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    TSM8 Search Results

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    TSM8 Price and Stock

    Taiwan Semiconductor TSM8568CS-RLG

    MOSFET N/P-CH 30V 15A 8SOP
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    DigiKey TSM8568CS-RLG Cut Tape 21,186 1
    • 1 $1.02
    • 10 $0.682
    • 100 $1.02
    • 1000 $0.34604
    • 10000 $0.34604
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    TSM8568CS-RLG Digi-Reel 21,186 1
    • 1 $1.02
    • 10 $0.682
    • 100 $1.02
    • 1000 $0.34604
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    TSM8568CS-RLG Reel 17,500 2,500
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    • 10000 $0.28725
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    Taiwan Semiconductor TSM8588CV-RGG

    -60V, -4.5A, COMPLEMENTARY P-CHA
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    DigiKey TSM8588CV-RGG Cut Tape 9,130 1
    • 1 $0.68
    • 10 $0.454
    • 100 $0.68
    • 1000 $0.22302
    • 10000 $0.20458
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    TSM8588CV-RGG Digi-Reel 9,130 1
    • 1 $0.68
    • 10 $0.454
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    • 1000 $0.22302
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    TSM8588CV-RGG Reel 5,000 5,000
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    Bourns Inc HCTSM80101AAL-E

    XFMR 3.3-5V/3.3-15V,350MA PK TR
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    DigiKey HCTSM80101AAL-E Cut Tape 2,158 1
    • 1 $5.36
    • 10 $4.094
    • 100 $3.3632
    • 1000 $3.16816
    • 10000 $3.16816
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    HCTSM80101AAL-E Digi-Reel 2,158 1
    • 1 $5.36
    • 10 $4.094
    • 100 $3.3632
    • 1000 $3.16816
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    HCTSM80101AAL-E Reel 2,000 500
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    • 10000 $2.7679
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    Avnet Americas HCTSM80101AAL-E Reel 14 Weeks 2,500
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    • 10000 $2.72
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    Mouser Electronics HCTSM80101AAL-E 134
    • 1 $5.36
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    • 1000 $2.81
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    Newark HCTSM80101AAL-E Reel 2,500
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    HCTSM80101AAL-E Cut Tape 2,500
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    • 1000 $3.14
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    Avnet Abacus HCTSM80101AAL-E Reel 17 Weeks 2,500
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    Master Electronics HCTSM80101AAL-E 2,500
    • 1 -
    • 10 $7.53
    • 100 $7.42
    • 1000 $7.2
    • 10000 $2.56
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    Neutron USA HCTSM80101AAL-E 50
    • 1 $33.73
    • 10 $33.73
    • 100 $33.73
    • 1000 $33.73
    • 10000 $33.73
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    Bourns Inc HCTSM80102AAL-E

    XFMR 3.3-5V/3.3-15V,350MA PK TR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HCTSM80102AAL-E Cut Tape 1,249 1
    • 1 $5.31
    • 10 $4.053
    • 100 $3.3299
    • 1000 $3.1368
    • 10000 $3.1368
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    HCTSM80102AAL-E Digi-Reel 1,249 1
    • 1 $5.31
    • 10 $4.053
    • 100 $3.3299
    • 1000 $3.1368
    • 10000 $3.1368
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    HCTSM80102AAL-E Reel 500 500
    • 1 -
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    • 1000 $2.91506
    • 10000 $2.76958
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    Avnet Americas HCTSM80102AAL-E Reel 14 Weeks 2,500
    • 1 -
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    • 1000 -
    • 10000 $2.72
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    Mouser Electronics HCTSM80102AAL-E 2,914
    • 1 $5.01
    • 10 $3.84
    • 100 $3.2
    • 1000 $2.41
    • 10000 $2.41
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    Newark HCTSM80102AAL-E Reel 2,500
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    • 10000 $2.72
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    Avnet Abacus HCTSM80102AAL-E Reel 17 Weeks 2,500
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    Master Electronics HCTSM80102AAL-E 1,000
    • 1 -
    • 10 $7.53
    • 100 $7.42
    • 1000 $7.2
    • 10000 $2.56
    Buy Now

