPC1237
uPC 2002
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bit 3501 Architecture
Abstract: HY29DS162 HY29DS163 D6547
Text: HY29DS162/HY29DS163 16 Megabit 2M x 8/1M x16 Super-Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 1.8 to 2.2 V (2.0V ± 10%) − Ideal for battery-powered applications
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HY29DS162/HY29DS163
bit 3501 Architecture
HY29DS162
HY29DS163
D6547
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Hyundai central locking
Abstract: bit 3501 Architecture HY29DL162 HY29DL163
Text: HY29DL162/HY29DL163 16 Megabit 2M x 8/1M x16 Low Voltage, Dual Bank, Simultaneous Read/Write, Flash Memory KEY FEATURES n Single Power Supply Operation n n n n n n n n n n n − Read, program, and erase operations from 2.7 to 3.6 V − Ideal for battery-powered applications
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HY29DL162/HY29DL163
100pF
Hyundai central locking
bit 3501 Architecture
HY29DL162
HY29DL163
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NEC A39A
Abstract: NEC A39A 240 SOP28 330 mil land pattern NEC A39A 8 PIN mjh 106 120-PIN 282 185 01 smd TRANSISTOR code b6 ED-7500 transistor a39a SIP 400B
Text: IC PACKAGE MANUAL 1991, 1992, 1994, 1996 Document No. C10943XJ6V0IF00 Previous No. IEI-635, IEI-1213 Date Published January 1996 P Printed in Japan CHAPTER 1 PACKAGE OUTLINES AND EXPLANATION CHAPTER 2 CHAPTER 3 1 THROUGH HOLE PACKAGES 2 SURFACE MOUNT PACKAGES
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C10943XJ6V0IF00
IEI-635,
IEI-1213)
ED-7411
NEC A39A
NEC A39A 240
SOP28 330 mil land pattern
NEC A39A 8 PIN
mjh 106
120-PIN 282 185 01
smd TRANSISTOR code b6
ED-7500
transistor a39a
SIP 400B
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LH5168D-10L
Abstract: tsop 338 IR LH5168 LH5168H
Text: SHARP CORP h lE LH5168 FEATURES • 8,192 • Access times: 80/100 ns MAX. • Low-power consumption: Operating: 303 mW (MAX.) LH5168/D/N @ 80 ns 248 mW (MAX.) LH5168/D/N/T/TR @ 100 ns 275 mW (MAX.) LH5168H/HD/HN @ 100 ns Standby: 5.5 jiW (MAX.) LH5168/D/N/T/TR
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LH5168
LH5168/D/N
LH5168/D/N/T/TR
LH5168H/HD/HN
LH5168/D/N/T/TR
LH5168:
-10to
LH5168H:
28-pin,
LH5168D-10L
tsop 338 IR
LH5168
LH5168H
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tsop 338 IR
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V17800 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V17800 is a 2,097,152-w ord x 8-bit dynam ic RA M fabricated in OKI's CM O S silicon gate technology. The M SM 51V17800 achieves high integration, high-speed operation, and low-power
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MSM51
V17800
152-Word
51V17800
152-w
28-pin
tsop 338 IR
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hm628128blfp-7
Abstract: tsop 338 IR FP-32D package HM628128BLP-7
Text: HM628128B Series 131,072-word x 8-bit High speed CMOS Static RAM HITACHI ADE-203-243B Z Rev. 2.0 Mar. 20, 1995 Description The Hitachi HM628128B is a CMOS static RAM organized 131,072-word x 8-bit. It realizes higher density, higher performance and low power consumption by employing 0.8 (j.m Hi-CMOS shrink process technology.
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HM628128B
072-word
ADE-203-243B
70/85ns
hm628128blfp-7
tsop 338 IR
FP-32D package
HM628128BLP-7
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY KM6161002A CMOS SRAM 64 K x 16 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,17,20 ns Max. • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM6161002A-12 : 220 mA(Max.)
