Untitled
Abstract: No abstract text available
Text: TSM3455 30V P-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source -30 Features ID (A) 100 @ VGS = -10V -3.5 170 @ VGS = -4.5V -2.7 Block Diagram ● Advance Trench Process Technology
|
Original
|
PDF
|
TSM3455
OT-26
TSM3455CX6
|
Untitled
Abstract: No abstract text available
Text: TAIWAN SEMICONDUCTOR s TSM3455 30V P-Channel MOSFET bl RoHS CO M PLIANCE SO T-26 654 PRODUCT SUM M ARY Pin Definition; 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V DS V R Ds(on)(mQ) b (A) 100 @ Vcs = -10V -3.5 170 @ VGS= -4.5V -2.7 -30 1 23 Features
|
OCR Scan
|
PDF
|
TSM3455
3455C
|
tsm3455
Abstract: No abstract text available
Text: s TAIW AN TSM3455 SEMICONDUCTOR 30V P-Channel MOSFET b RoHS CO M PLIANCE SO T-26 654 PRODUCT SUM M ARY Pin Definition; 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V DS V) R Ds(on)(mQ) b (A) 100 @ Vcs = -10V -3.5 1 70 @ VGS = -4.5V -2.7 -30 1 23
|
OCR Scan
|
PDF
|
TSM3455
3455C
tsm3455
|
marking 2U diode
Abstract: TSM3455CX6 marking 2U 20 diode IR P-Channel mosfet TSM345 diode marking code 2U M3455 P-channel power mosfet 30V tsm3455
Text: E TAIW AN pb RoHS TSM3455 S E M IC O N D U C T O R 30V P-Channei MOSFET CO M PLIANCE PRODUCT SUM M ARY Pin Definition; 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V DS (V) R Ds(on)(mQ) b (A) 100 @ Vcs = -10V -3.5 1 70 @ VGS = -4.5V -2.7 -30 1 23
|
OCR Scan
|
PDF
|
M3455
OT-26
TSM3455CX6
OT-26
marking 2U diode
marking 2U 20 diode
IR P-Channel mosfet
TSM345
diode marking code 2U
M3455
P-channel power mosfet 30V
tsm3455
|