    Bourns Inc HCTSM81017CAL-E1

    XFRMR POWER 10:17 350UH SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HCTSM81017CAL-E1 Cut Tape 493 1
    • 1 $5.05
    • 10 $3.838
    • 100 $3.232
    • 1000 $3.131
    • 10000 $3.131
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    Bristol Electronics HCTSM81017CAL-E1 1,446
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    Avnet Abacus HCTSM81017CAL-E1 Reel 143 Weeks 500
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    TSM8 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TSM80N08CZ C0G Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 75V 80A TO220 Original PDF
    TSM80N1R2CH C5G Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 5.5A TO251 Original PDF
    TSM80N1R2CI C0G Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 5.5A ITO220 Original PDF
    TSM80N1R2CL C0G Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 5.5A TO262S Original PDF
    TSM80N1R2CP ROG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 5.5A TO252 Original PDF
    TSM80N400CF C0G Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 12A ITO220S Original PDF
    TSM80N950CH C5G Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 800V 6A TO251 Original PDF
    TSM80N950CI C0G Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 800V 6A ITO220 Original PDF
    TSM80N950CP ROG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 800V 6A TO252 Original PDF
    TSM836AW1B Sanyo Semiconductor Electromechanical Filter 836.5 MHz BPF, 2 dB (Min) IL Original PDF
    TSM836AW2B Sanyo Semiconductor Electromechanical Filter 836.5 MHz BPF, 2 dB (Min) IL Original PDF
    TSM836EW-C Sanyo Semiconductor Electromechanical Filter 836.5 MHz BPF, 3.4 dB (Min) IL Original PDF
    TSM8405P Taiwan Semiconductor MOSFET, Enhancement, P Channel, 12V, 4-Pin Original PDF
    TSM850N06CX RFG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 60V 3A SOT23 Original PDF
    TSM8568CS RLG Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET N/P-CH 30V 15A/13A 8SOP Original PDF
    TSM8588CS RLG Taiwan Semiconductor Manufacturing Company COMPLEMENTARY N & P-CHANNEL POWE Original PDF
    TSM85N10CZ C0G Taiwan Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHANNEL 100V 81A TO220 Original PDF
    TSM881AW1B Sanyo Semiconductor Electromechanical Filter 881.5 MHz BPF, 2 dB (Min) IL Original PDF
    TSM881EW1C Sanyo Semiconductor Electromechanical Filter 881.5 MHz BPF, 3 dB (Min) IL Original PDF
    TSM897AW1B Sanyo Semiconductor Electromechanical Filter 897.5 MHz BPF, 2.3 dB (Min) IL Original PDF

    TSM8 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    N-Channel

    Abstract: MOSFET 700V 10A 700v 4A mosfet 700v 10A mosfet
    Text: TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω)(max) ID (A) 700 0.9 @ VGS =10V 8 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original
    PDF TSM8N70 ITO-220 TSM8N70 TSM8N70CI 50pcs N-Channel MOSFET 700V 10A 700v 4A mosfet 700v 10A mosfet

    TSM897EW-C

    Abstract: 935 MHz BAND PASS FILTER
    Text: SAW Filter for EGSM Tx MODEL TSM897EW-C 1. ELECTRICAL CHARACTERISTICS : Ta = -20 to +70 °C ITEM Nominal I/O Impedance Nominal Center Freq. : f0 Pass Band Insertion Loss Ripple at Pass Band V.S.W.R. at Pass Band Attenuations 0.1 to 600 600 to 700 700 to 813


    Original
    PDF TSM897EW-C 25max. TSM897EW-C 935 MHz BAND PASS FILTER

    TSM4405P

    Abstract: TSM8405P Ultra Low Qg
    Text: TSM8405P Single P-Channel 1.8V Specified MicroSURFTM MOSFET D D S Lateral Power for Load Switching and PA Switch S S G D G VDS = - 12V RDS on , Vgs @ - 4.5V, Ids @ - 4.9A = 50mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 4.4A = 70mΩ RDS (on), Vgs @ - 1.8V, Ids @ - 4.0A = 90mΩ


    Original
    PDF TSM8405P TSM8405P TSM4405P TSM4405P Ultra Low Qg

    800V 40A mosfet

    Abstract: No abstract text available
    Text: TSM8N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) 800 ID (A) 1.4 @ VGS =10V 8 General Description The TSM8N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original
    PDF TSM8N80 O-220 ITO-220 TSM8N80 800V 40A mosfet

    Untitled

    Abstract: No abstract text available
    Text: TSM8405P Single P-Channel 1.8V Specified MicroSURFTM MOSFET D D S Lateral Power for Load Switching and PA Switch S S G D G VDS = - 12V RDS on , Vgs @ - 4.5V, Ids @ - 4.9A = 50mΩ RDS (on), Vgs @ - 2.5V, Ids @ - 4.4A = 70mΩ RDS (on), Vgs @ - 1.8V, Ids @ - 4.0A = 90mΩ


    Original
    PDF TSM8405P TSM8405P

    Untitled

    Abstract: No abstract text available
    Text: TSM85N10 100V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features VDS V RDS(on)(mΩ) ID (A) 100 10 @ VGS =10V 81 Block Diagram ● Advanced Trench Technology ● Low RDS(ON) 10mΩ (Max.) ● Low gate charge typical @ 154nC (Typ.)


