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    TSM3424 Price and Stock

    TSC Electronics Ltd TSM3424CX6 RF

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    Bristol Electronics TSM3424CX6 RF 5,969
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    TSC Electronics Ltd TSM3424CX6RF

    30 V N-CHANNEL MOSFET Power Field-Effect Transistor, 6.7A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA TSM3424CX6RF 9,000
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    TSM3424 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TSM3424 Taiwan Semiconductor 30V N-Channel MOSFET Original PDF
    TSM3424CX6RF Taiwan Semiconductor 30V N-Channel MOSFET Original PDF

    TSM3424 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TSM3424 30V N-Channel MOSFET SOT-26 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 30 Features ID (A) 30 @ VGS = 10V 6.7 42 @ VGS = 4.5V 5.7 Block Diagram ● Advance Trench Process Technology ●


    Original     		PDF TSM3424 OT-26 TSM3424CX6

    marking code 67a sot23 6

    Abstract: mosfet 452 TSM3424 MARKING SO SOT26
    Text: TSM3424 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source 30 Features ID (A) 30 @ VGS = 10V 6.7 42 @ VGS = 4.5V 5.7 Block Diagram ● Advance Trench Process Technology ●


    Original     		PDF TSM3424 OT-23 TSM3424CX6 OT-26 marking code 67a sot23 6 mosfet 452 TSM3424 MARKING SO SOT26

    MARKING SO SOT26

    Abstract: No abstract text available
    Text: TSM3424 30V N-Channel MOSFET SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY VDS V RDS(on)(mΩ) 30 Features ID (A) 30 @ VGS = 10V 6.7 42 @ VGS = 4.5V 5.7 Block Diagram ● Advance Trench Process Technology ●


    Original     		PDF TSM3424 OT-26 TSM3424CX6 OT-26 MARKING SO SOT26

    Untitled

    Abstract: No abstract text available
    Text: TAIW AN s TSM3424 SEMICONDUCTOR 30V N-Channei MOSFET bl RoHS CO M PLIANCE SO T-26 654 PRODUCTS ÜMMARY P in D e fin itio n : VDS{V 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source RDS on){lTlÛ) Id (A) 30 @ VGS= 10V 6.7 42 @ V gs = 4.5V 5.7 30 1 23 Features


    OCR Scan     		PDF TSM3424 3424C

    MOSFET MARKING 3g

    Abstract: 67A SOT 23 6 3G MOSFET M3424
    Text: E TAIWAN TSM3424 S E M IC O N D U C T O R 30V N-Channei MOSFET pb RoHS CO M PLIANCE SO T-26 854 PR O D U C TS ÜMMARY P in D e fin itio n : 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source V D S{V ) 30 1 23 Features R D S (o n ){ lT lÛ ) Id ( A ) 30 @ VGS= 10V


    OCR Scan     		PDF M3424 OT-26 TSM3424CX6 OT-26 MOSFET MARKING 3g 67A SOT 23 6 3G MOSFET M3424