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KM6161002A
KM6161002A-12
KM6161002A-15
KM6161002A-17
161002A
KM6161002AJ
44-SOJ-400
KM6161002AT
44-TSOP2-400F
KM6161002A
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M5M27C102J15
Abstract: No abstract text available
Text: MITSUBIHI LSIs M 5 M 2 7 C 1 0 2 P ,F P ,J ,V P ,R V -1 5 1048576-BIT 65536-WORD BY 16-BIT CMOS ONE TIME PROGRAMMABLE ROM DESCRIPTION The M itsubishi M 5M 27C 102P , FP, J , VP, R V - 15 are h ig h speed 1 0 4 8 5 7 6 - b it one time programmable read only
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1048576-BIT
65536-WORD
16-BIT)
M5M27C102P
RV-15
M5M27C102J15
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Untitled
Abstract: No abstract text available
Text: Preliminary information •■ I l A S4C4M 4E0 AS4C4M4E1 A 4 M x 4 C M O S DRAM EDO family Features • Organization: 4,194,304 words x 4 bits • High speed • TTL-compatible, three-state I/O • JEDEC standard package - 5 0 / 6 0 ns access tim e - 2 5 / 3 0 ns colum n address access time
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24/26-pin
AS4C4M4E0-50TC
AS4C4M4E0-50TI
AS4C4M4E0-60TC
AS4C4M4E0-60TI
AS4C4M4E1-50JC
AS4C4M4E1-50JI
AS4C4M4E1-60JC
AS4C4M4E1-60JI
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1010-SG
Abstract: ic p26 pin 20 transformer 20 pin MSM7541 MSM7541GS MSM7541GS-VK MSM7541RS MSM7542 MSM7542GS MSM7542RS
Text: O K I Semiconductor MSM7541 / MSM7542 3V Sin g le-R ail PCM C O D E C s D ESCRIPTIO N The MSM7541 and MSM7542 are single-rail, low-voltage, single-channel PCM CODECs which perform voice digitization using presampling and reconstruction filters for transmit and receive operations in
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MSM7541
MSM7542
MSM7542
MSM7541
P4E40
1010-SG
ic p26 pin 20
transformer 20 pin
MSM7541GS
MSM7541GS-VK
MSM7541RS
MSM7542GS
MSM7542RS
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Untitled
Abstract: No abstract text available
Text: NN514100A series Fast Page Mode CMOS 4M x 1bit Dynamic RAM NPN a DESCRIPTION The NN514100A series is a high performance CMOS Dynamic Random Access Memory organized as 4,194,304 words by 1 bit. The NN514100A series is fabricated with advanced CMOS technology and designed with innovative design tech
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NN514100A
NN514100AL
NN5141
128ms
NN514100A
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MSM51V17800
Abstract: No abstract text available
Text: O K I Semiconductor MSM51 V17800 _ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17800 is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17800 achieves high integration, high-speed operation, and low-power
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MSM51V17800
152-Word
MSM51V17800
28-pin
cycles/32
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT juPD42S16405L, 4216405L 3.3 V OPERATION 16 M-BIT DYNAMIC RAM 4 M-WORD BY 4-BIT, HYPER PAGE MODE DESCRIPTION The mPD42S16405L, 4216405L are 4 194 304 words by 4 bits dynamic CMOS RAMs with optional hyper page mode. Hyper page mode is a kind of page mode and is useful for the read operation.