    Original
    PDF TSM85N10 O-220 154nC 170pF TSM85N10CZ 50pcs

    DIODE B12

    Abstract: B12 DIODE marking B12 diode N-channel 500V mosfet B12 68 diode MARKING CODE mosfet high power diode 500v TSM8N50 DIODE B12 48 n-channel 250V power mosfet dpak
    Text: TSM8N50 500V N-Channel MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 0.85 @ VGS =10V 7.2 Features Block Diagram ● Low On-Resistance. ● High power and current handing capability.


    Original
    PDF TSM8N50 O-251 O-252 TSM8N50CH 75pcs TSM8N50CP O-252 DIODE B12 B12 DIODE marking B12 diode N-channel 500V mosfet B12 68 diode MARKING CODE mosfet high power diode 500v TSM8N50 DIODE B12 48 n-channel 250V power mosfet dpak

    Untitled

    Abstract: No abstract text available
    Text: TSM802 20V N-Channel MOSFET w/ESD Protected TDFN 3x3 PRODUCT SUMMARY Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain VDS V 20 Features  RDS(on)(m) ID (A) 25 @ VGS = 4.5V 5 30 @ VGS = 2.5V 4 65 @ VGS = 1.8V 2 Block Diagram Advance Trench Process Technology


    Original
    PDF TSM802 TSM802CQ

    800V 40A mosfet

    Abstract: diode 800v
    Text: TSM8N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) 800 ID (A) 1.4 @ VGS =10V 8 General Description The TSM8N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original
    PDF TSM8N80 O-220 ITO-220 TSM8N80 800V 40A mosfet diode 800v

    Untitled

    Abstract: No abstract text available
    Text: TSM85N08 75V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features VDS V RDS(on)(mΩ) ID (A) 75 8 @ VGS =10V 80 Block Diagram ● Advanced Trench Technology ● Low RDS(ON) 8mΩ (Max.) ● Low gate charge typical @ 91.5nC (Typ.)


    Original
    PDF TSM85N08 O-220 203pF TSM80N08CZ 50pcs

    diode b10

    Abstract: MOSFET 700V 10A TSM8N70 700v 4A mosfet 700v 10A mosfet MOSFET 700V 4A
    Text: TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 700 0.9 @ VGS =10V 4.6 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original
    PDF TSM8N70 ITO-220 TSM8N70 TSM8N70CI 50pcs diode b10 MOSFET 700V 10A 700v 4A mosfet 700v 10A mosfet MOSFET 700V 4A

    mosfet 4800

    Abstract: esd protect mosfet p channel mosfet 10a 20v 12v 10A mosfet 4800 mosfet FULLY PROTECTED MOSFET n-channel mosfet transistor P channel MOSFET 10A 4800 power mosfet
    Text: TSM802 20V N-Channel MOSFET w/ESD Protected TDFN 3x3 PRODUCT SUMMARY Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain VDS V 20 Features ● RDS(on)(mΩ) ID (A) 25 @ VGS = 4.5V 5 30 @ VGS = 2.5V 4 65 @ VGS = 1.8V 2 Block Diagram Advance Trench Process Technology


    Original
    PDF TSM802 TSM802CQ mosfet 4800 esd protect mosfet p channel mosfet 10a 20v 12v 10A mosfet 4800 mosfet FULLY PROTECTED MOSFET n-channel mosfet transistor P channel MOSFET 10A 4800 power mosfet

    TSM836EW-C

    Abstract: No abstract text available
    Text: SAW Filter for AMPS/CDMA/TDMA Tx MODEL TSM836EW-C ES-2 1. ELECTRICAL CHARACTERISTICS : Ta = -30 to +85 °C ITEM Nominal I/O Impedance Nominal Center Freq. : f0 Pass Band Insertion Loss Ripple at Pass Band V.S.W.R. at Pass Band Attenuation DC to 800 869 to 894


    Original
    PDF TSM836EW-C 25max. TSM836EW-C

    MOSFET 700V 10A

    Abstract: MOSFET 700V TO 220 TSM8N70CI MOSFET 700V 4A ITO-220 700v 4A mosfet 700v 10A mosfet
    Text: TSM8N70 700V N-Channel Power MOSFET ITO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS V RDS(on)(Ω) ID (A) 700 0.85 @ VGS =10V 4.6 General Description The TSM8N70 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.


    Original
    PDF TSM8N70 ITO-220 TSM8N70 50pcs TSM8N70erty MOSFET 700V 10A MOSFET 700V TO 220 TSM8N70CI MOSFET 700V 4A ITO-220 700v 4A mosfet 700v 10A mosfet

    Untitled

    Abstract: No abstract text available
    Text: TSM80N08 75V N-Channel Power MOSFET TO-220 PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source Features VDS V RDS(on)(mΩ) ID (A) 75 8 @ VGS =10V 80 Block Diagram ● Advanced Trench Technology ● Low RDS(ON) 8mΩ (Max.) ● Low gate charge typical @ 91.5nC (Typ.)


    Original
    PDF TSM80N08 O-220 203pF 50pcs TSM80N08CZ 25rty

    N-channel 500V mosfet

    Abstract: A12 diode
    Text: TSM8N50 500V N-Channel MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 0.85 @ VGS =10V 7.2 Features Block Diagram ● Low On-Resistance. ● High power and current handing capability.


    Original
    PDF TSM8N50 O-251 O-252 TSM8N50CH 75pcs TSM8N50CP O-252 N-channel 500V mosfet A12 diode

    Flyback Transformers SANYO

    Abstract: tsm947 k 942 TSM942EW TSM902EW-B TSM942AW4B tsj947 Transformers SANYO TSM897AW1B TSM897EW-C
    Text: SANYO Downloads Specifications Features 1. Small size. 2. SMD package. 3. High reliability. SAW Filter for Communication RF Filter 800MHz Pass Insertion Center Band Loss IL Attenuation Applications Model Number Frequency (dB Min.) PB (dB (MHz) (MHz) Min.)


    Original
    PDF 800MHz) TSM902EW-B TSJ947AW1B TSM947EW2C TSM897AW1B TSM897EW-C TSM942AW4B TSM942AW9B TSM942EW-C TSM942FW-K Flyback Transformers SANYO tsm947 k 942 TSM942EW TSM902EW-B tsj947 Transformers SANYO TSM897EW-C

    SM8206

    Abstract: SM8205
    Text: • MICROCOMPUTERS ★ Under deveiopm ent 8-bit Single-chip Microcomputers • Memory bit Model No. ; ROM I RAM ! j Port 1 j j tetructai Supply [ . « Instruction cycle ■ [Interrupt set ; (/u s) I/O j current Standby; (mA) function! ose TYP. .M IN.


    OCR Scan
    PDF SM8203 SM8205 SM8206 SM8311 SM8313 SM8314 LR3795X LR3796X LR3793X LR3797X

    jh d83

    Abstract: 1G05 DO-214M bj1022
    Text: mm tm m Scottsdale, AZ m Microsemi Progress Pawer&ct by Technology 8700 E. Thomas Road Scottsdale, A Z 85252 602 941-6300 TSM B J1Ö 05C thru TSM BJ1027C Features • • • • • • • • • • Bidirectional Transient Voltage Protection Surge Capabilities up to 100 Am ps @ 10/1000ms or 300 Am ps @ 8/20^6 (note 2, 5)


    OCR Scan
    PDF BJ1027C 10/1000ms UL94VO UL497B SS09001 -214AA 21SAA 0-03CT DO-13 jh d83 1G05 DO-214M bj1022

    Untitled

    Abstract: No abstract text available
    Text: mm mmm S co ttsd a le , A Z M ic m m s e m Pfogm ss Powered by T&chnoiogy i 8700 E. Thomas Road Scottsdale, AZ 85252 602 941-6300 TSM BJ0505C th ru TSM BJ0527C Features • • • • • • • • • • Bidirectional Transient Voltage Protection Surge Capabilities up to 50 Amps


    OCR Scan
    PDF BJ0505C BJ0527C DO-214AA) DO-215AA) DD-214AA DO-215AA DO-13

    A91V

    Abstract: A16V N5722 A0642 aafj
    Text: - KNo N * 5 7 2 2 N O . $ 5722 33197 CMOS LSI LE28F4001 AM, ATS, ARS-15 — ' 4M 5 2 4 2 8 8 7 - Mx S t y K ; 7 5 "J mm LE28F4001AM, ATS, A R S ii, 524288 V - V x 8 £ y h Jg rii 0 i t > jK - K » ffi U . I V # - « iM iift jjfjf* 7 •y y -> * J * :') V b S>. MJ )2CMOS@S!8 CD\%m 1C i U . M i«, fflfà


    OCR Scan
    PDF LE28F4001AM, ARS-15 5242B87- 150ns 20fiAimai) OP32tJV LE28F4001AM TSOP32ti LE28F4001ATS A91V A16V N5722 A0642 aafj

    TME 87

    Abstract: tme 126 TSM30 TA40B TSM250 TSM12 tsm1000 TSM160 230 94 C TSM100
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 CeTeBbie TpaHC$opMaTopbi cepuu TSM A n a M O H T a^a Ha n a H e n b C e p w a c e T e B u x T p a H c ^ o p M a T o p o B Ha IH -0 6 p a 3 H 0 M ce p fle H H M K e . M o H T M p y w r c fl Ha


    OCR Scan
    PDF Lll-06pa3H0M 060pyfl0BaHMH 6e30nacH0CTM 3neKTp03HepreTMKM. TSM30 TSM50 TSM60 TSM80 TSM100 TSM120 TME 87 tme 126 TA40B TSM250 TSM12 tsm1000 TSM160 230 94 C