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uPD42S16405L
uPD4216405L
mPD42S16405L,
4216405L
PD42S16405L,
26-pin
/jPD42S
16405L-A60,
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tsop 338 IR
Abstract: L7BL 8AGD km49c512bj
Text: KM49C512B/BL/BLL CMOS DRAM 5 1 2 K x 9 Bit CM OS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tR A C tCA C tR C 60ns 15ns 110ns K M 49C 5 1 2 B /B L /B L L -7 70ns 20ns 130ns KM 49C 512B /B L7B LL-8 ' 80ns 20ns 150ns
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KM49C512B/BL/BLL
28-LEAD
tsop 338 IR
L7BL
8AGD
km49c512bj
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A17a
Abstract: HY628400LLG55 HY628400LLG 6da6 HY628400LG A18A HY628400 tsop 338 IR 1A13 DA16
Text: HY628400 Series •HYUNDAI 512K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400 is a high-speed, low power and 524,288x8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit
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HY628400
512KX
288x8-bits
speed-55/70/85/100ns
1DE01
-11-MAY95
A17a
HY628400LLG55
HY628400LLG
6da6
HY628400LG
A18A
tsop 338 IR
1A13
DA16
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Untitled
Abstract: No abstract text available
Text: DRAM MODULES KMM5362000A1 /A1G 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KMM5362000A1 is a 2M b its X 3 6 Dynamic RAM high density memory module. The Samsung KMM5362000A1 consist of sixteen CMOS 1 M X 4 bit DRAMs in 20 -pin SOJ package and eight CMOS 1M X 1
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KMM5362000A1
5362000A1
20-pin
72-pin
KMM5362000A1/A1G
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5 M 5 1 T 0 8 A F P , V P , R p ftC IJ M I N A R Y No«e Th- V - 1 2 V S L . - 1 5 V S L 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM ; u S « ,“« ct'“n9e' DESCRIPTION The M 5M 51T08AFP,VP,RV are a 1048576-bit C M O S static RAM
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1048576-BIT
131072-WORD
51T08AFP
120ns
M5M51T08AFP0
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A11t
Abstract: LTC 5650
Text: HY51V16100B Series - HYUNDAI 16M X 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100B is the new generation and fast dynamic RAM organized 16,777,216 x 4-bit. The HY51V16100B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques
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HY51V16100B
12T/BSC
1AD43-00-MAY95
HY51V16100BJ
HY51V16100BSLJ
HY51V16100BT
A11t
LTC 5650
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KM44C1000
Abstract: km44c1000bj KM44C1000BJ6 KM44C1000BP-7
Text: SAMSUNG ELECTRONICS INC L7E i 7^4142 DDISbHT B47 « S P I Ù K CMOS DRAM KM44C1000B 1 M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1000B is a high speed CMOS 1,048,516 x 4 Dynamic Random Access Memory. Its de
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KM44C1000B
KM44C1000B
110ns
KM44C1000B-7
130ns
KM44C1000B-8
150ns
KM44C1000B-6
20-LEAD
KM44C1000
km44c1000bj
KM44C1000BJ6
KM44C1000BP-7
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Untitled
Abstract: No abstract text available
Text: D A TA SHEET NECE MOS INTEGRATED CIRCUIT /¿PD42S4260, 424260 4 M BIT DYNAMIC RAM 256 K-WORD BY 16-BIT, FAST PAGE MODE, BYTE READ/WRITE MODE DESCRIPTION The /¿PD42S4260, 424260 are 262 144 words by 16 bits dynamic CMOS RAMs w ith optional fast page mode and byte read/write mode.
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PD42S4260,
16-BIT,
/1PD42S4260.
iPD42S4260
PD424260
44-pin
40-pin
VP15-207-2
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L7251
Abstract: L7251 3.1
Text: MOTOROLA SC HEflOR Y / A S I C SfiE » b3fc.72Sl G D 6 7 1 6 2 TTb m » 0 J 3 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM54100A MCM5L4100A Advance Information 4M x 1 CMOS Dynamic RAM Fast Page Mode The MCM54100A is a 0.7n CMOS high-speed dynamic random access memory. It is
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MCM54100A
MCM5L4100A
MCM54100A
MCM54100AN60
MCM54100AN70
MCM54100AN80
MCM54100AN60R2
MCM54100AN70R2
MCM54100AN80R2
L7251
L7251 3.1
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